SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V ID drain current - - 1 A - 290 380 mΩ VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 500 mA; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 1 2 S source 2 3 D drain Graphic symbol D 3 Transparent top view G DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number PMZ290UNE Package Name Description Version DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PMZ290UNE ZS PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 1 A VGS = 4.5 V; Tamb = 100 °C [1] - 625 mA - 4 A [2] - 360 mW [1] - 715 mW - 2700 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - 680 mA HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] [2] [3] PMZ290UNE Product data sheet 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Measured between all pins. All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature 017aaa374 10 Limit RDSon = VDS/ID ID (A) 1 (1) (2) (3) 10-1 (4) (5) 10-2 10-1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms 2 (5) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 305 360 K/W [2] - 150 175 K/W - - 40 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10- 3 0.05 0.02 0.01 10- 2 10- 1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.75 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ VGS = 4.5 V; ID = 500 mA; Tj = 150 °C - 460 610 mΩ VGS = 2.5 V; ID = 400 mA; Tj = 25 °C - 420 620 mΩ VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 600 1100 mΩ VDS = 10 V; ID = 200 mA; Tj = 25 °C - 1.6 - S total gate charge VDS = 10 V; ID = 500 mA; VGS = 4.5 V; - 0.45 0.68 nC QGS gate-source charge Tj = 25 °C - 0.15 - nC QGD gate-drain charge - 0.15 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 55 83 pF Coss output capacitance Tj = 25 °C - 15 - pF Crss reverse transfer capacitance - 7 - pF td(on) turn-on delay time VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; - 6 12 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 4 - ns td(off) turn-off delay time - 86 172 ns tf fall time - 31 - ns 0.48 0.77 1.2 V IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMZ290UNE Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 017aaa351 0.7 ID (A) 0.6 4.5 V 2.5 V 1.8 V 017aaa352 10- 3 VGS = 1.6 V ID (A) 0.5 10- 4 0.4 1.4 V 0.3 (1) (2) 0.50 0.75 (3) 10- 5 0.2 1.2 V 0.1 1.0 V 0.0 Fig. 6. 0 1 2 3 VDS (V) 10- 6 0.00 4 0.25 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. 017aaa353 2.0 RDSon (Ω) (1) (2) 1.00 1.25 VGS (V) Sub-threshold drain current as a function of gate-source voltage 017aaa354 2.0 RDSon (Ω) (3) 1.5 1.5 1.0 1.0 (4) 0.5 (1) 0.5 (5) (6) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) (2) 0.0 0.7 0 1 Tj = 25 °C ID = 400 mA (1) VGS = 1.3 V (1) Tj = 150 °C (2) VGS = 1.4 V (2) Tj = 25 °C (3) VGS = 1.6 V Fig. 9. (4) VGS = 1.8 V (5) VGS = 2.5 V 2 3 4 VGS (V) 5 Drain-source on-state resistance as a function of gate-source voltage; typical values (6) VGS = 4.5 V Fig. 8. Drain-source on-state resistance as a function of drain current; typical values PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 017aaa355 0.7 ID (A) 0.6 017aaa356 1.75 a 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.0 0.5 1.0 1.5 0.50 -60 2.0 2.5 VGS (V) VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa357 1.25 017aaa358 102 VGS(th) (V) (1) 1.00 C (pF) (1) 0.75 (2) (2) 10 0.50 (3) (3) 0.25 0.00 -60 0 60 120 Tj (°C) 1 10- 1 180 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) 102 (2) Coss (3) Crss Fig. 12. Gate-source threshold voltage as a function of junction temperature PMZ290UNE 10 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 017aaa359 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 Fig. 15. Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.5 A; VDS = 10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa360 0.7 IS (A) 0.6 0.5 0.4 (1) (2) 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 12. Package outline 0.62 0.55 0.55 0.47 0.50 0.46 3 0.30 0.22 0.65 0.30 0.22 2 0.20 0.12 1.02 0.95 1 0.35 Dimensions in mm 03-04-03 Fig. 18. Package outline DFN1006-3 (SOT883) 13. Soldering 1.3 0.7 R0.05 (12×) solder lands 0.9 0.6 0.7 solder resist solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883) PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZ290UNE v.1 20140514 Product data sheet - - PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PMZ290UNE Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 14 PMZ290UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 6 11 Test information ................................................... 10 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 May 2014 PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 14