PANASONIC NP0H3A3

Composite Transistors
NP0H3A3
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
Unit: mm
For digital circuits
0.12+0.03
-0.02
4
0.80±0.05
1
2
3
0.10
• SSS-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
• Maximum package height (0.4 mm) contributes to develop thinner
equipments
0 to 0.02
0.10
5
■ Features
1.00±0.04
6
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
0.37+0.03
-0.02
• UNR11A3 × UNR12A3
(0.10)
■ Basic Part Number
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
IC
−80
mA
Collector-base voltage
(Emitter open)
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
Collector current
Tr2
Overall
1: Emitter (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 3C
Internal Connection
6
5
V
Tr2
Tr1
Collector current
IC
80
mA
Total power dissipation *
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1
4
2
3
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
Publication date: August 2003
SJJ00282AED
1
NP0H3A3
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.1
mA
hFE
VCE = −10 V, IC = −5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
Min
Typ
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
Unit
V
V
− 0.1
µA

80
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Max
− 0.25
V
− 0.2
V
−4.9
V
Input resistance
R1
−30%
47
+30%
kΩ
Resistance ratio
R1 / R 2
0.8
1.0
1.2

Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.1
mA
hFE
VCE = 10 V, IC = 5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
Min
Typ
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
Unit
V
V
0.1
µA

80
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
Max
0.25
4.9
V
V
0.2
V
Input resistance
R1
−30%
47
+30%
kΩ
Resistance ratio
R1 / R 2
0.8
1.0
1.2

Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
140
120
100
80
60
40
20
0
0
40
80
120
Ambient temperature Ta (°C)
2
SJJ00282AED
NP0H3A3
Characteristics charts of Tr1
Collector current IC (mA)
−9 mA −8 mA −7 mA
IB = −10 mA
−6 mA
−5 mA
−60
−4 mA
−3 mA
−40
−2 mA
−20
0
−1 mA
−2
0
−4
−6
−8
−10
−12
250
−1
Ta = 75°C
− 0.1
− 0.01
− 0.1
0
−8
−16
−24
−25°C
150
100
50
IC / IB = 10
−1
−10
0
−1
−100
−100
Collector-base voltage VCB (V)
−40
−100
Input voltage VIN (V)
VO = −5 V
Ta = 25°C
0
−4
−8
Input voltage VIN (V)
SJJ00282AED
−100
VIN  IO
−10
−1
−10
Collector current IC (mA)
IO  VIN
−32
25°C
200
Collector current IC (mA)
Output current IO (mA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
1
−25°C
25°C
Cob  VCB
f = 1 MHz
Ta = 25°C
VCE = −10 V
Ta = 75°C
Collector-emitter voltage VCE (V)
10
hFE  IC
−10
Forward current transfer ratio hFE
Ta = 25°C
−80
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−12
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.1
−1
−10
−100
Output current IO (mA)
3
NP0H3A3
Characteristics charts of Tr2
Collector current IC (mA)
7 mA
6 mA
5 mA
4 mA
60
3 mA
40
2 mA
20
1 mA
Ta = 25°C
0
0
2
4
6
8
10
12
VCE = 10 V
1
0.1
Ta = 75°C
25°C
1
24
32
Collector-base voltage VCB (V)
4
25°C
150
−25°C
100
50
0
100
1
40
VO = 5 V
Ta = 25°C
0.5
1.0
1.5
Input voltage VIN (V)
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2.0
VO = 0.2 V
Ta = 25°C
10
1
0
100
VIN  IO
100
1
0.1
10
Collector current IC (mA)
Input voltage VIN (V)
f = 1 MHz
Ta = 25°C
16
200
IO  VIN
10
Output current IO (mA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
8
10
Ta = 75°C
Collector current IC (mA)
10
0
−25°C
IC / IB = 10
0.01
0.1
Collector-emitter voltage VCE (V)
1
hFE  IC
250
10
Forward current transfer ratio hFE
IB = 10 mA 9 mA 8 mA
80
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
1
10
Output current IO (mA)
100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL