SGW50N60HS Data Sheet (350 KB, EN)

SGW50N60HS
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
•
•
•
•
PG-TO-247-3
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGW50N60HS
VCE
IC
600V
50A
Eoff25
Tj
Marking
0.88mJ 150°C G50N60HS
Package
PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
600
Unit
V
A
TC = 25°C
100
TC = 100°C
50
Pulsed collector current, tp limited by Tjmax
ICpuls
150
Turn off safe operating area
-
150
Avalanche energy single pulse
IC = 50A, VCC=50V, RGE=25Ω
start TJ=25°C
EAS
280
mJ
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
VGE
±20
±30
V
Short circuit withstand time2)
tSC
10
µs
Ptot
416
W
Operating junction and storage temperature
Tj ,
Tstg
-55...+150
°C
Time limited operating junction temperature for t < 150h
Tj(tl)
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
VCE ≤ 600V, Tj ≤ 150°C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3
Nov 09
SGW50N60HS
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.3
K/W
RthJA
40
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V, I C = 50 0µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15V, I C = 50A
T j = 25° C
-
2.8
3.15
T j = 15 0° C
-
3.15
-
3
4
5
Gate-emitter threshold voltage
VGE(th)
I C = 1mA ,V C E = V G E
Zero gate voltage collector current
ICES
V C E = 600V ,V G E = 0V
µA
T j = 25° C
-
-
40
-
3000
T j = 15 0° C
-
Gate-emitter leakage current
IGES
V C E = 0V ,V G E = 2 0V
-
-
100
nA
Transconductance
gfs
V C E = 20V, I C = 50A
-
31
-
S
Input capacitance
Ciss
V C E = 25V,
-
2572
-
pF
Output capacitance
Coss
V G E = 0V,
-
245
-
Reverse transfer capacitance
Crss
f= 1 M Hz
-
158
-
Gate charge
QGate
V C C = 4 80V, I C = 50A
-
179
-
nC
-
13
-
nH
-
471
-
A
Dynamic Characteristic
V G E = 1 5V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current1)
1)
IC(SC)
V G E = 1 5V,t S C ≤10µs
V C C ≤ 600V,
T j ≤ 150° C
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.3
Nov 09
SGW50N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
47
-
-
32
-
-
310
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 25° C,
V C C = 4 00V, I C = 50A,
V G E = 0/ 1 5V ,
R G = 6. 8Ω
L σ 1) = 55nH,
1)
C σ = 40 pF
Energy losses include
“tail” and diode
reverse recovery2).
-
16
-
-
1.08
-
-
0.88
-
-
1.96
-
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1
2
T j = 15 0° C
V C C = 4 00V, I C = 50A,
V G E = 0/ 1 5V ,
R G = 1. 8Ω
L σ 1 ) = 60nH,
C σ 1 ) = 40pF
Energy losses include
“tail” and diode
reverse recovery2).
T j = 15 0° C
V C C = 4 00V, I C = 50A,
V G E = 0/ 1 5V ,
R G = 6. 8Ω
L σ 1 ) = 60nH,
1)
C σ = 40pF
Energy losses include
“tail” and diode
reverse recovery2).
-
50
-
-
28
-
-
225
-
-
14
-
-
1
-
-
0.90
-
-
1.9
-
-
48
-
-
31
-
-
350
-
-
20
-
-
1.5
-
-
1.1
-
-
2.6
-
ns
mJ
ns
mJ
Leakage inductance L σ and Stray capacity C σ due to test circuit in Figure E.
Diode used in this test is IDP45E60
Power Semiconductors
3
Rev. 2.3
Nov 09
SGW50N60HS
2µs
120A
100A
T C=110°C
80A
60A
Ic
40A
10µs
10A
50µs
1ms
10ms
Ic
20A
tP=1µs
100A
T C=80°C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
140A
1A
DC
0A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 6.8Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C;
VGE=15V)
100A
90A
IC, COLLECTOR CURRENT
250W
150W
Ptot,
POWER DISSIPATION
350W
80A
70A
60A
50A
40A
30A
20A
50W
10A
25°C
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Power Semiconductors
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.3
Nov 09
SGW50N60HS
VGE=19V
15V
13V
11V
9V
7V
120A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
120A
90A
60A
0V
1V
2V
3V
60A
0A
4V
120A
90A
60A
TJ=150°C
30A
25°C
0A
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
Power Semiconductors
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
90A
30A
30A
0A
V GE=19V
15V
13V
11V
9V
7V
IC=100A
4,0V
3,5V
IC=50A
3,0V
2,5V
IC=25A
2,0V
1,5V
1,0V
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.3
Nov 09
SGW50N60HS
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
td(off)
100 ns
td(on)
tf
tr
tr
10ns
0A
20A
40A
60A
10 ns
80A
t, SWITCHING TIMES
td(off)
100ns
td(on)
tr
tf
10ns
25°C
50°C
75°C
100°C
3Ω
6Ω
9Ω
12Ω
15Ω
5,5V
5,0V
4,5V
4,0V
3,5V
max.
3,0V
2,5V
typ.
2,0V
1,5V
1,0V
-50°C
125°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=50A, RG=6.8Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
0Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=50A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER TRSHOLD VOLTAGE
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=6.8Ω,
Dynamic test circuit in Figure E)
min.
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1mA)
6
Rev. 2.3
Nov 09
SGW50N60HS
*) Eon and E ts include losses
due to diode recovery
E ts*
4mJ
E on*
3mJ
2mJ
Eoff
1mJ
E, SWITCHING ENERGY LOSSES
5mJ
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery
3.5 mJ
3.0 mJ
2.5 mJ
Ets*
2.0 mJ
1.5 mJ
Eon*
1.0 mJ
Eoff
0.5 mJ
0mJ
0A
20A
40A
60A
0.0 mJ
80A
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery
Ets*
2mJ
Eon*
1mJ
Eoff
3Ω
6Ω
9Ω
12Ω
15Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=50A,
Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=6.8Ω,
Dynamic test circuit in Figure E)
0Ω
D=0.5
-1
10 K/W
0.2
0.1
0.05
0.02
-2
10 K/W
0.01
R,(K/W)
0.116
0.0729
0.0543
0.0386
0.0173
τ, (s)
0.0895
2.45E-02
1.95E-03
2.07E-04
1.05E-05
R1
R2
single pulse
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
-3
0mJ
10 K/W
0°C
50°C
1µs
100°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=50A, RG=6.8Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
10µs
100µs
1ms
10ms
100ms
tP, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = tp / T)
7
Rev. 2.3
Nov 09
SGW50N60HS
Ciss
12V
480V
120V
9V
6V
Coss
Crss
3V
100pF
0V
0nC
50nC
100nC 150nC 200nC 250nC
0V
15µs
10µs
tSC,
5µs
0µs
10V
11V
12V
13V
20V
700A
600A
500A
400A
300A
200A
100A
0A
14V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Power Semiconductors
10V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=50 A)
SHORT CIRCUIT WITHSTAND TIME
1nF
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
15V
10V
12V
14V
16V
18V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
8
Rev. 2.3
Nov 09
SGW50N60HS
Power Semiconductors
9
Rev. 2.3
Nov 09
SGW50N60HS
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Power Semiconductors
Figure E. Dynamic test circuit
Leakage inductance Lσ =55nH
and Stray capacity C σ =40pF.
10
Rev. 2.3
Nov 09
SGW50N60HS
Published by
Infineon Technologies AG
81726 Munich, Germany
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Power Semiconductors
11
Rev. 2.3
Nov 09