Data Sheet

SO
T2
3
NX138AK
60 V, N-channel Tench MOSFET
10 June 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
•
•
•
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
60
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
190
mA
-
3
4.5
Ω
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = 10 V; ID = 190 mA; Tj = 25 °C
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .
NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
3
D
G
1
2
TO-236AB (SOT23)
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
NX138AK
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
NX138AK
AP%
[1]
% = placeholder for manufacturing site code
NX138AK
Product data sheet
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1]
-
190
mA
VGS = 10 V; Tamb = 100 °C
[1]
-
120
mA
-
765
mA
[2]
-
265
mW
[1]
-
325
mW
-
1.33
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
190
mA
Source-drain diode
IS
[1]
[2]
source current
Tamb = 25 °C
[1]
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
120
017aaa124
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
- 25
25
75
125
Tj (°C)
0
- 75
175
Fig. 1. Normalized total power dissipation as a function
of junction temperature
NX138AK
Product data sheet
- 25
25
75
125
Tj (°C)
175
Fig. 2. Normalized continuous drain current as a
function of junction temperature
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
aaa-023297
1
tp =
10 µs
ID
(A)
Limit RDSon = VDS/ID
100 µs
10-1
1 ms
10-2
10-3
10-1
DC; Tsp = 25 °C
10 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
100 ms
1
10
102
VDS (V)
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
[1]
[2]
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
410
470
K/W
[2]
-
330
380
K/W
-
80
95
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
NX138AK
Product data sheet
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
aaa-023298
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023299
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102
0.33
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
1
10
102
2
tp (s)
103
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX138AK
Product data sheet
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NXP Semiconductors
60 V, N-channel Tench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS=VGS; Tj = 25 °C
0.8
1.1
1.5
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
2
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-2
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
-
0.5
µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-0.5
µA
VGS = 5 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -5 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 10 V; ID = 190 mA; Tj = 25 °C
-
3
4.5
Ω
VGS = 10 V; ID = 190 mA; Tj = 150 °C
-
6
9
Ω
VGS = 5 V; ID = 170 mA; Tj = 25 °C
-
4
5.2
Ω
VGS = 2.5 V; ID = 130 mA; Tj = 25 °C
-
5
10
Ω
VDS = 10 V; ID = 180 mA; Tj = 25 °C
-
3.5
-
S
VDS = 30 V; ID = 190 mA; VGS = 10 V;
Tj = 25 °C
-
0.9
1.4
nC
-
0.1
-
nC
-
0.2
-
nC
-
15
20
pF
-
2.3
-
pF
-
1.5
-
pF
-
8
12
ns
-
10
-
ns
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
8
20
ns
tf
fall time
-
5
-
ns
-
0.8
1.2
V
VDS = 30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 30 V; ID = 190 mA; VGS = 10 V;
RG(ext) = 75 Ω; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
NX138AK
Product data sheet
IS = 190 mA; VGS = 0 V; Tj = 25 °C
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
aaa-023300
0.8
ID
(A)
ID
(A)
3.5 V
0.6
3.0 V
0.4
aaa-023301
10-3
10 V
4.5 V
min
10-4
typ
max
2.6 V
10-5
0.2
0
VGS = 2.2 V
0
1
2
3
VDS (V)
10-6
4
Tj = 25 °C
1
1.5
VGS (V)
2
Fig. 7. Sub-threshold drain current as a function of gatesource voltage
aaa-023302
2.6 V
0.5
VDS = 5 V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
7
RDSon
(Ω)
6
0
aaa-023303
8
RDSon
(Ω)
7
3.0 V
6
5
Tj = 150 °C
5
4
4
3
3.2 V
3.5 V
4.5 V
VGS = 10 V
2
3
2
1
0
Tj = 25 °C
1
0
0.2
0.4
0.6
ID (A)
0
0.8
Tj = 25 °C
Product data sheet
5
10
15
VGS (V)
20
ID = 190 mA
Fig. 8. Drain-source on-state resistance as a function of
drain current; typical values
NX138AK
0
Fig. 9. Drain-source on-state resistance as a function of
gate-source voltage; typical values
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
aaa-023304
0.4
aaa-023305
2.5
a
ID
(A)
2
1.5
0.2
1
Tj = 150 °C
Tj = 25 °C
0.5
0
0
1
2
3
VGS (V)
0
-60
4
0
60
120
Tj (°C)
180
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical values
aaa-023306
2
VGS(th)
(V)
C
(pF)
max
1.5
aaa-023307
102
Ciss
typ
1
10
min
0.5
Coss
Crss
0
-60
0
60
120
Tj (°C)
1
10-1
180
ID = 250 μA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
NX138AK
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical values
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
aaa-023308
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
2
0
QGS2
0
0.2
0.4
0.6
QGS
QGD
QG(tot)
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0.8
1
QG (nC)
VDS = 30 V; ID = 0.9 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-023309
0.2
IS
(A)
0.1
Tj = 150 ºC
0
0
0.4
Tj = 25 ºC
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
NX138AK
Product data sheet
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60 V, N-channel Tench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT23
B
D
A
E
X
HE
v
A
3
Q
A
A1
1
c
2
e1
bp
w
B
Lp
e
detail X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
max
nom
min
A
A1
1.1
0.1
0.9
D
E
0.48 0.15
bp
c
3.0
1.4
0.38 0.09
2.8
1.2
e
e1
1.9
0.95
HE
Lp
Q
2.5
0.45 0.55
2.1
0.15 0.45
v
w
0.2
0.1
sot023_po
Outline
version
SOT23
References
IEC
JEDEC
JEITA
European
projection
Issue date
14-06-19
14-09-22
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
NX138AK
Product data sheet
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
3
solder resist
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
NX138AK
Product data sheet
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NX138AK
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60 V, N-channel Tench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
NX138AK v.2
20160610
Product data sheet
-
NX138AK v.1
Modifications:
NX138AK v.1
NX138AK
Product data sheet
•
Title changed for figures 11 and 12 to juction temperature
20160607
Product data sheet
-
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-
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
15. Legal information
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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NX138AK
Product data sheet
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products are for illustrative purposes only. NXP Semiconductors makes
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NX138AK
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60 V, N-channel Tench MOSFET
In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without NXP Semiconductors’ warranty
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Notice: All referenced brands, product names, service names and
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Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
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TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
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Corporation.
NX138AK
Product data sheet
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NX138AK
NXP Semiconductors
60 V, N-channel Tench MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
©
NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 June 2016
NX138AK
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 June 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
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