SO 8 PHC2300 Complementary enhancement mode MOS transistors Rev. 05 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency applications due to fast switching characteristics 1.3 Applications High-speed line drivers Relay drivers Line transformer drivers Universal line interface in telephone sets 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C; N-channel - - 300 Tj ≥ 25 °C; Tj ≤ 150 °C; P-channel - - -300 V ID Ptot drain current total power dissipation V Tsp = 80 °C; N-channel [1] - - 340 Tsp = 80 °C; P-channel [1] - - -235 mA Tsp = 80 °C [2] - - 1.6 W VGS = 10 V; ID = 170 mA; Tj = 25 °C; N-channel - - 6 Ω VGS = -10 V; ID = -115 mA; Tj = 25 °C; P-channel - - 17 Ω mA Static characteristics RDSon drain-source on-state resistance PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit - 674 - pC - 1385 - pC Dynamic characteristics QGD gate-drain charge VGS = -10 V; ID = -115 mA; VDS = -50 V; Tj = 25 °C; P-channel VGS = 10 V; ID = 170 mA; VDS = 50 V; Tj = 25 °C; N-channel [1] Solder point temperature is the temperature at the soldering point of the drain leads. [2] Maximum permissible dissipation per MOS transistor (both devices may thus be loaded up to 1.6 W at the same time). 2. Pinning information Table 2. Pin Pinning information Symbol Description 1 S1 source1 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 Simplified outline Graphic symbol 8 5 D1 D1 D2 D2 1 4 S1 G1 S2 G2 SOT96-1 (SO8) sym114 3. Ordering information Table 3. Ordering information Type number PHC2300 PHC2300 Product data sheet Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C; N-channel - 300 V Tj ≥ 25 °C; Tj ≤ 150 °C; P-channel - -300 V VGS gate-source voltage ID drain current peak drain current IDM total power dissipation Ptot -20 20 V Tsp = 80 °C; N-channel [1] - 340 mA Tsp = 80 °C; P-channel [1] - -235 mA Tsp = 25 °C; pulsed; N-channel [2] - 1.4 A Tsp = 25 °C; pulsed; P-channel [2] - -0.9 A Tsp = 80 °C [3] - 1.6 W Tamb = 25 °C [4] - 1.8 W Tamb = 25 °C [5] - 0.9 W Tamb = 25 °C [6] - 1.2 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C [1] Solder point temperature is the temperature at the soldering point of the drain leads. [2] Pulse width and duty cycle limited by maximum junction temperature. [3] Maximum permissible dissipation per MOS transistor (both devices may thus be loaded up to 1.6 W at the same time). [4] Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth(a-tp) (ambient to tie-point) of 27.5 K/W. [5] Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth(a-tp) (ambient to tie-point) of 90 K/W. [6] Maximum permissible dissipation if only one MOS transistor dissipates. Value based on a printed-circuit board with an Rth(a-tp) (ambient to tie-point) of 90 K/W. mda235 2 mda240 10 Ptot ID (W) 1.6 (A) 1 (1) 1.2 10−1 0.8 δ= P tp T 10−2 DC 0.4 t tp T 10−3 0 0 40 80 120 Ts (°C) 160 1 10 102 VDS (V) 103 δ = 0.01; Tsp = 80 °C. (1) RDSon limitation. Fig 1. Power derating curve PHC2300 Product data sheet Fig 2. SOAR; N-channel All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors mgl245 −10 ID (A) −1 (1) −10−1 δ= P −10−2 tp T DC t tp T −10−3 −10 −1 −102 VDS (V) −103 δ = 0.01; Tsp = 80 °C. (1) RDSon limitation. Fig 3. SOAR; P-channel 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Min Typ Max Unit - - 43 K/W mda244 102 (1) (2) (3) Rth js (K/W) (4) 10 (5) (6) (7) (8) 1 δ= P (9) tp T (10) t tp T 10−1 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) (1) δ = 1.00. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig 4. Transient thermal resistance from junction to soldering point as a function of pulse time for N- and P-channel; typical values PHC2300 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = -10 µA; VGS = 0 V; Tj = 25 °C; P-channel -300 - - V ID = 10 µA; VGS = 0 V; Tj = 25 °C; N-channel 300 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; N-channel 0.8 - 2 V ID = -1 mA; VDS = VGS; Tj = 25 °C; P-channel -0.8 - -2 V VDS = -240 V; VGS = 0 V; Tj = 25 °C; P-channel - - -100 nA VDS = 240 V; VGS = 0 V; Tj = 25 °C; N-channel - - 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C; N-channel - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C; N-channel - - 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C; P-channel - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C; P-channel - - 100 nA VGS = 10 V; ID = 170 mA; Tj = 25 °C; N-channel - - 6 Ω VGS = -10 V; ID = -115 mA; Tj = 25 °C; P-channel - - 17 Ω ID = 170 mA; VDS = 50 V; VGS = 10 V; Tj = 25 °C; N-channel - 6240 - pC ID = -115 mA; VDS = -50 V; VGS = -10 V; Tj = 25 °C; P-channel - 2137 - pC ID = 170 mA; VDS = 50 V; VGS = 10 V; Tj = 25 °C; N-channel - 226 - pC ID = -115 mA; VDS = -50 V; VGS = -10 V; Tj = 25 °C; P-channel - 68 - pC - 674 - pC ID = 170 mA; VDS = 50 V; VGS = 10 V; Tj = 25 °C; N-channel - 1385 - pC VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; N-channel - 102 - pF VDS = -50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; P-channel - 45 - pF VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; N-channel - 15 - pF VDS = -50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; P-channel - 15 - pF Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon drain-source breakdown voltage gate-source threshold voltage drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) QGS QGD Ciss Coss total gate charge gate-source charge gate-drain charge input capacitance output capacitance PHC2300 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Crss reverse transfer capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; N-channel - 7.3 - pF VDS = -50 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; P-channel - 3 - pF VDS = 50 V; VGS = 10 V; ID = 170 mA; Tj = 25 °C; N-channel - 7 12 ns VDS = -50 V; VGS = -10 V; ID = -115 mA; Tj = 25 °C; P-channel - 4 10 ns VDS = 50 V; VGS = 10 V; Tj = 25 °C; ID = 170 mA; N-channel - 53 65 ns VDS = -50 V; VGS = -10 V; Tj = 25 °C; ID = -115 mA; P-channel - 25 35 ns turn-on time ton toff turn-off time mld841 1200 VGS = 10 V ID 5V VGS = −10 V ID (mA) 4V (mA) mbh441 −800 3.5 V −600 3V −4.5 V 800 −4.0 V −400 400 −3.5 V −3.0 V 2.5 V −200 −2.5 V −2.0 V 2V 0 0 0 4 8 VDS (V) 12 0 Tamb = 25 °C; tp = 80 μs; δ = 0. Fig 5. Product data sheet −4 −6 −8 −10 −12 VDS (V) Tamb = 25 °C; tp = 80 μs; δ = 0. Output characteristics: drain current as a function of drain-source voltage; N-channel; typical values PHC2300 −2 Fig 6. Output characteristics: drain current as a function of drain-source voltage; P-channel; typical values All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors mld842 1200 mbh440 −800 ID (mA) ID (mA) −600 800 −400 400 −200 0 0 0 2 4 6 8 10 VGS (V) VDS = 10 V; Tamb = 25 °C; tp = 80 μs; δ = 0. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; N-channel; typical values mld843 200 C (pF) −2 0 −4 −6 −8 −10 VGS (V) VDS = -10 V; Tamb = 25 °C; tp = 80 μs; δ = 0. Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; P-channel; typical values mld844 12 50 VDS VGS (V) (V) 37.5 150 8 Ciss 25 100 (1) (2) 4 12.5 50 Coss Crss 0 0 0 5 10 15 25 20 VDS (V) 0 1560 3120 0 4680 6240 QG (pC) VDS = 50 V; ID = 170 mA; Tamb = 25 °C. (1) VDS (2) VGS Fig 9. Input, output and reverse transfer capacitances as a function of drain-source voltage; N-channel; typical values PHC2300 Product data sheet Fig 10. Gate-source voltage and drain-source voltage as a function of gate charge; N-channel typical values All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors mld845 12 50 VDS VGS (V) (V) mda239 −0.5 ISD (A) −0.4 37.5 8 −0.3 25 (1) (2) −0.2 4 12.5 0 1605 2140 QG (pC) 0 0 535 −0.1 1070 0 −0.4 0 −0.8 VSD (V) −1.2 VDS = -50 V; ID = -115 mA; Tamb = 25 °C. (1) VDS (2) VGS Fig 11. Gate-source voltage and drain-source voltage as a function of gate charge; P-channel typical values mld846 102 Fig 12. Source current as a function of source-drain voltage; P-channel typical values mda233 102 (1) (2) (3) (4) (5) (1) (2) (3) RDSon RDSon (4) (Ω) (Ω) (5) 10 1 10 0 2 4 6 8 10 VGS (V) 1 0 −2 −4 −6 −8 −10 VGS (V) VDS ≥ ID X RDSon; Tamb = 25 °C; tp = 300 μs; δ = 0. VDS ≥ ID X RDSon; Tamb = 25 °C; tp = 300 μs; δ = 0. (1) ID = 10 mA. (1) ID = -10 mA. (2) ID = 20 mA. (2) ID = -20 mA. (3) ID = 50 mA. (3) ID = -50 mA. (4) ID = 100 mA. (4) ID = -100 mA. (5) ID = 200 mA. (5) ID = -200 mA. Fig 13. Drain-source on-state resistance as a function of gate-source voltage; N-channel typical values PHC2300 Product data sheet Fig 14. Drain-source on-state resistance as a function of gate-source voltage; P-channel typical values All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors mda238 0.5 mld847 1.25 ISD k (A) 0.4 1 0.3 0.75 0.2 0.5 0.1 0.25 0 −50 0 0 0.2 0.4 0.6 1 0.8 VSD (V) 0 50 100 150 Tj (°C) VDS = VGS; ID = 1 mA. Fig 15. Source-drain current as a function of source-drain diode voltage; N-channel; typical values mbh438 1.4 Fig 16. Temperature coefficient of gate-source threshold voltage as a function temperature; N-channel; typical values mda236 160 C (pF) k 1.2 120 1.0 80 Ciss 0.8 40 Coss Crss 0.6 −75 −25 0 25 75 125 175 Tj (°C) 0 −5 −10 −15 −20 −25 VDS (V) VDS = VGS; ID = -1 mA. Fig 17. Temperature coefficient of gate-source threshold voltage as a function temperature; P-channel; typical values PHC2300 Product data sheet Fig 18. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 inches 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.05 0.01 0.01 0.004 0.028 0.012 0.244 0.039 0.028 0.041 0.228 0.016 0.024 θ 8o o 0 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 Fig 19. Package outline SOT96-1 (SO8) PHC2300 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PHC2300 v.5 20110224 Product data sheet - PHC2300 v.4 - PHC2300 v.3 Modifications: PHC2300 v.4 PHC2300 Product data sheet • Various changes to content. 20101216 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PHC2300 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 05 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 PHC2300 NXP Semiconductors Complementary enhancement mode MOS transistors 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 February 2011 Document identifier: PHC2300