MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G Power Rectifier http://onsemi.com Features and Benefits • • • • • • ULTRAFAST RECTIFIER 5.0 AMPERES 600 VOLTS Ultrafast 30 Nanosecond Recovery Times 175°C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts SURHD8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* DPAK CASE 369C STYLES 3, 8 Applications • Power Supplies • Inverters • Free Wheeling Diodes 1 4 3 • • 4 3 STYLE 3 Mechanical Characteristics • • • • 1 Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 0.4 g (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) STYLE 8 MARKING DIAGRAMS AYWW AYWW UH560G 560W1G STYLE 3 STYLE 8 UH560 560W1 A Y WW G = MURHD560T4 = MURHD560W1T4 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MURHD560T4G DPAK (Pb−Free) 2,500 / Tape & Reel SURHD8560T4G DPAK (Pb−Free) 2,500 / Tape & Reel MURHD560W1T4G DPAK (Pb−Free) 2,500 / Tape & Reel SURHD8560W1T4G DPAK (Pb−Free) 2,500 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 8 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MURHD560/D MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 159°C) IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction and Storage Temperature Range TJ, Tstg 5.0 50 −65 to +175 A A °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction to Case Rating RqJC 2.5 °C/W Maximum Thermal Resistance, Junction to Ambient (Note 1) RqJA 49.5 °C/W Value Unit 1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm2 Cu area. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5.0 Amps, TC = 25°C) (IF = 5.0 Amps, TC = 125°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) IR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C) trr 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2.7 1.65 10 70 30 V mA ns MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G 100 IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 100 150°C 10 125°C 100°C 1 25°C 0.1 0.01 0 1.0 0.5 2.5 2.0 1.5 125°C 25°C 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 6.0 IR, MAXIMUM REVERSE CURRENT (AMPS) 1.0E−3 IR, REVERSE CURRENT (AMPS) 150°C 125°C 1.0E−5 150°C 1.0E−4 100°C 1.0E−6 125°C 100°C 1.0E−5 1.0E−7 1.0E−6 1.0E−8 0 100 200 500 400 300 25°C 1.0E−7 25°C 600 1.0E−8 0 100 200 400 300 500 600 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 100 PFO, AVERAGE POWER DISSIPATION (WATTS) 20 90 C, CAPACITANCE (pF) 5.0 4.0 3.0 Figure 2. Maximum Forward Voltage 1.0E−4 80 70 60 50 40 30 20 10 0 2.0 1.0 VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.0E−9 100°C 1 0.01 3.0 150°C 10 0 25 50 75 100 125 150 175 200 TJ = 175°C 15 SQUARE WAVE 10 dc 5 0 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Typical Capacitance Figure 6. Forward Power Dissipation http://onsemi.com 3 8 9 10,000 RqJC = 2.5°C/W TJ = 175°C dc 8 I FSM , NON-REPETITIVE SURGE CURRENT (A) IF, AVERAGE FORWARD CURRENT (AMPS) MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G 7 6 SQUARE WAVE 5 4 3 2 1 0 100 110 120 130 140 150 160 170 1,000 180 100 10 100 10 1,000 10,000 TC, CASE TEMPERATURE (°C) tp, SQUARE WAVE PULSE DURATION (ms) Figure 7. Current Derating Figure 8. Typical Non−Repetitive Surge Current R(t), TRANSIENT THERMAL RESISTANCE * Typical performance based on a limited sample size. ON Semiconductor does not guarantee ratings not listed in the Maximum Ratings table. 10 0.5 1 0.2 0.1 0.05 0.1 0.01 P(pk) t1 Single Pulse t2 DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response, Junction to Case 100 10 1 0.5 0.2 0.1 0.05 0.01 P(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 10. Thermal Response, Junction to Ambient http://onsemi.com 4 10 100 1000 MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 6.17 0.243 SCALE 3:1 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE 3.00 0.118 1.60 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MURHD560/D