SO T2 23 PMT29EN 30 V, 6 A N-channel Trench MOSFET Rev. 1 — 31 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V - - 6 A - 24 29 mΩ drain current ID [1] VGS = 10 V; Tamb = 25 °C Static characteristics drain-source on-state resistance RDSon [1] VGS = 10 V; ID = 6 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin Pinning information Symbol Description 1 G gate 2 D drain 3 S source 4 D drain Simplified outline Graphic symbol D 4 G 1 2 3 SOT223 (SC-73) S 017aaa253 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number PMT29EN Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4. Marking Table 4. Marking codes Type number Marking code PMT29EN MT29EN PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage V drain current ID total power dissipation Ptot 20 VGS = 10 V; Tamb = 25 °C - 6 A VGS = 10 V; Tamb = 100 °C [1] - 3.9 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -20 [1] Tamb = 25 °C - 24 A [2] - 820 mW [1] - 1760 mW - 8330 mW Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.9 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Normalized total power dissipation as a function of junction temperature PMT29EN Product data sheet 0 −75 175 Tj (°C) Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 017aaa319 102 ID (A) Limit RDSon = VDS/ID 10 (1) (2) 1 (3) (4) (5) 10–1 (6) 10–2 10–1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 131 151 K/W [2] - 62 71 K/W - 8 15 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 017aaa320 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10–3 10–2 10–1 1 102 10 103 tp(s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa321 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 10 0.2 0.1 0.05 0.02 0 0.01 1 10–3 10–2 10–1 1 102 10 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 6 A; Tj = 25 °C - 24 29 mΩ VGS = 10 V; ID = 6 A; Tj = 150 °C - 37 45 mΩ VGS = 4.5 V; ID = 5.1 A; Tj = 25 °C - 29 36 mΩ VDS = 10 V; ID = 6 A; Tj = 25 °C - 18 - S VDS = 15 V; ID = 6 A; VGS = 10 V; Tj = 25 °C - 9.6 11 nC - 1.5 - nC - 1.5 - nC drain-source on-state resistance RDSon forward transconductance gfs Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 6 A - 492 - pF - 115 - pF - 54 - pF - 5 - ns - 28 - ns turn-off delay time - 94 - ns fall time - 40 - ns - 0.8 1.2 V Source-drain diode source-drain voltage VSD IS = 1.9 A; VGS = 0 V; Tj = 25 °C 017aaa322 24 4.5 V 10 V ID (A) 017aaa244 10–3 ID (A) 3.6 V VGS = 3.2 V 16 10–4 (1) 3.0 V 2.8 V 8 (2) (3) 10–5 2.6 V 0 0 1 2 3 VDS (V) 4 10–6 Tj = 25 °C 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values PMT29EN Product data sheet Fig 7. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 017aaa323 100 RDSon (mΩ) (1) (2) (4) (3) 017aaa324 200 RDSon (mΩ) (5) 80 150 60 100 40 (6) (7) (8) (1) 50 20 (2) 0 2 10 18 0 26 ID (A) 0 2 Tj = 25 °C ID = 6 A (1) VGS = 2.6 V (1) Tj = 150 °C (2) VGS = 2.8 V (2) Tj = 25 °C 4 6 VGS (V) 8 (3) VGS = 3.0 V (4) VGS = 3.2 V (5) VGS = 3.6 V (6) VGS = 4.0 V (7) VGS = 4.5 V (8) VGS = 10.0 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values Fig 9. 017aaa325 24 Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa328 1.6 a ID (A) (1) (2) 1.4 16 1.2 1.0 8 (2) 0 0 1 2 (1) 0.8 3 VGS (V) 4 0.6 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMT29EN Product data sheet Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 017aaa249 3 017aaa326 103 (1) VGS(th) (V) (1) C (pF) 2 1 (2) 102 (2) (3) (3) 0 –60 0 60 120 Tj (°C) 180 10 10–1 1 10 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa313 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0.0 2.5 5.0 7.5 QG (nC) 10.0 ID = 6 A; VDS = 10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values PMT29EN Product data sheet Fig 15. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 017aaa327 10 IS (A) 8 6 4 (2) (1) 2 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT223 JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig 18. Package outline SOT223 (SC-73) PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 19. Reflow soldering footprint for SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 20. Wave soldering footprint for SOT223 (SC-73) PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMT29EN v.1 20110831 Product data sheet - - PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMT29EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 August 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 PMT29EN NXP Semiconductors 30 V, 6 A N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 31 August 2011 Document identifier: PMT29EN