NSQA6V8AW5T2 Series Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com 1 5 Features • • • • • • • 2 Low Clamping Voltage Small SC−88A SMT Package Stand Off Voltage: 5 V Low Leakage Current < 1 mA Four Separate Unidirectional Configurations for Protection ESD Protection: IEC61000−4−2: Level 4 MILSTD 883C − Method 3015−6: Class 3 Pb−Free Packages are Available 3 4 SC−88A/SOT−323 CASE 419A Benefits • Provides Protection for ESD Industry Standards: IEC 61000, HBM • Minimize Power Consumption of the System • Minimize PCB Board Space MARKING DIAGRAM 4 Typical Applications • • • • • Instrumentation Equipment Serial and Parallel Ports Microprocessor Based Equipment Notebooks, Desktops, Servers Cellular and Portable Equipment 6x MG G 1 x Thermal Resistance − Junction−to−Ambient Above 25°C, Derate Symbol PPK Value 20 Unit W PD 380 mW °C/W mW/°C °C RqJA Operating Junction Temperature Range TJ 327 3.05 −40 to +125 Storage Temperature Range Lead Solder Temperature − Maximum 10 Seconds Duration Tstg TL −55 to +150 260 °C °C $8.0 kV IEC ^1000−4−2 (ESD) Contact Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse per Figure 6. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad. 2 3 = H for NSQA6V8AW5T2 X for NSQA12VAW5T2 = Date Code = Pb−Free Package M G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Peak Power Dissipation 8 20 msec Double Exponential Waveform (Note 1) Steady State Power − 1 Diode (Note 2) 5 (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSQA6V8AW5T2 SC−88A 3000/Tape & Reel NSQA6V8AW5T2G NSQA12VAW5T2 NSQA12VAW5T2G SC−88A 3000/Tape & Reel (Pb−Free) SC−88A 3000/Tape & Reel SC−88A 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 5 1 Publication Order Number: NSQA6V8AW5T2/D NSQA6V8AW5T2 Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR VC VBR VRWM Working Peak Reverse Voltage V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C IF Parameter IPP Uni−Directional Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VBR 6.4 6.8 7.1 V Leakage Current (VRWM = 5.0 V) IR − − 1.0 mA Clamping Voltage 1 (IPP = 1.6 A) (Note 4) VC − − 13 V Maximum Peak Pulse Current (Note 4) IPP − − 1.6 A Junction Capacitance − (VR = 0 V, f = 1 MHz) − (VR = 3.0 V, f = 1 MHz) CJ − − 12 6.7 15 9.5 pF Clamping Voltage − Per IEC61000−4−2 VC NSQA6V8AW5T2 Breakdown Voltage (IT = 1 mA) (Note 3) Figures 1 and 2 V NSQA12VAW5T2 VBR 11.4 12.0 12.7 V Leakage Current (VRWM = 9.0 V) Breakdown Voltage (IT = 5 mA) (Note 3) IR − − 0.05 mA Zener Impedence (IT = 5 mA) ZZ − − 30 W Clamping Voltage 1 (IPP = 0.9 A) (Note 4) VC − − 23 V Maximum Peak Pulse Current (Note 4) IPP − − 0.9 A Junction Capacitance − (VR = 0 V, f = 1 MHz) CJ − − 15 pF Clamping Voltage − Per IEC61000−4−2 (Note 5) VC 3. VBR is measured at pulse test current IT. 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. http://onsemi.com 2 Figures 1 and 2 V NSQA6V8AW5T2 Series Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 http://onsemi.com 3 NSQA6V8AW5T2 Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 4 80 NSQA6V8AW5T2 Series % OF RATED POWER OR IPP 100 10 1 1 10 100 1000 90 80 70 60 50 40 30 20 10 0 0 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Width Figure 7. Power Derating Curve 0.16 14 0.14 12 0.04 0.02 2 0.12 150 TA = 25°C 10 0.10 8 0.08 6V 6 0.06 0 25 t, TIME (ms) TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY IR, REVERSE LEAKAGE (mA) 110 4 −60 −40 −20 0 20 40 60 80 0 100 12 V 0 1 2 3 4 T, TEMPERATURE (°C) BIAS VOLTAGE (V) Figure 8. Reverse Leakage versus Temperature Figure 9. Capacitance 1 IF, FORWARD CURRENT (A) Ppk, PEAK SURGE POWER (W) 100 0.1 0.01 0.001 TA = 25°C 0.6 0.8 1.0 1.2 1.4 VF, FORWARD VOLTAGE (V) Figure 10. Forward Voltage http://onsemi.com 5 1.6 1.8 5 6 NSQA6V8AW5T2 Series PACKAGE DIMENSIONS SC−88A/SOT−323/SC−70 5−LEAD PACKAGE CASE 419A−02 ISSUE J A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 3 D 5 PL 0.2 (0.008) B M DIM A B C D G H J K N S M N J INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NSQA6V8AW5T2/D