Composite Transistors NP043A2 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 4 1 2 0 to 0.02 0.10 5 1.00±0.04 • SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half • Maximum package height (0.4 mm) contributes to develop thinner equipments 0.80±0.05 6 3 0.10 ■ Features (0.35) (0.35) 1.00±0.05 ■ Basic Part Number Display at No.1 lead 0.37+0.03 -0.02 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 80 mA Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −80 mA Total power dissipation PT 125 mW Collector current Tr2 Overall (0.10) • UNR31A2 + UNR32A2 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 7T Internal Connection ■ Electrical Characteristics Ta = 25°C ± 3°C 6 5 4 R1 22 kΩ Tr1 R2 22 kΩ R2 22 kΩ R1 22 kΩ Tr2 1 2 3 Min Typ Max • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions V V VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ µA 60 IC = 10 mA, IB = 0.3 mA Output voltage high level Unit 0.25 4.9 V V 0.2 V Input resistance R1 −30% 22 +30% kΩ Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: April 2004 SJJ00285AED 1 NP043A2 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.2 mA hFE VCE = −10 V, IC = −5 mA Forward current transfer ratio Collector-emitter saturation voltage Conditions Min Typ Unit V V Output voltage high level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ µA 60 IC = −10 mA, IB = − 0.3 mA VCE(sat) Max − 0.25 V − 0.2 V −4.9 V Input resistance R1 −30% 22 +30% kΩ Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency VCB = −10 V, IE = 1 mA, f = 200 MHz fT 80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C) Characteristics charts of Tr1 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.9 mA IB = 1.0 mA 60 0.4 mA 0.3 mA 50 0.2 mA 40 30 20 0.1 mA 10 Ta = 25°C 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 2 10 hFE IC 300 IC/IB = 10 VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 70 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 70 1 Ta = 85°C 0.1 −25°C 25°C 0.01 1 10 Collector current IC (mA) SJJ00285AED 100 Ta = 85°C 250 25°C 200 150 100 −25°C 50 0 0.1 1 10 Collector current IC (mA) 100 NP043A2 IO VIN 100 1 0.1 0 5 10 15 20 25 30 35 10 1 0.1 40 VIN IO 10 VO = 5 V Ta = 25°C Input voltage VIN (V) f = 1 MHz Ta = 25°C Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 0 0.5 1 Collector-base voltage VCB (V) 1.5 2 2.5 3 3.5 VO = 0.2 V Ta = 25°C 1 0.1 0.1 4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of Tr2 IC VCE VCE(sat) IC Collector current IC (mA) −60 − 0.9 mA IB = −1.0 mA − 0.8 mA −50 − 0.7 mA − 0.6 mA −40 − 0.5 mA − 0.4 mA −30 −20 − 0.3 mA −10 − 0.2 mA − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 −10 IC/IB = 10 −1 Ta = 85°C − 0.1 −25°C 25°C − 0.01 −1 15 20 25 100 50 30 35 Collector-base voltage VCB (V) 40 −1 0 −2 −4 −6 −8 Input voltage VIN (V) SJJ00285AED −100 VIN IO Ta = 25°C −10 − 0.1 −10 Collector current IC (mA) −100 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob Output current IO (mA) 10 −25°C 150 IO VIN −100 1 5 25°C Collector current IC (mA) f = 1 MHz Ta = 25°C 0 200 0 −1 −10 Cob VCB 0.1 VCE = −10 V Ta = 85°C Collector-emitter voltage VCE (V) 10 hFE IC 250 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) −70 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −1 −10 −100 Output current IO (mA) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP