NTST20120CTG, NTSJ20120CTG, NTSB20120CT-1G, NTSB20120CTG, NTSB20120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.54 V at IF = 5 A www.onsemi.com VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 20 AMPERES, 120 VOLTS Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • PIN CONNECTIONS Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available 1 2, 4 3 4 4 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 2 3 TO−220AB CASE 221A STYLE 6 12 3 I2PAK CASE 418D STYLE 3 4 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 TO−220FP CASE 221AH 2 D2PAK CASE 418B 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 5 1 Publication Order Number: NTST20120CT/D NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 130°C) Symbol Value Unit VRRM VRWM VR 120 V IF(AV) A Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 135°C) 20 10 IFRM A Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 40 20 IFSM 120 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol NTST20120CTG NTSB20120CT−1G NTSB20120CTG NTSJ20120CTG Unit Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient RqJC RqJA 2.5 70 1.43 46.8 4.42 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) Typ Max 0.62 0.90 − 1.10 0.54 0.64 − 0.72 12 6 − − mA mA − 17 700 100 mA mA vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (VR = 90 V, TJ = 125°C) V IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% www.onsemi.com 2 NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G 100 TA = 150°C I R , INSTANTANEOUS REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISITICS TA = 25°C TA = 125°C 10 1.0 0.1 0 1.4 1.6 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 TA = 150°C 10 TA = 125°C 1.0 0.1 0.01 TA = 25°C 0.001 1.8 20 CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 10 0.1 1 10 VR, REVERSE VOLTAGE (V) 100 20 RqJC = 1.3°C/W dc 15 10 SQUARE WAVE 5 0 0 Figure 3. Typical Junction Capacitance 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 4. Current Derating per Leg 30 40 RqJC = 1.3°C/W 35 dc 30 25 SQUARE WAVE 20 15 10 5 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 120 Figure 2. Typical Reverse Current Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Instantaneous Forward Characteristics 40 60 80 30 50 70 90 100 110 VR, INSTANTANEOUS REVERSE VOLTAGE (V) IPK/IAV = 10 IPK/IAV = 20 25 IPK/IAV = 5 20 15 SQUARE WAVE 10 dc 5 TJ = 150°C 0 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 0 140 2 4 6 8 10 12 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 14 NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% Single Pulse 1% 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Figure 7. Typical Transient Thermal Response for NTST20120CT and NTSB20120CT−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, Pulse Time (sec) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Transient Thermal Response for NTSJ20120CTG 1 50% Duty Cycle 20% 0.1 10% 5% 2% 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 9. Typical Transient Thermal Response for NTSB20120CTG www.onsemi.com 4 NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G ORDERING INFORMATION Package Shipping NTST20120CTG Device TO−220AB (Pb−Free) 50 Units / Rail NTSJ20120CTG TO−220FP (Halide−Free) 50 Units / Rail NTSB20120CT−1G I2PAK (Pb−Free) 50 Units / Rail NTSB20120CTG D2PAK (Pb−Free) 50 Units / Rail NTSB20120CTT4G D2PAK (Pb−Free) 800 / Tape & Reel MARKING DIAGRAMS AYWW TS20120Cx AKA AYWW TS20120CG AKA AYWW TS20120CG AKA TO−220AB TO−220FP I2PAK A Y WW AKA x G H = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package www.onsemi.com 5 AYWW TS20120CG AKA D2PAK NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE B A B E A P E/2 SEATING PLANE 0.14 M B A M H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e www.onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.70 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.80 3.00 3.40 2.80 3.20 NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) H M T B M VARIABLE CONFIGURATION ZONE N R P U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 www.onsemi.com 7 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTST20120CTG, NTSJ20120CTG, NTSB20120CT−1G, NTSB20120CTG, NTSB20120CTT4G PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 ANODE CATHODE ANODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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