IRFB7546 Data Sheet (537 KB, EN)

StrongIRFET™
IRFB7546PbF
HEXFET® Power MOSFET
Application
 Brushed Motor drive applications
 BLDC Motor drive applications
Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC Inverters
7.3m
75A
TO-220AB
IRFB7546PbF
D
Drain
Standard Pack
Form
Quantity
Tube
50
24
S
Source
Orderable Part Number
IRFB7546PbF
80
ID = 45A
20
16
TJ = 125°C
12
8
4
60
40
20
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
max
S
D
G
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m)
TO-220
6.0m
ID
G
Gate
IRFB7546PbF
RDS(on) typ.
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
Package Type
60V
G




Base part number
VDSS
D
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0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V
75
Continuous Drain Current, VGS @ 10V
53
Pulsed Drain Current 
300
Maximum Power Dissipation
99
Linear Derating Factor
0.7
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175 TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics 110
EAS (Thermally limited)
Single Pulse Avalanche Energy 
170
EAS (Thermally limited)
Single Pulse Avalanche Energy 
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy 
EAR
Thermal Resistance Symbol
Parameter
Typ.
Max.
Junction-to-Case 
RJC
–––
1.52
Case-to-Sink, Flat Greased Surface
RCS
0.50
–––
Junction-to-Ambient 
RJA
–––
62
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max.
––– –––
46
–––
6.0
7.3
7.5
–––
–––
3.7
–––
1.0
––– 150
––– 100
––– -100
1.6
–––
Units
A W
W/°C
V
°C mJ
A
mJ
Units
°C/W Units
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA 
VGS = 10V, ID = 45A 
m
VGS = 6.0V, ID = 23A 
V
VDS = VGS, ID = 100µA
VDS =60 V, VGS = 0V
µA
VDS =60V,VGS = 0V,TJ =125°C
VGS = 20V
nA
VGS = -20V

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 110µH, RG = 50, IAS = 45A, VGS =10V.
 ISD  100A, di/dt  1260A/µs, VDD  V(BR)DSS, TJ 175°C.
 Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V
2
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Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
150
–––
–––
–––
–––
–––
–––
Typ.
–––
58
14
18
40
11
51
td(off)
Turn-Off Delay Time
–––
32
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
34
3000
280
180
–––
290
–––
VGS = 0V, VDS = 0V to 48V
–––
370
–––
VGS = 0V, VDS = 0V to 48V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
75
–––
–––
300
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
7.9
29
32
33
40
1.9
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID = 45A
87
ID = 45A
–––
VDS = 30V
nC –––
VGS = 10V
–––
–––
VDD = 30V
–––
ID = 45A
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
Diode Characteristics Symbol
IS
ISM
3
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A
V
D
G
S
TJ = 25°C,IS = 45A,VGS = 0V 
V/ns TJ = 175°C,IS = 45A,VDS = 60V
TJ = 25°C
VDD = 51V
ns
TJ = 125°C
IF = 45A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
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IRFB7546PbF
1000
1000
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
100
BOTTOM
4.5V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
2.4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1000
100
TJ = 175°C
TJ = 25°C
10
1
VDS = 25V
60µs PULSE WIDTH
ID = 45A
VGS = 10V
2.0
1.6
1.2
0.8
0.4
0.1
2
3
4
5
6
7
8
-60
-20
100
140
180
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
1000
60
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
20
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
100
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
C
Crss oss
ID = 45A
12.0
VDS = 48V
VDS = 30V
10.0
VDS= 12V
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
10
VDS, Drain-to-Source Voltage (V)
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0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFB7546PbF
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
100µsec
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
10msec
0.1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1
0.1
0.4
0.7
1.0
1.3
0.1
1.6
1
10
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.5
78
Id = 1.0mA
76
0.4
74
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
1msec
72
70
0.3
0.2
68
0.1
66
0.0
64
-60
-20
20
60
100
140
0
180
TJ , Temperature ( °C )
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
RDS (on), Drain-to -Source On Resistance (m)
10
Fig 12. Typical Coss Stored Energy
40.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
50
100
150
200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFB7546PbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
120
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 45A
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
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IRFB7546PbF
15
4.0
IF = 30A
VR = 51V
12
TJ = 25°C
TJ = 125°C
3.5
9
IRRM (A)
VGS(th), Gate threshold Voltage (V)
4.5
3.0
2.5
2.0
6
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.5
3
0
1.0
-75 -50 -25
0
0
25 50 75 100 125 150 175
200
600
800
1000
diF /dt (A/µs)
TJ , Temperature ( °C )
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
15
300
IF = 45A
VR = 51V
12
TJ = 25°C
TJ = 125°C
9
QRR (nC)
IRRM (A)
400
6
250
IF = 30A
VR = 51V
200
TJ = 25°C
TJ = 125°C
150
100
3
50
0
0
200
400
600
800
0
1000
0
diF /dt (A/µs)
200
400
600
800
1000
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
QRR (nC)
300
250
IF = 45A
VR = 51V
200
TJ = 25°C
TJ = 125°C
150
100
50
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFB7546PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFB7546PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFB7546PbF
Qualification Information† Industrial
(per JEDEC JESD47F) ††
Qualification Level TO-220
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/7/2014
Comment
Updated EAS (L =1mH) = 170mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V” on page 2
Updated package outline on page 9
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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