Composite Transistors XP04315 (XP4315) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 1 0.2±0.1 6 ■ Features Unit: mm (0.425) For switching/digital circuits 3 2 (0.65) (0.65) ■ Basic Part Number 1.3±0.1 2.0±0.1 • UNR2215 (UN2215) + UNR2115 (UN2115) Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 150 mW Collector current Tr2 Overall Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 0 to 0.1 Parameter Tr1 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: CB Internal Connection 6 5 Tr1 1 4 Tr2 2 3 Note) The part number in the parenthesis shows conventional part number. Publication date: June 2003 SJJ00180BED 1 XP04315 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.01 mA hFE VCE = 10 V, IC = 5 mA 460 0.25 V Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ Max V 0.1 160 4.9 −30% µA V 0.2 VCB = 10 V, IE = −2 mA, f = 200 MHz Unit V IC = 10 mA, IB = 0.3 mA Output voltage high-level Input resistance Min 10 +30% 150 V kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.01 mA hFE VCE = −10 V, IC = −5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Transition frequency fT Typ Unit V − 0.1 160 µA 460 − 0.25 V − 0.2 V −4.9 −30% VCB = −10 V, IE = 1 mA, f = 200 MHz Max V IC = −10 mA, IB = − 0.3 mA Output voltage high-level Input resistance Min V 10 80 +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00180BED XP04315 Characteristics charts of Tr1 VCE(sat) IC Collector current IC (mA) 120 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 1 10 Ta = 75°C 200 25°C −25°C 100 0 100 1 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) IO VIN 104 Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 300 Collector current IC (mA) Cob VCB 5 VCE = 10 V −25°C 0.01 0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJJ00180BED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 3 XP04315 Characteristics charts of Tr2 IC VCE VCE(sat) IC IB = −1.0 mA Collector current IC (mA) −120 Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 −2 0 −4 −6 −8 −10 −12 Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 −1 −10 −104 200 4 3 2 25°C −25°C 100 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) VIN IO VO = −5 V Ta = 25˚C −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C IO VIN −102 −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 300 Collector current IC (mA) Cob VCB 5 VCE = −10 V −25°C − 0.01 −0.1 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE −160 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJJ00180BED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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