Data Sheet

SO
T3
23
NX138BKW
60 V, N-channel Trench MOSFET
15 June 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
•
•
•
•
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
60
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
210
mA
-
2.1
3.5
Ω
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 10 V; ID = 200 mA; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
2
for drain 1 cm .
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NX138BKW
NXP Semiconductors
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
3
D
G
1
2
SC-70 (SOT323)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
NX138BKW
Package
Name
Description
Version
SC-70
plastic surface-mounted package; 3 leads
SOT323
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
NX138BKW
B8%
[1]
NX138BKW
Product data sheet
% = placeholder for manufacturing site code
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NX138BKW
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60 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1]
-
210
mA
VGS = 10 V; Tamb = 100 °C
[1]
-
135
mA
VGS = 10 V; Tsp = 25 °C
-
330
mA
-
855
mA
[2]
-
266
mW
[1]
-
321
mW
-
1.33
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
210
mA
Source-drain diode
IS
source current
NX138BKW
Product data sheet
Tamb = 25 °C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
[2]
for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
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NX138BKW
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60 V, N-channel Trench MOSFET
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
- 25
25
75
125
Tj (°C)
175
Normalized continuous drain current as a
function of junction temperature
aaa-023342
1
tp =
10 µs
ID
(A)
100 µs
Limit RDSon = VDS/ID
10-1
1 ms
10-2
10-3
10-1
DC; Tsp = 25 °C
10 ms
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
100 ms
1
10
102
VDS (V)
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
NX138BKW
Product data sheet
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15 June 2016
Min
Typ
Max
Unit
[1]
-
410
470
K/W
[2]
-
340
390
K/W
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NX138BKW
NXP Semiconductors
60 V, N-channel Trench MOSFET
Symbol
Parameter
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
Conditions
Min
Typ
Max
Unit
-
75
85
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
aaa-023343
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.50
0.33
102
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023344
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.50
102
0.33
0.20
0.25
0.10
0.05
10
10-3
0.02
0.01
0
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX138BKW
Product data sheet
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NX138BKW
NXP Semiconductors
60 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS=VGS; Tj = 25 °C
0.5
1
1.5
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 5 V; VDS = 0 V; Tj = 25 °C
-
-
0.3
µA
VGS = -5 V; VDS = 0 V; Tj = 25 °C
-
-
-0.3
µA
VGS = 10 V; ID = 200 mA; Tj = 25 °C
-
2.1
3.5
Ω
VGS = 10 V; ID = 200 mA; Tj = 150 °C
-
4.3
7.2
Ω
VGS = 5 V; ID = 170 mA; Tj = 25 °C
-
2.2
3.8
Ω
VGS = 2.5 V; ID = 75 mA; Tj = 25 °C
-
2.6
5
Ω
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
0.7
-
S
RDSon
gfs
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
VDS = 30 V; ID = 200 mA; VGS = 10 V;
-
0.5
0.7
nC
QGS
gate-source charge
Tj = 25 °C
-
0.12
-
nC
QGD
gate-drain charge
-
0.12
-
nC
Ciss
input capacitance
VDS = 30 V; f = 1 MHz; VGS = 0 V;
-
20
-
pF
Coss
output capacitance
Tj = 25 °C
-
3.1
-
pF
Crss
reverse transfer
capacitance
-
2
-
pF
td(on)
turn-on delay time
VDS = 30 V; ID = 200 mA; VGS = 10 V;
-
8
12
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
8
-
ns
td(off)
turn-off delay time
-
13
20
ns
tf
fall time
-
5
-
ns
-
0.9
1.2
V
Source-drain diode
VSD
source-drain voltage
NX138BKW
Product data sheet
IS = 200 mA; VGS = 0 V; Tj = 25 °C
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NXP Semiconductors
60 V, N-channel Trench MOSFET
aaa-023345
0.8
VGS = 10 V
ID
(A)
2.5 V
4.5 V
aaa-023346
10-3
3.5 V
ID
(A)
0.6
min
10-4
typ
max
2.2 V
0.4
2.0 V
0.2
0
Fig. 6.
10-5
1.8 V
0
1
2
3
4
VDS (V)
10-6
5
0
Tj = 25 °C
VDS = 5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values Fig. 7.
Tj = 25 °C
aaa-023347
8
1.8 V
RDSon
(Ω)
2.0 V
2.2 V
0.5
1
6
6
4
Tj = 150 °C
4
3
2
3V
4.5 V
VGS = 10 V
0
0.2
0.4
0.6
ID (A)
1
0
0.8
Product data sheet
0
5
VGS (V)
10
ID = 0.2 A
Drain-source on-state resistance as a function
of drain current; typical values
NX138BKW
Tj = 25 °C
2
Tj = 25 °C
Fig. 8.
2
aaa-023348
5
0
VGS (V)
Sub-threshold drain current as a function of
gate-source voltage
8
RDSon
(Ω)
7
2.5 V
1.5
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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NX138BKW
NXP Semiconductors
60 V, N-channel Trench MOSFET
aaa-023349
0.6
aaa-023350
2.5
a
ID
(A)
2
0.4
1.5
1
0.2
Tj = 150 °C
0
0
Tj = 25 °C
1
2
0.5
3
VGS (V)
0
-60
4
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
120
Tj (°C)
180
aaa-023352
102
VGS(th)
(V)
C
(pF)
max
1.5
60
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-023351
2
0
Ciss
1
typ
0.5
min
10
Coss
Crss
0
-60
0
60
120
Tj (°C)
1
10-1
180
ID = 250 μA; VDS = VGS
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
NX138BKW
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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NXP Semiconductors
60 V, N-channel Trench MOSFET
aaa-023353
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
2
0
QGS2
0
0.2
0.4
0.6
QGS
QGD
QG(tot)
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0.8
1
QG (nC)
VDS = 30 V; ID = 0.2 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-023354
0.2
IS
(A)
0.1
Tj = 150 ºC
0
0
0.4
Tj = 25 ºC
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
NX138BKW
Product data sheet
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60 V, N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
HE
y
v M A
3
Q
A
A1
1
c
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT323
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig. 18. Package outline SC-70 (SOT323)
NX138BKW
Product data sheet
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60 V, N-channel Trench MOSFET
13. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
solder paste
1.3
occupied area
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig. 19. Reflow soldering footprint for SC-70 (SOT323)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2×)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig. 20. Wave soldering footprint for SC-70 (SOT323)
NX138BKW
Product data sheet
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60 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
NX138BKW v.1
20160615
Product data sheet
-
-
NX138BKW
Product data sheet
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60 V, N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
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15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
NX138BKW
Product data sheet
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authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
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inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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in the customer’s applications or products, or the application or use by
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and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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60 V, N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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may be subject to export control regulations. Export might require a prior
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the product is not suitable for automotive use. It is neither qualified nor
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In the event that customer uses the product for design-in and use in
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NX138BKW
Product data sheet
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60 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 15 June 2016
NX138BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 June 2016
© NXP Semiconductors N.V. 2016. All rights reserved
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