PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3. Applications • • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ VGS = -4.5 V; ID = -400 mA; Tj = 25 °C - 670 850 mΩ Tj = 25 °C - - 20 V -8 - 8 V - - 725 mA - - -20 V TR1 (N-channel), Static characteristics RDSon drain-source on-state resistance TR2 (P-channel), Static characteristics RDSon drain-source on-state resistance TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] TR2 (P-channel) VDS drain-source voltage Tj = 25 °C Scan or click this QR code to view the latest information for this product PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter VGS gate-source voltage ID drain current [1] Conditions VGS = -4.5 V; Tamb = 25 °C [1] Min Typ Max Unit -8 - 8 V - - -500 mA 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D2 D1 4 G1 1 2 G2 3 TSSOP6 (SOT363) S1 S2 017aaa262 6. Ordering information Table 3. Ordering information Type number Package PMGD290UCEA Name Description Version TSSOP6 plastic surface-mounted package; 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code [1] PMGD290UCEA YD% [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - 20 V -8 8 V TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions ID drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Min Max Unit [1] - 725 mA [1] - 450 mA - 3 A [2] - 280 mW [1] - 320 mW - 990 mW Tsp = 25 °C TR1 (N-channel), Source-drain diode IS source current Tamb = 25 °C [1] - 370 mA HBM [3] - 2000 V - -20 V -8 8 V TR1 N-channel), ESD maximum rating VESD electrostatic discharge voltage TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID drain current Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C [1] - -500 mA VGS = -4.5 V; Tamb = 100 °C [1] - -320 mA - -2 A [2] - 280 mW [1] - 320 mW - 990 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C TR2 (P-channel), Source-drain diode IS source current Tamb = 25 °C [1] - -370 mA electrostatic discharge voltage HBM [3] - 2000 V Ptot total power dissipation Tamb = 25 °C [2] - 445 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C TR2 (P-channel), ESD maximum rating VESD Per device [1] [2] [3] PMGD290UCEA Product data sheet 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. Measured between all pins. All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-007202 10 Limit RDSon = VDS/ID ID (A) 1 tp = 1 ms 10-1 10-2 10-1 DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 tp = 100 ms 1 10 VDS (V) 102 IDM = single pulse Fig. 3. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET aaa-007203 -10 Limit RDSon = VDS/ID ID (A) -1 tp = 1 ms -10-1 -10-2 -10-1 DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 tp = 100 ms -1 -10 -102 VDS (V) IDM = single pulse Fig. 4. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - 390 445 K/W [2] - 340 390 K/W - - 130 K/W [1] - 390 445 K/W [2] - 340 390 K/W - - 130 K/W - - 300 K/W TR1 (N-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point TR2 (P-channel) Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) thermal resistance from junction to ambient [1] [2] PMGD290UCEA Product data sheet in free air [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 102 10 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 102 10 0.25 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for drain 1 cm . Fig. 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 102 10 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 7. TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 102 10 0.25 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for drain 1 cm Fig. 8. 1 10 102 tp (s) 103 2 TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.75 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 8 V; VDS = 0 V; - - 10 µA - - -10 µA VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ VGS = 4.5 V; ID = 500 mA; Tj = 150 °C - 460 610 mΩ VGS = 2.5 V; ID = 200 mA; Tj = 25 °C - 420 620 mΩ VGS = 1.8 V; ID = 10 mA; Tj = 25 °C - 0.6 1.1 Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 1.6 - S IGSS gate leakage current -40 °C < Tj < 150 °C VGS = -8 V; VDS = 0 V; -40 °C < Tj < 150 °C RDSon gfs drain-source on-state resistance transfer conductance TR1 (N-channel), Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 500 mA; VGS = 4.5 V; - 0.45 0.68 nC QGS gate-source charge Tj = 25 °C - 0.15 - nC QGD gate-drain charge - 0.15 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 55 83 pF Coss output capacitance Tj = 25 °C - 15 - pF Crss reverse transfer capacitance - 7 - pF td(on) turn-on delay time VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; - 6 12 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 4 - ns td(off) turn-off delay time - 86 172 ns tf fall time - 31 - ns IS = 300 mA; VGS = 0 V; Tj = 25 °C 0.48 0.77 1.2 V ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V TR1 (N-channel), Source-drain diode characteristics VSD source-drain voltage TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.5 -0.8 -1.3 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA VGS = 8 V; VDS = 0 V; - - 10 µA - - -10 µA VGS = -4.5 V; ID = -400 mA; Tj = 25 °C - 670 850 mΩ VGS = -4.5 V; ID = -400 mA; Tj = 150 °C - 1.1 1.4 Ω VGS = -2.5 V; ID = -200 mA; Tj = 25 °C - 1.2 1.5 Ω VGS = -1.8 V; ID = -10 mA; Tj = 25 °C - 1.8 2.8 Ω VDS = -10 V; ID = -200 mA; Tj = 25 °C - 610 - mS IGSS gate leakage current -40 °C < Tj < 150 °C VGS = -8 V; VDS = 0 V; -40 °C < Tj < 150 °C RDSon gfs drain-source on-state resistance transfer conductance TR2 (P-channel), Dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -400 mA; - 0.76 1.14 nC QGS gate-source charge VGS = -4.5 V; Tj = 25 °C - 0.28 - nC QGD gate-drain charge - 0.18 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 58 87 pF Coss output capacitance Tj = 25 °C - 21 - pF Crss reverse transfer capacitance - 12 - pF td(on) turn-on delay time VDS = -10 V; RL = 250 Ω; VGS = -4.5 V; - 18 36 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 30 - ns td(off) turn-off delay time - 80 160 ns tf fall time - 72 - ns -0.48 -0.84 -1.2 V TR2 (P-channel), Source-drain diode characteristics VSD source-drain voltage PMGD290UCEA Product data sheet IS = -300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa351 0.7 ID (A) 0.6 4.5 V 2.5 V 1.8 V 017aaa352 10- 3 VGS = 1.6 V ID (A) 0.5 10- 4 0.4 1.4 V 0.3 (1) (2) 0.50 0.75 (3) 10- 5 0.2 1.2 V 0.1 1.0 V 0.0 Fig. 9. 0 1 2 3 VDS (V) 10- 6 0.00 4 0.25 Tj = 25 °C Tj = 25 °C; VDS = 5 V TR1; Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values 1.00 1.25 VGS (V) Fig. 10. TR1; Sub-threshold drain current as a function of gate-source voltage 017aaa353 2.0 RDSon (Ω) (1) (2) 017aaa354 2.0 RDSon (Ω) (3) 1.5 1.5 1.0 1.0 (4) 0.5 (1) 0.5 (5) (6) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) (2) 0.0 0.7 0 1 Tj = 25 °C ID = 400 mA (1) VGS = 1.3 V (1) Tj = 150 °C (2) VGS = 1.4 V (2) Tj = 25 °C (3) VGS = 1.6 V 2 3 4 VGS (V) 5 Fig. 12. TR1; Drain-source on-state resistance as a function of gate-source voltage; typical values (4) VGS = 1.8 V (5) VGS = 2.5 V (6) VGS = 4.5 V Fig. 11. TR1; Drain-source on-state resistance as a function of drain current; typical values PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa355 0.7 ID (A) 0.6 017aaa356 1.75 a 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.0 0.5 1.0 1.5 0.50 -60 2.0 2.5 VGS (V) VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 14. TR1; Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 13. TR1; Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa357 1.25 017aaa358 102 VGS(th) (V) (1) 1.00 C (pF) (1) 0.75 (2) (2) 10 0.50 (3) (3) 0.25 0.00 -60 0 60 120 Tj (°C) 1 10- 1 180 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) 102 (2) Coss (3) Crss Fig. 15. TR1; Gate-source threshold voltage as a function of junction temperature PMGD290UCEA 10 Fig. 16. TR1; Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa359 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 Fig. 18. Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.5 A; VDS = 10 V; Tamb = 25 °C Fig. 17. TR1; Gate-source voltage as a function of gate charge; typical values 017aaa360 0.7 IS (A) 0.6 017aaa363 -0.5 -4.5 V ID (A) -2.5 V -2.0 V -0.4 VGS = -1.8 V 0.5 -0.3 0.4 (1) (2) -1.6 V 0.3 -0.2 0.2 0.1 0.0 0.0 -1.4 V -0.1 0.2 0.4 0.6 0.0 0.8 1.0 VSD (V) VGS = 0 V 0 -1 -2 -3 VDS (V) -4 Tj = 25 °C (1) Tj = 150 °C Fig. 20. TR2; Output characteristics: drain current as a function of drain-source voltage; typical values (2) Tj = 25 °C Fig. 19. TR1; Source current as a function of sourcedrain voltage; typical values PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa364 -10-3 017aaa365 4 RDSon (Ω) ID (A) (1) (2) (3) 3 -10-4 (1) (2) (3) 2 (4) -10-5 1 -10-6 0.0 -0.5 -1.0 VGS (V) 0 0.0 -1.5 (5) -0.1 -0.2 Tj = 25 °C; VDS = -5 V Tj = 25 °C (1) minimum values (2) typical values (3) maximum values (1) VGS = -1.5 V -0.3 -0.4 ID (A) -0.5 (2) VGS = -1.8 V (3) VGS = -2.0 V (4) VGS = -2.5 V Fig. 21. TR2; Sub-threshold drain current as a function of gate-source voltage (5) VGS = -4.5 V Fig. 22. TR2; Drain-source on-state resistance as a function of drain current; typical values 017aaa366 4 017aaa367 -0.5 ID (A) RDSon (Ω) -0.4 3 -0.3 2 -0.2 (1) (2) 1 (1) -0.1 (2) 0 0 -1 -2 -3 -4 VGS (V) 0.0 0.0 -5 -0.5 ID = -400 mA VDS > ID × RDSon (1) Tj = 150 °C (1) Tj = 25 °C (2) Tj = 25 °C (2) Tj = 150 °C Fig. 23. TR2; Drain-source on-state resistance as a function of gate-source voltage; typical values PMGD290UCEA Product data sheet -1.0 -1.5 VGS (V) -2.0 Fig. 24. TR2; Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa368 2.0 017aaa369 -1.5 a (1) VGS(th) (V) 1.5 -1.0 (2) 1.0 (3) -0.5 0.5 0.0 -60 0 60 120 Tj (°C) 0.0 -60 180 0 60 120 Tj (°C) 180 ID = -0.25 mA; VDS = VGS Fig. 25. TR2; Normalized drain-source on-state resistance as a function of ambient temperature; typical values (1) maximum values (2) typical values (3) minimum values Fig. 26. TR2; Gate-source threshold voltage as a function of junction temperature 017aaa370 102 (1) C (pF) 017aaa371 -5 VGS (V) -4 (2) (3) -3 10 -2 -1 1 -10-1 -1 -10 VDS (V) 0 0.0 -102 f = 1 MHz; VGS = 0 V 0.2 0.4 0.6 QG (nC) 0.8 ID = -0.4 A; VDD = -10 V; Tamb = 25 °C (1) Ciss Fig. 28. TR2; Gate-source voltage as a function of gate charge; typical values (2) Coss (3) Crss Fig. 27. TR2; Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa372 -0.5 VDS IS (A) ID -0.4 VGS(pl) -0.3 VGS(th) VGS -0.2 QGS1 QGS2 QGS QGD QG(tot) (1) -0.1 (2) 017aaa137 0.0 0.0 Fig. 29. Gate charge waveform definitions -0.2 -0.4 -0.6 -0.8 -1.0 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig. 30. TR2; Source current as a function of sourcedrain voltage; typical values PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 15 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 31. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.65 1.3 0.3 0.2 0.25 0.10 Dimensions in mm 06-03-16 Fig. 32. Package outline TSSOP6 (SOT363) PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 16 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 13. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig. 33. Reflow soldering footprint for TSSOP6 (SOT363) 1.5 solder lands 0.3 2.5 4.5 1.5 solder resist occupied area Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig. 34. Wave soldering footprint for TSSOP6 (SOT363) PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 17 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMGD290UCEA v.3 20140328 Product data sheet - PMGD290UCEA v.2 Modifications: • PMGD290UCEA v.2 20130418 Product data sheet - PMGD290UCEA v.1 PMGD290UCEA v.1 20130415 Product data sheet - - PMGD290UCEA Product data sheet Table 7: IGSS parameter unit corrected All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 18 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PMGD290UCEA Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 19 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 20 / 21 PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 8 11 11.1 Test information ................................................... 16 Quality information ............................................. 16 12 Package outline ................................................... 16 13 Soldering .............................................................. 17 14 Revision history ................................................... 18 15 15.1 15.2 15.3 15.4 Legal information .................................................19 Data sheet status ............................................... 19 Definitions ...........................................................19 Disclaimers .........................................................19 Trademarks ........................................................ 20 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 March 2014 PMGD290UCEA Product data sheet All information provided in this document is subject to legal disclaimers. 28 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 21 / 21