VISHAY TP0202

TP0202T
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS Min (V)
–20
rDS(on) Max (W)
VGS(th) (V)
ID (A)
1.4 @ VGS = –10 V
–1.3 to – 3 V
–0.41
3.5 @ VGS = –4.5 V
–1.3 to – 3 V
–0.27
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
High-Side Switching
Low On-Resistance: 0.9 W
Low Threshold: –2.1 V
Fast Switching Speed: 18 ns
Low Input Capacitance: 55 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
TO-236
(SOT-23)
G
Marking Code: P3wll
1
3
S
2
D
P3 = Part Number Code for TP0202T
w = Week Code
ll = Lot Traceability
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
–20
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_
TA= 25_C
TA= 70_C
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= 70_C
V
–0.41
ID
IDM
TA= 25_C
Unit
–0.26
A
–0.75
0.35
PD
0.22
W
RthJA
357
_C/W
TJ, Tstg
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70208
S-04279—Rev. G, 16-Jul-01
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11-1
TP0202T
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Symbol
Test Conditions
Min
Typa
V(BR)DSS
VGS = 0 V, ID = –10 mA
–20
–25
VGS(th)
VDS = VGS, ID = –0.25 mA
–1.3
–2.1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Parameter
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
"100
VDS = –16 V, VGS = 0 V
Drain-Source On-Resistanceb
Forward Transconductanceb
Diode Forward Voltage
rDS(on)
–0.5
–0.75
1.7
3.5
VGS = –10 V, ID = –0.2 A
0.9
1.4
VDS = –10 V, ID = –0.2 A
VSD
IS = –0.25 A, VGS = 0 V
nA
250
600
–0.9
m
mA
A
VGS = –4.5 V, ID = –0.05 A
gfs
V
–1
–10
TJ = 55_C
VDS = –10 V, VGS = –10 V
–3
W
mS
–1.5
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
2700
VDS –16 V, VGS =–10 V, ID ^ –200 mA
500
pC
600
55
VDS = –15 V, VGS = 0 V, f = 1 MHz
50
pF
18
Switchingc
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
tf
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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11-2
VDD = –15 V, RL = 75 W
ID ^ –0.2 A, VGEN = –10 V
RG = 6 W
8
12
20
30
20
35
30
40
ns
VPBP02
Document Number: 70208
S-04279—Rev. G, 16-Jul-01
TP0202T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
–0.8
Transfer Characteristics
–1.0
–5 V
TA = –55_C
–0.8
25_C
VGS = –10 thru –6 V
ID – Drain Current (A)
ID – Drain Current (A)
–0.6
–0.4
–4 V
–0.2
125_C
–0.6
–0.4
–0.2
–3 V
0.0
0
–1
–2
–3
0.0
0.0
–4
VDS – Drain-to-Source Voltage (V)
rDS(on) – On-Resistance ( Ω )
rDS(on) – On-Resistance ( Ω )
ID = –200 mA
3
2
ID = –50 mA
0
0
–4
–8
–12
–16
3
VGS = –4.5 V
2
VGS = –10 V
1
0
0.0
–20
–0.1
–0.2
–0.3
–0.4
–0.5
ID – Drain Current (A)
Capacitance
Gate Charge
–20
ID = –200 mA
160
VGS – Gate-to-Source Voltage (V)
VGS = –0 V
f = 1 MHz
140
C – Capacitance (pF)
–6.0
4
VGS – Gate-to-Source Voltage (V)
180
–4.5
On-Resistance vs. Drain Current
5
4
1
–3.0
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
5
–1.5
120
Coss
100
80
60
Ciss
40
20
–15
VDS = –10 V
–10
VDS = –16 V
–5
Crss
0
0
0
–4
–8
–12
–16
VDS – Drain-to-Source Voltage (V)
Document Number: 70208
S-04279—Rev. G, 16-Jul-01
–20
0
1000
2000
3000
4000
5000
6000
Qg – Total Gate Charge (nC)
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11-3
TP0202T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
–10.000
1.5
1.4
VGS = –10 V
ID = –200 mA
1.2
VGS = –4.5 V
ID = –50 mA
1.1
TA = 150_C
–1.000
IS – Source Current (A)
rDS(on) – On-Resistance (W)
(Normalized)
1.3
1.0
0.9
0.8
–0.100
TA = 25_C
–0.010
0.7
0.6
0.5
–50
–0.001
–25
0
25
50
75
100
125
150
0
–0.4
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8
VSD – Source-to-Drain Voltage (V)
TJ – Junction Temperature (_C)
Threshold Voltage Variance Over Temperature
0.50
VGS(th) – Variance (V)
0.25
ID = –250 mA
0.00
–0.25
–0.50
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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11-4
Document Number: 70208
S-04279—Rev. G, 16-Jul-01