83B PMZB290UNE SO T8 20 V, single N-channel Trench MOSFET Rev. 3 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage Ultra thin package profile of 0.37mm Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -8 - 8 V - - 1 A - 290 380 mΩ drain current ID VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 4.5 V; ID = 500 mA; Tj = 25 °C Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB290UNE DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 4. Marking Table 4. Marking codes Type number Marking code PMZB290UNE 0000 0110 [1] For DFN1006B-3 (SOT883B) binary marking code description see Figure 1. 4.1 Binary marking code description PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. PMZB290UNE Product data sheet DFN1006B-3 (SOT883B) binary marking code description All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V drain current ID total power dissipation Ptot - 1 A VGS = 4.5 V; Tamb = 100 °C [1] - 625 mA Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM VGS = 4.5 V; Tamb = 25 °C [1] Tamb = 25 °C - 4 A [2] - 360 mW [1] - 715 mW - 2700 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - 680 mA HBM [3] - 2000 V ESD maximum rating electrostatic discharge voltage VESD [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 2. 017aaa124 120 −25 25 75 125 Normalized total power dissipation as a function of junction temperature PMZB290UNE Product data sheet 0 −75 175 Tj (°C) Fig 3. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa374 10 Limit RDSon = VDS/ID ID (A) 1 (1) (2) (3) 10-1 (4) (5) 10-2 10-1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMZB290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 305 360 K/W [2] - 150 175 K/W - - 40 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa109 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa110 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.33 0.2 0.1 0 10 10−3 0.05 0.02 0.01 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMZB290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.75 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ VGS = 4.5 V; ID = 500 mA; Tj = 150 °C - 460 610 mΩ VGS = 2.5 V; ID = 400 mA; Tj = 25 °C - 420 620 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 600 1100 mΩ VDS = 10 V; ID = 200 mA; Tj = 25 °C - 1.6 - S VDS = 10 V; ID = 500 mA; VGS = 4.5 V; Tj = 25 °C - 0.45 0.68 nC - 0.15 - nC - 0.15 - nC - 55 83 pF - 15 - pF - 7 - pF - 6 12 ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 4 - ns td(off) turn-off delay time - 86 172 ns tf fall time - 31 - ns 0.48 0.77 1.2 V Source-drain diode VSD source-drain voltage PMZB290UNE Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa351 0.7 ID (A) 0.6 4.5 V 2.5 V 1.8 V VGS = 1.6 V 017aaa352 10–3 ID (A) 0.5 10–4 0.4 (1) (2) 0.50 0.75 (3) 1.4 V 0.3 10–5 0.2 1.2 V 0.1 1.0 V 0.0 0 1 2 3 VDS (V) 4 10–6 0.00 Tj = 25 °C 0.25 1.00 1.25 VGS (V) Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 7. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa353 2.0 RDSon (Ω) (2) (1) Fig 8. Sub-threshold drain current as a function of gate-source voltage 017aaa354 2.0 RDSon (Ω) (3) 1.5 1.5 1.0 1.0 (4) 0.5 (1) 0.5 (5) (6) (2) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) 0.7 0.0 0 1 Tj = 25 °C ID = 400 mA (1) VGS = 1.3 V (1) Tj = 150 °C (2) VGS = 1.4 V (2) Tj = 25 °C 2 3 4 VGS (V) 5 (3) VGS = 1.6 V (4) VGS = 1.8 V (5) VGS = 2.5 V (6) VGS = 4.5 V Fig 9. Drain-source on-state resistance as a function of drain current; typical values PMZB290UNE Product data sheet Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa355 0.7 ID (A) 0.6 017aaa356 1.75 a 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS (V) 0.50 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa357 1.25 Fig 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa358 102 VGS(th) (V) (1) 1.00 C (pF) (1) 0.75 (2) (2) 10 (3) 0.50 (3) 0.25 0.00 –60 0 60 120 Tj (°C) 180 1 10–1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 13. Gate-source threshold voltage as a function of junction temperature PMZB290UNE Product data sheet 10 VDS (V) 102 Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 017aaa359 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 0.4 0.5 QG (nC) ID = 0.5 A; VDS = 10 V; Tamb = 25 °C Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Gate charge waveform definitions 017aaa360 0.7 IS (A) 0.6 0.5 0.4 (2) (1) 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 17. Source current as a function of source-drain voltage; typical values PMZB290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 18. Duty cycle definition 9. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 19. Package outline DFN1006B-3 (SOT883B) PMZB290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 20. Reflow soldering footprint for DFN1006B-3 (SOT883B) PMZB290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMZB290UNE v.3 20120323 Product data sheet - PMZB290UNE v.2 Modifications: • 1.2 “Features and benefits” corrected. PMZB290UNE v.2 20120207 Product data sheet - PMZB290UNE v.1 PMZB290UNE v.1 20120201 Product data sheet - - PMZB290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMZB290UNE NXP Semiconductors 20 V, single N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 23 March 2012 Document identifier: PMZB290UNE