DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 20 May 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 44 mΩ 3. Applications • • • • Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 3.2 A - 44 67 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 3.2 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline Graphic symbol D 1 4 3 G 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package PMXB65ENE Name Description Version DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm SOT1215 7. Marking Table 4. Marking codes Type number Marking code PMXB65ENE 00 10 00 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code description PMXB65ENE Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 3.2 A VGS = 10 V; Tamb = 100 °C [1] - 2.5 A - 12.8 A [2] - 0.4 W [1] - 1.07 W - 8.33 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.9 A Source-drain diode IS source current Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 2. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMXB65ENE Product data sheet 0 - 75 175 Fig. 3. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 20 May 2015 25 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-008875 102 lD (A) 10 tp = 10 µs tp = 100 µs 1 tp = 1 ms tp = 10 ms DC; Tsp = 25 °C 10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] PMXB65ENE Product data sheet Min Typ Max Unit [1] - 271 312 K/W [2] - 102 117 K/W - 10 15 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-008918 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-008919 duty cycle = 1 0.75 0.5 0.33 Zth(j-a) (K/W) 102 10 0.02 0.01 0 1 10-3 0.25 0.2 0.1 0.05 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 6. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMXB65ENE Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.4 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -16 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 10 V; ID = 3.2 A; Tj = 25 °C - 44 67 mΩ VGS = 10 V; ID = 3.2 A; Tj = 150 °C - 71 107 mΩ VGS = 4.5 V; ID = 2.9 A - 56 79 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 3.2 A; Tj = 25 °C - 26 - S RG gate resistance f = 1 MHz - 1 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 15 V; ID = 3.2 A; VGS = 10 V; - 6 11 nC QGS gate-source charge Tj = 25 °C - 0.7 - nC QGD gate-drain charge - 0.9 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 295 - pF Coss output capacitance Tj = 25 °C - 40 - pF Crss reverse transfer capacitance - 31 - pF td(on) turn-on delay time VDS = 15 V; ID = 3.2 A; VGS = 10 V; - 3 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 12 - ns td(off) turn-off delay time - 11 - ns tf fall time - 3 - ns - 0.8 1.2 V Source-drain diode VSD source-drain voltage PMXB65ENE Product data sheet IS = 0.9 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-008889 16 ID (A) 4.5 V 10 V 12 aaa-008890 10-3 ID (A) 4.0 V min typ max 10-4 3.5 V 8 3.0 V 10-5 4 2.5 V 0 Fig. 7. VGS = 2.25 V 0 1 2 3 VDS (V) 10-6 4 0 1 2 3 4 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-016523 250 2.5 V RDSon (mΩ) 200 3.0 V 3.3 V aaa-008896 250 3.5 V RDSon (mΩ) 200 2.25 V 3.8 V 150 150 4.0 V 100 100 Tj = 150 °C 4.5 V 50 0 50 VGS = 10 V 0 4 8 12 ID (A) Tj = 25 °C 0 16 Tj = 25 °C Fig. 9. VGS (V) Product data sheet 2 4 6 8 10 VGS (V) ID = 3.2 A Drain-source on-state resistance as a function of drain current; typical values PMXB65ENE 0 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-008905 12 aaa-008897 2 a ID (A) 1.5 8 1 4 Tj = 25 °C 0.5 Tj = 150 °C 0 0 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 180 aaa-008909 103 VGS(th) (V) Tj (°C) Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-008907 4 0 C (pF) Ciss 3 102 Coss 2 max Crss 10 1 typ min 0 -60 0 60 120 Tj(°C) 1 0,1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 100 f = 1 MHz; VGS = 0 V Fig. 13. Gate-source threshold voltage as a function of junction temperature PMXB65ENE 1 Fig. 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET aaa-008916 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 2 4 QG(nC) Fig. 16. MOSFET transistor: Gate charge waveform definitions 6 ID = 3.2 A; VDS = 15 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-008917 4 IS (A) 3 Tj = 150 °C 2 Tj = 25 °C 1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 17. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 18. Duty cycle definition PMXB65ENE Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 12. Package outline DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215 visible depend upon used manufacturing technology (2x) solderable lead end, protrusion max. 0.02 mm (3x) pin 1 index area visible depend upon used manufacturing technology (4x) e b (2x) 1 2 L (2x) E E1 e1 L1 D A1 3 b1 A D1 0 1 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 b b1 D D1 E E1 e e1 min 0.34 0.22 0.245 1.05 0.87 0.95 0.16 nom 0.37 0.25 0.275 1.10 0.90 1.00 0.19 0.75 max 0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24 0.1 L L1 0.17 0.195 0.20 0.225 0.25 0.275 Note 1. Dimension A is including plating thickness. Outline version sot1215_po References IEC JEDEC JEITA European projection Issue date 13-03-05 13-03-06 SOT1215 Fig. 19. Package outline DFN1010D-3 (SOT1215) PMXB65ENE Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215) PMXB65ENE Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMXB65ENE v.3 20150520 Product data sheet - PMXB65ENE v.2 Modifications: • • PMXB65ENE v.2 20130924 Product data sheet - PMXB65ENE v.1 PMXB65ENE v.1 20130910 Product data sheet - - PMXB65ENE Product data sheet Figure 1 added Figure 9 corrected All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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PMXB65ENE Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMXB65ENE Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 15 PMXB65ENE NXP Semiconductors 30 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 May 2015 PMXB65ENE Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15