MBRF30H150CTG, MBR30H150CTG SWITCHMODE™ Power Rectifier 150 V, 30 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 150 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 30 A Total (15 A Per Diode Leg) Guard−Ring for Stress Protection These are Pb−Free Devices 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAMS Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds AYWW B30H150G TO−220 FULLPAK] AKA CASE 221D STYLE 3 1 2 3 4 MAXIMUM RATINGS Please See the Table on the Following Page TO−220AB CASE 221A STYLE 6 1 2 AYWW B30H150G AKA 3 A Y WW B30H150 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 1 1 Publication Order Number: MBRF30H150CT/D MBRF30H150CTG, MBR30H150CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit VRRM VRWM VR 150 V IF(AV) 15 30 A IFSM 200 A Operating Junction Temperature (Note 1) TJ −20 to +150 °C Storage Temperature Tstg −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V Symbol Value Unit RqJC RqJA RqJC 2.0 45 2.5 Typ Max 0.69 0.55 0.98 0.68 0.75 0.60 1.11 0.73 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 124°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance (MBR30H150CTG) − Junction−to−Case − Junction−to−Ambient − Junction−to−Case (MBRF30H150CTG) °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) (IF = 15 A, TC = 25°C) (IF = 15 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR 60 50 Unit V mA mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping† MBRF30H150CTG TO−220FP (Pb−Free) 50 Units / Rail MBR30H150CTG TO−220 (Pb−Free) 50 Units / Rail Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBRF30H150CTG, MBR30H150CTG 100 TJ = 125°C TJ = 100°C TJ = 25°C 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 TJ = 125°C TJ = 100°C TJ = 25°C 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−01 1.0E−02 TJ = 125°C IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) TJ = 125°C 1.0E−02 1.0E−03 TJ = 100°C 1.0E−04 TJ = 100°C 1.0E−03 1.0E−04 1.0E−05 TJ = 25°C TJ = 25°C 1.0E−05 1.0E−06 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 25 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 1.0E−06 1.0E−07 0 10 20 30 40 50 60 70 80 90 100110 120130140150 0 10 20 30 40 50 60 70 80 90 100110 120130140150 dc 20 15 SQUARE WAVE 10 5 0 95 100 105 110 115 120 125 130 135 140 145 150 155 30 TJ = 150°C 25 SQUARE 20 15 dc 10 5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 MBRF30H150CTG, MBR30H150CTG 10000 C, CAPACITANCE (pF) TJ = 25°C 1000 100 10 0 50 100 150 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Ambient for MBR30H150CTG 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case for MBR30H150CTG http://onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBRF30H150CTG, MBR30H150CTG 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBRF30H150CTG http://onsemi.com 5 100 1000 MBRF30H150CTG, MBR30H150CTG PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M −T− F T SEATING PLANE C S DIM A B C D F G H J K L N Q R S T U V Z A U 1 2 3 H K Z L R V MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 Q INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE Y TO−220 CASE 221A−09 ISSUE AF B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. J G D N FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC. INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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