Composite Transistors XP01501 (XP1501) Silicon NPN epitaxial planar type (0.425) For general amplification Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number Parameter Symbol Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCBO VCEO VEBO 60 50 7 V V V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ • 2SD0601A (2SD601A) × 2 1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 5R Internal Connection 5 4 Tr1 Tr2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA hFE VCE = 10 V, IC = 2 mA 160 460 hFE(Small/ VCE = 10 V, IC = 2 mA 0.50 Forward current transfer ratio hFE ratio * Conditions Min Typ Max Unit V 0.99 Large) Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF 0.3 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: August 2003 SJJ00146BED 1 XP01501 PT Ta IC VCE IC I B 60 250 240 Ta = 25°C VCE = 10 V Ta = 25°C 200 150 100 50 120 µA 40 100 µA 30 80 µA 60 µA 20 40 µA 10 0 0 40 80 120 160 2 4 IB VBE Collector current IC (mA) Base current IB (mA) 10 0.8 0.6 0.4 VCE = 10 V 160 25°C 120 Ta = 75°C 80 −25°C 40 0.4 0.6 0.8 0 1.0 0 Base-emitter voltage VBE (V) 0.4 0.8 Ta = 75°C 25°C 300 −25°C 200 100 0 10−1 1 1.6 10 Collector current IC (mA) 102 IC / IB = 10 1 25°C 10−1 Ta = 75°C −25°C 10−2 1 102 10 NV IC 180 120 60 VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25°C 160 120 Rg = 100 kΩ 80 22 kΩ 4.7 kΩ 40 –10 Emitter current IE (mA) SJJ00146BED 1.0 240 VCB = 10 V Ta = 25°C –1 0.8 Collector current IC (mA) 240 0 −10−1 0.6 10 10−1 2.0 Noise voltage NV (mV) Transition frequency fT (MHz) 500 0.4 102 fT I E VCE = 10 V 400 1.2 300 0.2 Base current IB (mA) Base-emitter voltage VBE (V) hFE IC 600 0 VCE(sat) IC 200 0.2 Forward current transfer ratio hFE 8 IC VBE 1.0 2 6 240 VCE = 10 V Ta = 25°C 0.2 80 Collector-emitter voltage VCE (V) 1.2 0 120 0 0 Ambient temperature Ta (°C) 0 160 40 20 µA Collector-emitter saturation voltage VCE(sat) (V) 0 140 µA Collector current IC (mA) 50 200 Collector current IC (mA) Total power dissipation PT (mW) IB = 160 µA –102 0 10 102 Collector current IC (µA) 103 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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