Data Sheet

PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
10 August 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
• High efficiency due to low switching and conduction losses
• Improved dynamic avalanche performance
• Suitable for standard level gate drive
1.3 Applications
• DC-to-DC converters
• Load switching
• Motor control
• Server power supplies
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
68
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
170
W
Tj
junction temperature
-55
-
175
°C
-
19.4
25
mΩ
-
10.8
13.9
mΩ
-
17
-
nC
[1]
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
[2]
Fig. 13
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 15; Fig. 14
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PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
-
59
-
nC
-
-
128
mJ
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
[1]
[2]
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω
Continuous current is limited by package
Measured 3 mm from package.
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Graphic symbol
D
mb
G
mbb076
S
1 2 3
TO-220AB (SOT78)
3. Ordering information
Table 3.
Ordering information
Type number
PSMN013-100PS
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
4. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN013-100PS
PSMN013-100PS
PSMN013-100PS
Product data sheet
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PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
100
V
VDGR
drain-gate voltage
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
-
100
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1
[1]
-
47
A
VGS = 10 V; Tmb = 25 °C; Fig. 1
[1]
-
68
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
272
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
170
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
-
68
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
272
A
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
-
128
mJ
[1]
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1]
PSMN013-100PS
Product data sheet
Vsup ≤ 100 V; unclamped; RGS = 50 Ω
Continuous current is limited by package
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PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
003aac512
80
ID
(A)
03aa16
120
Pder
(%)
60
80
40
40
20
0
Fig. 1.
0
50
100
150
Tmb (°C)
0
200
Continuous drain current as a function of
mounting base temperature
Fig. 2.
0
50
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
003aae168
103
ID
(A)
Limit RDSon = VDS / ID
2
10
tp =10 µs
100 µs
10
DC
1
1 ms
10 ms
100 ms
10- 1
1
Fig. 3.
102
10
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.5
0.9
K/W
PSMN013-100PS
Product data sheet
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4 / 14
PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
vertical in free air
Min
Typ
Max
Unit
-
60
-
K/W
003a a d575
1
Zth (j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2
0.02
P
δ=
s ingle s hot
10-3
tp
10-4
1e -6
Fig. 4.
tp
T
10-5
10-4
10-3
10-2
10-1
t
T
1
10
tp (s )
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
90
-
-
V
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
100
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
-
-
V
2
3
4
V
-
-
4.6
V
VDS = 100 V; VGS = 0 V; Tj = 125 °C
-
-
100
µA
VDS = 100 V; VGS = 0 V; Tj = 25 °C
-
0.06
2
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 15 A; Tj = 100 °C;
-
19.4
25
mΩ
Static characteristics
V(BR)DSS
VGS(th)
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
PSMN013-100PS
Product data sheet
Fig. 12
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PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; ID = 15 A; Tj = 175 °C;
-
29.5
38.9
mΩ
-
10.8
13.9
mΩ
f = 1 MHz
-
1
-
Ω
ID = 25 A; VDS = 50 V; VGS = 10 V;
-
59
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
47.6
-
nC
ID = 25 A; VDS = 50 V; VGS = 10 V;
-
13.8
-
nC
-
9.2
-
nC
-
4.6
-
nC
-
17
-
nC
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
[1]
Fig. 13
RG
internal gate
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
Fig. 14; Fig. 15
QGS
gate-source charge
Fig. 14; Fig. 15
QGS(th)
pre-threshold gatesource charge
QGS(th-pl)
post-threshold gatesource charge
QGD
gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15; Fig. 14
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; Fig. 15; Fig. 14
-
4.4
-
V
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
-
3195
-
pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
221
-
pF
Crss
reverse transfer
capacitance
-
136
-
pF
td(on)
turn-on delay time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
-
20.7
-
ns
tr
rise time
RG(ext) = 4.7 Ω; Tj = 25 °C
-
25
-
ns
td(off)
turn-off delay time
-
52.5
-
ns
tf
fall time
-
24
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.85
1.2
V
trr
reverse recovery time
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
-
52
-
ns
Qr
recovered charge
VDS = 50 V
-
109
-
nC
[1]
PSMN013-100PS
Product data sheet
Measured 3 mm from package.
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PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
003a a d577
200
20
ID
(A)
C is s
C
(pF)
6
160
003a a d580
5000
10
4000
5.5
120
3000
5
C rs s
80
0
Fig. 5.
2000
4.5
40
VGS (V) = 4
0
1
2
3
V DS (V)
1000
4
Output characteristics: drain current as a
Fig. 6.
function of drain-source voltage; typical values
003a a d585
45
0
2
4
6
8
10
VGS (V)
Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003a a d586
150
gfs
(S )
120
RDS on
(mΩ)
35
90
25
60
15
5
Fig. 7.
30
4
8
12
16
VGS (V)
0
20
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN013-100PS
Product data sheet
Fig. 8.
0
30
90
12 0
150
I D (A)
Forward transconductance as a function of
drain current; typical values
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7 / 14
PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
003a a d582
100
003aad280
5
ID
(A)
VGS(th)
(V)
80
4
60
3
max
typ
Tj = 1 75 °C
2
40
1
20
0
Fig. 9.
min
25 °C
0
2
4
VGS (V)
0
- 60
6
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
ID
(A)
min
10- 2
typ
60
120
Tj (°C)
180
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
03aa35
10- 1
0
003aad774
3.2
a
max
2.4
10- 3
1.6
10- 4
0.8
10- 5
10- 6
0
2
4
VGS (V)
0
-60
6
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
PSMN013-100PS
Product data sheet
0
60
120
Tj (°C)
180
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
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PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
003aad578
30
RDSon
(mΩ)
003a a d583
10
VGS
(V)
VGS (V) = 4.5
8
25
V DS = 50V
6
20
4
5
15
10
0
20
40
2
20
10
6
60
ID (A)
0
80
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
0
15
30
45
003aad581
Ciss
C
(pF)
ID
60
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
104
VDS
QG (nC)
103
VGS(pl)
Coss
VGS(th)
VGS
QGS1
QGS
Crss
102
QGS2
QGD
QG(tot)
003aaa508
10
10- 2
Fig. 15. Gate charge waveform definitions
10- 1
1
10
VDS (V)
102
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN013-100PS
Product data sheet
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9 / 14
PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
003a a d584
100
IS
(A)
80
60
40
Tj = 175 °C
20
0
25 °C
0
0 .3
0.6
0.9
VS D (V)
1.2
Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN013-100PS
Product data sheet
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10 / 14
PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
8. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
e
c
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig. 18. TO-220AB (SOT78)
PSMN013-100PS
Product data sheet
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11 / 14
PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed
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or completeness of such information and shall have no liability for the
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PSMN013-100PS
Product data sheet
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
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between the translated and English versions.
9.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN013-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2012
© NXP B.V. 2012. All rights reserved
13 / 14
PSMN013-100PS
NXP Semiconductors
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
10. Contents
1
1.1
1.2
1.3
1.4
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
2
Pinning information ............................................... 2
3
Ordering information ............................................. 2
4
Marking ................................................................... 2
5
Limiting values .......................................................3
6
Thermal characteristics .........................................4
7
Characteristics ....................................................... 5
8
Package outline ................................................... 11
9
9.1
9.2
9.3
9.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 August 2012
PSMN013-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 August 2012
© NXP B.V. 2012. All rights reserved
14 / 14