SST/U5196NL Series New Product Vishay Siliconix Monolithic N-Channel JFET Duals SST5198NL SST5199NL U5196NL U5197NL U5198NL U5199NL PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) VGS1 - VGS2 Max (mV) U5196NL -0.7 to -4 -50 1 -15 5 U5197NL -0.7 to -4 -50 1 -15 5 SST/U5198NL -0.7 to -4 -50 1 -15 10 SST/U5199NL -0.7 to -4 -50 1 -15 15 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters Anti Latchup Capability Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise High CMRR: 100 dB External Substrate Bias—Avoids Latchup Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal DESCRIPTION The SST/U5196NL series of JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. Pins 4 and 8 of the SST series and pin 4 on the U series part numbers enable the substrate to be connected to a positive, external bias (VDD) to avoid latchup. The U series in the hermetically-sealed TO-78 package is available with full military processing. The SST series SO-8 package provides ease of manufacturing and the symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods. For similar products see the low-noise SST/U401NL series and the low-leakage U421NL/423NL data sheets. TO-78 Narrow Body SOIC S1 1 8 SUBSTRATE D1 2 7 G2 G1 3 6 D2 SUBSTRATE 4 5 S2 S1 G2 1 D1 7 2 3 Top View D2 6 G1 5 S2 4 Marking Codes: SST5198NL - 5198NL SST5199NL - 5199NL CASE, SUBSTRATE Top View U5196NL, U5198NL U5197NL, U5199NL ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 72156 S-03468—Rev. B, 11-Mar-03 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com 7-1 SST/U5196NL Series New Product Vishay Siliconix SPECIFICATIONS FOR U5196NL AND U5197NL (TA = 25_C UNLESS OTHERWISE NOTED) Limits U5196NL Parameter U5197NL Symbol Test Conditions Typa V(BR)GSS IG = -1 A, VDS = 0 V -57 -50 VGS(off) VDS = 20 V, ID = 1 nA -2 -0.7 VDS = 20 V, VGS = 0 V 3 0.7 7 mA VGS = -30 V, VDS = 0 V -10 -25 -25 pA -20 -50 -50 nA -5 -15 -15 pA - 0.8 -15 -15 nA Min Max Min -4 -0.7 7 0.7 Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Gate-Source Voltage IDSS IGSS IG VGS TA = 150_C VDG = 20 V, ID = 200 A TA = 125_C VDG = 20 V, ID = 200 A -50 -4 V -1.5 -0.2 -3.8 -0.2 -3.8 V 3.0 1 4 1 4 mS 50 S 1.6 mS S Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 20 V, VGS = 0 V, f = 1 kHz Noise Figure NF VDS = 20 V, VGS = 0 V f = 1 kHz VDS = 20 V, ID = 200 A f = 1 kHz 8 0.8 50 0.7 1.6 0.7 1 4 4 3 6 6 1 2 2 11 20 20 nV⁄ √Hz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 M 0.5 0.5 dB VDS = 20 V, VGS = 0 V f = 1 MHz pF Matching Differential Gate-Source Voltage |V GS1–V GS2| VDG = 20 V, ID = 200 A 5 5 mV Gate-Source Voltage Differential Change with Temperature |V GS1–V GS2| VDG = 20 V, ID = 200 A TA = -55 to 125_C 5 10 V/_C Saturation Drain Current Ratio Transconductance Ratio T I DSS1 I DSS2 gfs1 gfs2 Differential Output Conductance |g os1–g os2| Differential Gate Current |I G1 * I G2| Common Mode Rejection Ratio www.vishay.com 7-2 CMRR VDS = 20 V, VGS = 0 V 0.98 0.95 1 0.95 1 0.99 0.97 1 0.97 1 VDS = 20 V, ID = 200 A f = 1 kHz 0.1 1 1 S VDG = 20 V, ID = 200 A , TA = 125_C 0.1 5 5 nA VDG = 10 to 20 V, ID = 200 A 100 dB Document Number: 72156 S-03468—Rev. B, 11-Mar-03 SST/U5196NL Series New Product Vishay Siliconix SPECIFICATIONS FOR SST/U5198NL AND SST/U5199NL (TA = 25_C UNLESS OTHERWISE NOTED) Limits SST/U5198NL SST/U5199NL Min Max Min Symbol Test Conditions Typa V(BR)GSS IG = -1 A, VDS = 0 V -57 -50 VGS(off) VDS = 20 V, ID = 1 nA -2 -0.7 -4 -0.7 -4 Saturation Drain Currentb IDSS VDS = 20 V, VGS = 0 V 3 0.7 7 0.7 7 mA -25 -25 pA IGSS VGS = -30 V, VDS = 0 V -10 Gate Reverse Current -20 -50 -50 nA -5 -15 -15 pA - 0.8 -15 -15 nA Parameter Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current TA = 150_C VDG = 20 V, ID = 200 A IG Gate-Source Voltage TA =125_C VDG = 20 V, ID = 200 A VGS -50 V -1.5 -0.2 -3.8 -0.2 -3.8 V 3.0 1 4 1 4 mS 50 S 1.6 mS S Dynamic Common-Source Forward Transconductance gfs VDS = 20 V V, VGS = 0 V, V f = 1 kHz Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss 8 VDS = 20 V, ID = 200 A f = 1 kHz VDS = 20 V, VGS = 0 V, f = 1 MHz 0.8 50 0.7 1.6 0.7 1 4 4 3 6 6 1 2 2 pF Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 20 V, VGS = 0 V, f = 1 kHz 11 nV⁄ √Hz Noise Figure NF VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 M (U Only) 0.5 dB Matching VDG = 20 V, ID = 200 A Differential Gate-Source Voltage |V GS1–V GS2| Gate-Source G t S V Voltage lt Differential Diff ti l Change with Temperature |V GS1–V V GS2| T |V Saturation Drain Current Ratio Transconductance Ratio Differential Output Conductance Differential Gate Current Common Mode Rejection Ratio V I DSS1 I DSS2 gfs1 gfs2 VDG = 20 V V, ID = 200 A A TA = -55 to 125_C SST5198NL 15 SST5199NL 30 SST Only VDS = 20 V V, VGS = 0 V VDS = 20 V, ID = 200 A f = 1 kHz |g os1–g g os2| |I G1 * I G2| CMRR VDG = 20 V, ID = 200 A, TA = 125_C Document Number: 72156 S-03468—Rev. B, 11-Mar-03 1 0.95 1 0.95 1 0.95 1 S 1 1 5 5 0.1 U Only VDG = 10 to 20 V, ID = 200 A Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s duty cycle v3%. 0.95 0.2 U Only SST Only 40 0.97 U Only SST Only 20 mV 0.97 U Only SST Only 15 V/_C U Only | 10 97 nA dB NQP www.vishay.com 7-3 SST/U5196NL Series New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 3 2.6 IDSS gfs 3 2.2 2 1.8 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 1 1.4 0 IG @ ID = 200 A 10 nA TA = 125_C IG - Gate Leakage 4 100 nA gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 5 -1 -2 -3 -4 IGSS @ 125_C 100 pA 50 A 50 A 200 A 10 pA IGSS @ 25_C TA = 25_C 1 pA 1 0 1 nA 0.1 pA -5 0 10 VGS(off) - Gate-Source Cutoff Voltage (V) 20 30 40 VDG - Drain-Gate Voltage (V) Output Characteristics Output Characteristics 5 5 VGS(off) = -3 V VGS = 0 V VGS(off) = -2 V -0.3 V 4 VGS = 0 V 3 -0.2 V -0.4 V 2 -0.6 V -0.8 V 1 ID - Drain Current (mA) ID - Drain Current (mA) 4 -0.6 V 3 -0.9 V -1.2 V 2 -1.5 V -1.8 V 1 -1.0 V -2.1 V -1.2 V 0 0 -1.4 V 0 4 8 12 16 20 0 VDS - Drain-Source Voltage (V) 4 8 -2.4 V 16 12 20 VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 2 2.5 VGS(off) = -2 V VGS = 0 V VGS(off) = -3 V -0.2 V -0.4 V 1.2 -0.6 V -0.8 V 0.8 -1.0 V -1.2 V 0.4 2.0 ID - Drain Current (mA) VGS = 0 V 1.6 ID - Drain Current (mA) 50 -0.3 V -0.6 V -0.9 V 1.5 -1.2 V -1.5 V 1.0 -1.8 V 0.5 -2.1 V -1.4 V 0 0 0.2 0.4 0.6 VDS - Drain-Source Voltage (V) www.vishay.com 7-4 -1.6 V 0.8 -2.4 V 0 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Document Number: 72156 S-03468—Rev. B, 11-Mar-03 SST/U5196NL Series New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current Transfer Characteristics 5 100 VGS(off) = -2 V VDG = 20 V TA = 25_C VDS = 20 V (mV) TA = -55_C 3 VGS1 - VGS2 ID - Drain Current (mA) 4 25_C 2 SST/U5199 10 U5196 125_C 1 0 1 0 -0.5 -1.0 -1.5 -2.0 VGS - Gate-Source Voltage (V) -2.5 0.01 Voltage Differential with Temperature vs. Drain Current 130 ( V/ _C ) VDG = 20 V TA = 25 to 125_C TA = -55 to 25_C CMRR = 20 log 120 CMRR (dB) SST/U5199 t 10 U5196 VDG V GS1 - VGS2 110 VDG = 10 - 20 V 100 5 - 10 V VGS1 - VGS2 1 Common Mode Rejection Ratio vs. Drain Current 100 90 80 1 0.01 0.1 ID - Drain Current (mA) 1 0.01 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( Ω ) 80 60 VGS(off) = -3 V VGS(off) = -2 V 40 AV + 20 g fs R L 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 10 V RL + ID 0 0.01 Document Number: 72156 S-03468—Rev. B, 11-Mar-03 0.1 ID - Drain Current (mA) 1 On-Resistance vs. Drain Current 100 AV - Voltage Gain 0.1 ID - Drain Current (mA) 1k 800 600 VGS(off) = -2 V 400 VGS(off) = -3 V 200 0 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 www.vishay.com 7-5 SST/U5196NL Series New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 C rss - Reverse Feedback Capacitance (pF) C iss - Input Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 4 5V 15 V 2 20 V f = 1 MHz 4 VDS = 0 V 3 5V 2 15 V 1 20 V 0 0 0 -4 VGS -8 -12 -16 - Gate-Source Voltage (V) 0 -20 -4 2.5 VGS(off) = -2 V gos - Output Conductance (µS) VDS = 20 V en - Noise Voltage nV / Hz 16 ID @ 200 A 12 8 VGS = 0 V 4 0 10 100 1k f - Frequency (Hz) 10 k TA = -55_C 1.5 1.0 25_C 0.5 125_C 0 0.01 100 k VDS = 20 V f = 1 kHz 2.0 Common-Source Forward Transconductance vs. Drain Current 0.1 ID - Drain Current (mA) 1 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 1k VGS(off) = -2 V VDS = 20 V f = 1 kHz 2.0 TA = -55_C 1.5 25_C 1.0 0.5 125_C gos 800 8 6 600 400 4 rDS 200 2 rDS @ ID = 100 A, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0 0 0.01 www.vishay.com 0.1 ID - Drain Current (mA) 1 g os - Output Conductance ( S) rDS(on) - Drain-Source On-Resistance ( Ω ) 2.5 gfs - Forward Transconductance (mS) -20 Output Conductance vs. Drain Current Equivalent Input Noise Voltage vs. Frequency 20 7-6 -8 -12 -16 VGS - Gate-Source Voltage (V) 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) Document Number: 72156 S-03468—Rev. B, 11-Mar-03