Composite Transistors NP0H3A3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For digital circuits 0.12+0.03 -0.02 4 0.80±0.05 1 2 3 0.10 • SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half • Maximum package height (0.4 mm) contributes to develop thinner equipments 0 to 0.02 0.10 5 ■ Features 1.00±0.04 6 (0.35) (0.35) 1.00±0.05 Display at No.1 lead 0.37+0.03 -0.02 • UNR11A3 × UNR12A3 (0.10) ■ Basic Part Number ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V IC −80 mA Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 Collector current Tr2 Overall 1: Emitter (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 3C Internal Connection 6 5 V Tr2 Tr1 Collector current IC 80 mA Total power dissipation * PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 4 2 3 Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm Publication date: August 2003 SJJ00282AED 1 NP0H3A3 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.1 mA hFE VCE = −10 V, IC = −5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −3.5 V, RL = 1 kΩ Unit V V − 0.1 µA 80 IC = −10 mA, IB = − 0.3 mA Output voltage high-level Max − 0.25 V − 0.2 V −4.9 V Input resistance R1 −30% 47 +30% kΩ Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 1 kΩ Unit V V 0.1 µA 80 IC = 10 mA, IB = 0.3 mA Output voltage high-level Max 0.25 4.9 V V 0.2 V Input resistance R1 −30% 47 +30% kΩ Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 140 120 100 80 60 40 20 0 0 40 80 120 Ambient temperature Ta (°C) 2 SJJ00282AED NP0H3A3 Characteristics charts of Tr1 Collector current IC (mA) −9 mA −8 mA −7 mA IB = −10 mA −6 mA −5 mA −60 −4 mA −3 mA −40 −2 mA −20 0 −1 mA −2 0 −4 −6 −8 −10 −12 250 −1 Ta = 75°C − 0.1 − 0.01 − 0.1 0 −8 −16 −24 −25°C 150 100 50 IC / IB = 10 −1 −10 0 −1 −100 −100 Collector-base voltage VCB (V) −40 −100 Input voltage VIN (V) VO = −5 V Ta = 25°C 0 −4 −8 Input voltage VIN (V) SJJ00282AED −100 VIN IO −10 −1 −10 Collector current IC (mA) IO VIN −32 25°C 200 Collector current IC (mA) Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 1 −25°C 25°C Cob VCB f = 1 MHz Ta = 25°C VCE = −10 V Ta = 75°C Collector-emitter voltage VCE (V) 10 hFE IC −10 Forward current transfer ratio hFE Ta = 25°C −80 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE −12 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.1 −1 −10 −100 Output current IO (mA) 3 NP0H3A3 Characteristics charts of Tr2 Collector current IC (mA) 7 mA 6 mA 5 mA 4 mA 60 3 mA 40 2 mA 20 1 mA Ta = 25°C 0 0 2 4 6 8 10 12 VCE = 10 V 1 0.1 Ta = 75°C 25°C 1 24 32 Collector-base voltage VCB (V) 4 25°C 150 −25°C 100 50 0 100 1 40 VO = 5 V Ta = 25°C 0.5 1.0 1.5 Input voltage VIN (V) SJJ00282AED 2.0 VO = 0.2 V Ta = 25°C 10 1 0 100 VIN IO 100 1 0.1 10 Collector current IC (mA) Input voltage VIN (V) f = 1 MHz Ta = 25°C 16 200 IO VIN 10 Output current IO (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 8 10 Ta = 75°C Collector current IC (mA) 10 0 −25°C IC / IB = 10 0.01 0.1 Collector-emitter voltage VCE (V) 1 hFE IC 250 10 Forward current transfer ratio hFE IB = 10 mA 9 mA 8 mA 80 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 1 10 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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