TO -2 20F PSMN7R6-60XS N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) 16 December 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 2. Features and benefits • • • High efficiency due to low switching and conduction losses Isolated TO220F package Suitable for standard level gate drive 3. Applications • • • AC-to-DC power supply equipment Synchronous rectification Motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 60 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2; Fig. 3 - - 51.5 A Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 46 W Tj junction temperature -55 - 175 °C - 5.9 7.8 mΩ - 10.6 - nC - 38.7 - nC Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 14; Fig. 10 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 30 V; Fig. 16; Fig. 15 QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 30 V; Fig. 15; Fig. 16 Scan or click this QR code to view the latest information for this product PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) Symbol Parameter Conditions Min Typ Max Unit - - 191.5 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] VGS = 10 V; Tj(init) = 25 °C; ID = 51.5 A; [1] Vsup ≤ 60 V; RGS = 50 Ω; unclamped; Fig. 4 Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb Simplified outline Graphic symbol D mb G mounting base; isolated mbb076 S 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package PSMN7R6-60XS Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 60 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage -20 20 V Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 46 W ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 2 - 36.4 A VGS = 10 V; Tmb = 25 °C; Fig. 2; Fig. 3 - 51.5 A PSMN7R6-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) Symbol Parameter Conditions Min Max Unit IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 206 A Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C Source-drain diode IS source current Tmb = 25 °C - 38.7 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 206 A - 191.5 mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 51.5 A; [1] Vsup ≤ 60 V; RGS = 50 Ω; unclamped; Fig. 4 [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. 03aa16 120 ID (A) Pder (%) aaa-016213 60 50 40 80 30 20 40 10 0 Fig. 1. 0 50 100 150 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature PSMN7R6-60XS Product data sheet 0 200 Fig. 2. 0 25 75 100 125 150 175 Tmb (°C) 200 Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 16 December 2014 50 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) ID (A) aaa-016211 103 Limit RDSon = VDS / ID tp = 10 us 102 100 us 10 DC 1 ms 10 ms 100 ms 1 10-1 10-1 Fig. 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage IAL (A) aaa-016212 102 (1) 10 (2) 1 10-3 Fig. 4. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 3.01 3.23 K/W Rth(j-a) thermal resistance from junction to ambient vertical in free air - 55 - K/W PSMN7R6-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) aaa-016210 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 0.02 P single shot 10-2 δ= tp 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 tp T t T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Cisol isolation capacitance f = 1 MHz - 10 - pF Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal waveform; clean and dust free - - 2500 V Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V - - 4.6 V 2 3 4 V 10. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics V(BR)DSS VGS(th) Fig. 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 11 VGS(th) IDSS IGSS gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA VDS = 60 V; VGS = 0 V; Tj = 125 °C - - 100 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA gate leakage current PSMN7R6-60XS Product data sheet Fig. 12; Fig. 11 All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) Symbol RDSon Parameter drain-source on-state resistance Conditions Min Typ Max Unit VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; - 13.3 18 mΩ - 5.9 7.8 mΩ f = 1 MHz - 0.98 - Ω Fig. 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 14; Fig. 10 RG gate resistance Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 30 V; VGS = 10 V; - 38.7 - nC QGS gate-source charge Fig. 15; Fig. 16 - 12.9 - nC QGS(th) pre-threshold gatesource charge - 6.9 - nC QGS(th-pl) post-threshold gatesource charge - 6 - nC QGD gate-drain charge - 10.6 - nC ID = 25 A; VDS = 30 V; VGS = 10 V; Fig. 16; Fig. 15 VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 30 V; Fig. 15; Fig. 16 - 5.6 - V Ciss input capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; - 2651 - pF - 342 - pF - 183 - pF Tj = 25 °C; Fig. 17; Fig. 9 Coss output capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; Fig. 17 Crss reverse transfer capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 19 - ns tr rise time RG(ext) = 4.7 Ω - 21 - ns td(off) turn-off delay time - 37 - ns tf fall time - 13 - ns td(on) Tj = 25 °C; Fig. 17; Fig. 9 Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18 - 0.86 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; - 40.4 - ns recovered charge VDS = 30 V - 56 - nC Qr PSMN7R6-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aad663 100 6.0 15 ID (A) 80 gfs 5.5 10 8.0 003aad669 160 (S) 120 60 80 5.0 40 40 20 0 Fig. 6. VGS (V) = 4.5 0 0.5 1 1.5 VDS (V) 0 2 Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values 003aad665 100 0 20 40 60 80 ID 003aad664 Ciss C (pF) 80 100 Forward transconductance as a function of drain current; typical values 4000 (A) ID (A) 3000 60 Crss 2000 40 0 Fig. 8. Tj = 25 °C Tj = 175 °C 20 0 2 4 VGS (V) 1000 0 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values PSMN7R6-60XS Product data sheet Fig. 9. 0 10 15 VGS (V) 20 Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 16 December 2014 5 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aad666 20 RDSon (mΩ) 16 VGS(th) (V) 12 3 8 2 4 1 0 003aad280 5 4 0 5 10 15 VGS (V) 0 - 60 20 Fig. 10. Drain-source on-state resistance as a function of gate-source voltage; typical values 03aa35 10- 1 ID (A) max typ min 0 60 120 Tj (°C) 180 Fig. 11. Gate-source threshold voltage as a function of junction temperature 003aad696 2.4 a min 10- 2 typ max 2 1.6 10- 3 1.2 10- 4 0.8 10- 5 10- 6 0.4 0 2 4 VGS (V) 0 -60 6 Fig. 12. Sub-threshold drain current as a function of gate-source voltage PSMN7R6-60XS Product data sheet 0 60 120 Tj (°C) 180 Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aad667 30 4.5 5.5 5.0 003aad671 10 VGS (V) RDSon (mΩ) 30 V 8 VDS = 12 V 48 V 20 6 4 6.0 10 2 VGS (V) = 15 0 0 20 40 10.0 60 8.0 80 ID (A) 0 100 Fig. 14. Drain-source on-state resistance as a function of drain current; typical values 0 10 20 30 40 50 QG (nC) Fig. 15. Gate-source voltage as a function of gate charge; typical values 003aad668 104 VDS C (pF) ID Ciss VGS(pl) VGS(th) 103 VGS QGS1 QGS2 QGS Coss QGD QG(tot) Crss 003aaa508 Fig. 16. Gate charge waveform definitions 102 10- 2 10- 1 1 10 VDS (V) 102 Fig. 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PSMN7R6-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) 003aad670 100 IS (A) 80 60 40 Tj = 175 °C 20 0 0 0.3 0.6 Tj = 25 °C 0.9 VSD (V) 1.2 Fig. 18. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN7R6-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) 11. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 19. Package outline TO-220F (SOT186A) PSMN7R6-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 14 PSMN7R6-60XS NXP Semiconductors N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A) In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................4 9 Isolation characteristics ........................................5 10 Characteristics ....................................................... 5 11 Package outline ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 December 2014 PSMN7R6-60XS Product data sheet All information provided in this document is subject to legal disclaimers. 16 December 2014 © NXP Semiconductors N.V. 2014. All rights reserved 14 / 14