Si1025X Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (min) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 4 at VGS = - 10 V - 1 to - 3.0 - 500 • • • • • • • • Halogen-free Option Available TrenchFET® Power MOSFETs High-Side Switching Low On-Resistance: 4 Ω Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 23 pF (typ.) Miniature Package RoHS COMPLIANT • Gate-Source ESD Protected: 2000 V SC-89 BENEFITS S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: D Top View • • • • • • Ease in Driving Switches Low Offset Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer Small Board Area APPLICATIONS Ordering Information: Si1025X-T1-E3 (Lead (Pb)-free) Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid State Relays ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain TA = 25 °C TA = 85 °C Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) - 200 IS TA = 25 °C TA = 85 °C PD V - 190 - 145 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID Unit - 135 - 650 - 450 - 380 280 250 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71433 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1025X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 10 µA - 60 VGS(th) VDS = VGS, ID = - 0.25 mA -1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-Resistancea Diode Forward Voltagea ± 200 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 50 V, VGS = 0 V - 25 - 50 VDS = - 10 V, VGS = - 10 V - 600 mA VGS = - 4.5 V, ID = - 25 mA 8 4 VGS = - 10 V, ID = - 500 mA, TJ = 125 °C 6 gfs VDS = - 10 V, ID = - 100 mA VSD IS = - 200 mA, VGS = 0 V nA - 250 VDS = - 10 V, VGS = - 4.5 V VGS = - 10 V, ID = - 500 mA RDS(on) Forward Transconductancea VDS = 0 V, VGS = ± 10 V VDS = - 50 V, VGS = 0 V, TJ = 85 °C ID(on) V - 3.0 Ω 100 mS - 1.4 V Dynamicb Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Switchingb, c Turn-On Time tON Turn-Off Time tOFF 1.7 VDS = - 30 V, VGS = - 15 V, ID ≅ - 500 mA nC 0.26 0.46 23 VDS = - 25 V, VGS = 0 V, f = 1 MHz pF 10 5 VDD = - 25 V, RL = 150 Ω, ID ≅ - 165 mA, VGEN = - 10 V, RG = 10 Ω 20 ns 35 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1200 1.0 VGS = 10 V TJ = - 55 °C 7V 8V I D - Drain Current (mA) I D - Drain Current (A) 0.8 6V 0.6 0.4 5V 900 25 °C 125 °C 600 300 0.2 4V 0.0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71433 S-80643-Rev. B, 24-Mar-08 Si1025X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 40 VGS = 0 V VGS = 4.5 V 32 12 VGS = 5 V 8 VGS = 10 V 4 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 16 24 16 Coss 8 0 Crss 0 0 200 400 600 800 1000 0 5 I D - Drain Current (mA) 10 25 Capacitance 15 1.8 ID = 500 mA 1.5 12 VDS = 48 V 9 6 VGS = 10 V at 500 mA 1.2 (Normalized) VDS = 30 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VGS = 4.5 V at 25 mA 0.9 0.6 3 0 0.0 15 0.3 0.3 0.6 0.9 1.2 1.5 0.0 - 50 1.8 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 10 1000 R DS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 8 ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71433 S-80643-Rev. B, 24-Mar-08 10 www.vishay.com 3 Si1025X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.5 0.4 ID = 250 µA V GS(th) Variance (V) 0.3 0.2 0.1 0.0 - 0.1 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 500 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71433. www.vishay.com 4 Document Number: 71433 S-80643-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1