StrongIRFET™ IRFB7446PbF HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS RDS(on) typ. max 40V 2.6m 3.3m ID (Silicon Limited) 123A ID (Package Limited) 120A D G S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free* RoHS Compliant, Halogen-Free* S D G TO-220AB IRFB7446PbF G Gate Package Type IRFB7446PbF TO-220 Standard Pack Form Quantity Tube 50 8 Orderable Part Number IRFB7446PbF 125 100 6 T J = 125°C 4 2 T J = 25°C 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage www.irf.com 75 50 25 0 2 1 S Source ID = 70A ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Base part number D Drain © 2014 International Rectifier 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 7, 2014 IRFB7446PbF Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) 123 Continuous Drain Current, VGS @ 10V (Silicon Limited) 87 Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 Pulsed Drain Current 492 Maximum Power Dissipation 99 Linear Derating Factor 0.66 VGS Gate-to-Source Voltage ± 20 TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics 111 EAS Single Pulse Avalanche Energy 236 EAS (L=1mH) Single Pulse Avalanche Energy IAR Avalanche Current See Fig 15, 16, 23a, 23b Repetitive Avalanche Energy EAR Thermal Resistance Symbol Parameter Typ. Max. Junction-to-Case RJC ––– 1.52 Case-to-Sink, Flat Greased Surface RCS 0.50 ––– Junction-to-Ambient RJA ––– 62 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. Typ. Max. 40 ––– ––– ––– 0.033 ––– ––– 2.6 3.3 ––– 3.9 ––– 2.2 3.0 3.9 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100 ––– 1.6 ––– Units A W W/°C V °C mJ A mJ Units °C/W Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 5mA VGS = 10V, ID = 70A m VGS = 6.0V, ID = 35A V VDS = VGS, ID = 100µA VDS =40 V, VGS = 0V µA VDS =40V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50, IAS = 70A, VGS =10V. ISD 70A, di/dt 1174A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 1mH, RG = 50, IAS = 22A, VGS =10V. * Halogen -Free since April 30, 2014 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7446PbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 269 ––– ––– ––– ––– ––– ––– Typ. ––– 62 16 20 42 11 34 td(off) Turn-Off Delay Time ––– 33 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 23 3183 475 331 ––– 596 ––– VGS = 0V, VDS = 0V to 32V ––– 688 ––– VGS = 0V, VDS = 0V to 32V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 120 ––– ––– 492 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– 0.9 1.3 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 7.6 22 24 15 15 1.0 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID =70A 93 ID = 70A ––– VDS = 20V nC ––– VGS = 10V ––– ––– VDD = 20V ––– ID = 30A ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.5 Diode Characteristics Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 70A,VGS = 0V V/ns TJ = 175°C,IS = 70A,VDS = 40V TJ = 25°C VDD = 34V ns TJ = 125°C IF = 70A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback November 7, 2014 IRFB7446PbF 1000 1000 100 BOTTOM 100 10 4.5V 1 60µs PULSE WIDTH BOTTOM 4.5V 10 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.2 T J = 175°C 100 10 T J = 25°C 1 VDS = 10V 60µs PULSE WIDTH 0.1 2 4 6 8 ID = 70A VGS = 10V 1.8 1.4 1.0 0.6 10 -60 -20 100 140 180 14.0 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd 10000 Ciss Coss 1000 60 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 20 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Crss ID= 70A 12.0 VDS = 32V VDS = 20V 10.0 8.0 6.0 4.0 2.0 0.0 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2014 International Rectifier 0 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 7, 2014 IRFB7446PbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 T J = 25°C 10 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100µsec 100 1msec Package Limited 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.5 1.0 1.5 0.1 2.0 1 10 100 VDS , Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.6 50 Id = 5.0mA 49 VDS = 0V to 32V 0.5 48 47 0.4 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) DC 46 45 44 0.3 0.2 43 42 0.1 41 0.0 40 -60 -20 20 60 100 140 0 180 T J , Temperature ( °C ) 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 5 Fig 12. Typical Coss Stored Energy 20.0 VGS = VGS = VGS = VGS = VGS = 15.0 5.5V 6.0V 7.0V 8.0V 10V 10.0 5.0 0.0 0 100 200 300 400 500 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7446PbF Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 70A 80 40 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback November 7, 2014 IRFB7446PbF 6 5 IF = 46A V R = 34V 4 TJ = 25°C TJ = 125°C 3.5 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.5 2.5 ID = ID = ID = ID = 1.5 100µA 250µA 1.0mA 1.0A 3 2 1 0.5 0 -75 -25 25 75 125 175 225 0 200 T J , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 5 70 IF = 70A V R = 34V 4 IF = 46A V R = 34V 60 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 50 3 QRR (nC) IRRM (A) 400 2 40 30 20 1 10 0 0 0 200 400 600 800 1000 0 diF /dt (A/µs) 200 400 600 800 1000 diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt QRR (nC) 60 50 IF = 70A V R = 34V 40 TJ = 25°C TJ = 125°C 30 20 10 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7446PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 7, 2014 IRFB7446PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFB7446PbF Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level TO-220 N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Comment 9/11/2012 Added Package limit and updated Fig2 & Fig10 on page 1, 2 & page 5. 4/22/2014 Updated data sheet with new IR corporate template. Updated package outline and part marking on page 9. Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1. 11/7/2014 Updated EAS (L =1mH) = 236mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V”. on page 2 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014