Composite Transistors XP03316 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) ■ Basic Part Number 1.3±0.1 2.0±0.1 • UNR2216 × UNR2116 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 150 mW Collector current Tr2 Overall Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Publication date: August 2003 SJJ00281AED 0 to 0.1 Parameter Tr1 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) EIAJ: SC-88A 4: Collector (Tr2) 5: Collector (Tr1) Base (Tr2) SMini5-G1 Package Marking Symbol: AM Internal Connection 5 4 Tr1 Tr2 1 2 3 1 XP03316 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA hFE VCE = 10 V, IC = 5 mA 460 0.25 V Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ Max V 0.1 160 4.9 −30% µA V 0.2 VCB = 10 V, IE = −2 mA, f = 200 MHz Unit V IC = 10 mA, IB = 0.3 mA Output voltage high-level Input resistance Min 4.7 +30% 150 V kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.01 mA hFE VCE = −10 V, IC = −5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ Unit V − 0.1 160 µA 460 − 0.25 V − 0.2 V −4.9 −30% VCB = −10 V, IE = 1 mA, f = 200 MHz Max V IC = −10 mA, IB = − 0.3 mA Output voltage high-level Input resistance Min V 4.7 80 +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00281AED XP03316 Characteristics charts of Tr1 VCE(sat) IC 0.8 mA 0.7 mA 0.6 mA 0.5 mA Collector current IC (mA) 120 100 0.4 mA 80 0.3 mA 60 0.2 mA 40 0.1 mA 20 0 Ta = 25°C 0 2 4 6 8 10 12 1 IC / IB = 10 0.1 Ta = 85°C 25°C –25°C 1 20 150 100 50 100 1 10 30 Collector-base voltage VCB (V) 40 VO = 5 V Ta = 25°C 10 1 0 1 2 3 4 Input voltage VIN (V) SJJ00281AED 1 000 VIN IO 10 100 0.1 100 Collector current IC (mA) Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Output current IO (mA) 10 –25°C 200 IO VIN 1 000 f = 1 MHz Ta = 25°C 0 25°C 250 Collector current IC (mA) Cob VCB 1 10 VCE = 10V Ta = 85°C 300 0 0.01 0.1 Collector-emitter voltage VCE (V) 10 hFE IC 350 Forward current transfer ratio hFE 0.9 mA IB = 1.0 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 140 5 VO = 0.2 V Ta = 25°C 1 0.1 0.1 1 10 100 Output current IO (mA) 3 XP03316 Characteristics charts of Tr2 VCE(sat) IC – 0.9 mA – 0.8 mA – 0.7 mA Collector current IC (mA) –120 –100 – 0.6 mA – 0.5 mA –80 – 0.4 mA –60 – 0.3 mA –40 – 0.2 mA –20 – 0.1 mA 0 Ta = 25°C 0 –2 –4 –6 –8 –10 –12 –10 IC / IB = 10 –1 25°C –25°C – 0.01 – 0.1 –1 30 Collector-base voltage VCB (V) 4 –25°C 150 100 50 0 – 0.1 –100 –1 –10 40 –1 0 – 0.5 –1.0 –1.5 Input voltage VIN (V) SJJ00281AED –1 000 VIN IO –10 –10 – 0.1 –100 Collector current IC (mA) Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Output current IO (mA) 20 25°C 200 VO = –5 V Ta = 25°C f = 1 MHz Ta = 25°C 10 250 IO VIN –100 0 –10 VCE = –10V Ta = 85°C Collector current IC (mA) Cob VCB 1 Ta = 85°C – 0.1 Collector-emitter voltage VCE (V) 10 hFE IC 300 Forward current transfer ratio hFE IB = –1.0 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE –140 –2.0 VO = – 0.2 V Ta = 25°C –1 – 0.1 – 0.1 –1 –10 Output current IO (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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