RENESAS H7P0601DS

H7P0601DL, H7P0601DS
Silicon P Channel MOS FET
High Speed Power Switching
REJ03G0044-0100Z
Rev.1.00
Aug.05.2003
Features
• Low on-resistance
RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
Outline
DPAK-2
D
DPAK-S
4
4
G
1 2
3
H7P0601DS
S
1 2
3
H7P0601DL
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Aug.05.2003, page 1 of 10
H7P0601DL, H7P0601DS
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–20
A
Note1
Drain peak current
ID (pulse)
–80
A
Body-drain diode reverse drain current
IDR
–20
A
–12
A
Avalanche current
IAP
Note3
Avalanche energy
EAR
Note3
Channel dissipation
Pch
Note2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Aug.05.2003, page 2 of 10
12.3
mJ
25
W
H7P0601DL, H7P0601DS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
–10
µA
VDS = –60 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.5
V
ID = –1 mA, VDS = –10 V
Static drain to source on state
resistance
RDS(on)
—
40
50
mΩ
ID = –10 A, VGS = –10 V Note1
—
60
85
mΩ
ID = –5 A, VGS = –4.5 V Note1
Forward transfer admittance
|yfs|
7.2
12
—
S
ID = –10 A, VDS = –10 V Note1
Input capacitance
Ciss
—
2200
—
pF
Output capacitance
Coss
—
220
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Reverse transfer capacitance
Crss
—
130
—
pF
Total gate charge
Qg
—
37
—
nC
Gate to source charge
Qgs
—
6.5
—
nC
Gate to drain charge
Qgd
—
8
—
nC
Turn-on delay time
td(on)
—
25
—
ns
Rise time
tr
—
85
—
ns
Turn-off delay time
td(off)
—
70
—
ns
Fall time
tf
—
15
—
ns
Body-drain diode forward voltage
VDF
—
0.95
—
V
IF = –20 A, VGS = 0
—
30
—
ns
IF = –20 A, VGS = 0
diF/dt = 100 A/µs
Body-drain diode reverse recovery trr
time
Note:
1. Pulse test
Rev.1.00, Aug.05.2003, page 3 of 10
VDD = –25 V
VGS = –10 V
ID = –20 A
VGS = –10 V, ID = –10 A
RL = 3.0 Ω
Rg = 4.7 Ω
H7P0601DL, H7P0601DS
Main Characteristics
Power vs. Temperature Derating
−100
Drain Current ID (A)
40
30
20
10
10
µ
0µ s
s
10
−10
−3
(T
DC
c=
−1
Operation in this area
PW
=
10
1m
s
(1
er
sh
a
ot)
25 tio
°C n
)
Op
ms
−0.3 is limited by RDS(on)
−0.1
−0.03
0
25
50
75
Case Temperature
−50
Drain Current ID (A)
Maximum Safe Operation Area
−30
−40
100
125
150
Tc (°C)
Typical Output Characteristics
−10 V
−8 V
−6 V
−20
0
−50
Pulse Test
−5 V
−30
−10
Ta = 25°C
−0.01
−3
−0.1 −0.3
−1
−10 −30 −100
Drain to Source Voltage VDS (V)
−4 V
V GS = −2 V
−3 V
−2
−4
−6
−8
−10
Drain to Source Voltage VDS (V)
Rev.1.00, Aug.05.2003, page 4 of 10
Drain Current ID (A)
Channel Dissipation
Pch (W)
50
−40
Typical Transfer Characteristics
V DS = -10 V
Pulse Test
75°C
25°C
Tc = -75°C
−30
−20
−10
0
−4
−6
−8
−2
Gate to Source Voltage VGS (V)
H7P0601DL, H7P0601DS
−0.8
−0.6
ID = −10 A
−0.4
−2 A
−12
−4
−8
Gate to Source Voltage
−16
0.1
−2 A, −5 A
ID = −10 A
VGS = −4.5 V
0.04
ID = −10 A
−2 A, −5 A
VGS = −10 V
0
50
Case Temperature
100
Tc (°C)
Rev.1.00, Aug.05.2003, page 5 of 10
−10 V
0.01
−1
−2
VGS (V)
0.12
0
−50
0.2
0.02
−20
Static Drain to Source on State Resistance
vs. Temperature
0.16
Pulse Test
0.08
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
VGS = −4.5 V
0.05
−5 A
−0.2
0
0
Drain to Source on State Resistance
RDS(on) (Ω)
Pulse Test
150
−5 −10 −20
−50 −100
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
−1
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
30
VDS = −10 V
Pulse Test
Tc = −25°C
10
25°C
3
75°C
1
0.3
0.1
0.1
0.3
1
3
10
30
Drain Current ID (A)
100
H7P0601DL, H7P0601DS
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
10000
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
30
10
3
3000
300
Crss
30
10
0
−8
−60
−80
0
VDD = −50 V
−25 V
−10 V
16
32
Gate Charge
−12
VGS
48
64
Qg (nc)
Rev.1.00, Aug.05.2003, page 6 of 10
−16
80
Switching Time t (ns)
VDS
VGS (V)
−4
−40
1000
0
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
−20
−5
−10
−15
−20
−25
Drain to Source Voltage VDS
Dynamic Input Characteristics
ID = −20 A
Coss
100
1
-0.1 -0.3
-1
-3
-10 -30 -100
Reverse Drain Current IDR (A)
VDD = −10 V
−25 V
−50 V
Ciss
1000
diF/dt = 100 A/µs
VGS = 0, Ta = 25°C
0
VGS = 0
f = 1 MHz
−30
(V)
Switching Characteristics
VGS = -10 V, VDS = −30 V
Pw = 5 µs, duty < 1 %
300 Rg = 4.7 Ω
tr
t d(off)
100
t d(on)
30
tf
10
30
1
0.1
0.3
1
3
Drain Current
10
ID
30
(A)
100
H7P0601DL, H7P0601DS
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR (A)
−50
Maximum Avalanche Energy vs.
Channel Temperature Drating
Reverse Drain Current vs.
Source to Drain Voltage
−40
−30
−20
−10 V
−10
−5 V
VGS = 0, 5 V
Pulse Test
0
−0.4
−0.8
−1.2
Source to Drain Voltage
−1.6
−2.0
20
IAP = −12 A
VDD = −25 V
duty < 0.1 %
Rg > 50 Ω
16
12
8
4
0
25
50
VSD (V)
Avalanche Test Circuit
100
125
EAR =
1
2
2
L • I AP •
I AP
Monitor
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
-15 V
50Ω
0
Rev.1.00, Aug.05.2003, page 7 of 10
150
Avalanche Waveform
L
V DS
Monitor
75
Channel Temperature Tch (°C)
VDD
H7P0601DL, H7P0601DS
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
1
D=1
0.5
0.2
0.1
0.1
5
0.0
02
0.
θch − c(t) = γs (t) • θch − c
θch − c = 5°C/W, Ta = 25°C
0.01
e
uls
tp
o
1sh
PDM
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Switching Time Waveform
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
V DD
= -30 V
Vout
td(on)
Rev.1.00, Aug.05.2003, page 8 of 10
90%
90%
10%
10%
tr
td(off)
tf
H7P0601DL, H7P0601DS
Package Dimensions
• H7P0601DL
As of January, 2003
1.7 ± 0.5
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
4.7 ± 0.5
1.2 ± 0.3
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
3.1 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Aug.05.2003, page 9 of 10
DPAK (L)-(2)
—
—
0.42 g
H7P0601DL, H7P0601DS
• H7P0601DS
As of January, 2003
6.5 ± 0.5
5.4 ± 0.5
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Unit: mm
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Aug.05.2003, page 10 of 10
DPAK (S)
—
Conforms
0.28 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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