IRFB7446G Data Sheet (541 KB, EN)

StrongIRFET™
IRFB7446GPbF
HEXFET® Power MOSFET
Application
 Brushed Motor drive applications
 BLDC Motor drive applications
Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC Inverters
D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Halogen-Free
TO-220
8
ID (Package Limited)
120A
S
Source
Orderable Part Number
IRFB7446GPbF
125
ID = 70A
100
6
T J = 125°C
4
2
T J = 25°C
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
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75
50
25
0
2
1
123A
D
Drain
Standard Pack
Form
Quantity
Tube
50
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m )
IRFB7446GPbF
ID (Silicon Limited)
TO-220AB
IRFB7446GPbF
G
Gate
Package Type
40V
2.6m
3.3m
S
D
G





Base part number
VDSS
RDS(on) typ.
max
© 2014 International Rectifier
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFB7446GPbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
123
Continuous Drain Current, VGS @ 10V (Silicon Limited)
87
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
120
Pulsed Drain Current 
492
Maximum Power Dissipation
99
Linear Derating Factor
0.66
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175 TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics 111
EAS (Thermally limited)
Single Pulse Avalanche Energy 
236
EAS (Thermally limited)
Single Pulse Avalanche Energy 
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy 
EAR
Thermal Resistance Symbol
Parameter
Typ.
Max.
Junction-to-Case 
RJC
–––
1.52
Case-to-Sink, Flat Greased Surface
RCS
0.50
–––
Junction-to-Ambient 
RJA
–––
62
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min. Typ. Max.
40
––– –––
––– 0.033 –––
–––
2.6
3.3
–––
3.9
–––
2.2
3.0
3.9
––– –––
1.0
––– ––– 150
––– ––– 100
––– ––– -100
–––
1.6
–––
Units
A W
W/°C
V
°C mJ
A
mJ
Units
°C/W Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 5mA 
VGS = 10V, ID = 70A 
m
VGS = 6.0V, ID = 35A 
V
VDS = VGS, ID = 100µA
VDS =40 V, VGS = 0V
µA
VDS =40V,VGS = 0V,TJ =125°C
VGS = 20V
nA
VGS = -20V

Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50, IAS = 70A, VGS =10V.
 ISD  70A, di/dt  1174A/µs, VDD  V(BR)DSS, TJ  175°C.
 Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 Limited by TJmax, TJ = 25°C, L= 1mH, RG = 50, IAS = 22A, VGS =10V.
2
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IRFB7446GPbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
269
–––
–––
–––
–––
–––
–––
Typ.
–––
62
16
20
42
11
34
td(off)
Turn-Off Delay Time
–––
33
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
23
3183
475
331
–––
596
–––
VGS = 0V, VDS = 0V to 32V
–––
688
–––
VGS = 0V, VDS = 0V to 32V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
120
–––
–––
492
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
0.9
1.3
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
7.6
22
24
15
15
1.0
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID =70A
93
ID = 70A
–––
VDS = 20V
nC –––
VGS = 10V
–––
–––
VDD = 20V
–––
ID = 30A
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.5
Diode Characteristics Symbol
IS
ISM
3
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A
V
D
G
S
TJ = 25°C,IS = 70A,VGS = 0V 
V/ns TJ = 175°C,IS = 70A,VDS = 40V
TJ = 25°C
VDD = 34V
ns
TJ = 125°C
IF = 70A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
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IRFB7446GPbF
1000
1000
100
BOTTOM
100
10
4.5V
1
60µs PULSE WIDTH
BOTTOM
4.5V
10
60µs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.2
T J = 175°C
100
10
T J = 25°C
1
VDS = 10V
60µs PULSE WIDTH
0.1
2
4
6
8
ID = 70A
VGS = 10V
1.8
1.4
1.0
0.6
10
-60
-20
100
140
180
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
10000
Ciss
Coss
1000
60
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
20
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
Crss
ID= 70A
12.0
VDS = 32V
VDS = 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFB7446GPbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
100µsec
100
1msec
Package Limited
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
0.1
2.0
1
10
100
VDS , Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.6
50
Id = 5.0mA
49
VDS = 0V to 32V
0.5
48
47
0.4
Energy (µJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
DC
46
45
44
0.3
0.2
43
42
0.1
41
0.0
40
-60
-20
20
60
100
140
0
180
T J , Temperature ( °C )
10
15
20
25
30
35
40
45
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m)
5
Fig 12. Typical Coss Stored Energy
20.0
VGS =
VGS =
VGS =
VGS =
VGS =
15.0
5.5V
6.0V
7.0V
8.0V
10V
10.0
5.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFB7446GPbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
120
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 70A
80
40
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
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IRFB7446GPbF
6
5
IF = 46A
V R = 34V
4
TJ = 25°C
TJ = 125°C
3.5
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
4.5
2.5
ID =
ID =
ID =
ID =
1.5
100µA
250µA
1.0mA
1.0A
3
2
1
0.5
0
-75
-25
25
75
125
175
225
0
200
400
T J , Temperature ( °C )
800
1000
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
5
70
IF = 70A
V R = 34V
4
IF = 46A
V R = 34V
60
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
50
3
QRR (nC)
IRRM (A)
600
diF /dt (A/µs)
2
40
30
20
1
10
0
0
0
200
400
600
800
1000
0
diF /dt (A/µs)
200
400
600
800
1000
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
QRR (nC)
60
50
IF = 70A
V R = 34V
40
TJ = 25°C
TJ = 125°C
30
20
10
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFB7446GPbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
IAS
20V
tp
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFB7446GPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F B 4 3 1 0 G P B F
N o t e : "G " s u f f ix in p a r t n u m b e r
in d ic a t e s "H a lo g e n - F r e e "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
PART N U M BER
D A TE C O D E:
Y = L A S T D IG IT O F
C A L E N D A R YE A R
ASSEM B LY
LO T C O D E
W W = W O RK W EEK
X= FA C TO R Y C O D E
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFB7446GPbF
Qualification Information† Industrial
(per JEDEC JESD47F) ††
Qualification Level Moisture Sensitivity Level
TO-220
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/19/2014
Comment
Updated data sheet with IR corporate template.
Updated EAS (L =1mH) = 236mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V”. on page 2
Updated package outline on page 9
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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