TP0202T Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control High-Side Switching Low On-Resistance: 0.9 W Low Threshold: –2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-236 (SOT-23) G Marking Code: P3wll 1 3 S 2 D P3 = Part Number Code for TP0202T w = Week Code ll = Lot Traceability Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 70_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range TA= 70_C V –0.41 ID IDM TA= 25_C Unit –0.26 A –0.75 0.35 PD 0.22 W RthJA 357 _C/W TJ, Tstg –55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70208 S-04279—Rev. G, 16-Jul-01 www.vishay.com 11-1 TP0202T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = –10 mA –20 –25 VGS(th) VDS = VGS, ID = –0.25 mA –1.3 –2.1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Parameter Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage "100 VDS = –16 V, VGS = 0 V Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage rDS(on) –0.5 –0.75 1.7 3.5 VGS = –10 V, ID = –0.2 A 0.9 1.4 VDS = –10 V, ID = –0.2 A VSD IS = –0.25 A, VGS = 0 V nA 250 600 –0.9 m mA A VGS = –4.5 V, ID = –0.05 A gfs V –1 –10 TJ = 55_C VDS = –10 V, VGS = –10 V –3 W mS –1.5 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2700 VDS –16 V, VGS =–10 V, ID ^ –200 mA 500 pC 600 55 VDS = –15 V, VGS = 0 V, f = 1 MHz 50 pF 18 Switchingc td(on) Turn-On Time Turn-Off Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 VDD = –15 V, RL = 75 W ID ^ –0.2 A, VGEN = –10 V RG = 6 W 8 12 20 30 20 35 30 40 ns VPBP02 Document Number: 70208 S-04279—Rev. G, 16-Jul-01 TP0202T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics –0.8 Transfer Characteristics –1.0 –5 V TA = –55_C –0.8 25_C VGS = –10 thru –6 V ID – Drain Current (A) ID – Drain Current (A) –0.6 –0.4 –4 V –0.2 125_C –0.6 –0.4 –0.2 –3 V 0.0 0 –1 –2 –3 0.0 0.0 –4 VDS – Drain-to-Source Voltage (V) rDS(on) – On-Resistance ( Ω ) rDS(on) – On-Resistance ( Ω ) ID = –200 mA 3 2 ID = –50 mA 0 0 –4 –8 –12 –16 3 VGS = –4.5 V 2 VGS = –10 V 1 0 0.0 –20 –0.1 –0.2 –0.3 –0.4 –0.5 ID – Drain Current (A) Capacitance Gate Charge –20 ID = –200 mA 160 VGS – Gate-to-Source Voltage (V) VGS = –0 V f = 1 MHz 140 C – Capacitance (pF) –6.0 4 VGS – Gate-to-Source Voltage (V) 180 –4.5 On-Resistance vs. Drain Current 5 4 1 –3.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 5 –1.5 120 Coss 100 80 60 Ciss 40 20 –15 VDS = –10 V –10 VDS = –16 V –5 Crss 0 0 0 –4 –8 –12 –16 VDS – Drain-to-Source Voltage (V) Document Number: 70208 S-04279—Rev. G, 16-Jul-01 –20 0 1000 2000 3000 4000 5000 6000 Qg – Total Gate Charge (nC) www.vishay.com 11-3 TP0202T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage –10.000 1.5 1.4 VGS = –10 V ID = –200 mA 1.2 VGS = –4.5 V ID = –50 mA 1.1 TA = 150_C –1.000 IS – Source Current (A) rDS(on) – On-Resistance (W) (Normalized) 1.3 1.0 0.9 0.8 –0.100 TA = 25_C –0.010 0.7 0.6 0.5 –50 –0.001 –25 0 25 50 75 100 125 150 0 –0.4 –0.8 –1.2 –1.6 –2.0 –2.4 –2.8 VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (_C) Threshold Voltage Variance Over Temperature 0.50 VGS(th) – Variance (V) 0.25 ID = –250 mA 0.00 –0.25 –0.50 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70208 S-04279—Rev. G, 16-Jul-01