SO T3 23 PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • Low RDSon Very fast switching Trench MOSFET technology 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -1 A - 175 200 mΩ VGS = -4.5 V; Tamb 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = -4.5 V; ID = -1 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 S SC-70 (SOT323) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package PMF170XP Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code [1] PMF170XP XD% [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -12 12 V ID drain current VGS = -4.5 V; Tamb 25 °C [1] - -1 A VGS = -4.5 V; Tamb = 100 °C [1] - -0.7 A - -4 A [2] - 290 mW [1] - 360 mW - 1670 mW -55 150 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 2 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET Symbol Parameter Tamb Tstg Conditions Min Max Unit ambient temperature -55 150 °C storage temperature -65 150 °C - -0.4 A Source-drain diode IS source current Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMF170XP Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 29 October 2013 25 © NXP N.V. 2013. All rights reserved 3 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa300 -10 Limit RDSon = VDS/ID ID (A) (1) -1 (2) -10 -1 (3) (4) (5) -10 -2 -10 -1 -1 -10 -10 2 VDS (V) IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms 2 (5) DC; Tamb = 25 °C; drain mounting pad 6 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMF170XP Product data sheet Min Typ Max Unit [1] - 377 430 K/W [2] - 305 350 K/W - 65 75 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 4 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa301 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0 0.01 1 10- 3 10- 2 10- 1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa302 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 10 0.02 0 0.01 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 102 10 103 tp (s) 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 A; VDS = VGS; Tj = 25 °C -0.65 -0.9 -1.15 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 5 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ VGS = -4.5 V; ID = -1 A; Tj = 150 °C - 250 284 mΩ VGS = -2.5 V; ID = -1 A; Tj = 25 °C - 240 300 mΩ VDS = -5 V; ID = -1 A; Tj = 25 °C - 1.9 - S total gate charge VDS = -10 V; ID = -1 A; VGS = -4.5 V; - 2.6 3.9 nC QGS gate-source charge Tj = 25 °C - 0.63 - nC QGD gate-drain charge - 0.53 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 280 - pF Coss output capacitance Tj = 25 °C - 43 - pF Crss reverse transfer capacitance - 30 - pF td(on) turn-on delay time VDS = -10 V; ID = -1 A; VGS = -4.5 V; - 10 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 16 - ns td(off) turn-off delay time - 31 - ns tf fall time - 13 - ns - -0.7 -1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMF170XP Product data sheet IS = -0.4 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 6 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa303 -4 - 4.5 V ID (A) VGS = - 3.5 V ID (A) - 3.0 V -3 017aaa129 - 10- 3 - 2.5 V - 10- 4 - 2.0 V -2 (1) - 1.8 V (2) (3) - 10- 5 -1 - 1.5 V 0 Fig. 6. 0 -1 -2 -3 - 10- 6 0.0 -4 VDS (V) - 0.5 Tj = 25 °C Tj = 25 °C; VDS = -3 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. 017aaa304 500 - 1.0 VGS (V) Sub-threshold drain current as a function of gate-source voltage 017aaa305 600 RDSon (mΩ) - 1.5 RDSon (mΩ) 400 (1) 400 300 (2) (3) 200 (1) (4) (5) 200 (2) 100 0 -2.0 -2.5 -3.0 -3.5 ID (A) 0 -4.0 -2 Tj = 25 °C ID = -1 A (1) VGS = -2.5 V (1) Tj = 150 °C (2) VGS = -3.0 V (2) Tj = 25 °C (3) VGS = -3.5 V Fig. 9. (4) VGS = -4.0 V (5) VGS = -4.5 V Fig. 8. 0 -4 VGS (V) -6 Drain-source on-state resistance as a function of gate-source voltage; typical values Drain-source on-state resistance as a function of drain current; typical values PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 7 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa306 -4 ID (A) (1) 017aaa307 1.6 a (2) 1.4 -3 1.2 -2 1.0 -1 0.8 (1) (2) 0 0 -1 -2 VGS (V) 0.6 -60 -3 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa134 - 1.6 VGS(th) (V) (1) - 1.2 017aaa308 103 C (pF) Ciss (2) 102 - 0.8 (3) Coss - 0.4 Crss 0.0 - 60 0 60 120 Tj (°C) 10 -10-1 180 -1 ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) -102 (2) Coss (3) Crss Fig. 12. Gate-source threshold voltage as a function of junction temperature PMF170XP -10 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 8 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa309 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 1 2 QG (nC) Fig. 15. Gate charge waveform definitions 3 ID = -1.0 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa310 -2.0 IS (A) -1.5 (1) -1.0 (2) -0.5 0.0 0.0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 9 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 12. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 1.3 0.4 0.3 0.25 0.10 Dimensions in mm 04-11-04 Fig. 18. Package outline SC-70 (SOT323) PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 10 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 13. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig. 19. Reflow soldering footprint for SC-70 (SOT323) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 20. Wave soldering footprint for SC-70 (SOT323) PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 11 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMF170XP v.2 20131029 Product data sheet - PMF170XP v.1 Modifications: • PMF170XP v.1 20110902 Product data sheet - - PMF170XP Product data sheet Figure 13 corrected All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 12 / 15 PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Test information ................................................... 10 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 October 2013 PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013. All rights reserved 15 / 15