SO T6 66 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage ID drain current Per transistor VGS = 4.5 V; Tamb = 25 °C [1] -8 - 8 V - - 800 mA - 290 380 mΩ Static characteristics (per transistor) RDSon [1] drain-source on-state resistance VGS = 4.5 V; ID = 500 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D2 D1 4 G1 1 2 G2 3 SOT666 S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDT290UNE - plastic surface-mounted package; 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code PMDT290UNE AE 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - 20 V -8 8 V Per transistor VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 800 mA VGS = 4.5 V; Tamb = 100 °C [1] - 500 mA - 3.2 A [2] - 330 mW [1] - 390 mW - 1090 mW - 500 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Per device total power dissipation Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C PMDT290UNE Product data sheet Tamb = 25 °C [2] Ptot All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tstg storage temperature Conditions Min Max Unit -65 150 °C - 370 mA - 2000 V Source-drain diode source current IS Tamb = 25 °C ESD maximum rating electrostatic discharge voltage VESD [3] HBM [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMDT290UNE Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 017aaa361 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10–1 (3) (4) (5) 10–2 10–1 1 10 102 VDS (V) IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 330 380 K/W [2] - 280 320 K/W - - 115 K/W - - 250 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to solder point Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. PMDT290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB; standard footprint Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDT290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.75 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ VGS = 4.5 V; ID = 500 mA; Tj = 150 °C - 460 610 mΩ VGS = 2.5 V; ID = 400 mA; Tj = 25 °C - 420 620 mΩ VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 600 1100 mΩ VDS = 10 V; ID = 200 mA; Tj = 25 °C - 1.6 - S - 0.45 0.68 nC - 0.15 - nC - 0.15 - nC - 55 83 pF - 15 - pF - 7 - pF - 6 12 ns RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 10 V; ID = 500 mA; VGS = 4.5 V; Tj = 25 °C VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 4 - ns td(off) turn-off delay time - 86 172 ns tf fall time - 31 - ns 0.48 0.77 1.2 V Source-drain diode (per transistor) VSD source-drain voltage PMDT290UNE Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 017aaa351 0.7 ID (A) 0.6 4.5 V 2.5 V 1.8 V VGS = 1.6 V 017aaa352 10–3 ID (A) 0.5 10–4 0.4 (1) (2) 0.50 0.75 (3) 1.4 V 0.3 10–5 0.2 1.2 V 0.1 1.0 V 0.0 0 1 2 3 VDS (V) 4 10–6 0.00 Tj = 25 °C 0.25 1.00 1.25 VGS (V) Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa353 2.0 RDSon (Ω) (2) (1) Sub-threshold drain current as a function of gate-source voltage 017aaa354 2.0 RDSon (Ω) (3) 1.5 1.5 1.0 1.0 (4) 0.5 (1) 0.5 (5) (6) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) (2) 0.0 0.7 0 1 Tj = 25 °C ID = 400 mA (1) VGS = 1.3 V (1) Tj = 150 °C (2) VGS = 1.4 V (2) Tj = 25 °C 2 3 4 VGS (V) 5 (3) VGS = 1.6 V (4) VGS = 1.8 V (5) VGS = 2.5 V (6) VGS = 4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMDT290UNE Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 017aaa355 0.7 ID (A) 0.6 017aaa356 1.75 a 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS (V) 0.50 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa357 1.25 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa358 102 VGS(th) (V) (1) 1.00 C (pF) (1) 0.75 (2) (2) 10 0.50 (3) (3) 0.25 0.00 –60 0 60 120 Tj (°C) 180 1 10–1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature PMDT290UNE Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 017aaa359 5 VDS VGS (V) 4 ID VGS(pl) 3 VGS(th) 2 VGS QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 0.4 0.5 QG (nC) ID = 0.5 A; VDS = 10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa360 0.7 IS (A) 0.6 0.5 0.4 (1) (2) 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMDT290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMDT290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 10 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 SOT666 Fig 18. Package outline SOT666 PMDT290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 19. Reflow soldering footprint for SOT666 PMDT290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMDT290UNE v.1 20110913 Product data sheet - - PMDT290UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 September 2011 © NXP B.V. 2011. All rights reserved. 13 of 16 PMDT290UNE NXP Semiconductors 20 V, 800 mA dual N-channel Trench MOSFET 12. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Quality information . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 September 2011 Document identifier: PMDT290UNE