PANASONIC XP03316

Composite Transistors
XP03316
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
(0.425)
For switching/digital circuits
0.20±0.05
5
0.12+0.05
–0.02
4
5˚
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
0.2±0.1
1.25±0.10
2.1±0.1
■ Features
1
3
2
(0.65) (0.65)
■ Basic Part Number
1.3±0.1
2.0±0.1
• UNR2216 × UNR2116
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
V
IC
100
mA
Collector-base voltage
(Emitter open)
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
150
mW
Collector current
Tr2
Overall
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Publication date: August 2003
SJJ00281AED
0 to 0.1
Parameter
Tr1
0.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.9+0.2
–0.1
10˚
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
SMini5-G1 Package
Marking Symbol: AM
Internal Connection
5
4
Tr1
Tr2
1
2
3
1
XP03316
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.01
mA
hFE
VCE = 10 V, IC = 5 mA
460

0.25
V
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
R1
Transition frequency
fT
Typ
Max
V
0.1
160
4.9
−30%
µA
V
0.2
VCB = 10 V, IE = −2 mA, f = 200 MHz
Unit
V
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
Input resistance
Min
4.7
+30%
150
V
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.01
mA
hFE
VCE = −10 V, IC = −5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
R1
Transition frequency
fT
Typ
Unit
V
− 0.1
160
µA
460

− 0.25
V
− 0.2
V
−4.9
−30%
VCB = −10 V, IE = 1 mA, f = 200 MHz
Max
V
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Input resistance
Min
V
4.7
80
+30%
kΩ
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00281AED
XP03316
Characteristics charts of Tr1
VCE(sat)  IC
0.8 mA
0.7 mA
0.6 mA
0.5 mA
Collector current IC (mA)
120
100
0.4 mA
80
0.3 mA
60
0.2 mA
40
0.1 mA
20
0
Ta = 25°C
0
2
4
6
8
10
12
1
IC / IB = 10
0.1
Ta = 85°C
25°C
–25°C
1
20
150
100
50
100
1
10
30
Collector-base voltage VCB (V)
40
VO = 5 V
Ta = 25°C
10
1
0
1
2
3
4
Input voltage VIN (V)
SJJ00281AED
1 000
VIN  IO
10
100
0.1
100
Collector current IC (mA)
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Output current IO (mA)
10
–25°C
200
IO  VIN
1 000
f = 1 MHz
Ta = 25°C
0
25°C
250
Collector current IC (mA)
Cob  VCB
1
10
VCE = 10V
Ta = 85°C
300
0
0.01
0.1
Collector-emitter voltage VCE (V)
10
hFE  IC
350
Forward current transfer ratio hFE
0.9 mA
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
140
5
VO = 0.2 V
Ta = 25°C
1
0.1
0.1
1
10
100
Output current IO (mA)
3
XP03316
Characteristics charts of Tr2
VCE(sat)  IC
– 0.9 mA
– 0.8 mA
– 0.7 mA
Collector current IC (mA)
–120
–100
– 0.6 mA
– 0.5 mA
–80
– 0.4 mA
–60
– 0.3 mA
–40
– 0.2 mA
–20
– 0.1 mA
0
Ta = 25°C
0
–2
–4
–6
–8
–10
–12
–10
IC / IB = 10
–1
25°C
–25°C
– 0.01
– 0.1
–1
30
Collector-base voltage VCB (V)
4
–25°C
150
100
50
0
– 0.1
–100
–1
–10
40
–1
0
– 0.5
–1.0
–1.5
Input voltage VIN (V)
SJJ00281AED
–1 000
VIN  IO
–10
–10
– 0.1
–100
Collector current IC (mA)
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Output current IO (mA)
20
25°C
200
VO = –5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
10
250
IO  VIN
–100
0
–10
VCE = –10V
Ta = 85°C
Collector current IC (mA)
Cob  VCB
1
Ta = 85°C
– 0.1
Collector-emitter voltage VCE (V)
10
hFE  IC
300
Forward current transfer ratio hFE
IB = –1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
–140
–2.0
VO = – 0.2 V
Ta = 25°C
–1
– 0.1
– 0.1
–1
–10
Output current IO (mA)
–100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL