SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGW50N60HS VCE IC 600V 50A Eoff25 Tj Marking 0.88mJ 150°C G50N60HS Package PG-TO-247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value 600 Unit V A TC = 25°C 100 TC = 100°C 50 Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area - 150 Avalanche energy single pulse IC = 50A, VCC=50V, RGE=25Ω start TJ=25°C EAS 280 mJ Gate-emitter voltage static transient (tp<1µs, D<0.05) VGE ±20 ±30 V Short circuit withstand time2) tSC 10 µs Ptot 416 W Operating junction and storage temperature Tj , Tstg -55...+150 °C Time limited operating junction temperature for t < 150h Tj(tl) 175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 VCE ≤ 600V, Tj ≤ 150°C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.3 Nov 09 SGW50N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.3 K/W RthJA 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 50 0µA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 50A T j = 25° C - 2.8 3.15 T j = 15 0° C - 3.15 - 3 4 5 Gate-emitter threshold voltage VGE(th) I C = 1mA ,V C E = V G E Zero gate voltage collector current ICES V C E = 600V ,V G E = 0V µA T j = 25° C - - 40 - 3000 T j = 15 0° C - Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 50A - 31 - S Input capacitance Ciss V C E = 25V, - 2572 - pF Output capacitance Coss V G E = 0V, - 245 - Reverse transfer capacitance Crss f= 1 M Hz - 158 - Gate charge QGate V C C = 4 80V, I C = 50A - 179 - nC - 13 - nH - 471 - A Dynamic Characteristic V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E = 1 5V,t S C ≤10µs V C C ≤ 600V, T j ≤ 150° C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.3 Nov 09 SGW50N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 47 - - 32 - - 310 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , R G = 6. 8Ω L σ 1) = 55nH, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery2). - 16 - - 1.08 - - 0.88 - - 1.96 - ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1 2 T j = 15 0° C V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , R G = 1. 8Ω L σ 1 ) = 60nH, C σ 1 ) = 40pF Energy losses include “tail” and diode reverse recovery2). T j = 15 0° C V C C = 4 00V, I C = 50A, V G E = 0/ 1 5V , R G = 6. 8Ω L σ 1 ) = 60nH, 1) C σ = 40pF Energy losses include “tail” and diode reverse recovery2). - 50 - - 28 - - 225 - - 14 - - 1 - - 0.90 - - 1.9 - - 48 - - 31 - - 350 - - 20 - - 1.5 - - 1.1 - - 2.6 - ns mJ ns mJ Leakage inductance L σ and Stray capacity C σ due to test circuit in Figure E. Diode used in this test is IDP45E60 Power Semiconductors 3 Rev. 2.3 Nov 09 SGW50N60HS 2µs 120A 100A T C=110°C 80A 60A Ic 40A 10µs 10A 50µs 1ms 10ms Ic 20A tP=1µs 100A T C=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 140A 1A DC 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 6.8Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C; VGE=15V) 100A 90A IC, COLLECTOR CURRENT 250W 150W Ptot, POWER DISSIPATION 350W 80A 70A 60A 50A 40A 30A 20A 50W 10A 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.3 Nov 09 SGW50N60HS VGE=19V 15V 13V 11V 9V 7V 120A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 90A 60A 0V 1V 2V 3V 60A 0A 4V 120A 90A 60A TJ=150°C 30A 25°C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 90A 30A 30A 0A V GE=19V 15V 13V 11V 9V 7V IC=100A 4,0V 3,5V IC=50A 3,0V 2,5V IC=25A 2,0V 1,5V 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.3 Nov 09 SGW50N60HS t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns tf td(on) td(off) 100 ns td(on) tf tr tr 10ns 0A 20A 40A 60A 10 ns 80A t, SWITCHING TIMES td(off) 100ns td(on) tr tf 10ns 25°C 50°C 75°C 100°C 3Ω 6Ω 9Ω 12Ω 15Ω 5,5V 5,0V 4,5V 4,0V 3,5V max. 3,0V 2,5V typ. 2,0V 1,5V 1,0V -50°C 125°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=50A, RG=6.8Ω, Dynamic test circuit in Figure E) Power Semiconductors 0Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=50A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER TRSHOLD VOLTAGE IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=6.8Ω, Dynamic test circuit in Figure E) min. 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1mA) 6 Rev. 2.3 Nov 09 SGW50N60HS *) Eon and E ts include losses due to diode recovery E ts* 4mJ E on* 3mJ 2mJ Eoff 1mJ E, SWITCHING ENERGY LOSSES 5mJ E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery 3.5 mJ 3.0 mJ 2.5 mJ Ets* 2.0 mJ 1.5 mJ Eon* 1.0 mJ Eoff 0.5 mJ 0mJ 0A 20A 40A 60A 0.0 mJ 80A E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery Ets* 2mJ Eon* 1mJ Eoff 3Ω 6Ω 9Ω 12Ω 15Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=50A, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=6.8Ω, Dynamic test circuit in Figure E) 0Ω D=0.5 -1 10 K/W 0.2 0.1 0.05 0.02 -2 10 K/W 0.01 R,(K/W) 0.116 0.0729 0.0543 0.0386 0.0173 τ, (s) 0.0895 2.45E-02 1.95E-03 2.07E-04 1.05E-05 R1 R2 single pulse C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -3 0mJ 10 K/W 0°C 50°C 1µs 100°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=50A, RG=6.8Ω, Dynamic test circuit in Figure E) Power Semiconductors 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T) 7 Rev. 2.3 Nov 09 SGW50N60HS Ciss 12V 480V 120V 9V 6V Coss Crss 3V 100pF 0V 0nC 50nC 100nC 150nC 200nC 250nC 0V 15µs 10µs tSC, 5µs 0µs 10V 11V 12V 13V 20V 700A 600A 500A 400A 300A 200A 100A 0A 14V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) SHORT CIRCUIT WITHSTAND TIME 1nF c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 15V 10V 12V 14V 16V 18V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 8 Rev. 2.3 Nov 09 SGW50N60HS Power Semiconductors 9 Rev. 2.3 Nov 09 SGW50N60HS τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit Leakage inductance Lσ =55nH and Stray capacity C σ =40pF. 10 Rev. 2.3 Nov 09 SGW50N60HS Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 11 Rev. 2.3 Nov 09