MPSL01 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 120 Vdc Collector −Base Voltage VCBO 140 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W http://onsemi.com TO−92 (TO−226AA) CASE 29−11 STYLE 1 1 2 3 COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 120 — Vdc Collector −Base Breakdown Voltage (IC = 100 μAdc, IE = 0 ) V(BR)CBO 140 — Vdc Emitter −Base Breakdown Voltage (IE = 10 μAdc, IC = 0) V(BR)EBO 5.0 — Vdc Collector Cutoff Current (VCB = 75 Vdc, IE = 0) ICBO — 1.0 μAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO — 100 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: MPSL01/D MPSL01 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 50 300 — — — 0.20 0.30 — — 1.2 1.4 fT 60 — MHz Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb — 8.0 pF Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 30 — — ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)(1) VBE(sat) Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 MPSL01 500 300 h FE, DC CURRENT GAIN 200 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 25°C 100 −55 °C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 101 VCE = 30 V IC, COLLECTOR CURRENT (A) μ VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 100 10−1 TJ = 125°C 10−2 75°C REVERSE 10−3 FORWARD 25°C 10−4 10−5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region http://onsemi.com 3 0.5 0.6 10 20 50 MPSL01 1.0 θV, TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 2.5 2.0 1.0 qVC for VCE(sat) 0.5 0 − 0.5 − 1.0 qVB for VBE(sat) − 1.5 − 2.0 − 2.5 0.1 100 TJ = − 55°C to +135°C 1.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 100 10 μs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 μF 3.0 k RC RB Vout 5.1 k Vin 100 C, CAPACITANCE (pF) VCC 30 V VBB −8.8 V Vin 1N914 TJ = 25°C 30 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 10 20 Figure 7. Capacitances 5000 1000 IC/IB = 10 TJ = 25°C 500 2000 t, TIME (ns) 100 td @ VEB(off) = 1.0 V 30 VCC = 120 V tf @ VCC = 30 V 500 300 200 20 10 0.2 0.3 0.5 IC/IB = 10 TJ = 25°C 1000 tr @ VCC = 30 V 50 tf @ VCC = 120 V 3000 tr @ VCC = 120 V 300 t, TIME (ns) 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit 200 100 Figure 5. Temperature Coefficients 100 70 50 10.2 V 50 ts @ VCC = 120 V 100 1.0 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 50 0.2 0.3 0.5 200 Figure 8. Turn−On Time 20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. Turn−Off Time http://onsemi.com 4 100 200 MPSL01 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C 1 N SECTION X−X INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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