Order this document by MPS6530/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 2 1 EMITTER 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 mW TJ, Tstg 150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 0.2 °C/mW Junction Temperature THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 — Vdc Emitter – Base Breakdown Voltage (IB = 10 mAdc, IC = 0) V(BR)EBO 5.0 — Vdc — — 0.05 2.0 Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TA = 60°C) mAdc ICBO REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS6530 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 30 40 25 — 120 — Unit ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) — 0.5 Vdc Base – Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VBE(sat) — 1.0 Vdc Cobo — 5.0 pF SMALL– SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V +16 V 0 – 2.0 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 200 Ω +16 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 200 Ω 0 1.0 kΩ < 2.0 ns CS* < 10 pF 1.0 kΩ –14 V < 20 ns CS* < 10 pF – 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time 2 Figure 2. Turn–Off Time Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS6530 TRANSIENT CHARACTERISTICS 25°C 100°C 10 7.0 5.0 30 10 7.0 5.0 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Cobo Q, CHARGE (nC) CAPACITANCE (pF) 20 QA 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 20 Figure 3. Capacitances 100 IC/IB = 10 70 VCC = 30 V IC/IB = 10 70 tr 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 t, TIME (ns) t, TIME (ns) 500 Figure 4. Charge Data 100 30 tf 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s′, STORAGE TIME (ns) 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 300 500 3 MPS6530 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 2.0 IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C selected from both the 2N4400 and 2N4401 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly numhfe and other “h” parameters for this series of transistors. To bered curves on each graph. obtain these curves, a high–gain and a low–gain unit were 300 50 k hie , INPUT IMPEDANCE (OHMS) hfe , CURRENT GAIN 200 100 70 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 50 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 2.0 k 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Figure 11. Current Gain Figure 12. Input Impedance 5.0 7.0 10 100 hoe, OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 5.0 k IC, COLLECTOR CURRENT (mA) 10 4 10 k IC, COLLECTOR CURRENT (mA) 7.0 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 20 k 500 5.0 7.0 10 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 50 20 10 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 5.0 7.0 10 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS6530 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 – 55°C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.2 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 + 0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) – 0.5 – 1.0 – 1.5 – 2.0 0 0.1 0.2 qVC for VCE(sat) 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 0.8 100 200 500 Figure 17. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data – 2.5 0.1 0.2 qVB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 Figure 18. Temperature Coefficients 5 MPS6530 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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