NTST30U100CT, NTSB30U100CT-1, NTSJ30U100CTG, NTSB30U100CTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.42 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • www.onsemi.com VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 100 VOLTS Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available PIN CONNECTIONS 1 2, 4 3 4 4 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 2 3 Mechanical Characteristics TO−220AB CASE 221A STYLE 6 12 3 I2PAK CASE 418D STYLE 3 4 • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 2 TO−220FP CASE 221AH D2PAK CASE 418B 3 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 8 1 Publication Order Number: NTST30U100CT/D NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 125°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 100 V IF(AV) A 30 15 IFRM A 60 30 IFSM 160 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol NTST30U100CTG, NTSB30U100CT−1G NTSB30U100CTG NTSJ30U100CTG Unit Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient RqJC RqJA 2.5 70 0.93 46.5 3.81 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Typ Max 0.47 0.52 0.66 − − 0.80 0.42 0.48 0.60 − − 0.65 15 12 65 32 Unit V mA mA 675 60 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% www.onsemi.com 2 NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG 100 100 TA = 150°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISITICS TA = 25°C 10 TA = 125°C 1.0 0.1 TA = 150°C 10 TA = 125°C 1.0 TA = 25°C 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 20 30 CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 20 15 SQUARE WAVE 10 5 0 0 20 35 30 25 SQUARE WAVE 20 15 10 5 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 30 RqJC = 1.3°C/W 45 40 0 RqJC = 1.3°C/W dc 25 140 Figure 4. Current Derating per Leg 60 dc 100 30 Figure 3. Typical Junction Capacitance 55 50 90 Figure 2. Typical Reverse Current IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage 50 70 40 60 80 VR, REVERSE VOLTAGE (VOLTS) 25 IPK/IAV = 5 IPK/IAV = 20 20 15 SQUARE WAVE 10 dc 5 0 140 IPK/IAV = 10 TA = 150°C 0 2 4 6 8 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating, Case Figure 6. Forward Power Dissipation www.onsemi.com 3 18 NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 0.1 10% 5% 2% Single Pulse 1% 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST30U100CT and NTSB30U100CT−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, Pulse Time (sec) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ30U100CTG 1 50% Duty Cycle 0.1 20% 10% 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 Figure 9. Typical Transient Thermal Response, Junction−to−Case for NTSB30U100CTG www.onsemi.com 4 1000 NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG ORDERING INFORMATION Package Shipping† NTST30U100CTG TO−220AB (Pb−Free) 50 Units / Rail NTST30U100CTH TO−220AB (Halide−Free) 50 Units / Rail I2PAK (Pb−Free) 50 Units / Rail NTSJ30U100CTG TO−220FP (Halide−Free) 50 Units / Rail NTSB30U100CTG D2PAK (Pb−Free) 50 Units / Rail NTSB30U100CTT4G D2PAK (Pb−Free) 800 / Tape & Reel Device NTSB30U100CT−1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS AYWW TS30U10Cx AKA AYWW TS30U10CG AKA TO−220AB TO−220FP A Y WW AKA x G H AYWW TS30U10CG AKA I2PAK = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package www.onsemi.com 5 AYWW TS30U10CG AKA D2PAK NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M www.onsemi.com 6 INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 STYLE 3: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A E B P E/2 0.14 Q D SCALE 1:1 B A A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X M SEATING PLANE b2 c b 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION www.onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 NTST30U100CT, NTSB30U100CT−1, NTSJ30U100CTG, NTSB30U100CTG PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 A S 3 −T− SEATING PLANE K J G D W H 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V M T B VARIABLE CONFIGURATION ZONE M N R MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 P U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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