PHILIPS PHC2300

DISCRETE SEMICONDUCTORS
DATA SHEET
PHC2300
Complementary enhancement
mode MOS transistors
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC13b
1997 Oct 24
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
FEATURES
PHC2300
PINNING - SOT96-1 (SO8)
• High-speed switching
PIN
• No secondary breakdown.
SYMBOL
DESCRIPTION
1
s1
source 1
2
g1
gate 1
APPLICATIONS
3
s2
source 2
• Universal line interface in telephone sets
4
g2
gate 2
• Relay, high-speed and line transformer drivers.
5
d2
drain 2
6
d2
drain 2
DESCRIPTION
7
d1
drain 1
One N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
8
d1
drain 1
d1 d1
handbook, halfpage
CAUTION
8
5
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
4
MAM118
s1
d2 d2
g1
s2
g2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per FET
VDS
drain-source voltage (DC)
N-channel
−
300
V
P-channel
−
−300
V
−
±20
V
VGS
gate-source voltage (DC)
VGSth
gate-source threshold voltage
ID
RDSon
Ptot
1997 Oct 24
V
N-channel
VDS = VGS; ID = 1 mA
0.8
2
V
P-channel
VDS = VGS ; ID = −1 mA
−0.8
−2
V
N-channel
−
340
mA
P-channel
−
−235
mA
drain current (DC)
Ts = 80 °C
drain-source on-state resistance
N-channel
VGS = 10 V; ID = 170 mA
−
8
Ω
P-channel
VGS = −10 V; ID = −115 mA
−
17
Ω
Ts = 80 °C
−
1.6
W
total power dissipation
2
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per FET
VDS
drain-source voltage (DC)
N-channel
−
300
V
P-channel
−
−300
V
−
±20
V
N-channel
−
340
mA
P-channel
−
−235
mA
−
1.4
A
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ts = 80 °C; note 1
note 2
N-channel
−
−0.9
A
Ts = 80 °C; note 3
−
1.6
W
Tamb = 25 °C; note 4
−
1.8
W
Tamb = 25 °C; note 5
−
0.9
W
Tamb = 25 °C; note 6
−
1.2
W
P-channel
Ptot
total power dissipation
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
Notes
1. Ts is the temperature at the soldering point of the drain leads.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per MOS transistor. (So both devices may be loaded up to 1.6 W at the same time).
4. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient
to tie-point) of 27.5 K/W.
5. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp (ambient
to tie-point) of 90 K/W.
6. Maximum permissible dissipation if only one MOS transistor dissipates. Value based on a printed-circuit board with
an Rth a-tp (ambient to tie-point) of 90 K/W.
1997 Oct 24
3
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MDA235
2
MDA240
10
handbook, halfpage
handbook, halfpage
Ptot
ID
(A)
(W)
1.6
1
(1)
1.2
10−1
0.8
tp
δ= T
P
10−2
DC
0.4
t
tp
10−3
0
0
40
80
120
Ts (°C)
T
160
10
1
102
VDS (V)
δ = 0.01; Ts = 80 °C.
(1) RDSon limitation.
Fig.2 Power derating curve.
Fig.3 SOAR; N-channel.
MGL245
−10
handbook, halfpage
ID
(A)
−1
(1)
−10−1
tp
δ= T
P
−10−2
DC
t
tp
T
−10−3
−1
−10
−102
VDS (V)
−103
δ = 0.01; Ts = 80 °C.
(1) RDSon limitation.
Fig.4 SOAR; P-channel.
1997 Oct 24
4
103
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
43
K/W
thermal resistance from junction to soldering point
Rth j-s
MDA244
102
handbook, full pagewidth
(1)
(2)
Rth js
(K/W)
(3)
(4)
10
(5)
(6)
(7)
(8)
1
δ=
P
(9)
tp
T
(10)
t
tp
T
10−1
10−6
10−5
10−4
10−3
(1) δ = 1.00.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
Fig.5
10−2
10−1
1
tp (s)
(5) δ = 0.2.
(10) δ = 0.
Transient thermal resistance from junction to soldering point as a function of pulse time
for N- and P-channels; typical values.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Per FET
V(BR)DSS
VGSth
IDSS
1997 Oct 24
drain-source breakdown voltage
N-channel
VGS = 0; ID = 10 µA
300
−
−
V
P-channel
VGS = 0; ID = −10 µA
−300
−
−
V
gate-source threshold voltage
N-channel
VGS = VDS ; ID = 1 mA
0.8
−
2
V
P-channel
VGS = VDS ; ID = −1 mA
−0.8
−
−2
V
N-channel
VGS = 0; VDS = 240 V
−
−
100
nA
P-channel
VGS = 0; VDS = −240 V
−
−
−100
nA
drain-source leakage current
5
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
SYMBOL
IGSS
RDSon
Ciss
Coss
Crss
QG
QGS
QGD
PARAMETER
PHC2300
MIN.
TYP.
MAX. UNIT
N-channel
−
−
±100
nA
P-channel
−
−
±100
nA
gate leakage current
CONDITIONS
VGS = ±20 V; VDS = 0
drain-source on-state resistance
N-channel
VGS = 10 V; ID = 170 mA
−
−
8
Ω
P-channel
VGS = −10 V; ID = − 115 mA
−
−
17
Ω
N-channel
VGS = 0; VDS = 50 V; f = 1 MHz
−
57
−
pF
P-channel
VGS = 0; VDS = −50 V; f = 1 MHz
−
45
−
pF
N-channel
VGS = 0; VDS = 50 V; f = 1 MHz
−
15
−
pF
P-channel
VGS = 0; VDS = −50 V; f = 1 MHz
−
15
−
pF
N-channel
VGS = 0; VDS = 50 V; f = 1 MHz
−
2.6
−
pF
P-channel
VGS = 0; VDS = −50 V; f = 1 MHz
−
3
−
pF
N-channel
VGS = 10 V; VDS = 50 V; ID = 170 mA
−
2097
−
pC
P-channel
VGS = −10 V; VDS = −50 V; ID = −115 mA −
2137
−
pC
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
N-channel
VGS = 10 V; VDS = 50 V; ID = 170 mA
−
75
−
pC
P-channel
VGS = −10 V; VDS = −50 V; ID = −115 mA −
68
−
pC
gate-drain charge
N-channel
VGS = 10 V; VDS = 50 V; ID = 170 mA
−
527
−
pC
P-channel
VGS = −10 V; VDS = −50 V; ID = −115 mA −
674
−
pC
Switching times
ton
toff
1997 Oct 24
turn-on time
N-channel
VGS = 0 to 10 V; VDD = 50 V;
ID = 170 mA
−
2.5
10
ns
P-channel
VGS = 0 to −10 V; VDD = −50 V;
ID = −115 mA
−
4
10
ns
N-channel
VGS = 10 to 0 V; VDD = 50 V;
ID = 170 mA
−
17
30
ns
P-channel
VGS = −10 to 0 V; VDD = −50 V;
ID = −115 mA
−
25
35
ns
turn-off time
6
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
handbook, full pagewidth
PHC2300
VDD
90 %
Vin
RL
10 %
0
Vout
90 %
Vout
Vin
10 %
0
td(off)
td(on)
tf
MAM274
tr
ton
toff
Fig.6 Switching times test circuit with input and output waveforms; N-channel.
0
handbook, full pagewidth
−VDD
10 %
Vin
90 %
RL
Vout
0
10 %
10 %
Vout
Vin
90 %
90 %
td(off)
td(on)
tr
ton
tf
toff
MGD391
Fig.7 Switching times test circuit with input and output waveforms; P-channel.
1997 Oct 24
7
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MRC237
1.2
ID
(A)
MBH441
−800
handbook, halfpage
handbook, halfpage
VGS = 10 V
P = 1.0 W
1
VGS = −10 V
ID
(mA)
5.0 V
4.0 V
0.8
3.5 V
0.6
3.0 V
−600
−4.5 V
−4.0 V
−400
−3.5 V
−3.0 V
0.4
2.5 V
0.2
0
−200
−2.5 V
2.0 V
0
4
8
VDS (V)
−2.0 V
0
12
0
−2
−4
−6
Tamb = 25 °C; tp = 80 µs; δ = 0.
Tamb = 25 °C; tp = 80 µs; δ = 0.
Fig.8
Fig.9
Output characteristics; N-channel
typical values.
MRC243
1
−10
−12
VDS (V)
Output characteristics; P-channel
typical values.
MBH440
−800
handbook, halfpage
ID
−8
handbook, halfpage
ID
(mA)
(A)
0.8
−600
0.6
−400
0.4
0.2
0
−200
0
2
4
6
8
10
VGS (V)
0
0
−2
−4
−6
−8
−10
VGS (V)
VDS = 10 V; Tamb = 25 °C; tp = 80 µs; δ = 0.
VDS = −10 V; Tamb = 25 °C; tp = 80 µs; δ = 0.
Fig.10 Transfer characteristic; N-channel
typical values.
Fig.11 Transfer characteristic; P-channel
typical values.
1997 Oct 24
8
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MDA237
160
MDA236
160
handbook, halfpage
handbook, halfpage
C
(pF)
C
(pF)
120
120
80
80
Ciss
Ciss
40
40
Coss
Coss
Crss
Crss
0
0
0
5
10
15
20
25
VDS (V)
−5
0
−10
−15
−20
−25
VDS (V)
f = 1 MHz; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.12 Capacitance as a function of drain-source
voltage; N-channel typical values.
Fig.13 Capacitance as a function of drain-source
voltage; P-channel typical values.
MDA242
12
VGS
50
handbook, halfpage
V GS
V DS
(V )
MDA243
12
50
handbook, halfpage
VDS
( V)
( V)
10
(V)
10
40
40
35
35
8
8
30
6
30
6
25
(1 )
25
(1)
(2)
(2)
20
4
20
4
15
10
2
15
10
2
5
5
0
0
Q G ( p C)
QG (pC)
VDD = 50 V; ID = 170 mA; Tamb = 25 °C.
(1) VDS.
(2) VGS.
VDD = −50 V; ID = −115 mA; Tamb = 25 °C.
(1) VDS.
(2) VGS.
Fig.14 Gate-source voltage and drain-source voltage
as a function of total gate charge;
N-channel typical values.
1997 Oct 24
1639
1746
1853
1960
2067
1319
1426
1533
1105
1212
545
664
779
890
999
0
83
193
308
426
0
1955
2063
1634
1741
1849
1311
1418
1526
1097
1203
549
664
773
881
989
0
87
195
311
430
0
Fig.15 Gate-source voltage and drain-source
voltage as a function of total gate charge;
P-channel typical values.
9
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MDA238
0.5
handbook, halfpage
ISD
(A)
0.4
(A)
−0.4
0.3
−0.3
0.2
−0.2
0.1
−0.1
0
0
MDA239
−0.5
ISD
handbook, halfpage
0.2
0.4
0.6
0
0.8
1
VSD (V)
−0.4
0
−0.8
VSD (V)
−1.2
VGD = 0.
VGD = 0.
Fig.16 Source-drain current as a function of
source-drain diode forward voltage;
N-channel typical values.
Fig.17 Source-drain current as a function of
source-drain diode forward voltage;
P-channel typical values.
MDA234
102
handbook, halfpage
RDSon
(Ω)
(1)
(2)
(3)
(4)
(5)
RDSon
(Ω)
10
1
MDA233
102
handbook, halfpage
(1)
(2)
(3)
(4)
(5)
10
0
2
4
VDS ≥ ID × RDSon; Tamb = 25 °C;
tp = 300 µs; δ = 0.
(1) ID = 10 mA.
(2) ID = 20 mA.
6
8
1
10
VGS (V)
−2
−4
VDS ≥ ID × RDSon; Tamb = 25 °C;
tp = 300 µs; δ = 0.
(3) ID = 50 mA.
(4) ID = 100 mA.
(5) ID = 200 mA.
(1) ID = −10 mA.
(2) ID = −20 mA.
Fig.18 Drain-source on-state resistance as a
function of gate-source voltage; N-channel
typical values.
1997 Oct 24
0
−6
−8
−10
VGS (V)
(3) ID = −50 mA.
(4) ID = −100 mA.
(5) ID = −200 mA.
Fig.19 Drain-source on-state resistance as a
function of gate-source voltage; P-channel
typical values.
10
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MBH438
MRC236
1.25
1.4
handbook, halfpage
handbook, halfpage
k
k
1
1.2
0.75
1.0
0.5
0.8
0.25
0
–50
0
50
100
0.6
−75
150
Tj ( o C)
−25
25
75
125
175
Tj (°C)
V GSth at T j
k = ------------------------------------V GSth at 25°C
V GSth at T j
k = ------------------------------------V GSth at 25°C
VGSth at VDS = VGS; ID = 1 mA.
VGSth at VDS = VGS; ID = −1 mA.
Fig.20 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; N-channel, typical values.
Fig.21 Temperature coefficient of gate-source
threshold voltage as function of junction
temperature; P-channel typical values.
1997 Oct 24
11
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MBH439
MRC235
2.5
2.4
handbook, halfpage
handbook, halfpage
k
k
(1)
2
2.0
(2)
(1)
1.5
1.6
1
1.2
0.5
0.8
0
–50
0
50
100
o
Tj ( C)
0.4
−75
150
−25
25
75
(2)
125
175
Tj (°C)
R DSon at T j
k = ---------------------------------------R DSon at 25 °C
R DSon at T j
k = ---------------------------------------R DSon at 25 °C
(1) RDSon at VGS = 10 V; ID = 250 mA.
(2) RDSon at VGS = 2.4 V; ID = 20 mA.
(1) RDSon at VGS = -4.5 V; ID = −80 mA.
(2) RDSon at VGS = -2.8 V; ID = −50 mA.
Fig.22 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; N-channel typical values.
Fig.23 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; P-channel typical values.
1997 Oct 24
12
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
1
L
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.244
0.039 0.028
0.050
0.041
0.228
0.016 0.024
inches
0.010 0.057
0.069
0.004 0.049
0.01
0.01
0.028
0.004
0.012
θ
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03S
MS-012AA
1997 Oct 24
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
97-05-22
13
o
8
0o
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 24
14
Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
NOTES
1997 Oct 24
15
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Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/1200/02/pp16
Date of release: 1997 Oct 24
Document order number:
9397 750 02783