SO T3 23 NX138BKW 60 V, N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 210 mA - 2.1 3.5 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 200 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 1 cm . Scan or click this QR code to view the latest information for this product NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 SC-70 (SOT323) S 017aaa255 6. Ordering information Table 3. Ordering information Type number NX138BKW Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code [1] NX138BKW B8% [1] NX138BKW Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 210 mA VGS = 10 V; Tamb = 100 °C [1] - 135 mA VGS = 10 V; Tsp = 25 °C - 330 mA - 855 mA [2] - 266 mW [1] - 321 mW - 1.33 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 210 mA Source-drain diode IS source current NX138BKW Product data sheet Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad [2] for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-023342 1 tp = 10 µs ID (A) 100 µs Limit RDSon = VDS/ID 10-1 1 ms 10-2 10-3 10-1 DC; Tsp = 25 °C 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 100 ms 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air NX138BKW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2016 Min Typ Max Unit [1] - 410 470 K/W [2] - 340 390 K/W © NXP Semiconductors N.V. 2016. All rights reserved 4 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] [2] Conditions Min Typ Max Unit - 75 85 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . aaa-023343 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 0.33 102 0.20 0.25 0.10 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-023344 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 102 0.33 0.20 0.25 0.10 0.05 10 10-3 0.02 0.01 0 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX138BKW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.5 1 1.5 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 0.3 µA VGS = -5 V; VDS = 0 V; Tj = 25 °C - - -0.3 µA VGS = 10 V; ID = 200 mA; Tj = 25 °C - 2.1 3.5 Ω VGS = 10 V; ID = 200 mA; Tj = 150 °C - 4.3 7.2 Ω VGS = 5 V; ID = 170 mA; Tj = 25 °C - 2.2 3.8 Ω VGS = 2.5 V; ID = 75 mA; Tj = 25 °C - 2.6 5 Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 0.7 - S RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge VDS = 30 V; ID = 200 mA; VGS = 10 V; - 0.5 0.7 nC QGS gate-source charge Tj = 25 °C - 0.12 - nC QGD gate-drain charge - 0.12 - nC Ciss input capacitance VDS = 30 V; f = 1 MHz; VGS = 0 V; - 20 - pF Coss output capacitance Tj = 25 °C - 3.1 - pF Crss reverse transfer capacitance - 2 - pF td(on) turn-on delay time VDS = 30 V; ID = 200 mA; VGS = 10 V; - 8 12 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 8 - ns td(off) turn-off delay time - 13 20 ns tf fall time - 5 - ns - 0.9 1.2 V Source-drain diode VSD source-drain voltage NX138BKW Product data sheet IS = 200 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-023345 0.8 VGS = 10 V ID (A) 2.5 V 4.5 V aaa-023346 10-3 3.5 V ID (A) 0.6 min 10-4 typ max 2.2 V 0.4 2.0 V 0.2 0 Fig. 6. 10-5 1.8 V 0 1 2 3 4 VDS (V) 10-6 5 0 Tj = 25 °C VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values Fig. 7. Tj = 25 °C aaa-023347 8 1.8 V RDSon (Ω) 2.0 V 2.2 V 0.5 1 6 6 4 Tj = 150 °C 4 3 2 3V 4.5 V VGS = 10 V 0 0.2 0.4 0.6 ID (A) 1 0 0.8 Product data sheet 0 5 VGS (V) 10 ID = 0.2 A Drain-source on-state resistance as a function of drain current; typical values NX138BKW Tj = 25 °C 2 Tj = 25 °C Fig. 8. 2 aaa-023348 5 0 VGS (V) Sub-threshold drain current as a function of gate-source voltage 8 RDSon (Ω) 7 2.5 V 1.5 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-023349 0.6 aaa-023350 2.5 a ID (A) 2 0.4 1.5 1 0.2 Tj = 150 °C 0 0 Tj = 25 °C 1 2 0.5 3 VGS (V) 0 -60 4 VDS > ID x RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 120 Tj (°C) 180 aaa-023352 102 VGS(th) (V) C (pF) max 1.5 60 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-023351 2 0 Ciss 1 typ 0.5 min 10 Coss Crss 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 250 μA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature NX138BKW 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET aaa-023353 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 2 0 QGS2 0 0.2 0.4 0.6 QGS QGD QG(tot) 003aaa508 Fig. 15. MOSFET transistor: Gate charge waveform definitions 0.8 1 QG (nC) VDS = 30 V; ID = 0.2 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-023354 0.2 IS (A) 0.1 Tj = 150 ºC 0 0 0.4 Tj = 25 ºC 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition NX138BKW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X HE y v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig. 18. Package outline SC-70 (SOT323) NX138BKW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET 13. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig. 19. Reflow soldering footprint for SC-70 (SOT323) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 20. Wave soldering footprint for SC-70 (SOT323) NX138BKW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 15 NX138BKW NXP Semiconductors 60 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX138BKW v.1 20160615 Product data sheet - - NX138BKW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 June 2016 NX138BKW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2016 © NXP Semiconductors N.V. 2016. All rights reserved 15 / 15