NTST20120CT D

NTST20120CTG,
NTSJ20120CTG,
NTSB20120CT-1G,
NTSB20120CTG,
NTSB20120CTT4G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.54 V at IF = 5 A
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VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER
RECTIFIERS 20 AMPERES,
120 VOLTS
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
PIN CONNECTIONS
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
Pb−Free and Halide−Free Packages are Available
1
2, 4
3
4
4
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
3
TO−220AB
CASE 221A
STYLE 6
12
3
I2PAK
CASE 418D
STYLE 3
4
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
TO−220FP
CASE 221AH
2
D2PAK
CASE 418B
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1
Publication Order Number:
NTST20120CT/D
NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 130°C)
Symbol
Value
Unit
VRRM
VRWM
VR
120
V
IF(AV)
A
Per device
Per diode
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
20
10
IFRM
A
Per device
Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
40
20
IFSM
120
A
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
NTST20120CTG
NTSB20120CT−1G
NTSB20120CTG
NTSJ20120CTG
Unit
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
2.5
70
1.43
46.8
4.42
105
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
Typ
Max
0.62
0.90
−
1.10
0.54
0.64
−
0.72
12
6
−
−
mA
mA
−
17
700
100
mA
mA
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
V
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
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2
NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
100
TA = 150°C
I R , INSTANTANEOUS REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISITICS
TA = 25°C
TA = 125°C
10
1.0
0.1
0
1.4
1.6
0.2
0.4
0.6
0.8
1.0
1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
TA = 150°C
10
TA = 125°C
1.0
0.1
0.01
TA = 25°C
0.001
1.8
20
CJ, JUNCTION CAPACITANCE (pF)
10000
TJ = 25°C
1000
100
10
0.1
1
10
VR, REVERSE VOLTAGE (V)
100
20
RqJC = 1.3°C/W
dc
15
10
SQUARE WAVE
5
0
0
Figure 3. Typical Junction Capacitance
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
Figure 4. Current Derating per Leg
30
40
RqJC = 1.3°C/W
35
dc
30
25
SQUARE WAVE
20
15
10
5
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
120
Figure 2. Typical Reverse Current
Characteristics
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
40
60
80
30
50
70
90 100 110
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
IPK/IAV = 10
IPK/IAV = 20
25
IPK/IAV = 5
20
15
SQUARE
WAVE
10
dc
5
TJ = 150°C
0
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
0
140
2
4
6
8
10
12
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
14
NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
TYPICAL CHARACTERISITICS
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
1
50% Duty Cycle
20%
10%
0.1
5%
2%
Single Pulse
1%
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
Figure 7. Typical Transient Thermal Response for NTST20120CT and NTSB20120CT−1G
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
50% Duty Cycle
1
20%
0.1
10%
5%
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
Figure 8. Typical Transient Thermal Response for NTSJ20120CTG
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1% Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
Figure 9. Typical Transient Thermal Response for NTSB20120CTG
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4
NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
ORDERING INFORMATION
Package
Shipping
NTST20120CTG
Device
TO−220AB
(Pb−Free)
50 Units / Rail
NTSJ20120CTG
TO−220FP
(Halide−Free)
50 Units / Rail
NTSB20120CT−1G
I2PAK
(Pb−Free)
50 Units / Rail
NTSB20120CTG
D2PAK
(Pb−Free)
50 Units / Rail
NTSB20120CTT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
MARKING DIAGRAMS
AYWW
TS20120Cx
AKA
AYWW
TS20120CG
AKA
AYWW
TS20120CG
AKA
TO−220AB
TO−220FP
I2PAK
A
Y
WW
AKA
x
G
H
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
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5
AYWW
TS20120CG
AKA
D2PAK
NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE B
A
B
E
A
P
E/2
SEATING
PLANE
0.14
M
B A
M
H1
A1
4
Q
D
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
c
b
0.25
M
B A
M
C
A2
e
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6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.70
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
--2.80
3.00
3.40
2.80
3.20
NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
VARIABLE
CONFIGURATION
ZONE
N
R
P
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
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7
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG,
NTSB20120CTT4G
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
J
G
D 3 PL
0.13 (0.005) M T B
H
M
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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8
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NTST20120CT/D