Download datasheet

Product
Folder
Sample &
Buy
Support &
Community
Tools &
Software
Technical
Documents
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
TPS53632G D-CAP+™ Half-Bridge PWM Controller
Optimized for GaN-based 48-V DC/DC Converter with I2C Interface
1 Features
3 Description
•
The TPS53632G device is a half-bridge PWM
controller with D-CAP+™ architecture that provides
fast transient response, lowest output capacitance
and high efficiency in single stage conversion directly
from 48-V bus. The TPS53632G device supports the
standard I2C Rev 3.0 interface for dynamic control of
the output voltage and current monitor telemetry.
Paired with TI GaN power stages and drivers, the
TPS53632G can switch up to 1 MHz to minimize
magnetic component size and reduce overall board
space. The LMG5200 GaN power stage is designed
specifically for this controller to achieve high
frequency and efficiency as high as 92% with 48-V to
1-V conversion.
1
•
•
•
•
•
•
•
•
•
•
•
Valley Current Mode with Constant ON Time
Control
Lossless Current Sensing Scheme
I2C Interface for VID Control and Telemetry
Programmable I2C Addresses up to Eight Devices
Switching Frequency up to 1 MHz
Digital Current Monitor
7-Bit, DAC Output Range: 0.50-V to 1.52-V with
10-mV Step
Accurate, Adjustable Voltage Positioning or Zero
Slope Load-Line
Selectable, 8-Level Current Limit
Adjustable Output Slew Rate Control
Default Boot Voltage: 1.00 V
Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD
Package
2 Applications
•
•
48-V Point-of-Load (POL) for Data Center and
Telecommunication
Wide Input Range Power Supplies for Industrial
Other features include adjustable control of output
slew rate and voltage positioning. In addition, the
TPS53632G device can be used along with other TI
discrete power MOSFETs and drivers for siliconbased half bridge solutions. The TPS53632G device
is packaged in a space saving, thermally enhanced,
32-pin VQFN package and is rated to operate at a
range between –10°C and 105°C.
Device Information
PART NUMBER
PACKAGE
BODY SIZE
TPS53632G
VQFN
4 mm × 4 mm
WHITESPACE
WHITESPACE
Simplified Schematic
TPS53632G
HS
HB
3
2
PWM_H
2
I C BUS
VIN
1
HI
4
HI
HS
HO
SW
8
GaN Driver
LI
5
HB
LI
VCC
PWM_L
AGND
LO
UCC27523
PGND
INA
OUTA
INB
OUTB
9
6
7
VCC
AGND
LMG5200
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
4
4
5
5
6
7
8
9
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ................................................
Switching Characteristics ..........................................
Typical Characteristics (Half-Bridge Operation)........
7.3
7.4
7.5
7.6
8
Feature Description.................................................
Device Functional Modes........................................
Configuration and Programming .............................
Register Maps ........................................................
11
18
18
19
Applications and Implementation ...................... 21
8.1 Application Information............................................ 21
8.2 Typical Application .................................................. 21
9 Power Supply Recommendations...................... 31
10 Layout................................................................... 31
10.1 Layout Guidelines ................................................. 31
10.2 Layout Example .................................................... 34
11 Device and Documentation Support ................. 34
Detailed Description ............................................ 10
11.1 Trademarks ........................................................... 34
11.2 Electrostatic Discharge Caution ............................ 35
11.3 Glossary ................................................................ 35
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
12 Mechanical, Packaging, and Orderable
Information ........................................................... 35
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (April 2016) to Revision A
•
2
Page
Updated document status from Product Preview to Production Data .................................................................................... 1
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
5 Pin Configuration and Functions
25 DROOP
26 COMP
27 VREF
28 V5A
29 GND
30 NC
31 SCL
32 NC
RSM Package
32-Pin QFN
Top View
SDA 1
24 VFB
VDD 2
23 GFB
22 NC
PGOOD 3
NC 4
21 PU3
TPS53632G
VBUS 16
SLEWA 15
IMON 13
17 CSP1
VINTF 14
18 CSN1
EN 8
OCP-I 12
SKIP 7
B-RAMP 11
19 CSN2
PU 9
20 CSP2
PWM-HI 6
FREQ-P 10
PWM-LO 5
Pin Functions
PIN
NAME
NO.
COMP
26
CSP1
17
CSP2
20
PU3
21
CSN1
18
I/O
I
I
DESCRIPTION
Error amplifier summing node. Resistors between the VREF pin and the COMP pin (RCOMP) and
between the COMP pin and the DROOP pin (RDROOP) set the droop gain.
Positive current sense inputs. Connect to the most positive node of current sense resistor or
inductor DCR sense network. Tie CSP2 or CSP1 (in that order) to a 3.3-V supply to disable the
phase.
Connect to 3.3-V supply.
I
Negative current sense inputs. Connect to the most negative node of current sense resistor or
inductor DCR sense network. CSN1 has a secondary OVP comparator and includes the soft-stop,
pull-down transistor.
CSN2
19
NC
22
–
No connect.
DROOP
25
O
Error amplifier output. A resistor pair between this pin and the VREF pin and between the COMP
pin and this pin sets the droop gain. ADROOP = 1 + RDROOP / RCOMP.
EN
8
I
Enable. 100-ns de-bounce. Regulator enters low-power mode, but retains start-up settings when
brought low.
FREQ-P
10
I
A resistor between this pin and GND sets the per-phase switching frequency. Add a resistor to
VREF to disable dynamic phase add and drop operation.
GFB
23
I
Voltage sense return. Tie to GND on PCB with a 10-Ω resistor to provide feedback when the
microprocessor is not populated.
GND
29
–
Analog circuit reference. Tie this pin to a quiet point on the ground plane.
IMON
13
O
Analog current monitor output. VIMON = ΣVISENSE × (1 + RIMON/ROCP).
OCP-I
12
I/O
Voltage divider to IMON. Resistor ratio sets the IMON gain (see IMON pin). A resistor between this
pin and GND (ROCP) selects 1 of 8 OCP levels (per phase, latched at start-up).
PU
9
I
Pull-up to VREF through 10-kΩ resistor.
PGOOD
3
O
Power good output. Open-drain.
PWM-HI
6
PWM-LO
5
O
PWM controls for the external driver; 5-V logic level. Controller forces signal to the tri-state level
when needed.
NC
4
–
No connect.
–
No connect.
NC
30
32
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
3
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
NO.
RAMP
11
I
Voltage divider to VREF. A resistor to GND sets the ramp setting voltage. The RAMP setting can
be used to override the factory ramp setting.
SCL
31
I
Serial digital clock line.
SDA
1
I/O
Serial digital I/O line.
SKIP
7
O
When high, the driver enters FCCM mode; otherwise, the driver is in DCM mode. Driving the tristate level on this pin puts the drivers into a low power sleep mode.
SLEWA
15
I
The voltage sets the 3 LSBs of the I2C address. The resistance to GND selects 1 of 8 slew rates.
The start-up slew rate (EN transitions high) is SLEWRATE/2. The ADDRESS and SLEWRATE
values are latched at start-up.
VINTF
14
I
Input voltage to interface logic. Voltage level can be between 1.62 V and 3.5 V.
V5A
28
I
5-V power input for analog circuits; connect through resistor to 5-V plane and bypass to GND with
ceramic capacitor with a value of at least 1 µF.
VBUS
16
I
The VBUS pin provides input voltage information to the on-time circuits for both converters.
VDD
2
I
3.3-V digital power input. Bypass this pin to GND with a capacitor with a value of at least 1 µF.
VFB
24
I
Voltage sense line. Tie directly to VOUT sense point of processor. Tie to VOUT on PCB with a 10-Ω
resistor to provide feedback when the microprocessor is not populated. The resistance between
VFB and GFB is > 1 MΩ
27
O
1.7-V, 500-µA reference. Bypass to GND with a 0.22-µF ceramic capacitor.
GND
–
Thermal pad Tie to the ground plane with multiple vias.
VREF
PAD
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
Input voltage
Output voltage
MAX
V5A
–0.3
6.0
VBUS
–0.3
30.0
VDD
–0.3
3.6
COMP, CSP1, CSP2, CSN1, CSN2, DROOP, EN, FREQ-P, IMON, OCP-I, OUSR, RAMP, SCL, SDA, SLEWA, VFB, VINTF, VREF
–0.3
3.6
GFB
–0.2
0.2
PGOOD
–0.3
3.6
PWM-LO, PWM-HI, SKIP
–0.3
6.0
–40
150
°C
150
°C
Operating junction temperature, TJ
Storage temperature, Tstg
(1)
UNIT
V
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
V(ESD)
(1)
(2)
4
Electrostatic
discharge
Human body model (HBM) ESD stress voltage (1)
Charged device model (CDM) ESD stress voltage
(2)
VALUE
UNIT
±2000
V
±750
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
V5A
VBUS
Input voltage
MAX
4.5
5.5
–0.1
28
3.1
3.5
CSN1, CSN2, CSP1, CSP2, IMON, OCP-I, O-USR, RAMP, SCL,
SDA, VFB, VINTF, VREF
–0.1
3.5
COMP, DROOP, EN, FREQ-P, SLEWA
–0.1
5.5
GFB
–0.1
0.1
PGOOD
–0.1
3.5
PWM-LO, PWM-HI, SKIP
–0.1
5.5
–10
105
VDD
VI
MIN
VO
Output voltage
TA
Operating ambient temperature
UNIT
V
V
°C
6.4 Thermal Information
TPS53632G
THERMAL METRIC (1)
RSM (VQFN)
UNITS
32 PINS
RθJA
Junction-to-ambient thermal resistance
37.2
°C/W
RθJCtop
Junction-to-case (top) thermal resistance
31.9
°C/W
RθJB
Junction-to-board thermal resistance
8.1
°C/W
RψJT
Junction-to-top characterization parameter
0.4
°C/W
RψJB
Junction-to-board characterization parameter
7.9
°C/W
RθJCbot
Junction-to-case (bottom) thermal resistance
2.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
5
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
6.5 Electrical Characteristics
over recommended free-air temperature range, VV5A = 5.0 V, VVDD = 3.3 V, VGFB = GND, VVFB = VCORE (unless otherwise
noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY: CURRENTS, UVLO AND POWER-ON-RESET
IV5-3P
V5A supply current
VDAC < VVFB < (VDAC + 100 mV), EN = ‘HI’
3.6
6.0
IVDD-3P
VDD supply current
VDAC < VVFB < (VDAC + 100 mV), EN = ‘HI’, digital
buses idle
0.2
0.8
IV5STBY
V5A standby current
EN = ‘LO’
125
200
IVDDSTBY
VDD standby current
EN = ‘LO’
23
40
IVDD-1P8
VINTF supply current
All conditions, digital buses idle
1.7
5.0
VUVLOH
V5A UVLO ‘OK’ threshold
VVFB < 200 mV, Ramp up, VVDD > 3 V, EN = ’HI’,
switching begins.
4.2
4.4
4.52
VUVLOL
V5A UVLO fault threshold
Ramp down, EN = ’HI’, VVDD > 3 V, VVFB = 100 mV,
restart if 5-V falls below VPOR then rises > VUVLOH,
or EN is toggled w/ VV5A > VUVLOH
4.00
4.2
4.35
VPOR
V5A fault latch reset threshold
Ramp down, EN = ‘HI’, VVDD > 3 V. Can restart if 5V rises to VUVLOH and no other faults present.
1.2
1.9
2.5
V3UVLOH
VDD UVLO ‘OK’ threshold
VVFB < 200 mV. Ramp up, VV5A > 4.5 V, EN = ’HI’,
Switching begins.
2.5
2.8
3.0
V3UVLOL
Fault threshold
Ramp down, EN = ’HI’, V5A > 4.5V, VFB = 100 mV,
restart if 5-V dips below VPOR then rises > VUVLOH
or EN is toggled with 5 V > VUVLOH
2.4
2.6
2.8
VPOR
VDD fault latch
Ramp down, EN = ‘HI’, VV5A > 4.5 V, can restart if
5-V supply rises to VUVLOH and no other faults
present.
1.2
1.9
2.5
VINTFUVLOH
VINTF UVLO OK
Ramp up, EN = ’HI’, VV5A > 4.5 V, VVFB = 100 mV
1.4
1.5
1.6
VINTF UVLO falling
Ramp down, EN = ’HI’, VV5A > 4.5 V, VVFB = 100
mV
1.3
1.4
1.5
VINTFUVLOL
mA
µA
V
REFERENCES: DAC, VREF, VFB DISCHARGE
VVIDSTP
VID step size
Change VID0 HI to LO to HI
VDAC1
VFB tolerance
No load active, 1.36 V ≤ VVFB ≤ 1.52 V, IOUT = 0 A
–9
9
No load medium, 1.0 V ≤ VVFB ≤ 1.35 V, IOUT = 0 A
–8
8
VDAC2
VFB tolerance
VVREF
VREF output
VREF output 4.5 V ≤ VV5A ≤ 5.5 V, IVREF = 0 A
VVREFSRC
VREF output source
0 A ≤ IREF ≤ 500 µA, HP-2
VVREFSNK
VREF output sink
–500 A ≤ IREF ≤ 0 A, HP-2
VVBOOT
Internal VFB initial boot voltage
Initial DAC boot voltage
10
No load medium, 0.5 V ≤ VVFB ≤ 0.99 V, IOUT = 0 A
-7
7
1.66
1.700
–4
-3
0.99
mV
1.74
3
4
1.00
1.01
V
mV
V
RAMP SETTINGS
VRAMP
Compensation ramp
RRAMP = 30 kΩ
60
RRAMP = 56 kΩ
120
RRAMP = 100 kΩ
160
RRAMP ≥ 150 kΩ
40
mV
VOLTAGE SENSE: VFB AND GFB
RVFB
VFB/GFB Input resistance
Not in fault, disable or UVLO, VVFB = VDAC = 1.5 V,
VGFB = 0 V, measure from VFB to GFB
VDELGND
GFB Differential
GND to GFB
1
MΩ
±100
mV
CURRENT MONITOR
VALADC
LRIMON
6
IMON ADC output
IMON linear range
∑∆CS = 0 mV, AIMON = 3.867
00h
∑∆CS = 1.5 mV, AIMON = 3.867
19h
∑∆CS = 7.5 mV, AIMON = 3.867
80h
∑∆CS = 15 mV, AIMON = 3.867
FFh
Each phase, CSPx – CSNx
Submit Documentation Feedback
50
mV
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
Electrical Characteristics (continued)
over recommended free-air temperature range, VV5A = 5.0 V, VVDD = 3.3 V, VGFB = GND, VVFB = VCORE (unless otherwise
noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
CURRENT SENSE: OVER CURRENT PROTECTION, PHASE ADD AND DROP, AND PHASE BALANCE
VOCPP
OCP voltage (valley current
limit)
ROCP-I = 20 kΩ
3.7
7.6
11.4
ROCP-I = 24 kΩ
6.6
10.5
14.1
ROCP-I = 30 kΩ
10.6
14.5
18.0
ROCP-I = 39 kΩ
15.4
19.5
23.0
ROCP-I = 56 kΩ
21.3
25.4
29.0
ROCP-I = 75 kΩ
28.4
32.5
36.2
ROCP-I = 100 kΩ
36.3
40.5
44.0
ROCP-I = 150 kΩ
45.0
49.3
53.0
–500
0.2
500
ICS
CS pin input bias current
CSPx and CSNx
AV-EA
Error amplifier total voltage
gain (1)
VFB to DROOP
IEA_SR
Error amplifier source current
IDROOP, VVFB = VDAC + 50 mV, RCOMP = 1 kΩ
1
IEA_SK
Error amplifier sink current
IDROOP, VVFB = VDAC – 50mV, RCOMP = 1 kΩ
–1
ACSINT
Internal current sense gain
Gain from CSPx – CSNx to PWM comparator,
RSKIP = Open
RSFTSTP
Soft-stop transistor resistance
RVIN
VIN resistance
80
nA
dB
mA
6.0
6.2
Connected to CSN1
100
200
Ω
EN = HI
350
600
kΩ
EN = LOW or STBY
5.8
mV
10
V/V
MΩ
PROTECTION: OVP, UVP, PGOOD AND THERMAL SHUTDOWN
VOVPH
Fixed OVP voltage
VCSN1 > VOVPH for 1 µs
1.60
VPGDH
PGOOD high threshold
Measured at the VFB pin w/r/t VID code, device
latches OFF
1.70
1.80
190
245
VPGDL
PGOOD low threshold
Measured at the VFB pin w/r/t VID code, device
latches OFF
-348
-280
V
mV
PWM AND SKIP OUTPUTS: I/O VOLTAGE AND CURRENT
VP-S_L
PWMx/SKIP - Low
PWMILOAD = ± 1 mA, SKIPILOAD = ± 100 µA
VP-S_H
PWMx/SKIP - High
PWMILOAD = ± 1 mA, SKIPILOAD = ± 100 µA
0.15
0.3
4.2
V
LOGIC INTERFACE: VOLTAGE AND CURRENT
RVRTTL
RVRPG
Pull-down resistance
IVRTTLK
Logic leakage current
VIL
Low-level Input voltage
VIH
High-level Input voltage
IENH
I/O leakage, EN
(1)
VSDA = 0.31
4
VPGOOD= 0.31
VSCL= 1.8 V, VSDA = 1.8 V, VPGOOD = 3.3 V
SCL, SDA; VVINTF = 1.8 V
Leakage current , VEN = 1.8 V
15
36
-2
0.2
50
2
0.6
1.2
24
40
Ω
µA
V
µA
Specified by design. Not production tested.
6.6 Timing Requirements
The TPS53632G requires the ENABLE signal on Pin 8 to go from low to high only after the V5A (5V), the VDD
(3.3V) and the VIN rails have gone high.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
7
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
6.7 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
tOFF(min)
Controller minimum OFF
time
Fixed value
20
tON(min)
Controller minimum ON
time
RCF = 150 kΩ, VVIN = 20 V, VVFB = 0 V
20
TYP
MAX
UNIT
ns
TIMERS: SLEW RATE, ADDR, SLEEP EXIT, ON TIME AND I/O TIMING
tSTART-CB
Cold boot time (1)
VBOOT > 0V , EN = high, CREF = 0.33 µF
1.2
ms
tSTBY-E
Standby exit time (2)
VVID = 1.28 V, RSLEW = 39 kΩ
250
µs
Slew rate setting for VID
change
SLSET
SLSTART (3)
6
RSLEW = 24 kΩ
12
RSLEW = 30 kΩ
18
RSLEW = 39 kΩ
24
RSLEW = 56 kΩ
30
Slew rate setting for start-up EN goes high, RSLEW = 39 kΩ
Address setting 3 LSB of
I2C address
ADDR
RSLEW = 20 kΩ
mV/µs
12
mV/µs
VSLEWA ≤ 0.30 V (Addr = 100 0xxx)
000b
0.75 V ≤ VSLEWA ≤ 0.85 V
011b
1.15 V ≤ VSLEWA ≤ 1.25 V
101b
tPGDDGLTO
PGOOD deglitch time
(over) (4)
1
tPGDDGLTU
PGOOD deglitch time
(under) (5)
31
tON
On time
µs
RCF = 20 kΩ
295
RCF = 24 kΩ, VVIN = 12 V, VVFB = 1 V, fSW =
400 kHz
230
RCF = 39 kΩ, VVIN = 12 V, VVFB = 1 V, fSW =
600 kHz
164
RCF = 75 kΩ, VVIN = 12 V, VVFB = 1 V, fSW =
800 kHz
140
RCF = 150 kΩ, VVIN = 12 V, VVFB = 1 V, fSW =
1 MHz
128
ns
PWM AND SKIP OUTPUTS
tP-S_H-L (3)
PWMx/SKIP H-L transition
time
10% to 90%, both edges
7
20
ns
250
275
µs
PROTECTION: OVP, UVP, PGOOD AND THERMAL SHUTDOWN
tPG2
(1)
(2)
(3)
(4)
(5)
8
PGOOD low
Low state time after EN goes low.
225
Cold boot time is defined as the time from UVLO detection to VOUT ramp.
Standby exit time is defined as the time from EN assertion until PGOOD goes high
Specified by design. Not production tested.
PGOOD deglitch time (over) is defined as the time from when the VFB pin rises above the 250-mV VDAC boundary to when the PGOOD
pin goes low.
PGOOD deglitch time (under) is defined as the time from when the VFB pin falls below the –300-mV VDAC boundary to when the
PGOOD pin goes low.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
6.8 Typical Characteristics (Half-Bridge Operation)
VIN = 48 V
Load = 1 A
VOUT = 1 V
VIN = 48 V
Load = 10 A
Figure 1. Startup
VIN = 48 V
Load transient from 10 A to 40 A
VOUT = 1 V
Figure 2. Switching Waveform
VOUT = 1 V
VIN = 48 V
Load transient from 40 A to 10 A
Figure 3. Load Transient
VOUT = 1 V
Figure 4. Load Transient
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
9
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
7 Detailed Description
7.1 Overview
The TPS53632G device is a DCAP+ mode half-bridge PWM controller optimized for high frequency operation
using GaN switchers. The DAC outputs a reference in accordance with the 7-bit VID code as defined in Table 1.
This DAC sets the output voltage.
In adaptive on-time converters, the controller varies the on-time as a function of input and output voltage to
maintain a nearly constant frequency during steady-state conditions. With conventional voltage-mode constant
on-time converters, each cycle begins when the output voltage crosses to a fixed reference level. However, in
the TPS53632G device, the cycle begins when the current feedback reaches an error voltage level which
corresponds to the amplified difference between the DAC voltage and the feedback output voltage. In the case of
half bridge operation, the device sums the current feedback from secondary current and doubles the output of
the internal current-sense amplifiers.
This approach has two advantages:
• The amplifier DC gain sets an accurate linear load-line slope, which is required for certain VCORE applications.
• The device filters the error voltage input to the PWM comparator to improve the noise performance.
During a steady-state condition, the phases of the TPS53632G switch are 180° phase-displacement. The phase
displacement is maintained both by the architecture (which does not allow the high-side gate drive outputs of
more than one phase to be ON in any condition except transients) and the current ripple (which forces the pulses
to be spaced equally). The controller forces current-sharing by adjusting the ON-time of each phase. Current
balancing requires no user intervention, compensation, or extra components.
7.2 Functional Block Diagram
COMP
DROOP
VDD
Ramp
Comparator
+
GFB
+
+
IAMP
Error
Amplifier
Integrator
+
IS1
VBAT
PWM1
PWM2
On-Time PWM1
1
PWM-HI
On-Time PWM2
2
PWM-LO
CLK1
Voltage
Amplifier
DAC
CSP1
GND
VREF
Clamp
Differential
Amplifier
VFB
V5A
+
+
CLK
Phase
Manager
CLK2
BLANK
ISUM
CSN1
ISUM
CSP2
+
IAMP
DROOP
IS2
Current
Sharing
Circuitry
+
CSN2
+
6
USR
OSR/USR
OSR
ISHARE
ADDR
ILIM
OCP
EN
DAC
PGOOD
VD
ISUM
IS1
IS2
DAC
CPU
Logic, Protection,
and Status Circuitry
SKIP
SCL
I2C
Interface
SDA
FSEL
OCP-I
FREQ-P
VINTF
O-USR
B-RAMP
IMON
SLEWA
VREF
Copyright © 2016, Texas Instruments Incorporated
10
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
7.3 Feature Description
7.3.1 Current Sensing
The TPS53632G device provides independent channels of current feedback for secondary side current
doublers . These independent channels increase the system accuracy and reduce the dependence of circuit
performance on layout compared to an externally summed architecture. The design can use inductor DCR
sensing to yield the best efficiency or resistor current sensing to yield the most accuracy across wide
temperature ranges. DCR sensing can be optimized by using a NTC thermistor to reduce the variation of current
sense with temperature.
The pins CSP1, CSN1, CSP2 and CSN2 are the current sensing pins.
7.3.2
Load Transients
When the load increases suddenly, the output voltage immediately drops. This voltage drop is reflected as a
rising voltage on the DROOP pin. This rising voltage forces the PWM to pulse sooner and more frequently which
causes the inductor current to rapidly increase. As the inductor current reaches the new load current, a steadystate operating condition is reached and the PWM switching resumes the steady-state frequency. Similarly, when
the load releases suddenly, the output voltage rises. This rise is reflected as a falling voltage on the COMP pin.
This rising voltage forces a delay in the PWM pulses until the inductor current reaches the new load current,
when the switching resumes and steady-state switching continues.
7.3.3 PWM and SKIP Signals
The PWM and SKIP signals are outputs of the controller and serve as input to the driver or DrMOS type devices.
Both are 5-V logic signals. The PWM signals are logic high when the high-side driver turns ON. The PWM signal
must be low for the low-side drive to turn ON. When both the drive signals are OFF, the PWM is in tri-state.
7.3.4 5-V, 3.3-V and 1.8-V Undervoltage Lockout (UVLO)
The TPS53632G device continuously monitors the voltage on the V5A, VDD and VINTF pins to ensure a value
high enough to bias the device properly and provide sufficient gate drive potential to maintain high efficiency. The
converter starts with a voltage of approximately 4.4 V and has a nominal 200 mV of hysteresis. After the 5VA,
VDD or VINTF pins go below the VUVLOL level, the corresponding voltage must fall below VPOR (1.5 V) to reset
the device.
The input voltage (VVIN) does not include a UVLO function, so the circuit runs with power inputs as low as
approximately 3 x VOUT.
7.3.5 Output Undervoltage Protection (UVP)
Output undervoltage protection works in conjunction with the current protection described in the Overcurrent
Protection (OCP) section. If the output voltage drops below the low PGOOD voltage threshold, then the drivers
are turned OFF until the EN pin power is cycled.
7.3.6 Overcurrent Protection (OCP)
The TPS53632G device uses a valley current limiting scheme, so the ripple current must be considered. The DC
current value at OCP (IOCP) is the OCP limit value plus half of the ripple current. Current limiting occurs on a
phase-by-phase and pulse-by-pulse basis. If the voltage between the CSPx and CSNx pins is above the OCP
value, the converter delays the next ON pulse until that voltage difference drops below the OCP limit. For
inductor current sensing circuits, the voltage between the CSPx and CSNx pins is the inductor DCR value
multiplied by the resistor divider which is part of the NTC compensation network. As a result, a wide range of
OCP values can be obtained by changing the resistor divider value. In general, use the highest OCP setting
possible with the least attenuation in the resistor divider to provide as much signal to the device as possible. This
provides the best performance for all parameters related to current feedback.
In OCP mode, the voltage drops until the UVP limit is reached. Then the converter sets the PGOOD to inactive,
and the drivers are turned OFF. The converter remains in this state until the device is reset by the V5A, VDD or
VINTF rails.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
11
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Feature Description (continued)
7.3.7 Overvoltage Protection
An OVP condition is detected when the output voltage is greater than the PGDH voltage, and greater than VDAC.
VOUT > + VPGDH greater than VDAC. In this case, the converter sets PGOOD inactive, and turns ON the drive for
the low-side MOSFET. The converter remains in this state until the device is reset by cycling the V5A, VDD or
VINTF pin. However, the OVP threshold is blanked much of the time. In order to provide protection to the
processor 100% of the time, there is a second OVP level fixed at VOVPH which is always active. If the fixed OVP
condition is detected, the PGOOD are forced inactive and the low-side MOSFETs are tuned ON. The converter
remains in this state until the V5A, VDD or VINTF pin is reset.
7.3.8 Analog Current Monitor, IMON and Corresponding Digital Output Current
The TPS53632G device includes a current monitor function. The current monitor supplies an analog voltage,
proportional to the load current, on the IMON pin.
The current monitor function is related to the OCP selection resistors. The ROCP is the resistor between the OCPI pin and GND and RCIMON is the resistor between the IMON pin to the OCP-I pin that sets the current monitor
gain. Equation 1 shows the calculation for the current monitor gain.
8ÂÆÈÇ L sr H s E
:4ÂÆÈÇ ;
ìÜØß×æ
H Í 8¼Ìá 1ÛÛÛ. 8
:4È¼É ;
where
•
Σ VCS is the sum of the DC voltages at the inputs to the current sense amplifiers
(1)
To ensure stable current monitor operation and at the same time provide a fast dynamic response, connect a
capacitor with a value between 4.7-nF and 10-nF between the IMON pin and GND.
Set the analog current monitor so that at the maximum processor current (ICC(max)) level, the IMON voltage is 1.7
V. This corresponds to a digital output current value of ‘FF’ in register 03H.
7.3.9 Addressing
The TPS53632G device can be configured for three different base addresses by setting a voltage on the SLEWA
pin. Configure a resistor divider on SLEWA from VREF to GND. A resistor between the SLEWA pin and GND
sets the slew rate. Once the slew rate resistor is selected, the resistor from the VREF pin to the SLEWA pin can
be chosen based on the required base address. For a base address of 0, the VREF to SLEWA resistor can be
left open.
7.3.10 I2C Interface Operation
The TPS53632G device includes a slave I2C interface accessed via the SCL (serial clock) and SDA (serial data)
pins. The interface sets the base VID value, receives current monitor telemetry, and controls functions described
in this section. It operates when EN = low, with the bias supplies in regulation. It is compliant with I2C
specification UM10204, Revision 3.0. The characteristics are:
• Addressing
– 7-bit addressing; address range is 100 0xxx (binary)
– Last three bits are determined by the SLEWA pin at start-up
• Byte read / byte write protocols only (See figures in Protocol Examples section)
• Frequency
– 100 kHz
– 400 kHz
– 1 MHz
– 3.4 MHz
• Logic inputs are 1.8-V logic levels (3.3-V tolerant)
12
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
Feature Description (continued)
7.3.10.1 Key for Protocol Examples
Master Drives SDA
A
ACK
A
Slave Drives SDA
S
Start
W
Write
NAK
P
Stop
R
Read
UDG-13045
7.3.10.2 Protocol Examples
The good byte read transaction the controller ACKs and the master terminates with a NAK/stop.
S
Slave Address
W
A
Reg Address
A
S
Slave Address
R
A
Reg data
A
P
UDG-13046
Figure 5. Good Byte Read Transaction
The controller issues a NAK to the read command with an invalid register address.
S
Slave Address
W
A
Reg Address
A
UDG-13047
Figure 6. NAK Invalid Register Address
Figure 7 illustrates a good byte write.
S
Slave Address
W
A
Reg Address
A
Reg Data
A
P
UDG-13048
Figure 7. Good Byte Write
The controller issues a NAK to a write command with an invalid register address.
S
Slave Address
W
A
Reg Address
A
UDG-13049
Figure 8. Invalid NAK Register Address
The controller issues a NAK to a write command for the condition of invalid data.
S
Slave Address
W
A
Reg Address
A
Reg Data
A
P
UDG-13050
Figure 9. Invalid NAK Register Data
The device executes the master code sequence shown in Figure 10 to enter Hs (3.4-MHz SCL) mode.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
13
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Feature Description (continued)
S
8'b00001xxx
A
UDG-13051
Figure 10. Master Code Sequence
7.3.11 Start-Up Sequence
The TPS53632G initializes when all of the supply voltages rise above the UVLO thresholds. This function is also
know as a cold boot. The device then reads all of the various settings (such as frequency and overcurrent
protection). This process takes less than 1.2 ms. During this time, the VSR pin initializes to the BOOT voltage.
The output voltage rises to the voltage select register (VSR) level when the EN pin (enable) goes high. As soon
as the BOOT sequence completes, PGOOD is HIGH and the I2C interface can be used to change the voltage
select register. The current VSR value is held when EN goes low and returns to a high state This function is also
know as a warm boot). The VSR can be changed when EN is low, however, this is not recommended prior to
completion of the cold boot process.
7.3.12 Power Good Operation
PGOOD is an open-drain output pin that is designed to be pulled up with an external resistor to a voltage 3.6 V
or less. Normal PGOOD operation (exclusive of OC or MAXVID interrupt action) is shown in Figure 11. On initial
power-up, a power good status occurs within 6 µs of the DAC reaching its target value. When EN is brought low,
the PGOOD pin is also brought low for 250 µs and then is allowed to float. The TPS53632G device pulls down
the PGOOD signal when the EN signal subsequently goes high and returns high again within 6 µs of the end of
the DAC ramp. The delay period between the EN pin going high and the PGOOD pin going low in this case is
less than 1 µs.
Figure 11 shows the power good operation at initial start up and with falling and rising EN.
VBIAS
VOUT
EN
1 Ps
PGOOD
1.2 ms
6 Ps
250 Ps
250 Ps
UDG-13096
Figure 11. Power Good Operation
14
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
Feature Description (continued)
7.3.13 Fault Behavior
The TPS53632G device has a complete suite of fault detection and protection functions, including input
undervoltage lockout (UVLO) on all power inputs, overvoltage and overcurrent limiting and output undervoltage
detection. The protection limits are summarized in Table 1. The converter suspends switching when the limits are
exceeded and the PGOOD pin goes low. In this state, the fault register 14h is readable. To exit fault protection
mode, power must be cycled.
Table 1. TPS53632G VID Table
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
VOLTAGE
0
0
1
1
0
0
0
0
1
1
0
1
1
19
0.5000
0
1A
0
0
1
1
0
0.5100
1
1
1B
0.5200
0
0
1
1
0
0
1
1
1
0
0
1C
0.5300
1
0
1
1D
0
0
1
0.5400
1
1
1
0
1E
0
0
0.5500
1
1
1
1
1
1F
0.5600
0
0
1
0
0
0
0
0
20
0.5700
1
0
0
0
0
1
21
0.5800
0
1
0
0
0
1
0
22
0.5900
0
1
0
0
0
1
1
23
0.6000
0
1
0
0
1
0
0
24
0.6100
0
1
0
0
1
0
1
25
0.6200
0
1
0
0
1
1
0
26
0.6300
0
1
0
0
1
1
1
27
0.6400
0
1
0
1
0
0
0
28
0.6500
0
1
0
1
0
0
1
29
0.6600
0
1
0
1
0
1
0
2A
0.6700
0
1
0
1
0
1
1
2B
0.6800
0
1
0
1
1
0
0
2C
0.6900
0
1
0
1
1
0
1
2D
0.7000
0
1
0
1
1
1
0
2E
0.7100
0
1
0
1
1
1
1
2F
0.7200
0
1
1
0
0
0
0
30
0.7300
0
1
1
0
0
0
1
31
0.7400
0
1
1
0
0
1
0
32
0.7500
0
1
1
0
0
1
1
33
0.7600
0
1
1
0
1
0
0
34
0.7700
0
1
1
0
1
0
1
35
0.7800
0
1
1
0
1
1
0
36
0.7900
0
1
1
0
1
1
1
37
0.8000
0
1
1
1
0
0
0
38
0.8100
0
1
1
1
0
0
1
39
0.8200
0
1
1
1
0
1
0
3A
0.8300
0
1
1
1
0
1
1
3B
0.8400
0
1
1
1
1
0
0
3C
0.8500
0
1
1
1
1
0
1
3D
0.8600
0
1
1
1
1
1
0
3E
0.8700
0
1
1
1
1
1
1
3F
0.8800
1
0
0
0
0
0
0
40
0.8900
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
15
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Table 1. TPS53632G VID Table (continued)
16
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
VOLTAGE
1
0
0
0
0
0
1
41
0.9000
1
0
0
0
0
1
0
42
0.9100
1
0
0
0
0
1
1
43
0.9200
1
0
0
0
1
0
0
44
0.9300
1
0
0
0
1
0
1
45
0.9400
1
0
0
0
1
1
0
46
0.9500
1
0
0
0
1
1
1
47
0.9600
1
0
0
1
0
0
0
48
0.9700
1
0
0
1
0
0
1
49
0.9800
1
0
0
1
0
1
0
4A
0.9900
1
0
0
1
0
1
1
4B
1.0000
1
0
0
1
1
0
0
4C
1.0100
1
0
0
1
1
0
1
4D
1.0200
1
0
0
1
1
1
0
4E
1.0300
1
0
0
1
1
1
1
4F
1.0400
1
0
1
0
0
0
0
50
1.0500
1
0
1
0
0
0
1
51
1.0600
1
0
1
0
0
1
0
52
1.0700
1
0
1
0
0
1
1
53
1.0800
1
0
1
0
1
0
0
54
1.0900
1
0
1
0
1
0
1
55
1.1000
1
0
1
0
1
1
0
56
1.1100
1
0
1
0
1
1
1
57
1.1200
1
0
1
1
0
0
0
58
1.1300
1
0
1
1
0
0
1
59
1.1400
1
0
1
1
0
1
0
5A
1.1500
1
0
1
1
0
1
1
5B
1.1600
1
0
1
1
1
0
0
5C
1.1700
1
0
1
1
1
0
1
5D
1.1800
1
0
1
1
1
1
0
5E
1.1900
1
0
1
1
1
1
1
5F
1.2000
1
1
0
0
0
0
0
60
1.2100
1
1
0
0
0
0
1
61
1.2200
1
1
0
0
0
1
0
62
1.2300
1
1
0
0
0
1
1
63
1.2400
1
1
0
0
1
0
0
64
1.2500
1
1
0
0
1
0
1
65
1.2600
1
1
0
0
1
1
0
66
1.2700
1
1
0
0
1
1
1
67
1.2800
1
1
0
1
0
0
0
68
1.2900
1
1
0
1
0
0
1
69
1.3000
1
1
0
1
0
1
0
6A
1.3100
1
1
0
1
0
1
1
6B
1.3200
1
1
0
1
1
0
0
6C
1.3300
1
1
0
1
1
0
1
6D
1.3400
1
1
0
1
1
1
0
6E
1.3500
1
1
0
1
1
1
1
6F
1.3600
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
Table 1. TPS53632G VID Table (continued)
VID6
VID5
VID4
VID3
VID2
VID1
VID0
HEX
VOLTAGE
1
1
1
0
0
0
0
70
1.3700
1
1
1
0
0
0
1
71
1.3800
1
1
1
0
0
1
0
72
1.3900
1
1
1
0
0
1
1
73
1.4000
1
1
1
0
1
0
0
74
1.4100
1
1
1
0
1
0
1
75
1.4200
1
1
1
0
1
1
0
76
1.4300
1
1
1
0
1
1
1
77
1.4400
1
1
1
1
0
0
0
78
1.4500
1
1
1
1
0
0
1
79
1.4600
1
1
1
1
0
1
0
7A
1.4700
1
1
1
1
0
1
1
7B
1.4800
1
1
1
1
1
0
0
7C
1.4900
1
1
1
1
1
0
1
7D
1.5000
1
1
1
1
1
1
0
7E
1.5100
1
1
1
1
1
1
1
7F
1.5200
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
17
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
7.4 Device Functional Modes
7.4.1
PWM Operation
The Functional Block Diagram and Figure 12 show how the converter operates in continuous conduction mode
(CCM).
VCORE
ISUM
VDROOP
SW_CLK
Phase 1
Phase 2
Time
UDG-13007
Figure 12. D-CAP+™ Mode Basic Waveforms
Starting with the condition that the high-side FETs are off and the low-side FETs are on, the summed current
feedback (ISUM) is higher than the error amplifier output (VCOMP). ICMP falls until it hits VCOMP, which contains a
component of the output ripple voltage. The PWM comparator senses where the two waveforms cross and
triggers the on-time generator, which generates the internal SW_CLK signal. Each SW_CLK signal corresponds
to one switching ON pulse for one phase.
During single-phase operation, every SW_CLK signal generates a switching pulse on the same phase. Also, ISUM
voltage corresponds to a single-phase inductor current only.
During multi-phase operation, the controller distributes the SW_CLK signal to each of the phases in a cycle.
Using the summed inductor current and cyclically distributing the ON pulses to each phase automatically gives
the required interleaving of 360/n, where n is the number of phases.
7.5 Configuration and Programming
After the 5-V, 3.3-V, or VINTF power is applied to the controller (all are above UVLO level), the following
information is latched and cannot be changed anytime during operation. The Electrical Characteristics table
defines the values of the selections.
7.5.1 Operating Frequency
The resistor between the FREQ-P pin and GND sets the switching frequency. See the Electrical Characteristics
table for the resistor settings corresponding to each frequency selection.
NOTE
The operating frequency is a quasi-fixed frequency in the sense that the ON time is fixed
based on the input voltage (at the VIN pin) and output voltage (set by VID). The OFF time
varies based on various factors such as load and power-stage components.
7.5.2 Overcurrent Protection (OCP) Level
The resistor from OCP-I to GND sets the OCP level of the CPU channel. See the Electrical Characteristics table
for the resistor settings corresponding to each OCP level.
18
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
Configuration and Programming (continued)
7.5.3 IMON Gain
The resistors from IMON to OCP-I and OCP-I to GND set the DC load current monitor (IMON) gain.
7.5.4 Slew Rate
The SetVID fast slew rate is set by the resistor from SLEWA pin to GND. See the Electrical Characteristics table
for the resistor settings corresponding to each slew rate setting.
7.5.5 Base Address
The voltage on SLEWA pin sets the device base address.
7.5.6 Ramp Selection
The resistor from RAMP to GND sets the ramp compensation level. See the Electrical Characteristics table for
the resistor settings corresponding to each ramp level.
7.5.7 Active Phases
Normally, the controller is configured to operate in 3-phase mode. To enable 2-phase mode, tie the CSP3 pin to
a 3.3-V supply and the CSN3 pin to GND. To enable 1-phase mode, tie the CSP2 and CSP3 pins to a 3.3-V
supply and tie the CSN2 and CSN3 pins to GND.
7.6 Register Maps
The I2C interface can support 400-kHz, 1-MHz, and 3.4-MHz clock frequencies. The I2C interface is accessible
even when EN is low. The following registers are accessible via I2C.
7.6.1 Voltage Select Register (VSR) (00h)
• Type: Read and write
• Power-up value: 48h. This value can be changed before the rising edge of EN to change BOOT voltage.
• EN rising (after power-up): prior programmed value
• See Table 1 for exact values
• A command to set VSR < 19h (minimum VID) generates a NAK and the VSR remains at the prior value
b7
–
b6
b5
b4
b3
VID[6:0]
b2
b1
b0
b5
–
b4
–
b3
–
b2
–
b1
–
b0
LSB
b4
–
b3
–
b2
–
b1
–
b0
LSB
7.6.2 IMON Register (03h)
• Type: Read only
• Power-up value: 00h
• EN rising (after power-up):00h
b7
MSB
b6
–
7.6.3 VMAX Register (04h)
• Type: Read / write (see below)
• Power-up value: 1.28 V (OTP value)
• EN rising (after power-up): Last written value
b7
Lock
b6
MSB
b5
–
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
19
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Bit definitions:
BIT
NAME
0-6
VMAX
7
Lock
DEFINITION
Maximum VID setting
Access protection of the VMAX register
0: No protection, R/W access to bits 0-6
1: Access is read only; reset after UVLO event.
7.6.4 Power State Register (06h)
• Type: Read and write
• Power-up value: 00h
• EN rising (after power-up): 00h
b7
–
b6
–
b5
–
b4
–
b3
–
b2
–
b1
MSB
b0
LSB
Bit definitions:
VALUE
DEFINITION
0
Multi-phase CCM
1
Single-phase CCM
2
Single-phase DCM
7.6.5 SLEW Register (07h)
• Type: Read and write (see below)
• Power-up value: Defined by SLEWA pin at power-up
• EN rising (after power-up): Last written value
• Write only a single ‘1’ for the SLEW rate desired
b7
48 mV/µs
b6
42mV/µs
b5
36 mV/µs
b4
30 mV/µs
b3
24 mV/µs
b2
18 mV/µs
b1
12 mV/µs
b0
6 mV/µs
b4
–
b3
Device thermal
shutdown
b2
OVP
b1
UVP
b0
OCP
7.6.6 Lot Code Registers (10-13h)
• Type: 8-bits; read only
• Power-up value: Programmed at factory
7.6.7 Fault Register (14h)
• Type: 8-bits; read only
• Power-up value: 00h
b7
–
20
b6
–
b5
–
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
8 Applications and Implementation
8.1 Application Information
The TPS53632G device has a very simple design procedure. A Microsoft Excel®-based component value
calculation tool is available. Please contact your local TI representative to get a copy of the spreadsheet.
8.2 Typical Application
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
21
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
8.2.1 D-CAP+™ Half-Bridge Application
VREF
C8 10 PF
R15
DNP
R12
169 NŸ
C7 10 PF
R31
DNP
48V_BUS
IMON
R21
10 Ÿ
R14
DNP
R16
30 NŸ
R13
24 NŸ
C13
22 PF
C14
22 PF
R28
1.47 NŸ
C15
0.1 PF
R18
10 NŸ
R17
20 NŸ
C12
22 PF
R29
30.1 NŸ
VINTF
SLEWA
C9
0.1 PF
R19
L1
300 nH
RT1
10 NŸ
R30
1.65 NŸ
C17
680 nF
48V_BUS
90.9 NŸ
12
11
10
9
RAMP
FREQ-P
PU
VINTF
17 CSP1
13
IMON
14
OCP±I
15
VBUS
VOUT
16
SLEWA
R20
10 NŸ
18 CSN1
8
SKIP
7
PWM-HI
20 CSP2
21 PU3
HI
25
27
28
29
VDD
2
SDA
1
30
31
10 NŸ
R4
HB
HO
C19
4 x 22 µF
8
VCC
AGND
LO
R25
1.47 NŸ
PGND
9
PGOOD
3.3-V
R1
1Ÿ
VDD
VCC
AGND
6
7
R24
2.2 Ÿ
C11
22 PF
R26
30.1 NŸ
LMG5200
L2
300 nH
5-V
C4
DNP
R7
DNP
RT2
10 NŸ
R27
1.65 NŸ
C21
4 x 22 µF
R5
9.75 NŸ
VINTF
R3
1 NŸ
R23
2.2 Ÿ
C2
0.1 PF
VREF
SCL
SDA
1 ENA
R4 10 Ÿ
C3
C22
4 x 47 µF
5-V
R22
1.47 NŸ
R2
1 NŸ
C6
0.33 PF
C18
680 nF
VOUT
C10
1 PF
C1
1 PF
32
LI
C5
DNP
R6
10 NŸ
C20
4x 47 µF
SW
GaN Driver
3.3-V
NC
3
SCL
NC
GND
COMP
26
HS
LI
4
PGOOD
Thermal Pad
V5A
24 VFB
VREF
VFB
HI
5
NC
DROOP
23 GFB
VIN
6
22 NC
GFB
HB
VR_ON
PWM-LO 5
TPS53632G
U1
2
1
EN
4
19 CSN2
3.3-V
3
HS
R32
0Ÿ
1 PF
5V_CON
VDD 6
2 INA#
OUTA 7
4 INB#
OUTB 5
VOUT
8
R8
10 Ÿ
VFB
To controller
GFB
R10 0 Ÿ
ENB
GND 3
C16
1 PF
UCC27523
VCPU_SENSE
From processor
R11 0 Ÿ
VSS_SENSE
R9
10 Ÿ
Copyright © 2016, Texas Instruments Incorporated
Figure 13. Half-Bridge Application with GaN Power Stage on Primary Side
22
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
8.2.1.1 Design Requirements
Design example specifications:
• Input voltage range: 36 V to 72 V
• VOUT = 1.0 V
• ICC(max) = 50 A
• Slew rate (minimum): 12 mV/µs
• No Load Line
8.2.1.2 Detailed Design Procedure
8.2.1.2.1 Step 1: Select Switching Frequency
The switching frequency is selected by a resistor (RF) between the FREQ_P pin and GND. The frequency is
approximate and expected to vary based on load and input voltage.
Table 2. TPS53632G Device Frequency Selection Table
SELECTION
RESISTOR (RF) VALUE (kΩ)
OPERATING FREQUENCY
(fSW) (kHz)
20
300
24
400
30
500
39
600
56
700
75
800
100
900
150
1000
For this design, choose a switching frequency of 300 kHz. So, RF = 20 kΩ.
8.2.1.2.2 Step 2: Set The Slew Rate
A resistor to GND (RSLEWA) on SLEWA pin sets the slew rate. For a minimum 12 mV/µs slew rate, the resistor
RSLEWA = 24 kΩ.
Table 3. Slew Rate Versus Selection Resistor
SELECTION RESISTOR
RSLEWA (kΩ)
MINIMUM SLEW RATE
(mV/µs)
20
6
24
12
30
18
39
24
56
30
75
36
100
42
150
48
NOTE
The voltage on the SLEWA pin also sets the base address. For a base address of 00, the
SLEWA pin should have only one resistor, RSLEW to GND. For other base addresses, a
resistor can be connected between the SLEWA pin and the VREF pin (1.7 V). This
resistor can be calculated to set the corresponding voltage for the required address listed
in Table 4.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
23
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Table 4. Address Selection
SLEWA
VOLTAGE
BASE
ADDRESS
VSLEWA ≤ 0.30 V
0
0.35 V ≤ VSLEWA ≤ 0.45 V
1
0.55 V ≤ VSLEWA ≤ 0.65 V
2
0.75 V ≤ VSLEWA ≤ 0.85 V
3
0.95 V ≤ VSLEWA ≤ 1.05 V
4
1.15 V ≤ VSLEWA ≤ 1.25 V
5
1.35 V ≤ VSLEWA ≤ 1.45 V
6
1.55 V ≤ VSLEWA ≤ 1.65 V
7
8.2.1.2.3 Step 3: Determine Inductor Value And Choose Inductor
Applications with smaller inductor values have better transient performance but also have higher voltage ripple
and lower efficiency. Applications with higher inductor values have the opposite characteristics. It is common
practice to limit the ripple current between 20% and 40% of the maximum current per phase. In this case, use
30%.
IP -P =
80 (A )
3
V ´ dT
L=
IP-P
´ 0.4 = 10.6 (A)
(2)
(3)
In this equation,
V = VIN(max ) - VOUT = 13V
dT =
VOUT
(
f ´ VIN(max )
(4)
= 238ns
)
(5)
So, calculating, L = 0.29 µH.
Choose an inductance value of 0.3 µH. The inductor must not saturate during peak loading conditions.
æ ICC(max ) I
ö
+ P-P ÷ ´ 1.2 = 38.4 A
ISAT = ç
ç
n
2 ÷
è
ø
where
•
n is the number of phases
(6)
The factor of 1.2 allows for current sensing and current limiting tolerances.
The chosen inductor should have the following characteristics:
• As flat as an inductance versus current curve as possible. Inductor DCR sensing is based on the idea L /
DCR is approximately a constant through the current range of interest
• Either high saturation or soft saturation
• Low DCR for improved efficiency, but at least 0.6 mΩ for proper signal levels
• DCR tolerance as low as possible for load-line accuracy
For this application, choose a 0.3-µH, 0.29-mΩ inductor.
8.2.1.2.4 Step 4: Determine Current Sensing Method
The TPS53632G device supports both resistor sensing and inductor DCR sensing. Inductor DCR sensing is
chosen. For resistor sensing, substitute the resistor value for RCS(eff) in the subsequent equations.
24
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
8.2.1.2.5 Step 5: DCR Current Sensing
Design the thermal compensation network and selection of OCP. In most designs, NTC thermistors are used to
compensate thermal variations in the resistance of the inductor winding. This winding is generally copper, and so
has a resistance coefficient of 3900 PPM/°C. NTC thermistors, as an alternative, have very non-linear
characteristics and need two or three resistors to linearize them over the range of interest. A typical DCR circuit
is shown in Figure 14.
L
RDCR
I
RSEQU
RNTC
RSERIES
RPAR
CSENSE
CSP
CSN
UDG-12199
Figure 14. Typical DCR Sensing Circuit
In this design example, the voltage across the CSENSE capacitor exactly equals the voltage across RDCR when:
L
- CSENSE ´ REQ
RDCR
(7)
æ R
ö
P _ N ´ RSEQU ÷
REQ = ç
ç RSEQU + RP _ N ÷
è
ø
(
)
where
•
REQ is the series (or parallel) combination of RSEQU, RNTC, RSERIES and RPAR
´ (RNTC + RSERIES )
R
RP _ N = PAR
RPAR + RNTC + RSERIES
(8)
(9)
Ensure that CSENSE is a capacitor type which is stable over temperature. Use X7R or better dielectric (C0G
preferred).
Because calculating these values by hand is difficult, TI offers a spreadsheet using the Excel solver function
available to calculate them for you. Contact a TI representative to get a copy of the spreadsheet.
In this design, the following values are input to the spreadsheet.
• L = 0.3 µH
• RDCR = 0.29 mΩ
• Minimum Overcurrent Limit = 110 A
• Thermistor R25 = 10 kΩ and “B” value = 3380 kΩ
The spreadsheet then calculates the OCP setting and the values of RSEQU, RSERIES, RPAR, and CSENSE. In this
case, the OCP setting is the value of the resistor that is conencted between the OCP-I pin and GND. (100 kΩ )
The nearest standard component values are:
• RSEQU = 1.47 kΩ
• RSERIES = 1.65 kΩ
• RPAR = 30.1 kΩ
• CSENSE = 680 nF
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
25
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Consider the effective divider ratio for the inductor DCR. Equation 10 shows the effective current sense
resistance (RCS(eff) calculation.
RP _ N
RCS(eff ) = RDCR ´
RSEQU + RP _ N
where
•
RP_N is the series and parallel combination of RNTC, RSERIES, and RPAR
RP _ N =
(10)
RPAR ´ (RNTC + RSERIES )
RPAR + RNTC + RSERIES
where
•
RCS(eff) is 0.244 mΩ
(11)
8.2.1.2.6 Step 6: Select OCP Level
Set the OCP threshold level that corresponds to Equation 12.
IVALLEY ´ RCS(eff ) = VCS(ocp )
(12)
I
IVALLEY = OCP - 0.5 - IRIPPLE
NPH
(13)
Table 5. OCP Selection (1)
(1)
SELECTION RESISTOR
ROCP (kΩ)
TYPICAL VCS(OCP)
(mV)
20
4
24
8
30
13
39
19
56
25
75
32
100
40
150
49
If a corresponding match is not found, then select the next higher
setting.
8.2.1.2.7 Step 7: Set the Load-Line Slope
The load-line slope is set by resistor, RDROOP (between the DROOP pin and the COMP pin) and resistor RCOMP
(between the COMP pin and the VREF pin). The gain of the DROOP amplifier (ADROOP) is calculated in
Equation 14.
æ æR
ADROOP = ç 1 + ç DROOP
ç
è è RCOMP
(
ö ö æ RCS(eff ) ´ A CS
÷ ÷÷ = ç
RLL
ø ø èç
)÷ö = 0.244m ´ 6 = 1.46
÷
ø
1.0m
(14)
Set the value of RDROOP to 10 kΩ, RCOMP as shown in Equation 15.
RDROOP
RCOMP =
= 21.5kW
(ADROOP - 1)
(15)
Based on measurement, this value is adjusted to 9.75 kΩ.
NOTE
See Loop Compensation for Zero Load-Line for zero-load line.
26
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
8.2.1.2.8 Step 8: Current Monitor (IMON) Setting
Set the analog current monitor so that at ICC(max) the IMON pin voltage is 1.7 V. This corresponds to a digital IOUT
value of ‘FF’ in I2C register 03H. The voltage on the IMON pin is shown in Equation 16.
8ÂÆÈÇ L sr H s E
:4ÂÆÈÇ ;
ìÜØß×æ
H Í 8¼Ìá 1ÛÛÛ. 8
:4È¼É ;
(16)
So,
æ R
ö
1.7 = 10 ´ ç 1 + IMON ÷ ´ RCS(eff ) ´ ICC(max )
ROCP ø
è
where
•
•
•
ICC(max)is 80 A
RCS(eff) is 0.244 mΩ
ROCP is 24 kΩ
(17)
Solving, RIMON = 169 kΩ. RIMON is connected from IMON pin to OCP-I pin.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
27
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
8.2.1.3 Application Performance Plots
1.005
36V Input
48V Input
60V Input
75V Input
1
Efficiency (%)
Output Voltage (V)
0.995
0.99
0.985
0.98
0.975
0.97
0.965
0
5
10
15
20
25
30
35
Output Current (A)
40
45
96
93
90
87
84
81
78
75
72
69
66
63
60
57
36V Input
48V Input
60V Input
75V Input
0
50
5
10
15
D001
VOUT = 1 V
45
50
55
D001
Figure 16. Efficiency vs Output Current
660
1.6
36V Input
48V Input
60V Input
75V Input
656
652
1.4
1.2
648
IMON Voltage (V)
Switching Frequency (kHz)
40
VOUT = 1 V
Figure 15. Output Voltage vs Output Current
644
640
636
632
1
0.8
0.6
0.4
628
36V Input
75V Input
0.2
624
620
0
0
5
10
15
20
25
Output Current (A)
30
35
40
0
5
D001
VOUT = 1 V
10
15
20
25
Output Current (A)
30
35
40
D001
VOUT = 1 V
Figure 17. Switching Frequency vs Output Current
28
20 25 30 35
Output Current (A)
Figure 18. IMON Voltage vs Output Current
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
8.2.1.4 Loop Compensation for Zero Load-Line
The TPS53632G device control architecture (current mode, constant on-time) has been analyzed by the Center
for Power Electronics Systems (CPES) at Virginia Polytechnic and State University. The following equations are
from the presentation: Equivalent Circuit Representation of Current-Mode Control from November 21, 2008.
A simplified control loop diagram is shown in Figure 19. One of the benefits of this technology is the lack of the
sample and hold effect that limits the bandwidth of fixed frequency current mode controllers and causes subharmonic oscillations.
The open loop gain, GOL, is the gain of the error amplifier, multiplied by the control-to-output gain and is
calculated in Equation 18.
GOL = GCOMP ´ GCO
(18)
The control-to-output gain circuitry is shown in Figure 19.
COMP
R1
DROOP
DAC
Current Sense
Amplifier
+
+
Voltage
Amplifier
C2
ESR
ISUM
C1
RLOAD
R2
C1
VREF
Figure 19. Control To Output Gain Circuitry
The control-to-output gain is calculated in Equation 19.
vO
= KC ´
vC
1
æ w ö æ w2
1+ ç
÷+ç 2
è Q1 ´ w1 ø çè w1
ö
÷
÷
ø
´
(w ´ RESR ´ COUT ) + 1
æ w ö
ç
÷ +1
è wa ø
where
•
•
•
æ RLOAD ö
ç
÷
è Ri ø
KC =
æ t ´ RLOAD ö
1 + ç ON
÷
2 ´ LS
è
ø
p
w1 =
tON
Q1 =
tON =
•
2
p
VOUT
VIN ´ fSW
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
29
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
•
www.ti.com
æ t ´ RLOAD ö
1 + ç ON
÷
2 ´ LS
è
ø
wa =
æ æ tON ´ RLOAD
RLOAD ´ COUT ´ ç 1 + ç
ç
2 ´ LS
è è
öö
÷ ÷÷
øø
(19)
For this converter, Ri = RCS(eff) × ACS
The theoretical control-to-output transfer function shows 0-dB bandwidth is approximately 20 kHz and the phase
margin is greater than 90°. As a result, creating the desired loop response is a matter of adding an appropriate
pole-zero or pole-zero-pole compensation for the high-gain system.
The loop compensation is designed to meet the following criteria:
1. Phase margin ≥ 60°
(a) More stable and settles more quickly for repetitive transients
fSW
f
³ BW ³ SW
3
2. Bandwidth: 5
(a) High-enough BW for good transient response.
(b) If too high, the response for the voltage changes gets very “bumpy”, as each voltage step causes several
pulses very quickly.
3. The phase angle of the compensation at the switching frequency needs to be very near to 0 degrees
(resistive)
(a) Otherwise, there is a phase shift between DROOP and ISUM
(b) Practically, this means the zero frequency should be < fSW / 2, and any high-frequency pole (for noise
rejection) needs to be > 2 × fSW.
The voltage error amplifier is used in the design. The compensation technique used here is a type II
compensator. Equation 20 describes the transfer function, which has a pole that occurs at the origin. The type II
amplifier also has a 0 (fZ) that can be programmed by selecting R1 and C1 values. In addition, the type II
compensation network has a pole (fP) that can be programmed by selecting R1 and C2.
(s ´ R1´ C1 + 1)
1
GCOMP =
´
s ´ (C1 + C2 )´ R2
æ C1´ C2 ö
s ´ R1´ ç
÷ +1
è C1 + C2 ø
(20)
1
fZ =
2p ´ R1´ C1
(21)
1
fP =
æ C1´ C2 ö
2p ´ R1´ ç
÷
è C1 + C2 ø
(22)
R1 sets the loop crossover to correct for the gain at control to output function. In this design, select R2 = 2 kΩ.
æ -GCO(fc ) ö
ç
÷
ç
÷
20
è
ø
R1 = R2 ´ 10
=
æ -10dB ö
-ç
÷
2kW ´ 10 è 20 ø
(23)
Capacitor C1 adds phase margin at crossover frequency and can be set between 10% and 20% of the switching
frequency.
1
C1 =
2p ´ fSW ´ 0.1´ R1
(24)
The last consideration for the voltage loop compensation design is C2. The purpose of C2 is to cancel the phase
gain caused by the ESR of the output capacitor in the control-to-output function after the loop crossover. To
ensure the gain continues to roll off after the voltage loop crossover, the C2 is selected to meet Equation 25.
C2 =
30
COUT ´ ESR
R1
(25)
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
9 Power Supply Recommendations
This device is designed to operate from a supply voltage at the V5A pin (5-V power input for analog circuits) from
4.5 V to 5.5 V and a supply voltage at the VDD pin (3.3-V digital power input) from 3.1 V to 3.5 V, and a supply
voltage at the VINTF pin from 1.7 V to 3.5 V. Use only a well-regulated supply. The VIN pin input must be
connected to the conversion input voltage and must not exceed 28 V. Proper bypassing of the V5A and VDD
input supplies is critical for noise performance, as is PCB layout and grounding scheme. See the
recommendations in the Layout section.
10
Layout
10.1 Layout Guidelines
10.1.1 PCB Layout
• Check the pinout of the controller on schematic against the pinout of the datasheet.
• Have a component value calculator tool ready to check component values.
• Carefully check the choice of inductor and DCR.
• Carefully check the choice of output capacitors.
• Because the voltage and current feedback signals are fully differential, double check their polarity.
– CSP1 / CSN1
– CSP2 / CSN2
– VOUT_SENSE to VFB / GND_SENSE to GFB
• Make sure the pull-up on the SDA, and SCL lines are correct. Ensure there is a bypass capacitor close to the
device on the pull-up VINTF rail to GND of the device.
• TI strongly recommends that the device GND be separate from the system and Power GND.
Most Critical Layout Rule
Make sure to separate noisy driver interface lines.
The driver is outside of the device. All gate-drive and switch-node traces must be local to the inductor and
MOSFETs.
10.1.2 Current Sensing Lines
Given the physical layout of most systems, the current feedback (CSPx and CSNx) may have to pass near the
power chain.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
31
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Layout Guidelines (continued)
Noisy
Quiet
Inductor
Outline
LLx
VCORE
CSNx
CSPx
RSEQ
Thermistor
RSERIES
UDG-12198
Figure 20. Kelvin Connections To The Inductor For DCR Sensing
Good load-line, current sharing, and current limiting performance of the TPS53632G device requires clean
current feedback, so take the following precautions:
• Ensure all vias in the CSPx and CSNx traces are isolated from all other signals.
• TI recommends dotted signal traces be run in internal planes.
• If possible, change the name of the CSNx trace if possible to prevent automatic ties to the VCORE plane.
• Put RSEQU at the boundary between noisy and quiet areas.
• Run CSPx and CSNx as a differential pair in a quiet layer.
• Place the capacitor as near to the device pins as possible.
• Make a Kelvin connection to the pads of the resistor or inductor used for current sensing. See Figure 20 for a
layout example.
• Run the current feedback signals as a differential pair to the device.
• Run the lines in a quiet layer. Isolate the lines from noisy signals by a voltage or ground plane.
• Put the compensation capacitor for DCR sensing (CSENSE) as close to the CS pins as possible.
• Place any noise filtering capacitors directly under or near the TPS53632G device and connect to the CS pins
with the shortest trace length possible.
10.1.3 Feedback Voltage Sensing Lines
The voltage feedback coming from the CPU socket must be routed as a differential pair all the way to the VFB
and GFB pins of the TPS53632G device. Avoid routing over switch-node and gate-drive traces.
10.1.4 PWM And SKIP Lines
The PWM and SKIP lines should be routed from the TPS53632G device to the driver without crossing any
switch-node or the gate drive signals.
10.1.4.1 Minimize High Current Loops
Figure 21 shows the primary current loops in each phase, numbered in order of importance.
32
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
Layout Guidelines (continued)
VBAT
CB
CIN
1
Q1
4b
DRVH
L
4a
VCORE
LL
2
3b
CD
Q2
COUT
DRVL
3a
PGND
UDG-12191
Figure 21. Major Current Loops To Minimize
The most important loop to minimize the area of is loop 1, the path from the input capacitor through the high and
low-side FETs, and back to the capacitor through ground.
Loop 2 is from the inductor through the output capacitor, ground, and Q2. The layout of the low-side gate drive
(Loops 3a and 3b) is important. The guidelines for the gate drive layout are:
• Make the low-side gate drive as short as possible (1 in or less preferred).
• Make the DRVL width to length ratio of 1:10, wider (1:5) if possible.
• If changing layers is necessary, use at least two vias.
10.1.5 Power Chain Symmetry
The TPS53632G device does not require special care in the layout of the power chain components because
independent isolated current feedback is provided. Lay out the phases in a symmetrical manner, if possible. The
rule is: the current feedback from each phase needs to be clean of noise and have the same effective currentsense resistance.
10.1.6 Component Location
Place components as close to the device in the following order.
1. CS pin noise filtering components
2. COMP pin and DROOP pin compensation components
3. Decoupling capacitors for VREF, VDD, V5A, and VINTF
4. Decoupling capacitor for VINTF rail, which is pullup voltage for the digital lines. This decoupling should be
placed near the device to have good signal integrity.
5. OCP-I resistors, FREQ_P resistors, SLEWA resistors, and RAMP resistors
10.1.7 Grounding Recommendations
The TPS53632G device has an analog ground and a thermal pad. The usual procedure for connecting these is:
• Keep the analog GND of the device and the power GND of the power circuit separate. The device analog
GND and the power circuit power GND can be connected at one single quiet point in the layout.
• The thermal pad does not have an electrical connection to device. But the thermal pad must be connected to
GND pin (pin 29) of the device to give good ground shielding. Do not connect the thermal pad to system
GND.
• Tie the thermal pad to a ground island with at least 4 vias. All the analog components can connect to this
analog ground island.
• The analog ground can be connected to any quiet spot on the system ground. A quiet spot is defined as a
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
33
TPS53632G
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
www.ti.com
Layout Guidelines (continued)
•
spot where no power supply switching currents are likely to flow. Use a single point connection from analog
ground to the system ground.
Ensure that the low-side MOSFET source connection and the input decoupling capacitors have a sufficient
number of vias.
10.1.8 Decoupling Recommendations
• Decouple V5A and VDD to GND with a ceramic capacitor (with a value of at least 1 µF) .
• Decouple VINTF to GND with a capacitor (with a value of at least 0.1 µF) to GND.
10.1.9 Conductor Widths
• Follow TI guidelines with respect to the voltage feedback and logic interface connection requirements.
• Maximize the widths of power, ground, and drive signal connections.
• For conductors in the power path, be sure there is adequate trace width for the amount of current flowing
through the traces.
• Make sure there are sufficient vias for connections between layers. Use 1 via minimum per ampere of current.
10.2 Layout Example
1.8 V and IMON to GND
decoupling capacitor
PWM
signals
Differential routing
of CSP and CSN in
quiet internal layers.
V5A, VREF, VCCIO
and VDD decoupling
capacitor to analog GND
Differential routing
of VFB and GFB
I2C Interface
signals
Compensation
Network
Figure 22. Example Layout
11 Device and Documentation Support
11.1 Trademarks
D-CAP+ is a trademark of Texas Instruments.
Excel is a registered trademark of Microsoft Corporation.
All other trademarks are the property of their respective owners.
34
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
TPS53632G
www.ti.com
SLUSCJ3A – APRIL 2016 – REVISED JUNE 2019
11.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Submit Documentation Feedback
Copyright © 2016–2019, Texas Instruments Incorporated
Product Folder Links: TPS53632G
35
PACKAGE OPTION ADDENDUM
www.ti.com
15-Jun-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
TPS53632GRSMR
ACTIVE
VQFN
RSM
32
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-10 to 105
TPS
53632G
TPS53632GRSMT
ACTIVE
VQFN
RSM
32
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-10 to 105
TPS
53632G
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
15-Jun-2016
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
Automotive and Transportation
www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom
www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2016, Texas Instruments Incorporated