U430/431 Vishay Siliconix Matched N-Channel Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Typ (mV) U430 –1 to –4 –25 10 –15 25 U431 –2 to –6 –25 10 –15 25 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 15 pA Low Noise High CMRR: 75 dB Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals DESCRIPTION The U430/431 are matched JFET pairs assembled in a TO-78 package. These devices offer good power gain even at frequencies beyond 250 MHz. The TO-78 package is available with full military processing (see Military Information). For similar products, see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-78 S1 S2 1 G1 7 G2 6 2 5 3 D1 4 D2 Case Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70249 S-04031—Rev. E, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C www.vishay.com 8-1 U430/431 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits U430 U431 Symbol Test Conditions Typb V(BR)GSS IG = –1 mA, VDS = 0 V –35 VGS(off) VDS = 10 V, ID = 1 nA –1 –4 –2 –6 Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 12 30 24 60 mA Gate Reverse Current IGSS Parameter Min –25 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage VGS = –15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 5 mA Gate Operating Current Gate-Source Forward Voltage IG VGS(F) TA = 150_C IG = 10 mA , VDS = 0 V –25 V –5 –150 –150 pA –10 –150 –150 nA –15 pA –10 nA 0.8 1 1 V Dynamic Common-Source Forward Transconductanceb gfs 15 10 10 mS VDS = 10 V, ID = 10 mA , f = 1 kHz Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss 100 250 250 4.5 5 5 2 2.5 2.5 VGS = –10 V, VDS = 0 V, f = 1 MHz Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 10 V, ID = 10 mA f = 100 Hz mS pF nV⁄ √Hz 6 High Frequency Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Power-Match Source Admittance gig 14 VDS = 10 V, ID = 10 mA f = 100 MHz 0.13 mS 12 Matching Differential Gate-Source Voltage Saturation Drain Current Ratioc Transconductance Ratioc Gate-Source Cutoff Voltage Ratioc Differential Gate Current Common Mode Rejection Ratio |V GS1–V GS2| I DSS1 I DSS2 gfs1 gfs2 V GS(off)1 V GS(off)2 |I G1–I G2| CMRR VDG = 10 V, ID = 10 mA 25 VDS = 10 V, VGS = 0 V 0.95 0.9 1 0.9 1 VDS = 10 V, ID = 10 mA, f = 1 kHz 0.95 0.9 1 0.9 1 VDS = 10 V, ID = 1 nA 0.95 0.9 1 0.9 1 VDG = 10 V, ID = 5 mA –2 pA VDG = 5 to 10 V, ID = 10 mA 75 dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 8-2 mV NZBD Document Number: 70249 S-04031—Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 50 80 40 60 30 gfs 40 20 IDSS 10 20 0 –1 –3 –4 –2 VGS(off) – Gate-Source Cutoff Voltage (V) 10 mA TA = 25_C IGSS @ 25_C 0.1 pA 0 3 180 40 120 rDS gos 20 60 0 gfs – Forward Transconductance (mS) 60 gos – Output Conductance (µS) 240 0 –4 15 VDS = 10 V f = 1 kHz 16 TA = –55_C 12 25_C 8 125_C 4 0 –5 0.1 1 VGS(off) – Gate-Source Cutoff Voltage (V) 10 ID – Drain Current (mA) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 50 30 24 VDS = 10 V f = 1 kHz VGS(off) = –3 V gfs – Forward Transconductance (mS) VGS(off) = –1.5 V gfs – Forward Transconductance (mS) 12 20 VGS(off) = –3 V 80 –3 9 Common-Source Forward Transconductance vs. Drain Current 300 –2 4 VDG – Drain-Gate Voltage (V) rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz –1 200 mA 10 pA –5 100 rDS(on) – Drain-Source On-Resistance ( Ω ) IGSS @ 125_C 100 pA On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 0 200 mA IG @ ID = 10 mA 1 pA 0 0 TA = 125_C 1 nA IG – Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 10 nA gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) 100 TA = –55_C 25_C 18 125_C 12 6 VDS = 10 V f = 1 kHz 40 TA = –55_C 30 25_C 20 125_C 10 0 0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) www.vishay.com 8-3 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Output Characteristics 20 50 VGS = 0 V 16 40 –0.2 V 12 ID – Drain Current (mA) ID – Drain Current (mA) VGS = 0 V VGS(off) = –3 V VGS(off) = –1.5 V –0.4 V 8 –0.6 V –0.8 V 4 –0.4 V 30 –0.8 V –1.2 V 20 –1.6 V 10 –2.0 V –1.0 V 0 –2.4 V 0 0 2 4 6 8 10 0 2 VDS – Drain-Source Voltage (V) 4 Output Characteristics 8 10 Output Characteristics 15 30 VGS(off) = –1.5 V VGS(off) = –3 V VGS = 0 V 12 VGS = 0 V 24 ID – Drain Current (mA) ID – Drain Current (mA) 6 VDS – Drain-Source Voltage (V) –0.2 V 9 –0.4 V 6 –0.6 V –0.8 V 3 –0.4 V 18 –0.8 V –1.2 V 12 –1.6 V 6 –2.0 V –2.4 V –1.0 V 0 0 0 0.2 0.4 0.6 0.8 1 0 0.2 VDS – Drain-Source Voltage (V) Transfer Characteristics 0.8 1 100 VGS(off) = –1.5 V VDS = 10 V f = 1 kHz VGS(off) = –3 V VDS = 10 V f = 1 kHz 80 ID – Drain Current (mA) 24 ID – Drain Current (mA) 0.6 Transfer Characteristics 30 TA = –55_C 18 25_C 12 125_C 6 60 TA = –55_C 25_C 40 125_C 20 0 0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) www.vishay.com 8-4 0.4 VDS – Drain-Source Voltage (V) –2 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 100 TA = 25_C 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 80 80 VGS(off) = –1.5 V 60 40 –3 V RL + 60 10 V ID VGS(off) = –1.5 V 40 –3 V 20 20 0 0 1 10 100 0.1 1 10 ID – Drain Current (mA) ID – Drain Current (mA) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 15 10 C rss – Reverse Feedback Capacitance (pF) f = 1 MHz C iss – Input Capacitance (pF) g fs R L AV + AV – Voltage Gain rDS(on) – Drain-Source On-Resistance ( Ω ) 100 12 VDS = 0 V 9 6 5V 3 0 f = 1 MHz 8 6 VDS = 0 V 4 2 5V 0 0 –4 –8 –12 –16 –20 0 VGS – Gate-Source Voltage (V) –8 –12 –16 –20 VGS – Gate-Source Voltage (V) Input Admittance vs. Frequency 100 –4 Forward Admittance vs. Frequency 100 VDG = 10 V ID = 10 mA Common–Gate VDG = 10 V ID = 10 mA Common–Gate gig –gfg 10 (mS) (mS) 10 big 1 bfg 1 0.1 0.1 100 200 500 f – Frequency (MHz) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 1000 100 200 500 1000 f – Frequency (MHz) www.vishay.com 8-5 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Admittance vs. Frequency Reverse Admittance vs. Frequency 10 100 VDG = 10 V ID = 10 mA Common–Gate VDG = 10 V ID = 10 mA Common–Gate bog 1 10 (mS) (mS) –brg +grg 0.1 gog –grg 1 0.01 0.1 200 100 500 100 1000 f – Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current VGS(off) = –3 V 16 gos – Output Conductance (µS) Hz 1000 150 VDS = 10 V en – Noise Voltage nV / 500 f – Frequency (MHz) 20 ID = 1 mA 12 8 4 ID = 10 mA VDS = 10 V f = 1 kHz 120 90 TA = –55_C 60 25_C 30 125_C 0 0 10 100 1k f – Frequency (Hz) www.vishay.com 8-6 200 10 k 100 k 0.1 1 10 ID – Drain Current (mA) Document Number: 70249 S-04031—Rev. E, 04-Jun-01