Data Sheet

Freescale Semiconductor, Inc.
Data Sheet: Technical Data
Document Number: KL03P24M48SF0
Rev 4 08/2014
Kinetis KL03 32 KB Flash
MKL03ZxxVFG4
MKL03ZxxVFK4
MKL03Z32CAF4R
48 MHz Cortex-M0+ Based Microcontroller
Supports ultra low power 48 MHz devices with up to 32 KB
Flash.
World's smallest MCU based on ARM® technology. Ideal
solution for Internet of Things edge nodes design with ultra small
form factor and ultra low power consumption. The products
offers:
• Tiny footprint packages, including 1.6 x 2.0 mm2 WLCSP
• Run power consumption as low as 50 µA/MHz
• Static power consumption as low as 2.2 µA with 7.5 µs
wakeup time for full retention and lowest static mode down
to 77 nA in deep sleep
• Highly integrated peripherals, including new boot ROM and
high accurate internal voltage reference, etc
Core
• ARM® Cortex®-M0+ core up to 48 MHz
Memories
• Up to 32 KB program flash memory
• 2 KB SRAM
• 8 KB ROM with build-in bootloader
• 16 bytes regfile
System peripherals
• Nine low-power modes to provide power optimization
based on application requirements
• COP Software watchdog
• Low-leakage wakeup unit
• SWD debug interface and Micro Trace Buffer
• Bit Manipulation Engine
Clocks
• 48 MHz high accuracy internal reference clock
• 8/2 MHz low power internal reference clock
• 32 kHz to 40 kHz crystal oscillator
• 1 kHz LPO clock
Operating Characteristics
• Voltage range: 1.71 to 3.6 V
• Flash write voltage range: 1.71 to 3.6 V
16-pin QFN (FG)
3 x 3 x 0.65 Pitch 0.5
mm
24-pin QFN (FK)
4 x 4 x 0.65 Pitch 0.5
mm
20 WLCSP (AF)
2 x 1.61 x 0.56 Pitch 0.4 mm
• Temperature range (ambient): -40 to 105°C for QFN
packages; -40 to 85°C for WLCSP packages
Human-machine interface
• General-purpose input/output up to 22
Communication interfaces
• One 8-bit SPI module
• One LPUART module
• One I2C module supporting up to 1 Mbit/s, with
double buffer
Analog Modules
• 12-bit SAR ADC with internal voltage reference, up
to 818 ksps and 7 channels
• High-speed analog comparator containing a 6-bit
DAC and programmable reference input
• 1.2 V voltage reference (Vref)
Timers
• Two 2-channel Timer/PWM modules
• One low-power timer
• Real time clock
Security and integrity modules
• 80-bit unique identification number per chip
Freescale reserves the right to change the detail specifications as may be required to
permit improvements in the design of its products. © 2014 Freescale Semiconductor,
Inc. All rights reserved.
Ordering Information1
Part Number
Memory
Maximum number of I\O's
Flash (KB)
SRAM (KB)
MKL03Z8VFG4(R)
8
2
14
MKL03Z16VFG4(R)
16
2
14
MKL03Z32VFG4(R)
32
2
14
MKL03Z32CAF4R
32
2
18
MKL03Z8VFK4(R)
8
2
22
MKL03Z16VFK4(R)
16
2
22
MKL03Z32VFK4(R)
32
2
22
1. To confirm current availability of ordererable part numbers, go to http://www.freescale.com and perform a part number
search.
Related Resources
Type
Description
Resource
Selector Guide
The Freescale Solution Advisor is a web-based tool that features
interactive application wizards and a dynamic product selector.
Solution Advisor
Product Brief
The Product Brief contains concise overview/summary information to KL03PB1
enable quick evaluation of a device for design suitability.
Reference
Manual
The Reference Manual contains a comprehensive description of the
structure and function (operation) of a device.
KL03P24M48SF0RM1
Data Sheet
The Data Sheet includes electrical characteristics and signal
connections.
KL03P24M48SF01
Chip Errata
The chip mask set Errata provides additional or corrective
information for a particular device mask set.
KL03Z_1N86K1
Package
drawing
Package dimensions are provided in package drawings.
QFN 16-pin: 98ASA00525D1
QFN 24-pin: 98ASA00602D1
WLCSP 20-pin: 98ASA00676D1
1. To find the associated resource, go to http://www.freescale.com and perform a search using this term.
Figure 1 shows the functional modules in the chip.
2
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Kinetis KL03 Family
ARM Cortex-M0+
Core
System
Internal
watchdog
SWD
interfaces
BME
Interrupt
controller
Memories and
Memory Interfaces
Program
flash
RAM
ROM
Clocks
Low
frequency
oscillator
Internal
reference
clocks
LPO
MTB
Register
file
Security
Analog
Timers
Unique ID
12-bit ADC
x1
Timers
2x2ch
and Integrity
Analog
comparator
with
6-bit DAC
x1
Low Power
Timer
Communication
Interfaces
2
I C
x1
Human-Machine
Interface (HMI)
GPIOs
with
interrupt
Low power
UART
x1
RTC
VREF
SPI
x1
Figure 1. Functional block diagram
Kinetis KL03 32 KB Flash, Rev4 08/2014.
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Freescale Semiconductor, Inc.
Table of Contents
1 Ratings.................................................................................... 5
1.1 Thermal handling ratings................................................. 5
1.2 Moisture handling ratings................................................ 5
1.3 ESD handling ratings....................................................... 5
1.4 Voltage and current operating ratings............................. 5
2 General................................................................................... 6
2.1 AC electrical characteristics.............................................6
2.2 Nonswitching electrical specifications..............................6
2.2.1 Voltage and current operating requirements....... 7
2.2.2 LVD and POR operating requirements................7
2.2.3 Voltage and current operating behaviors.............8
2.2.4 Power mode transition operating behaviors........ 9
2.2.5 Power consumption operating behaviors............ 10
2.2.6 EMC radiated emissions operating behaviors..... 24
2.2.7 Designing with radiated emissions in mind..........25
2.2.8 Capacitance attributes.........................................25
2.3 Switching specifications...................................................25
2.3.1 Device clock specifications..................................25
2.3.2 General switching specifications......................... 26
2.4 Thermal specifications..................................................... 26
2.4.1 Thermal operating requirements......................... 26
2.4.2 Thermal attributes................................................26
3 Peripheral operating requirements and behaviors.................. 27
3.1 Core modules.................................................................. 27
3.1.1 SWD electricals .................................................. 27
3.2 System modules.............................................................. 29
3.3 Clock modules................................................................. 29
3.3.1 MCG-Lite specifications.......................................29
3.3.2 Oscillator electrical specifications........................30
3.4 Memories and memory interfaces................................... 31
3.4.1 Flash electrical specifications.............................. 31
3.5 Security and integrity modules........................................ 33
3.6 Analog............................................................................. 33
4
Freescale Semiconductor, Inc.
4
5
6
7
8
9
3.6.1 ADC electrical specifications............................... 33
3.6.2 CMP and 6-bit DAC electrical specifications....... 37
3.6.3 Voltage reference electrical specifications.......... 39
3.7 Timers..............................................................................40
3.8 Communication interfaces............................................... 40
3.8.1 SPI switching specifications................................ 41
3.8.2 Inter-Integrated Circuit Interface (I2C) timing...... 45
3.8.3 UART...................................................................46
Dimensions............................................................................. 46
4.1 Obtaining package dimensions....................................... 46
Pinout...................................................................................... 47
5.1 KL03 signal multiplexing and pin assignments................ 47
5.2 KL03 pinouts....................................................................48
Ordering parts......................................................................... 50
6.1 Determining valid orderable parts....................................50
Part identification.....................................................................50
7.1 Description.......................................................................50
7.2 Format............................................................................. 51
7.3 Fields............................................................................... 51
7.4 Example...........................................................................51
Terminology and guidelines.................................................... 52
8.1 Definition: Operating requirement....................................52
8.2 Definition: Operating behavior......................................... 52
8.3 Definition: Attribute.......................................................... 53
8.4 Definition: Rating............................................................. 53
8.5 Result of exceeding a rating............................................ 54
8.6 Relationship between ratings and operating
requirements....................................................................54
8.7 Guidelines for ratings and operating requirements..........54
8.8 Definition: Typical value...................................................55
8.9 Typical value conditions.................................................. 56
Revision history.......................................................................56
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Ratings
1 Ratings
1.1 Thermal handling ratings
Table 1. Thermal handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
TSTG
Storage temperature
–55
150
°C
1
TSDR
Solder temperature, lead-free
—
260
°C
2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.2 Moisture handling ratings
Table 2. Moisture handling ratings
Symbol
MSL
Description
Moisture sensitivity level
Min.
Max.
Unit
Notes
—
3
—
1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.3 ESD handling ratings
Table 3. ESD handling ratings
Symbol
Description
Min.
Max.
Unit
Notes
VHBM
Electrostatic discharge voltage, human body model
–2000
+2000
V
1
VCDM
Electrostatic discharge voltage, charged-device
model
–500
+500
V
2
Latch-up current at ambient temperature of 105 °C
–100
+100
mA
3
ILAT
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human
Body Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
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General
1.4 Voltage and current operating ratings
Table 4. Voltage and current operating ratings
Symbol
Description
Min.
Max.
Unit
VDD
Digital supply voltage
–0.3
3.8
V
IDD
Digital supply current
—
120
mA
VIO
IO pin input voltage
–0.3
VDD + 0.3
V
Instantaneous maximum current single pin limit (applies to
all port pins)
–25
25
mA
VDD – 0.3
VDD + 0.3
V
ID
VDDA
Analog supply voltage
2 General
2.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
VIH
Input Signal
High
Low
80%
50%
20%
Midpoint1
Fall Time
VIL
Rise Time
The midpoint is VIL + (VIH - VIL) / 2
Figure 2. Input signal measurement reference
All digital I/O switching characteristics, unless otherwise specified, assume the output
pins have the following characteristics.
• CL=30 pF loads
• Slew rate disabled
• Normal drive strength
2.2 Nonswitching electrical specifications
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
2.2.1 Voltage and current operating requirements
Table 5. Voltage and current operating requirements
Symbol
Description
Min.
Max.
Unit
VDD
Supply voltage
1.71
3.6
V
VDDA
Analog supply voltage
1.71
3.6
V
—
VDD – VDDA VDD-to-VDDA differential voltage
–0.1
0.1
V
—
VSS – VSSA VSS-to-VSSA differential voltage
–0.1
0.1
V
—
VIH
VIL
Input high voltage
—
• 2.7 V ≤ VDD ≤ 3.6 V
0.7 × VDD
—
V
• 1.7 V ≤ VDD ≤ 2.7 V
0.75 × VDD
—
V
Input low voltage
—
• 2.7 V ≤ VDD ≤ 3.6 V
—
0.35 × VDD
V
• 1.7 V ≤ VDD ≤ 2.7 V
—
0.3 × VDD
V
0.06 × VDD
—
V
–5
—
mA
VHYS
Input hysteresis
IICIO
IO pin negative DC injection current—single pin
Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents of 16
contiguous pins
• Negative current injection
VRAM
—
1
• VIN < VSS–0.3V
IICcont
Notes
VDD voltage required to retain RAM
—
–25
—
mA
1.2
—
V
—
1. All I/O pins are internally clamped to VSS through a ESD protection diode. There is no diode connection to VDD. If VIN
greater than VIO_MIN (= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If
this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting
resistor is calculated as R = (VIO_MIN - VIN)/|IICIO|.
2.2.2 LVD and POR operating requirements
Table 6. VDD supply LVD and POR operating requirements
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VPOR
Falling VDD POR detect voltage
0.8
1.1
1.5
V
—
VLVDH
Falling low-voltage detect threshold — high
range (LVDV = 01)
2.48
2.56
2.64
V
—
Low-voltage warning thresholds — high range
VLVW1H
• Level 1 falling (LVWV = 00)
VLVW2H
• Level 2 falling (LVWV = 01)
1
2.62
2.70
2.78
V
2.72
2.80
2.88
V
Table continues on the next page...
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Freescale Semiconductor, Inc.
General
Table 6. VDD supply LVD and POR operating requirements (continued)
Symbol
Min.
Typ.
Max.
Unit
VLVW3H
Description
• Level 3 falling (LVWV = 10)
2.82
2.90
2.98
V
VLVW4H
• Level 4 falling (LVWV = 11)
2.92
3.00
3.08
V
—
±60
—
mV
—
1.54
1.60
1.66
V
—
VHYSH
Low-voltage inhibit reset/recover hysteresis —
high range
VLVDL
Falling low-voltage detect threshold — low
range (LVDV=00)
Low-voltage warning thresholds — low range
VLVW1L
• Level 1 falling (LVWV = 00)
VLVW2L
• Level 2 falling (LVWV = 01)
VLVW3L
• Level 3 falling (LVWV = 10)
VLVW4L
• Level 4 falling (LVWV = 11)
VHYSL
Low-voltage inhibit reset/recover hysteresis —
low range
Notes
1
1.74
1.80
1.86
V
1.84
1.90
1.96
V
1.94
2.00
2.06
V
2.04
2.10
2.16
V
—
±40
—
mV
—
VBG
Bandgap voltage reference
0.97
1.00
1.03
V
—
tLPO
Internal low power oscillator period — factory
trimmed
900
1000
1100
μs
—
1. Rising thresholds are falling threshold + hysteresis voltage
2.2.3 Voltage and current operating behaviors
Table 7. Voltage and current operating behaviors
Symbol
VOH
Description
Min.
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –2.5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –10 mA
IOHT
Output high current total for all ports
VOL
Output low voltage — Normal drive pad
Notes
1, 2
VDD – 0.5
—
V
VDD – 0.5
—
V
Output high voltage — High drive pad (except
RESET)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –20 mA
VOL
Unit
Output high voltage — Normal drive pad (except
RESET)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –5 mA
VOH
Max.
1, 2
VDD – 0.5
—
V
VDD – 0.5
—
V
—
100
mA
—
1
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 2.5 mA
—
0.5
V
Output low voltage — High drive pad
1
Table continues on the next page...
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Table 7. Voltage and current operating behaviors (continued)
Symbol
Min.
Max.
Unit
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 20 mA
—
0.5
V
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 10 mA
—
0.5
V
Output low current total for all ports
—
100
mA
—
IIN
Input leakage current (per pin) for full temperature
range
—
1
μA
3
IIN
Input leakage current (per pin) at 25 °C
—
0.025
μA
3
IIN
Input leakage current (total all pins) for full
temperature range
—
41
μA
3
IOZ
Hi-Z (off-state) leakage current (per pin)
—
1
μA
—
RPU
Internal pullup resistors
20
50
kΩ
4
IOLT
Description
Notes
1. I/O have both high drive and normal drive capability selected by the associated PTx_PCRn[DSE] control bit. All other
GPIOs are normal drive only.
2. The reset pin only contains an active pull down device when configured as the RESET signal or as a GPIO. When
configured as a GPIO output, it acts as a pseudo open drain output.
3. Measured at VDD = 3.6 V
4. Measured at VDD supply voltage = VDD min and Vinput = VSS
2.2.4 Power mode transition operating behaviors
All specifications except tPOR and VLLSx→RUN recovery times in the following
table assume this clock configuration:
• CPU and system clocks = 48 MHz
• Bus and flash clock = 24 MHz
• HIRC clock mode
VLLSx→RUN recovery uses LIRC clock mode at the default CPU and system
frequency of 8 MHz, and a bus and flash clock frequency of 4 MHz.
Table 8. Power mode transition operating behaviors
Symbol
tPOR
Description
After a POR event, amount of time from the
point VDD reaches 1.8 V to execution of the first
instruction across the operating temperature
range of the chip.
Min.
Typ.
Max.
Unit
Note
—
—
300
μs
1
—
• VLLS0 → RUN
—
152
166
μs
—
• VLLS1 → RUN
—
152
166
μs
Table continues on the next page...
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Freescale Semiconductor, Inc.
General
Table 8. Power mode transition operating behaviors (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Note
—
• VLLS3 → RUN
—
93
104
μs
—
• VLPS → RUN
—
7.5
8
μs
—
• STOP → RUN
—
7.5
8
μs
1. Normal boot (FTFA_FOPT[LPBOOT]=11).
2.2.5 Power consumption operating behaviors
Table 9. KL03 QFN packages power consumption operating behaviors
Symbol
IDDA
Description
Analog supply current
IDD_RUNCO Running CoreMark in flash in compute operation
mode—48M HIRC mode, 48 MHz core / 24 MHz
flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUNCO Running While(1) loop in flash in compute
operation mode—48M HIRC mode, 48 MHz
core / 24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in flash all peripheral clock disable,
24 MHz core/12 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
Min.
Typ.
Max.1
Unit
Notes
—
—
See note
mA
2
3
—
5.49
5.71
—
5.62
5.84
mA
3
—
5.16
5.37
—
5.27
5.48
mA
3
—
6.03
6.27
—
6.16
6.41
mA
3
—
3.71
3.86
—
3.81
3.96
mA
3
—
2.47
2.57
—
2.58
2.68
mA
Table continues on the next page...
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Table 9. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock enable 48
MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in flash all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in Flash all peripheral clock
disable, 24 MHz core/12 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
disable, 12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
IDD_VLPRCO Very-low-power run While(1) loop in flash in
compute operation mode— 2 MHz LIRC mode,
2 MHz core/0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPRCO Very-low-power-run While(1) loop in SRAM in
compute operation mode— 8 MHz LIRC mode,
4 MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
Typ.
Max.1
Unit
Notes
3
—
6.43
6.69
—
6.56
6.82
mA
—
—
5.71
5.94
—
5.82
6.05
mA
—
—
3.3
3.43
—
3.4
3.54
mA
—
—
2.28
2.37
—
2.38
2.48
mA
—
—
6.1
6.34
—
6.22
6.47
mA
—
—
3.14
3.23
—
3.27
3.36
mA
—
—
3.54
3.63
—
3.67
3.76
mA
—
—
500
750
μA
—
—
188
217
μA
Table continues on the next page...
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General
Table 9. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_VLPRCO Very-low-power run While(1) loop in SRAM in
compute operation mode:—2 MHz LIRC mode,
2 MHz core / 0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_WAIT
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 125 kHz core / 31.25 kHz flash,
VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock enable, 2 MHz core / 0.5 MHz flash, VDD =
3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM in all
peripheral clock disable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM all
peripheral clock enable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM in all peripheral
clock disable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM all peripheral
clock disable, 125 kHz core / 31.25 kHz flash,
VDD = 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM all peripheral
clock enable, 2 MHz core / 0.5 MHz flash, VDD =
3.0 V
• at 25 °C
Wait mode current—core disabled, 48 MHz
system/24 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
Typ.
Max.1
Unit
Notes
—
—
82
123
μA
—
—
503
754
μA
—
—
60
90
μA
—
—
516
774
μA
—
—
209
350
μA
—
—
229
370
μA
—
—
93
140
μA
—
—
31
81
μA
—
—
103
154
μA
—
—
1.4
1.94
mA
Table continues on the next page...
12
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Table 9. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_WAIT
Wait mode current—core disabled, 24 MHz
system/12 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
Typ.
Max.1
Unit
Notes
—
—
1.02
1.24
mA
IDD_VLPW
Very-low-power run wait current, core disabled,
4 MHz system/ 1 MHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
—
121
181
μA
—
IDD_VLPW
Very-low-power run wait current, core disabled,
2 MHz system/ 0.5 MHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
—
59
97
μA
—
IDD_VLPW
Very-low-power run wait current, core disabled,
125 kHz system/ 31.25 kHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
—
28
42
μA
—
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
12 MHz bus and flash, VDD = 3.0 V
—
—
1.53
2.03
mA
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
flash doze enabled, 12 MHz bus, VDD = 3.0 V
—
—
IDD_STOP
Stop mode current at 3.0 V
• at 25 °C and below
• at 85 °C
• at 105 °C
Very-low-power stop mode current at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLPS
Very-low-power stop mode current at 1.8 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current, all
peripheral disable, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
1.18
mA
—
• at 50 °C
IDD_VLPS
0.881
—
158
175.7
—
164
179.48
—
187
199.54
—
219
236.43
μA
—
—
2.2
2.71
—
3.9
6.63
—
13.9
18.25
—
28.4
36.59
μA
—
—
2.2
2.674
—
3.8
6.44
—
13.2
17.37
—
27.8
35.54
μA
—
—
1.08
1.17
—
1.4
1.52
—
3.45
3.96
—
7.02
8.19
μA
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev4 08/2014.
13
Freescale Semiconductor, Inc.
General
Table 9. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_VLLS3 Very-low-leakage stop mode 3 current with RTC
current, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current with RTC
current, at 1.8 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current all
peripheral disabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
• at 105 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
• at 105 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 1.8 V
• at 25 °C and below
• at 50°C
• at 85°C
• at 105 °C
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled (SMC_STOPCTRL[PORPO]
= 0) at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
Typ.
Max.1
Unit
Notes
—
—
1.47
1.56
—
1.82
1.94
—
3.93
4.44
—
7.6
8.77
μA
—
—
1.33
1.42
—
1.65
1.77
—
3.56
4.07
—
6.92
8.09
μA
—
—
566
690
—
788
839
—
2270
2600
—
4980
5820
nA
—
—
969
1059
—
1200
1251
—
2740
3070
—
5610
6450
nA
—
—
826
916
—
1040
1091
—
2400
2730
—
4910
5750
nA
—
—
265
373
—
467
512.9
—
1920
2256
—
4540
5395
nA
Table continues on the next page...
14
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Table 9. KL03 QFN packages power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled (SMC_STOPCTRL[PORPO]
= 1) at 3 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
Typ.
Max.1
Unit
Notes
4
—
77
350
—
255
465.70
—
1640
1994
—
4080
4956
nA
1. The maximum values represent characterized results equivalent to the mean plus three times the standard deviation
(mean + 3 sigma).
2. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device.
See each module's specification for its supply current.
3. MCG_Lite configured for HIRC mode. CoreMark benchmark compiled using IAR 7.10 with optimization level high,
optimized for balanced.
4. No brownout
Table 10. KL03 WLCSP package power consumption operating behaviors
Symbol
IDDA
Description
Analog supply current
IDD_RUNCO Running CoreMark in flash in compute
operation mode—48M HIRC mode, 48 MHz
core / 24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUNCO Running While(1) loop in flash in compute
operation mode—48M HIRC mode, 48 MHz
core / 24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in flash all peripheral clock disable,
24 MHz core/12 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable
12 MHz core/6 MHz flash, VDD = 3.0 V
Min.
Typ.
Max.1
Unit
Notes
—
—
See note
mA
2
3
—
5.49
5.71
—
5.59
5.81
mA
3
—
5.16
5.37
—
5.24
5.45
mA
3
—
6.03
6.27
—
6.13
6.38
mA
3
—
3.71
3.86
—
3.78
3.93
mA
3
—
2.47
2.57
mA
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev4 08/2014.
15
Freescale Semiconductor, Inc.
General
Table 10. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
• at 25 °C
Min.
Typ.
Max.1
—
2.55
2.65
Unit
Notes
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock enable
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in flash all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0
V
• at 25 °C
3
—
6.43
6.69
—
6.53
6.79
mA
—
—
5.71
5.94
—
5.79
6.02
mA
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in Flash all peripheral clock
disable, 24 MHz core/12 MHz flash, VDD = 3.0
V
• at 25 °C
—
—
3.3
3.43
—
3.37
3.50
mA
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
disable, 12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0
V
• at 25 °C
—
—
2.28
2.37
—
2.35
2.44
mA
—
—
6.1
6.34
—
6.19
6.44
mA
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0
V
• at 25 °C
—
—
3.14
3.23
—
3.24
3.33
mA
• at 85 °C
IDD_RUN
Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0
V
• at 25 °C
—
—
3.54
3.63
—
3.64
3.73
mA
• at 85 °C
Table continues on the next page...
16
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Table 10. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
Min.
IDD_VLPRCO Very-low-power run While(1) loop in flash in
compute operation mode— 2 MHz LIRC mode,
2 MHz core/0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPRCO Very-low-power-run While(1) loop in SRAM in
compute operation mode— 8 MHz LIRC mode,
4 MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPRCO Very-low-power run While(1) loop in SRAM in
compute operation mode:—2 MHz LIRC mode,
2 MHz core / 0.5 MHz flash, VDD = 3.0 V
• at 25 °C
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
IDD_VLPR
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock disable, 125 kHz core / 31.25 kHz flash,
VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 2 MHz
LIRC mode, While(1) loop in flash all peripheral
clock enable, 2 MHz core / 0.5 MHz flash, VDD
= 3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM in all
peripheral clock disable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current— 8 MHz
LIRC mode, While(1) loop in SRAM all
peripheral clock enable, 4 MHz core / 1 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz
LIRC mode, While(1) loop in SRAM in all
peripheral clock disable, 2 MHz core / 0.5 MHz
flash, VDD = 3.0 V
• at 25 °C
Very-low-power run mode current—2 MHz
LIRC mode, While(1) loop in SRAM all
peripheral clock disable, 125 kHz core / 31.25
kHz flash, VDD = 3.0 V
• at 25 °C
Typ.
Max.1
Unit
Notes
—
—
500
750
μA
—
—
188
217
μA
—
—
82
123
μA
—
—
503
754
μA
—
—
60
90
μA
—
—
516
774
μA
—
—
209
350
μA
—
—
229
370
μA
—
—
93
140
μA
—
—
31
Very-low-power run mode current—2 MHz
LIRC mode, While(1) loop in SRAM all
81
μA
—
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev4 08/2014.
17
Freescale Semiconductor, Inc.
General
Table 10. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
peripheral clock enable, 2 MHz core / 0.5 MHz
flash, VDD = 3.0 V
• at 25 °C
IDD_WAIT
IDD_WAIT
Wait mode current—core disabled, 48 MHz
system/24 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
Wait mode current—core disabled, 24 MHz
system/12 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
Min.
Typ.
Max.1
Unit
—
103
154
μA
Notes
—
—
1.4
1.94
mA
—
—
1.02
1.24
mA
IDD_VLPW Very-low-power run wait current, core disabled,
4 MHz system/ 1 MHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
—
121
181
μA
—
IDD_VLPW Very-low-power run wait current, core disabled,
2 MHz system/ 0.5 MHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
—
59
97
μA
—
IDD_VLPW Very-low-power run wait current, core disabled,
125 kHz system/ 31.25 kHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
—
28
42
μA
—
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
12 MHz bus and flash, VDD = 3.0 V
—
—
1.53
2.03
mA
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
flash doze enabled, 12 MHz bus, VDD = 3.0 V
—
—
IDD_STOP
Stop mode current at 3.0 V
• at 25 °C and below
• at 85 °C
Very-low-power stop mode current at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
IDD_VLPS
1.18
mA
—
• at 50 °C
IDD_VLPS
0.881
Very-low-power stop mode current at 1.8 V
• at 25 °C and below
• at 50 °C
• at 85 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current, all
peripheral disable, at 3.0 V
• at 25 °C and below
—
158
175.7
—
164
179.48
—
187
199.54
μA
—
—
2.2
2.71
—
3.9
6.63
—
13.9
18.25
μA
—
—
2.2
2.674
—
3.8
6.44
—
13.2
17.37
μA
—
μA
—
1.08
1.17
—
1.4
1.52
Table continues on the next page...
18
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Table 10. KL03 WLCSP package power consumption operating behaviors (continued)
Symbol
Description
• at 50 °C
Min.
Typ.
Max.1
—
3.45
3.96
Unit
Notes
• at 85 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current with
RTC current, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
IDD_VLLS3 Very-low-leakage stop mode 3 current with
RTC current, at 1.8 V
• at 25 °C and below
• at 50 °C
• at 85 °C
IDD_VLLS1 Very-low-leakage stop mode 1 current all
peripheral disabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 85°C
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 1.8 V
• at 25 °C and below
• at 50°C
• at 85°C
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled
(SMC_STOPCTRL[PORPO] = 0) at 3.0 V
• at 25 °C and below
• at 50 °C
—
—
1.47
1.56
—
1.82
1.94
—
3.93
4.44
μA
—
—
1.33
1.42
—
1.65
1.77
—
3.56
4.07
μA
—
—
566
690
—
788
839
—
2270
2600
nA
—
—
969
1059
—
1200
1251
—
2740
3070
nA
—
—
826
916
—
1040
1091
—
2400
2730
nA
—
—
265
373
—
467
512.9
—
1920
2256
nA
• at 85 °C
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled
(SMC_STOPCTRL[PORPO] = 1) at 3 V
• at 25 °C and below
• at 50 °C
• at 85 °C
Kinetis KL03 32 KB Flash, Rev4 08/2014.
4
—
77
350
—
255
465.70
—
1640
1994
nA
19
Freescale Semiconductor, Inc.
General
1. The maximum values represent characterized results equivalent to the mean plus three times the standard deviation
(mean + 3 sigma).
2. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
3. MCG_Lite configured for HIRC mode. CoreMark benchmark compiled using IAR 7.10 with optimization level high,
optimized for balanced.
4. No brownout
Table 11. Low power mode peripheral adders — typical value
Symbol
Description
Temperature (°C)
Unit
-40
25
50
70
85
1051
ILIRC8MHz
8 MHz internal reference clock (LIRC)
adder. Measured by entering STOP or
VLPS mode with 8 MHz LIRC enabled,
MCG_SC[FCRDIV]=000b,
MCG_MC[LIRC_DIV2]=000b.
68
68
68
68
68
68
µA
ILIRC2MHz
2 MHz internal reference clock (LIRC)
adder. Measured by entering STOP
mode with the 2 MHz LIRC enabled,
MCG_SC[FCRDIV]=000b,
MCG_MC[LIRC_DIV2]=000b.
27
27
27
27
27
27
µA
IEREFSTEN32KHz
External 32 kHz crystal clock adder by
means of the OSC0_CR[EREFSTEN
and EREFSTEN] bits. Measured by
entering all modes with the crystal
enabled.
• VLLS1
• VLLS3
• VLPS
• STOP
340
410
460
470
480
600
340
410
460
490
530
600
340
420
480
570
610
850
340
420
480
570
610
850
30
30
30
85
100
200
ILPTMR
LPTMR peripheral adder measured by
placing the device in VLLS1 mode with
LPTMR enabled using LPO.
nA
nA
ICMP
CMP peripheral adder measured by
placing the device in VLLS1 mode with
CMP enabled using the 6-bit DAC and a
single external input for compare.
Includes 6-bit DAC power consumption.
15
15
15
15
15
15
µA
IRTC
RTC peripheral adder measured by
placing the device in VLLS1 mode with
external 32 kHz crystal enabled by
means of the RTC_CR[OSCE] bit and
the RTC ALARM set for 1 minute.
Includes ERCLK32K (32 kHz external
crystal) power consumption.
340
440
440
480
520
620
nA
IUART
UART peripheral adder measured by
placing the device in STOP or VLPS
mode with selected clock source waiting
for RX data at 115200 baud rate.
Table continues on the next page...
20
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Table 11. Low power mode peripheral adders — typical value (continued)
Symbol
Description
Includes selected clock source power
consumption.
• LIRC8M (8 MHz internal
reference clock)
• LIRC2M (2 MHz internal
reference clock)
ITPM
TPM peripheral adder measured by
placing the device in STOP or VLPS
mode with selected clock source
configured for output compare
generating 100 Hz clock signal. No load
is placed on the I/O generating the
clock signal. Includes selected clock
source and I/O switching currents.
• LIRC8M (8 MHz internal
reference clock)
• LIRC2M (2 MHz internal
reference clock)
Temperature (°C)
Unit
-40
25
50
70
85
1051
85
85
85
85
85
85
28
28
28
28
28
28
µA
µA
93
93
93
93
93
93
35
35
35
35
35
35
IBG
Bandgap adder when BGEN bit is set
and device is placed in VLPx or VLLSx
mode.
45
45
45
45
45
45
µA
IADC
ADC peripheral adder combining the
measured values at VDD and VDDA by
placing the device in STOP or VLPS
mode. ADC is configured for low power
mode using the internal clock and
continuous conversions.
340
340
340
340
340
340
µA
1. For QFN packages only.
2.2.5.1
Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
•
•
•
•
MCG-Lite in HIRC for run mode, and LIRC for VLPR mode
No GPIOs toggled
Code execution from flash
For the ALLOFF curve, all peripheral clocks are disabled except FTFA
Kinetis KL03 32 KB Flash, Rev4 08/2014.
21
Freescale Semiconductor, Inc.
General
Run Mode Current vs Core Frequency
Temperature=25, VDD=3, MCG Mode=HIRC, while loop located in Flash
7.00E-03
6.00E-03
Current Consumption on VDD (A)
5.00E-03
All Peripheral CLK Gates
4.00E-03
ALLOFF
ALLON
3.00E-03
2.00E-03
1.00E-03
000.00E+00
'1-1
'1-1
'1-1
'1-1
1-1
'1-2
3
6
8
12
24
48
CLK Ratio
Flash - Core
Core Freq (MHz)
Figure 3. Run mode supply current vs. core frequency (loop located in flash)
22
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
General
Run Mode Current vs Core Frequency
Temperature=25, VDD=3, MCG Mode=HIRC, while loop located in SRAM
4.00E-03
3.50E-03
Current Consumption on VDD (A)
3.00E-03
2.50E-03
All Peripheral CLK Gates
2.00E-03
ALLOFF
ALLON
1.50E-03
1.00E-03
500.00E-06
000.00E+00
'1-1
'1-1
'1-1
'1-1
1-1
'1-2
3
6
8
12
24
48
CLK Ratio
Flash - Core
Core Freq (MHz)
Figure 4. Run mode supply current vs. core frequency (loop located in SRAM)
Kinetis KL03 32 KB Flash, Rev4 08/2014.
23
Freescale Semiconductor, Inc.
General
VLPR Mode Current vs Core Frequency
Temperature=25, VDD=3, MCG=LIRC8M, while loop in SRAM
250.00E-06
Current Consumption on VDD (A)
200.00E-06
150.00E-06
All Peripheral CLK Gates
ALLOFF
ALLON
100.00E-06
50.00E-06
CLK Ratio
Flash - Core
Core Freq (MHz)
000.00E+00
'1-1
'1-2
'1-4
1
2
4
Figure 5. VLPR mode current vs. core frequency (loop in SRAM)
2.2.6 EMC radiated emissions operating behaviors
Table 12. EMC radiated emissions operating behaviors for 24-pin QFN
package
Symbol
Description
Frequency
band
(MHz)
Typ.
Unit
Notes
1, 2
VRE1
Radiated emissions voltage, band 1
0.15–50
5
dBμV
VRE2
Radiated emissions voltage, band 2
50–150
7
dBμV
VRE3
Radiated emissions voltage, band 3
150–500
5
dBμV
VRE4
Radiated emissions voltage, band 4
500–1000
5
dBμV
IEC/SAE level
0.15–1000
N
—
VRE_IEC
2, 3
1. Determined according to IEC 61967-2 (and SAE J1752/3) radiated radio frequency (RF) emissions measurement
standard. Typical Configuration: Appendix B: DUT Software Configuration—2. Typical Configuration.
2. VDD = 3.3 V, TA = 25 °C, firc48m = 48 MHz, fSYS = 48 MHz, fBUS = 24 MHz
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General
3. IEC/SAE Level Maximums: N≤12 dBµV, M≤18 dBµV, L≤24 dBµV, K≤30 dBµV, I ≤ 36 dBµV, H ≤ 42 dBµV, G≤48
dBµV.
2.2.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.freescale.com.
2. Perform a keyword search for “EMC design.”
2.2.8 Capacitance attributes
Table 13. Capacitance attributes
Symbol
CIN
Description
Input capacitance
Min.
Max.
Unit
—
7
pF
Min.
Max.
Unit
2.3 Switching specifications
2.3.1 Device clock specifications
Table 14. Device clock specifications
Symbol
Description
Normal run mode
fSYS
System and core clock
—
48
MHz
fBUS
Bus clock
—
24
MHz
fFLASH
Flash clock
—
24
MHz
fLPTMR
LPTMR clock
—
24
MHz
VLPR and VLPS modes1
fSYS
System and core clock
—
4
MHz
fBUS
Bus clock
—
1
MHz
Flash clock
—
1
MHz
—
24
MHz
—
16
MHz
fFLASH
clock2
fLPTMR
LPTMR
fERCLK
External reference clock
fLPTMR_ERCLK LPTMR external reference clock
fTPM
fUART0
—
16
MHz
TPM asynchronous clock
—
8
MHz
UART0 asynchronous clock
—
8
MHz
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Freescale Semiconductor, Inc.
General
1. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing
specification for any other module. These same frequency limits apply to VLPS, whether VLPS was entered from RUN
or from VLPR.
2. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.
2.3.2 General switching specifications
These general-purpose specifications apply to all signals configured for GPIO and
UART signals.
Table 15. General switching specifications
Description
Min.
Max.
Unit
Notes
GPIO pin interrupt pulse width (digital glitch filter disabled) —
Synchronous path
1.5
—
Bus clock
cycles
1
External RESET and NMI pin interrupt pulse width —
Asynchronous path
100
—
ns
2
GPIO pin interrupt pulse width — Asynchronous path
16
—
ns
2
Port rise and fall time
—
36
ns
3
1. The greater synchronous and asynchronous timing must be met.
2. This is the shortest pulse that is guaranteed to be recognized.
3. 75 pF load
2.4 Thermal specifications
2.4.1 Thermal operating requirements
Table 16. Thermal operating requirements of WLCSP package
Symbol
Description
Min.
Max.
Unit
TJ
Die junction temperature
–40
95
°C
TA
Ambient temperature
–40
85
°C
Table 17. Thermal operating requirements of other packages
Symbol
Description
Min.
Max.
Unit
TJ
Die junction temperature
–40
125
°C
TA
Ambient temperature
–40
105
°C
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Peripheral operating requirements and behaviors
2.4.2 Thermal attributes
Table 18. Thermal attributes
Board type
Symbol
Single-layer (1S)
RθJA
Four-layer (2s2p)
Description
16 QFN
20
WLCSP
24 QFN
Unit
Notes
Thermal resistance, junction to
ambient (natural convection)
64.2
69.8
60.7
°C/W
1,2
RθJA
Thermal resistance, junction to
ambient (natural convection)
53.3
57.5
48.5
°C/W
1,2,3
Single-layer (1S)
RθJMA
Thermal resistance, junction to
ambient (200 ft./min. air speed)
55.4
62.03
51.0
°C/W
1,3
Four-layer (2s2p)
RθJMA
Thermal resistance, junction to
ambient (200 ft./min. air speed)
48.9
54.3
43.6
°C/W
1,3
—
RθJB
Thermal resistance, junction to
board
33.5
51.64
30.4
°C/W
4
—
RθJC
Thermal resistance, junction to
case
20.9
0.73
9.8
°C/W
5
—
ΨJT
Thermal characterization
parameter, junction to package
top outside center (natural
convection)
0.2
0.2
0.2
°C/W
6
—
ΨJB
Thermal characterization
parameter, junction to package
bottom outside center (natural
convection)
22.4
―
21.8
°C/W
7
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is
measured on the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
6. Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is
written as Psi-JT.
7. Thermal characterization parameter indicating the temperature difference between package bottom center and the
junction temperature per JEDEC JESD51-12. When Greek letters are not available, the thermal characterization
parameter is written as Psi-JB.
3 Peripheral operating requirements and behaviors
3.1 Core modules
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Peripheral operating requirements and behaviors
3.1.1 SWD electricals
Table 19. SWD full voltage range electricals
Symbol
J1
Description
Min.
Max.
Unit
Operating voltage
1.71
3.6
V
0
25
MHz
1/J1
—
ns
20
—
ns
SWD_CLK frequency of operation
• Serial wire debug
J2
SWD_CLK cycle period
J3
SWD_CLK clock pulse width
• Serial wire debug
J4
SWD_CLK rise and fall times
—
3
ns
J9
SWD_DIO input data setup time to SWD_CLK rise
10
—
ns
J10
SWD_DIO input data hold time after SWD_CLK rise
0
—
ns
J11
SWD_CLK high to SWD_DIO data valid
—
32
ns
J12
SWD_CLK high to SWD_DIO high-Z
5
—
ns
J2
J3
J3
SWD_CLK (input)
J4
J4
Figure 6. Serial wire clock input timing
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Peripheral operating requirements and behaviors
SWD_CLK
J9
SWD_DIO
J10
Input data valid
J11
SWD_DIO
Output data valid
J12
SWD_DIO
J11
SWD_DIO
Output data valid
Figure 7. Serial wire data timing
3.2 System modules
There are no specifications necessary for the device's system modules.
3.3 Clock modules
3.3.1 MCG-Lite specifications
Table 20. HIRC48M specification
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VDD
Supply voltage
1.71
—
3.6
V
—
IDD48M
Supply current
—
400
500
μA
—
firc48m
Internal reference frequency
—
48
—
MHz
—
Δfirc48m_ol_lv total deviation of IRC48M frequency at low voltage
(VDD=1.71V-1.89V) over temperature
—
%firc48m
—
± 0.5
±1.5
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Peripheral operating requirements and behaviors
Table 20. HIRC48M specification (continued)
Symbol
Description
Min.
Δfirc48m_ol_hv total deviation of IRC48M frequency at high voltage
(VDD=1.89V-3.6V) over temperature
Jcyc_irc48m
tirc48mst
Typ.
Max.
Unit
Notes
—
—
± 0.5
±1.0
%firc48m
Period Jitter (RMS)
—
35
150
ps
—
Startup time
—
2
3
μs
1
1. IRC48M startup time is defined as the time between clock enablement and clock availability for system use. Enable the
clock by setting MCG_MC[HIRCEN] = 1. See reference manual for details.
Table 21. LIRC8M/2M specification
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VDD
Supply voltage
1.08
—
1.47
V
—
T
Temperature range
-40
—
125
°C
—
IDD_2M
Supply current in 2 MHz mode
—
14
17
µA
—
IDD_8M
Supply current in 8 MHz mode
—
30
35
µA
—
fIRC_2M
Output frequency
—
2
—
MHz
—
fIRC_8M
Output frequency
—
8
—
MHz
—
fIRC_T_2M
Output frequency range (trimmed)
—
—
±3
%fIRC
VDD≥1.89 V
fIRC_T_8M
Output frequency range (trimmed)
—
—
±3
%fIRC
VDD≥1.89 V
Tsu_2M
Startup time
—
—
12.5
µs
—
Tsu_8M
Startup time
—
—
12.5
µs
—
3.3.2 Oscillator electrical specifications
3.3.2.1
Oscillator DC electrical specifications
Table 22. Oscillator DC electrical specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
VDD
Supply voltage
1.71
—
3.6
V
—
IDDOSC
Supply current — low-power mode
• 32 kHz
1
—
500
—
nA
Cx
EXTAL load capacitance
—
—
—
2, 3
Cy
XTAL load capacitance
—
—
—
2, 3
RF
Feedback resistor — low-frequency, low-power
mode
—
—
—
MΩ
2, 4
RS
Series resistor — low-frequency, low-power
mode
—
—
—
kΩ
—
Table continues on the next page...
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Peripheral operating requirements and behaviors
Table 22. Oscillator DC electrical specifications (continued)
Symbol
5
Vpp
1.
2.
3.
4.
5.
Description
Peak-to-peak amplitude of oscillation (oscillator
mode) — low-frequency, low-power mode
Min.
Typ.
Max.
Unit
Notes
—
0.6
—
V
—
VDD=3.3 V, Temperature =25 °C
See crystal or resonator manufacturer's recommendation
Cx,Cy can be provided by using either the integrated capacitors or by using external components.
When low power mode is selected, RF is integrated and must not be attached externally.
The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to
any other devices.
3.3.2.2
Symbol
fosc_lo
tdc_extal
tcst
Oscillator frequency specifications
Table 23. Oscillator frequency specifications
Description
Min.
Typ.
Max.
Unit
Notes
Oscillator crystal or resonator frequency — low
frequency mode
32
—
40
kHz
—
Input clock duty cycle (external clock mode)
40
50
60
%
—
Crystal startup time — 32 kHz low-frequency,
low-power mode
—
750
—
ms
1, 2
1. Proper PC board layout procedures must be followed to achieve specifications.
2. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S
register being set.
3.4 Memories and memory interfaces
3.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
3.4.1.1
Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps
are active and do not include command overhead.
Table 24. NVM program/erase timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
thvpgm4
Longword Program high-voltage time
—
7.5
18
μs
—
thversscr
Sector Erase high-voltage time
—
13
113
ms
1
thversall
Erase All high-voltage time
—
52
452
ms
1
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Peripheral operating requirements and behaviors
1. Maximum time based on expectations at cycling end-of-life.
3.4.1.2
Flash timing specifications — commands
Table 25. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1sec1k
Read 1s Section execution time (flash sector)
—
—
60
μs
1
tpgmchk
Program Check execution time
—
—
45
μs
1
trdrsrc
Read Resource execution time
—
—
30
μs
1
tpgm4
Program Longword execution time
—
65
145
μs
—
tersscr
Erase Flash Sector execution time
—
14
114
ms
2
trd1all
Read 1s All Blocks execution time
—
—
0.5
ms
—
trdonce
Read Once execution time
—
—
25
μs
1
Program Once execution time
—
65
—
μs
—
tersall
Erase All Blocks execution time
—
61
500
ms
2
tvfykey
Verify Backdoor Access Key execution time
—
—
30
μs
1
tpgmonce
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3.4.1.3
Flash high voltage current behaviors
Table 26. Flash high voltage current behaviors
Symbol
Description
IDD_PGM
IDD_ERS
3.4.1.4
Symbol
Min.
Typ.
Max.
Unit
Average current adder during high voltage
flash programming operation
—
2.5
6.0
mA
Average current adder during high voltage
flash erase operation
—
1.5
4.0
mA
Reliability specifications
Table 27. NVM reliability specifications
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
50
—
years
—
tnvmretp1k
Data retention after up to 1 K cycles
20
100
—
years
—
nnvmcycp
Cycling endurance
10 K
50 K
—
cycles
2
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a
constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in
Engineering Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C.
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Peripheral operating requirements and behaviors
3.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
3.6 Analog
3.6.1 ADC electrical specifications
All ADC channels meet the 12-bit single-ended accuracy specifications.
3.6.1.1
12-bit ADC operating conditions
Table 28. 12-bit ADC operating conditions
Symbol
Description
Conditions
Min.
Typ.1
Max.
Unit
Notes
VDDA
Supply voltage
Absolute
1.71
—
3.6
V
—
ΔVDDA
Supply voltage
Delta to VDD (VDD – VDDA)
-100
0
+100
mV
2
ΔVSSA
Ground voltage
Delta to VSS (VSS – VSSA)
-100
0
+100
mV
2
VREFH
ADC reference
voltage high
1.13
VDDA
VDDA
V
3
VREFL
ADC reference
voltage low
VSSA
VSSA
VSSA
V
3
VADIN
Input voltage
VREFL
—
VREFH
V
—
CADIN
Input
capacitance
—
4
5
pF
—
RADIN
Input series
resistance
—
2
5
kΩ
—
RAS
Analog source
resistance
(external)
• 8-bit / 10-bit / 12-bit
modes
12-bit modes
4
fADCK < 4 MHz
—
—
5
kΩ
fADCK
ADC conversion ≤ 12-bit mode
clock frequency
1.0
—
18.0
MHz
Crate
ADC conversion ≤ 12-bit modes
rate
No ADC hardware averaging
5
6
20.000
—
818.330
Ksps
Continuous conversions
enabled, subsequent
conversion time
1. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 1.0 MHz, unless otherwise stated. Typical values are for
reference only, and are not tested in production.
2. DC potential difference.
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Peripheral operating requirements and behaviors
3. For packages without dedicated VREFH and VREFL pins, VREFH is internally tied to VDDA, and VREFL is internally tied to
VSSA.
4. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as
possible. The results in this data sheet were derived from a system that had < 8 Ω analog source resistance. The
RAS/CAS time constant should be kept to < 1 ns.
5. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear.
6. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
ZADIN
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
Pad
leakage
due to
input
protection
ZAS
RAS
ADC SAR
ENGINE
RADIN
VADIN
CAS
VAS
RADIN
INPUT PIN
RADIN
INPUT PIN
RADIN
INPUT PIN
CADIN
Figure 8. ADC input impedance equivalency diagram
3.6.1.2
12-bit ADC electrical characteristics
Table 29. 12-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA)
Symbol
Conditions1.
Description
Min.
Typ.2
Max.
Unit
Notes
0.215
—
1.7
mA
3
• ADLPC = 1, ADHSC = 0
1.2
2.4
3.9
MHz
• ADLPC = 1, ADHSC = 1
2.4
4.0
6.1
MHz
tADACK =
1/fADACK
• ADLPC = 0, ADHSC = 0
3.0
5.2
7.3
MHz
• ADLPC = 0, ADHSC = 1
4.4
6.2
9.5
MHz
LSB4
IDDA_ADC Supply current
fADACK
ADC
asynchronous
clock source
Sample Time
TUE
See Reference Manual chapter for sample times
Total
unadjusted error
• 12-bit modes
—
±6
—
• <12-bit modes
—
±3
±6
5
Table continues on the next page...
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Table 29. 12-bit ADC characteristics (VREFH = VDDA, VREFL = VSSA) (continued)
Symbol
DNL
Description
Differential nonlinearity
INL
Integral nonlinearity
EFS
Full-scale error
EQ
Quantization
error
EIL
Input leakage
error
Conditions1.
Typ.2
Min.
Max.
Unit
Notes
–1.1 to
+1.9
LSB4
5
LSB4
5
LSB4
VADIN =
VDDA5
• 12-bit modes
—
±0.9
• <12-bit modes
—
±0.4
• 12-bit modes
—
±1.5
• <12-bit modes
—
±0.5
–0.7 to
+0.5
• 12-bit modes
—
5
—
• <12-bit modes
—
2
3
• 12-bit modes
—
—
±0.5
–0.3 to 0.5
–2.7 to
+1.9
LSB4
IIn × RAS
mV
IIn =
leakage
current
(refer to
the MCU's
voltage
and
current
operating
ratings)
VTEMP25
Temp sensor
slope
Across the full temperature range
of the device
1.55
1.62
1.69
mV/°C
6
Temp sensor
voltage
25 °C
706
716
726
mV
6
1. All accuracy numbers assume the ADC is calibrated with VREFH = VDDA
2. Typical values assume VDDA = 3.0 V, Temp = 25 °C, fADCK = 2.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low
power). For lowest power operation, ADC_CFG1[ADLPC] must be set, the ADC_CFG2[ADHSC] bit must be clear with
1 MHz ADC conversion clock speed.
4. 1 LSB = (VREFH - VREFL)/2N
5. ADC conversion clock < 16 MHz, Max hardware averaging (AVGE = %1, AVGS = %11)
6. ADC conversion clock < 3 MHz
Table 30. 12-bit ADC characteristics (VREFH = VREFO, VREFL = VSSA)
Symbol
Description
Conditions1.
Min.
Typ.2
Max.
Unit
Notes
0.215
—
1.7
mA
3
• ADLPC = 1, ADHSC = 0
1.2
2.4
3.9
MHz
• ADLPC = 1, ADHSC = 1
2.4
4.0
6.1
MHz
tADACK =
1/fADACK
• ADLPC = 0, ADHSC = 0
3.0
5.2
7.3
MHz
• ADLPC = 0, ADHSC = 1
4.4
6.2
9.5
MHz
IDDA_ADC Supply current
fADACK
ADC
asynchronous
clock source
Table continues on the next page...
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Peripheral operating requirements and behaviors
Table 30. 12-bit ADC characteristics (VREFH = VREFO, VREFL = VSSA) (continued)
Symbol
TUE
DNL
INL
EFS
Description
Conditions1.
Sample Time
See Reference Manual chapter for sample times
Min.
Typ.2
Max.
Unit
Notes
LSB4
5
LSB4
5
LSB4
5
LSB4
VADIN =
VDDA5
Total
unadjusted
error
• 12-bit modes
—
±4
±6.8
• <12-bit modes
—
±1.4
±2.1
Differential nonlinearity
• 12-bit modes
—
±0.7
–1.1 to
+1.9
• <12-bit modes
—
±0.2
• 12-bit modes
—
±1.0
• <12-bit modes
—
±0.5
–0.7 to
+0.5
• 12-bit modes
—
–4
–5.4
• <12-bit modes
—
–1.4
–1.8
• 12-bit modes
—
—
±0.5
Integral nonlinearity
Full-scale error
EQ
Quantization
error
EIL
Input leakage
error
–0.3 to
0.5
–2.7 to
+1.9
IIn × RAS
LSB4
mV
IIn =
leakage
current
(refer to
the MCU's
voltage
and
current
operating
ratings)
VTEMP25
Temp sensor
slope
Across the full temperature range
of the device
1.55
1.62
1.69
mV/°C
6
Temp sensor
voltage
25 °C
706
716
726
mV
6
1. All accuracy numbers assume the ADC is calibrated with VREFH = VREFO
2. Typical values assume VREFO = 3.0 V, Temp = 25 °C, fADCK = 2.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low
power). For lowest power operation, ADC_CFG1[ADLPC] must be set, the ADC_CFG2[ADHSC] bit must be clear with 1
MHz ADC conversion clock speed.
4. 1 LSB = (VREFH - VREFL)/2N
5. ADC conversion clock < 16 MHz, Max hardware averaging (AVGE = %1, AVGS = %11)
6. ADC conversion clock < 3 MHz
36
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Peripheral operating requirements and behaviors
ENOB
Typical ADC 12-bit Single Ended ENOB vs ADC Clock
11.9
11.8
11.7
11.6
11.5
11.4
11.3
11.2
11.1
11
10.9
10.8
10.7
10.6
10.5
10.4
10.3
10.2
10.1
10
100Hz, 90% FS Sine Input
Hardware Averaging Disabled
Averaging of 8 samples
Averaging of 32 samples
0
2
4
6
8
10
12
14
16
18
20
22
ADC Clock Frequency (MHz)
Figure 9. Typical ENOB vs. ADC_CLK for 12-bit single-ended mode
3.6.2 CMP and 6-bit DAC electrical specifications
Table 31. Comparator and 6-bit DAC electrical specifications
Symbol
Description
Min.
Typ.
Max.
Unit
VDD
Supply voltage
1.71
—
3.6
V
IDDHS
Supply current, High-speed mode (EN=1,
PMODE=1)
—
—
200
μA
IDDLS
Supply current, low-speed mode (EN=1, PMODE=0)
—
—
20
μA
VAIN
Analog input voltage
VSS – 0.3
—
VDD
V
VAIO
Analog input offset voltage
—
—
20
mV
• CR0[HYSTCTR] = 00
—
5
—
mV
• CR0[HYSTCTR] = 01
—
10
—
mV
• CR0[HYSTCTR] = 10
—
20
—
mV
• CR0[HYSTCTR] = 11
—
30
—
mV
VDD – 0.5
—
—
V
VH
Analog comparator
VCMPOh
Output high
VCMPOl
hysteresis1
Output low
—
—
0.5
V
tDHS
Propagation delay, high-speed mode (EN=1,
PMODE=1)
20
50
200
ns
tDLS
Propagation delay, low-speed mode (EN=1,
PMODE=0)
80
250
600
ns
Analog comparator initialization delay2
—
—
40
μs
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev4 08/2014.
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Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 31. Comparator and 6-bit DAC electrical specifications (continued)
Symbol
Description
IDAC6b
Min.
Typ.
Max.
Unit
—
7
—
μA
6-bit DAC current adder (enabled)
INL
6-bit DAC integral non-linearity
–0.5
—
0.5
LSB3
DNL
6-bit DAC differential non-linearity
–0.3
—
0.3
LSB
1. Typical hysteresis is measured with input voltage range limited to 0.6 to VDD–0.6 V.
2. Comparator initialization delay is defined as the time between software writes to change control inputs (Writes to
CMP_DACCR[DACEN], CMP_DACCR[VRSEL], CMP_DACCR[VOSEL], CMP_MUXCR[PSEL], and
CMP_MUXCR[MSEL]) and the comparator output settling to a stable level.
3. 1 LSB = Vreference/64
0.08
0.07
CMP Hystereris (V)
0.06
HYSTCTR
Setting
0.05
00
0.04
01
10
11
0.03
0.02
0.01
0
0.1
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
Vin level (V)
Figure 10. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 0)
38
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Peripheral operating requirements and behaviors
0.18
0.16
0.14
CMP Hysteresis (V)
0.12
HYSTCTR
Setting
0.1
00
01
10
11
0.08
0.06
0.04
0.02
0
0.1
0.4
0.7
1
1.3
1.6
1.9
Vin level (V)
2.5
2.2
2.8
3.1
Figure 11. Typical hysteresis vs. Vin level (VDD = 3.3 V, PMODE = 1)
3.6.3 Voltage reference electrical specifications
Table 32. VREF full-range operating requirements
Symbol
Description
Min.
Max.
Unit
Notes
VDDA
Supply voltage
1.71
3.6
V
—
Operating temperature
range of the device
°C
—
100
nF
1, 2
TA
Temperature
CL
Output load capacitance
1. CL must be connected to VREF_OUT if the VREF_OUT functionality is being used for either an internal or external
reference.
2. The load capacitance should not exceed +/-25% of the nominal specified CL value over the operating temperature
range of the device.
Table 33 is tested under the condition of setting VREF_TRM[CHOPEN],
VREF_SC[REGEN] and VREF_SC[ICOMPEN] bits to 1.
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Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 33. VREF full-range operating behaviors
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
Vout
Voltage reference output with factory trim at
nominal VDDA and temperature=25C
1.1915
1.195
1.1977
V
1
Vout
Voltage reference output — factory trim
1.1584
—
1.2376
V
1
Vout
Voltage reference output — user trim
1.193
—
1.197
V
1
Vstep
Voltage reference trim step
—
0.5
—
mV
1
Vtdrift
Temperature drift (Vmax -Vmin across the full
temperature range: 0 to 70°C)
—
—
50
mV
1
Ac
Aging coefficient
—
—
400
uV/yr
—
Ibg
Bandgap only current
—
—
80
µA
1
Ilp
Low-power buffer current
—
—
360
uA
1
Ihp
High-power buffer current
—
—
1
mA
1
µV
1, 2
ΔVLOAD
Load regulation
• current = ± 1.0 mA
—
200
—
Tstup
Buffer startup time
—
—
100
µs
—
Vvdrift
Voltage drift (Vmax -Vmin across the full voltage
range)
—
2
—
mV
1
1. See the chip's Reference Manual for the appropriate settings of the VREF Status and Control register.
2. Load regulation voltage is the difference between the VREF_OUT voltage with no load vs. voltage with defined load
Table 34. VREF limited-range operating requirements
Symbol
Description
Min.
Max.
Unit
Notes
TA
Temperature
0
50
°C
—
Table 35. VREF limited-range operating behaviors
Symbol
Vout
Description
Voltage reference output with factory trim
Min.
Max.
Unit
Notes
1.173
1.225
V
—
3.7 Timers
See General switching specifications.
3.8 Communication interfaces
40
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Peripheral operating requirements and behaviors
3.8.1 SPI switching specifications
The Serial Peripheral Interface (SPI) provides a synchronous serial bus with master
and slave operations. Many of the transfer attributes are programmable. The following
tables provide timing characteristics for classic SPI timing modes. See the SPI chapter
of the chip's Reference Manual for information about the modified transfer formats
used for communicating with slower peripheral devices.
All timing is shown with respect to 20% VDD and 80% VDD thresholds, unless noted,
as well as input signal transitions of 3 ns and a 30 pF maximum load on all SPI pins.
Table 36. SPI master mode timing on slew rate disabled pads
Num.
Symbol
1
fop
2
tSPSCK
3
tLead
4
tLag
5
tWSPSCK
6
tSU
7
Min.
Max.
Unit
Note
fperiph/2048
fperiph/2
Hz
1
2 x tperiph
2048 x
tperiph
ns
2
Enable lead time
1/2
—
tSPSCK
—
Enable lag time
1/2
—
tSPSCK
—
tperiph – 30
1024 x
tperiph
ns
—
Data setup time (inputs)
22
—
ns
—
tHI
Data hold time (inputs)
0
—
ns
—
8
tv
Data valid (after SPSCK edge)
—
10
ns
—
9
tHO
Data hold time (outputs)
0
—
ns
—
10
tRI
Rise time input
—
tperiph – 25
ns
—
tFI
Fall time input
tRO
Rise time output
—
25
ns
—
tFO
Fall time output
11
Description
Frequency of operation
SPSCK period
Clock (SPSCK) high or low time
1. For SPI0, fperiph is the bus clock (fBUS).
2. tperiph = 1/fperiph
Table 37. SPI master mode timing on slew rate enabled pads
Num.
Symbol
1
fop
2
tSPSCK
3
tLead
4
tLag
Description
Min.
Max.
Unit
Note
fperiph/2048
fperiph/2
Hz
1
2 x tperiph
2048 x
tperiph
ns
2
Enable lead time
1/2
—
tSPSCK
—
Enable lag time
1/2
—
tSPSCK
—
Frequency of operation
SPSCK period
Table continues on the next page...
Kinetis KL03 32 KB Flash, Rev4 08/2014.
41
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 37. SPI master mode timing on slew rate enabled pads (continued)
Num.
Symbol
Description
5
tWSPSCK
Clock (SPSCK) high or low time
6
tSU
7
tHI
8
tv
9
10
11
Min.
Max.
Unit
Note
tperiph – 30
1024 x
tperiph
ns
—
Data setup time (inputs)
96
—
ns
—
Data hold time (inputs)
0
—
ns
—
Data valid (after SPSCK edge)
—
52
ns
—
tHO
Data hold time (outputs)
0
—
ns
—
tRI
Rise time input
—
tperiph – 25
ns
—
tFI
Fall time input
tRO
Rise time output
—
36
ns
—
tFO
Fall time output
1. For SPI0, fperiph is the bus clock (fBUS).
2. tperiph = 1/fperiph
SS1
(OUTPUT)
3
2
SPSCK
(CPOL=0)
(OUTPUT)
11
10
11
6
7
MSB IN2
BIT 6 . . . 1
LSB IN
8
MOSI
(OUTPUT)
4
5
SPSCK
(CPOL=1)
(OUTPUT)
MISO
(INPUT)
10
5
MSB OUT2
BIT 6 . . . 1
9
LSB OUT
1. If configured as an output.
2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB.
Figure 12. SPI master mode timing (CPHA = 0)
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Peripheral operating requirements and behaviors
SS1
(OUTPUT)
2
3
SPSCK
(CPOL=0)
(OUTPUT)
5
SPSCK
(CPOL=1)
(OUTPUT)
5
6
MISO
(INPUT)
11
10
11
4
7
MSB IN2
BIT 6 . . . 1
LSB IN
9
8
MOSI
(OUTPUT)
10
PORT DATA MASTER MSB OUT2
BIT 6 . . . 1
MASTER LSB OUT
PORT DATA
1.If configured as output
2. LSBF = 0. For LSBF = 1, bit order is LSB, bit 1, ..., bit 6, MSB.
Figure 13. SPI master mode timing (CPHA = 1)
Table 38. SPI slave mode timing on slew rate disabled pads
Num.
Symbol
1
fop
2
tSPSCK
3
tLead
4
tLag
5
tWSPSCK
6
tSU
7
Min.
Max.
Unit
Note
0
fperiph/4
Hz
1
4 x tperiph
—
ns
2
Enable lead time
1
—
tperiph
—
Enable lag time
1
—
tperiph
—
tperiph – 30
—
ns
—
Data setup time (inputs)
3
—
ns
—
tHI
Data hold time (inputs)
7
—
ns
—
8
ta
Slave access time
23
tperiph
ns
3
9
tdis
Slave MISO disable time
23
tperiph
ns
4
10
tv
Data valid (after SPSCK edge)
—
25.7
ns
—
11
tHO
Data hold time (outputs)
0
—
ns
—
12
tRI
Rise time input
—
tperiph – 25
ns
—
tFI
Fall time input
tRO
Rise time output
—
25
ns
—
tFO
Fall time output
13
1.
2.
3.
4.
38
Description
Frequency of operation
SPSCK period
Clock (SPSCK) high or low time
For SPI0, fperiph is the bus clock (fBUS).
tperiph = 1/fperiph
Time to data active from high-impedance state
Hold time to high-impedance state
Kinetis KL03 32 KB Flash, Rev4 08/2014.
<<CLASSIFICATION>>
<<NDA MESSAGE>>
43
Freescale Semiconductor, Inc.
Peripheral operating requirements and behaviors
Table 39. SPI slave mode timing on slew rate enabled pads
Num.
Symbol
1
fop
2
tSPSCK
3
tLead
Enable lead time
4
tLag
Enable lag time
5
tWSPSCK
6
tSU
7
Frequency of operation
SPSCK period
Min.
Max.
Unit
Note
0
fperiph/4
Hz
1
4 x tperiph
—
ns
2
1
—
tperiph
—
1
—
tperiph
—
tperiph – 30
—
ns
—
Data setup time (inputs)
2
—
ns
—
tHI
Data hold time (inputs)
7
—
ns
—
8
ta
Slave access time
—
tperiph
ns
3
9
tdis
Slave MISO disable time
—
tperiph
ns
4
10
tv
Data valid (after SPSCK edge)
—
122
ns
—
11
tHO
Data hold time (outputs)
0
—
ns
—
12
tRI
Rise time input
—
tperiph – 25
ns
—
tFI
Fall time input
tRO
Rise time output
—
36
ns
—
tFO
Fall time output
13
1.
2.
3.
4.
Description
Clock (SPSCK) high or low time
For SPI0, fperiph is the bus clock (fBUS).
tperiph = 1/fperiph
Time to data active from high-impedance state
Hold time to high-impedance state
SS
(INPUT)
2
12
13
12
13
4
SPSCK
(CPOL=0)
(INPUT)
5
3
SPSCK
(CPOL=1)
(INPUT)
5
9
8
MISO
(OUTPUT)
see
note
SLAVE MSB
6
MOSI
(INPUT)
10
11
11
BIT 6 . . . 1
SLAVE LSB OUT
SEE
NOTE
7
MSB IN
BIT 6 . . . 1
LSB IN
NOTE: Not defined
Figure 14. SPI slave mode timing (CPHA = 0)
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Peripheral operating requirements and behaviors
SS
(INPUT)
4
2
3
SPSCK
(CPOL=0)
(INPUT)
5
SPSCK
(CPOL=1)
(INPUT)
5
see
note
SLAVE
8
MSB OUT
6
MOSI
(INPUT)
13
12
13
11
10
MISO
(OUTPUT)
12
9
BIT 6 . . . 1
SLAVE LSB OUT
BIT 6 . . . 1
LSB IN
7
MSB IN
NOTE: Not defined
Figure 15. SPI slave mode timing (CPHA = 1)
3.8.2 Inter-Integrated Circuit Interface (I2C) timing
Table 40. I2C timing
Characteristic
Symbol
Fast Mode1
Standard Mode
Minimum
Maximum
Minimum
Maximum
Unit
SCL Clock Frequency
fSCL
0
100
0
4002
kHz
Hold time (repeated) START condition.
After this period, the first clock pulse is
generated.
tHD; STA
4
—
0.6
—
µs
LOW period of the SCL clock
tLOW
4.7
—
1.3
—
µs
HIGH period of the SCL clock
tHIGH
4
—
0.6
—
µs
Set-up time for a repeated START
condition
tSU; STA
4.7
—
0.6
—
µs
Data hold time for I2C bus devices
tHD; DAT
03
3.454
05
0.93
µs
tSU; DAT
2506
—
1004, 7
Data set-up time
—
ns
8
Rise time of SDA and SCL signals
tr
—
1000
20 +0.1Cb
300
ns
Fall time of SDA and SCL signals
tf
—
300
20 +0.1Cb7
300
ns
Set-up time for STOP condition
tSU; STO
4
—
0.6
—
µs
Bus free time between STOP and
START condition
tBUF
4.7
—
1.3
—
µs
Pulse width of spikes that must be
suppressed by the input filter
tSP
N/A
N/A
0
50
ns
1. Fast mode is fully supported on all pins at VDD > 2.7 V. If VDD < 2.7 V, only pins that support high drive strength can
support fast mode with maximum bus loading.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
45
Freescale Semiconductor, Inc.
Dimensions
2. The maximum SCL Clock Frequency in Fast mode with maximum bus loading can only achieved when using the High
drive pins (see Voltage and current operating behaviors) or when using the Normal drive pins and VDD ≥ 2.7 V
3. The master mode I2C deasserts ACK of an address byte simultaneously with the falling edge of SCL. If no slaves
acknowledge this address byte, then a negative hold time can result, depending on the edge rates of the SDA and SCL
lines.
4. The maximum tHD; DAT must be met only if the device does not stretch the LOW period (tLOW) of the SCL signal.
5. Input signal Slew = 10 ns and Output Load = 50 pF
6. Set-up time in slave-transmitter mode is 1 IPBus clock period, if the TX FIFO is empty.
7. A Fast mode I2C bus device can be used in a Standard mode I2C bus system, but the requirement tSU; DAT ≥ 250 ns
must then be met. This is automatically the case if the device does not stretch the LOW period of the SCL signal. If such
a device does stretch the LOW period of the SCL signal, then it must output the next data bit to the SDA line trmax + tSU;
2
DAT = 1000 + 250 = 1250 ns (according to the Standard mode I C bus specification) before the SCL line is released.
8. Cb = total capacitance of the one bus line in pF.
SDA
tf
tLOW
tSU; DAT
tr
tf
tHD; STA
tSP
tr
tBUF
SCL
HD; STA
S
tHD; DAT
tHIGH
tSU; STA
tSU; STO
SR
P
S
Figure 16. Timing definition for fast and standard mode devices on the I2C bus
3.8.3 UART
See General switching specifications.
4 Dimensions
4.1 Obtaining package dimensions
Package dimensions are provided in package drawings.
To find a package drawing, go to freescale.com and perform a keyword search for the
drawing’s document number:
If you want the drawing for this package
Then use this document number
16-pin QFN
98ASA00525D
24-pin QFN
98ASA00602D
20-pin WLCSP
98ASA00676D
46
Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Pinout
5 Pinout
5.1 KL03 signal multiplexing and pin assignments
The following table shows the signals available on each pin and the locations of these
pins on the devices supported by this document. The Port Control Module is
responsible for selecting which ALT functionality is available on each pin.
NOTE
PTB3 and PTB4 are true open drain pins. The external
pullup resistor must be added to make them output correct
values in using I2C, GPIO, and LPUART0.
24
QFN
20
WLC
SP
16
QFN
Pin Name
Default
ALT0
ALT1
ALT2
ALT3
ALT4
1
—
—
PTB6/
IRQ_2/
LPTMR0_ALT3
DISABLED
PTB6/
IRQ_2/
LPTMR0_ALT3
TPM1_CH1
2
—
—
PTB7/
IRQ_3
DISABLED
PTB7/
IRQ_3
TPM1_CH0
3
B5
1
VDD
VDD
VDD
4
C5
2
VSS
VSS
VSS
5
C4
3
PTA3
EXTAL0
EXTAL0
PTA3
I2C0_SCL
I2C0_SDA
LPUART0_TX
6
C3
4
PTA4
XTAL0
XTAL0
PTA4
I2C0_SDA
I2C0_SCL
LPUART0_RX
7
D3
5
PTA5/
RTC_CLK_IN
DISABLED
PTA5/
RTC_CLK_IN
TPM0_CH1
SPI0_SS_b
8
D5
6
PTA6
DISABLED
PTA6
TPM0_CH0
SPI0_MISO
TPM_CLKIN1
9
—
—
PTB10
DISABLED
PTB10
TPM0_CH1
SPI0_SS_b
10
—
—
PTB11
DISABLED
PTB11
TPM0_CH0
SPI0_MISO
11
D4
7
PTA7/
IRQ_4
DISABLED
PTA7/
IRQ_4
SPI0_MISO
SPI0_MOSI
12
C1
8
PTB0/
IRQ_5/
LLWU_P4
ADC0_SE9
ADC0_SE9
PTB0/
IRQ_5/
LLWU_P4
EXTRG_IN
SPI0_SCK
I2C0_SCL
13
D1
9
PTB1/
IRQ_6
ADC0_SE8/
CMP0_IN3
ADC0_SE8/
CMP0_IN3
PTB1/
IRQ_6
LPUART0_TX
LPUART0_RX
I2C0_SDA
14
B1
10
PTB2/
IRQ_7
VREF_OUT/
CMP0_IN5
VREF_OUT/
CMP0_IN5
PTB2/
IRQ_7
LPUART0_RX
LPUART0_TX
15
D2
—
PTA8
ADC0_SE3
ADC0_SE3
PTA8
I2C0_SCL
SPI0_MOSI
16
C2
—
PTA9
ADC0_SE2
ADC0_SE2
PTA9
I2C0_SDA
SPI0_SCK
Kinetis KL03 32 KB Flash, Rev4 08/2014.
ALT5
CLKOUT
47
Freescale Semiconductor, Inc.
Pinout
24
QFN
20
WLC
SP
16
QFN
Pin Name
Default
ALT0
17
A1
11
PTB3/
IRQ_10
DISABLED
PTB3/
IRQ_10
I2C0_SCL
LPUART0_TX
18
B2
12
PTB4/
IRQ_11
DISABLED
PTB4/
IRQ_11
I2C0_SDA
LPUART0_RX
19
A2
13
PTB5/
IRQ_12
NMI_b
ADC0_SE1/
CMP0_IN1
PTB5/
IRQ_12
TPM1_CH1
NMI_b
20
B3
—
PTA12/
IRQ_13/
LPTMR0_ALT2
ADC0_SE0/
CMP0_IN0
ADC0_SE0/
CMP0_IN0
PTA12/
IRQ_13/
LPTMR0_ALT2
TPM1_CH0
TPM_CLKIN0
21
A3
—
PTB13/
CLKOUT32K
DISABLED
PTB13/
CLKOUT32K
TPM1_CH1
RTC_CLKOUT
22
A4
14
PTA0/
IRQ_0/
LLWU_P7
SWD_CLK
PTA0/
IRQ_0/
LLWU_P7
TPM1_CH0
SWD_CLK
23
B4
15
PTA1/
IRQ_1/
LPTMR0_ALT1
RESET_b
PTA1/
IRQ_1/
LPTMR0_ALT1
TPM_CLKIN0
RESET_b
24
A5
16
PTA2
SWD_DIO
PTA2
CMP0_OUT
SWD_DIO
ADC0_SE15/
CMP0_IN2
ALT1
ALT2
ALT3
ALT4
ALT5
CLKOUT
5.2 KL03 pinouts
The following figures show the pinout diagrams for the devices supported by this
document. Many signals may be multiplexed onto a single pin. To determine what
signals can be used on which pin, see KL03 signal multiplexing and pin assignments.
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
PTA2
PTA1/IRQ_1/LPTMR0_ALT1
PTA0/IRQ_0/LLWU_P7
PTB13/CLKOUT32K
PTA12/IRQ_13/LPTMR0_ALT2
PTB5/IRQ_12
24
23
22
21
20
19
Pinout
3
16
PTA9
VSS
4
15
PTA8
PTA3
5
14
PTB2/IRQ_7
PTA4
6
13
PTB1/IRQ_6
PTB10
PTA6
PTA5/RTC_CLK_IN
12
VDD
PTB0/IRQ_5/LLWU_P4
PTB3/IRQ_10
11
17
PTA7/IRQ_4
2
10
PTB7/IRQ_3
PTB11
PTB4/IRQ_11
9
18
8
1
7
PTB6/IRQ_2/LPTMR0_ALT3
Figure 17. KL03 24-pin QFN pinout diagram
1
2
3
4
5
A
PTB3
PTB5
PTB13
PTA0
PTA2
B
PTB2
PTB4
PTA12
PTA1
VDD
C
PTB0
PTA9
PTA4
PTA3
VSS
D
PTB1
PTA8
PTA5
PTA7
PTA6
Figure 18. KL03 20-pin WLCSP pinout diagram
Kinetis KL03 32 KB Flash, Rev4 08/2014.
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Freescale Semiconductor, Inc.
PTA2
PTA1/IRQ_1/LPTMR0_ALT1
PTA0/IRQ_0/LLWU_P7
PTB5/IRQ_12
16
15
14
13
Ordering parts
PTA3
3
10
PTB2/IRQ_7
PTA4
4
9
PTB1/IRQ_6
8
PTB3/IRQ_10
PTB0/IRQ_5/LLWU_P4
11
7
2
PTA7/IRQ_4
VSS
6
PTB4/IRQ_11
PTA6
12
5
1
PTA5/RTC_CLK_IN
VDD
Figure 19. KL03 16-pin QFN pinout diagram
6 Ordering parts
6.1 Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable part
numbers for this device, go to freescale.com and perform a part number search for the
following device numbers:
7 Part identification
7.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Part identification
7.2 Format
Part numbers for this device have the following format:
Q KL## A FFF R T PP CC N
7.3 Fields
This table lists the possible values for each field in the part number (not all
combinations are valid):
Table 41. Part number fields descriptions
Field
Description
Values
Q
Qualification status
• M = Fully qualified, general market flow(full
reels for WLCSP)
• P = Prequalification
• K = Fully qualified, general market flow, 100
pieces reels (WLCSP only)
KL##
Kinetis family
• KL03
A
Key attribute
• Z = Cortex-M0+
FFF
Program flash memory size
• 8 = 8 KB
• 16 = 16 KB
• 32 = 32 KB
R
Silicon revision
• (Blank) = Main
• A = Revision after main
T
Temperature range (°C)
• V = –40 to 105
• C = –40 to 85
PP
Package identifier
• FG = 16 QFN (3 mm x 3 mm)
• AF = 20 WLCSP (1.99 mm x 1.61 mm)
• FK = 24 QFN (4 mm x 4 mm)
CC
Maximum CPU frequency (MHz)
• 4 = 48 MHz
N
Packaging type
• R = Tape and reel
• (Blank) = Trays
7.4 Example
This is an example part number:
MKL03Z32VFK4
Kinetis KL03 32 KB Flash, Rev4 08/2014.
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Freescale Semiconductor, Inc.
Terminology and guidelines
8 Terminology and guidelines
8.1 Definition: Operating requirement
An operating requirement is a specified value or range of values for a technical
characteristic that you must guarantee during operation to avoid incorrect operation and
possibly decreasing the useful life of the chip.
8.1.1 Example
This is an example of an operating requirement:
Symbol
VDD
Description
1.0 V core supply
voltage
Min.
0.9
Max.
1.1
Unit
V
8.2 Definition: Operating behavior
Unless otherwise specified, an operating behavior is a specified value or range of
values for a technical characteristic that are guaranteed during operation if you meet the
operating requirements and any other specified conditions.
8.2.1 Example
This is an example of an operating behavior:
Symbol
IWP
Description
Digital I/O weak pullup/ 10
pulldown current
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Freescale Semiconductor, Inc.
Min.
Max.
130
Unit
µA
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Terminology and guidelines
8.3 Definition: Attribute
An attribute is a specified value or range of values for a technical characteristic that
are guaranteed, regardless of whether you meet the operating requirements.
8.3.1 Example
This is an example of an attribute:
Symbol
CIN_D
Description
Input capacitance:
digital pins
Min.
—
Max.
7
Unit
pF
8.4 Definition: Rating
A rating is a minimum or maximum value of a technical characteristic that, if
exceeded, may cause permanent chip failure:
• Operating ratings apply during operation of the chip.
• Handling ratings apply when the chip is not powered.
8.4.1 Example
This is an example of an operating rating:
Symbol
VDD
Description
1.0 V core supply
voltage
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Min.
–0.3
Max.
1.2
Unit
V
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Freescale Semiconductor, Inc.
Terminology and guidelines
8.5 Result of exceeding a rating
Failures in time (ppm)
40
30
The likelihood of permanent chip failure increases rapidly as
soon as a characteristic begins to exceed one of its operating ratings.
20
10
0
Operating rating
Measured characteristic
8.6 Relationship between ratings and operating requirements
ng
ati
r
ing
rat
e
Op
(
)
in.
(m
nt
me
n.)
mi
t
era
Op
ing
e
uir
req
g
tin
era
Op
nt
me
ire
u
req
ax
(m
.)
t
era
Op
ng
ati
ax
(m
.)
r
ing
Fatal range
Degraded operating range
Normal operating range
Degraded operating range
Fatal range
Expected permanent failure
- No permanent failure
- Possible decreased life
- Possible incorrect operation
- No permanent failure
- Correct operation
- No permanent failure
- Possible decreased life
- Possible incorrect operation
Expected permanent failure
–∞
∞
Operating (power on)
dli
n
Ha
ng
ng
ati
)
in.
(m
r
li
nd
Ha
ng
ati
x.)
a
(m
r
ng
Fatal range
Handling range
Fatal range
Expected permanent failure
No permanent failure
Expected permanent failure
–∞
∞
Handling (power off)
8.7 Guidelines for ratings and operating requirements
Follow these guidelines for ratings and operating requirements:
• Never exceed any of the chip’s ratings.
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Freescale Semiconductor, Inc.
Kinetis KL03 32 KB Flash, Rev4 08/2014.
Terminology and guidelines
• During normal operation, don’t exceed any of the chip’s operating requirements.
• If you must exceed an operating requirement at times other than during normal
operation (for example, during power sequencing), limit the duration as much as
possible.
8.8 Definition: Typical value
A typical value is a specified value for a technical characteristic that:
• Lies within the range of values specified by the operating behavior
• Given the typical manufacturing process, is representative of that characteristic
during operation when you meet the typical-value conditions or other specified
conditions
Typical values are provided as design guidelines and are neither tested nor guaranteed.
8.8.1 Example 1
This is an example of an operating behavior that includes a typical value:
Symbol
IWP
Description
Digital I/O weak
pullup/pulldown
current
Min.
10
Typ.
70
Max.
130
Unit
µA
8.8.2 Example 2
This is an example of a chart that shows typical values for various voltage and
temperature conditions:
Kinetis KL03 32 KB Flash, Rev4 08/2014.
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Freescale Semiconductor, Inc.
Revision history
5000
4500
4000
TJ
IDD_STOP (μA)
3500
150 °C
3000
105 °C
2500
25 °C
2000
–40 °C
1500
1000
500
0
0.90
0.95
1.05
1.00
1.10
VDD (V)
8.9 Typical value conditions
Typical values assume you meet the following conditions (or other conditions as
specified):
Table 42. Typical value conditions
Symbol
Description
Value
Unit
TA
Ambient temperature
25
°C
VDD
3.3 V supply voltage
3.3
V
9 Revision history
The following table provides a revision history for this document.
Table 43. Revision history
Rev. No.
Date
3.1
07/2014
Initial public release.
4
08/2014
Changed pinout signal names ADC0_SE5, ADC0_SE6, and ADC0_SE12
to ADC0_SE8, ADC0_SE9 and ADC0_SE15 respectively.
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Freescale Semiconductor, Inc.
Substantial Changes
Kinetis KL03 32 KB Flash, Rev4 08/2014.
How to Reach Us:
Home Page:
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Web Support:
freescale.com/support
Information in this document is provided solely to enable system and
software implementers to use Freescale products. There are no express
or implied copyright licenses granted hereunder to design or fabricate
any integrated circuits based on the information in this document.
Freescale reserves the right to make changes without further notice to
any products herein.
Freescale makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does
Freescale assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages.
“Typical” parameters that may be provided in Freescale data sheets
and/or specifications can and do vary in different applications, and
actual performance may vary over time. All operating parameters,
including “typicals,” must be validated for each customer application by
customer's technical experts. Freescale does not convey any license
under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found
at the following address: freescale.com/SalesTermsandConditions.
Freescale, Freescale logo, Energy Efficient Solutions logo, and Kinetis
are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm.
Off. All other product or service names are the property of their
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Limited (or its subsidiaries) in the EU and/or elsewhere. All rights
reserved.
©2014 Freescale Semiconductor, Inc.
Document Number KL03P24M48SF0
Revision 4 08/2014