PMGD780SN Dual N-channel μTrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface-mounted package Standard level threshold voltage Low on-state resistance Footprint 40 % smaller than SOT23 Fast switching Dual device 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data VDS ≤ 60 V Ptot ≤ 0.41 W ID ≤ 0.49 A RDSon ≤ 920 mΩ 2. Pinning information Table 1. Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description 1 source1 (S1) 2 gate1 (G1) 3 drain2 (D2) 4 source2 (S2) 5 gate2 (G2) 6 drain1 (D1) Simplified outline Graphic symbol 6 5 4 D1 1 2 3 SOT363 (SC-88) S1 D2 G1 S2 G2 msd901 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number PMGD780SN Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 60 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage drain current ID - ±20 V Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 [1] - 0.49 A Tsp = 100 °C; VGS = 10 V; Figure 2 [1] - 0.31 A [1] - 0.99 A - 0.41 W IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 μs; Figure 3 Ptot total power dissipation Tsp = 25 °C; Figure 1 Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode IS ISM [1] source current Tsp = 25 °C [1] - 0.34 A peak source current Tsp = 25 °C; pulsed; tp ≤ 10 μs [1] - 0.69 A Single device conducting. PMGD780SN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 03aa17 120 Pder (%) 03aa25 120 Ider (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 Tsp (°C) 200 Tsp (°C) P tot Pder = ----------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) Fig 1. 150 D ( 25 C ) Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 03an22 10 ID (A) tp = 10 μ s Limit RDSon = VDS / ID 1 100 μ s 10-1 1 ms DC 10 ms 100 ms 10-2 10-3 10-1 1 102 10 VDS (V) Tsp = 25 °C; IDM is single pulse; VGS = 10 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMGD780SN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter thermal resistance from junction to solder point Rth(j-sp) Conditions Min Typ Max Unit Figure 4 - - 300 K/W 03an28 103 Zth(j-sp) (K/W) δ = 0.5 102 0.2 0.1 0.05 0.02 10 single pulse P δ= tp T t tp T 1 10-4 Fig 4. 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to solder point as a function of pulse duration PMGD780SN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 - - V Tj = −55 °C 55 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage ID = 250 μA; VGS = 0 V ID = 0.25 mA; VDS = VGS; Figure 9 drain leakage current Tj = 25 °C 1 2 2.5 V Tj = 150 °C 0.6 − − V Tj = −55 °C − − 3.5 V Tj = 25 °C - 0.05 1 μA Tj = 150 °C - - 100 μA - 10 100 nA Tj = 25 °C - 780 920 mΩ Tj = 150 °C - 1445 1700 mΩ - 1100 1400 mΩ VDS = 60 V; VGS = 0 V IGSS gate leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 0.3 A; Figure 7 and 8 VGS = 4.5 V; ID = 0.075 A; Figure 7 and 8 Dynamic characteristics QG(tot) total gate charge - 1.05 - nC QGS gate-source charge ID = 1 A; VDD = 30 V; VGS = 10 V; Figure 13 - 0.2 - nC QGD gate-drain charge - 0.22 - nC Ciss input capacitance - 23 - pF VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11 Coss output capacitance - 5 - pF Crss reverse transfer capacitance - 3.5 - pF td(on) turn-on delay time - 2 - ns tr rise time - 4 - ns td(off) turn-off delay time - 5 - ns tf fall time - 2.2 - ns - 0.83 1.2 V VDD = 30 V; RL = 30 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD source-drain voltage PMGD780SN_2 Product data sheet IS = 0.3 A; VGS = 0 V; Figure 12 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 03an88 2 ID (A) 03an90 1 10 ID (A) 6 0.8 1.5 5 0.6 4.5 1 0.4 4 Tj = 150 °C 0.5 25 °C 0.2 3.5 VGS (V) = 3 0 0 0 1 2 0 3 VDS (V) Tj = 25 °C Fig 5. 1 2 3 4 VGS (V) 5 Tj = 25 °C and 150 °C; VDS > ID × RDSon Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. 03an89 3 Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aa28 2.4 4 VGS (V) = 3.5 a RDSon (Ω) 4.5 1.8 2 1.2 5 6 10 1 0.6 0 −60 0 0 0.2 0.4 0.6 0.8 ID (A) 1 Tj = 25 °C Fig 7. Product data sheet 60 120 180 Tj (°C) RDSon a = ----------------------------R DSon ( 25 °C ) Drain-source on-state resistance as a function of drain current; typical values PMGD780SN_2 0 Fig 8. Normalized drain-source on-state resistance as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 03aa34 2.4 VGS(th) (V) 03an32 10-3 ID (A) 10-4 typ 1.8 10-5 1.2 min min 10-6 typ 0.6 1E-7 0 −60 1E-8 0 60 120 180 0 1 1.5 2 VGS (V) 2.5 Tj = 25 °C; VDS = 5 V ID = 0.25 mA; VDS = VGS Fig 9. 0.5 Tj (°C) Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 03an92 102 C (pF) Ciss 10 Coss Crss 1 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMGD780SN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 03an91 1 03an93 10 VGS = 0 V IS (A) ID = 1 A Tj = 25 °C VDS = 30 V VGS (V) 0.8 8 0.6 6 0.4 4 150 °C Tj = 25 °C 0.2 2 0 0 0 0.3 0.6 0.9 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V Product data sheet 0.3 0.6 0.9 QG (nC) 1.2 ID = 1 A; VDD = 30 V Fig 12. Source current as a function of source-drain voltage; typical values PMGD780SN_2 0 Fig 13. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 7. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 14. Package outline SOT363 (SC-88) PMGD780SN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 8. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) occupied area Dimensions in mm 1.8 sot363_fr Fig 15. Reflow soldering footprint SOT363 (SC-88) PMGD780SN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PMGD780SN_2 20100419 Product data sheet - PMGD780SN_1 Modifications: PMGD780SN_1 PMGD780SN_2 Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. Table 5 “Characteristics”: added VGS(th) maximum value at condition Tj = 25 °C Section 10 “Legal information”: updated 20040211 Product data - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 - © NXP B.V. 2010. All rights reserved. 11 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 10.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or PMGD780SN_2 Product data sheet malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMGD780SN_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 PMGD780SN NXP Semiconductors Dual N-channel μTrenchMOS standard level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 April 2010 Document identifier: PMGD780SN_2