PANASONIC XP1501

Composite Transistors
XP01501 (XP1501)
Silicon NPN epitaxial planar type
(0.425)
For general amplification
Unit: mm
0.20±0.05
5
0.12+0.05
–0.02
4
5˚
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
0.2±0.1
1.25±0.10
2.1±0.1
■ Features
1
3
2
(0.65) (0.65)
1.3±0.1
2.0±0.1
■ Basic Part Number
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO
VCEO
VEBO
60
50
7
V
V
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
0.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.9+0.2
–0.1
10˚
• 2SD0601A (2SD601A) × 2
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: 5R
Internal Connection
5
4
Tr1
Tr2
1
2
3
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
60
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
µA
hFE
VCE = 10 V, IC = 2 mA
160
460

hFE(Small/
VCE = 10 V, IC = 2 mA
0.50
Forward current transfer ratio
hFE ratio *
Conditions
Min
Typ
Max
Unit
V

0.99
Large)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCE(sat)
fT
Cob
IC = 100 mA, IB = 10 mA
0.1
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
0.3
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2003
SJJ00146BED
1
XP01501
PT  Ta
IC  VCE
IC  I B
60
250
240
Ta = 25°C
VCE = 10 V
Ta = 25°C
200
150
100
50
120 µA
40
100 µA
30
80 µA
60 µA
20
40 µA
10
0
0
40
80
120
160
2
4
IB  VBE
Collector current IC (mA)
Base current IB (mA)
10
0.8
0.6
0.4
VCE = 10 V
160
25°C
120
Ta = 75°C
80
−25°C
40
0.4
0.6
0.8
0
1.0
0
Base-emitter voltage VBE (V)
0.4
0.8
Ta = 75°C
25°C
300
−25°C
200
100
0
10−1
1
1.6
10
Collector current IC (mA)
102
IC / IB = 10
1
25°C
10−1
Ta = 75°C
−25°C
10−2
1
102
10
NV  IC
180
120
60
VCE = 10 V
GV = 80 dB
200 Function = FLAT
Ta = 25°C
160
120
Rg = 100 kΩ
80
22 kΩ
4.7 kΩ
40
–10
Emitter current IE (mA)
SJJ00146BED
1.0
240
VCB = 10 V
Ta = 25°C
–1
0.8
Collector current IC (mA)
240
0
−10−1
0.6
10
10−1
2.0
Noise voltage NV (mV)
Transition frequency fT (MHz)
500
0.4
102
fT  I E
VCE = 10 V
400
1.2
300
0.2
Base current IB (mA)
Base-emitter voltage VBE (V)
hFE  IC
600
0
VCE(sat)  IC
200
0.2
Forward current transfer ratio hFE
8
IC  VBE
1.0
2
6
240
VCE = 10 V
Ta = 25°C
0.2
80
Collector-emitter voltage VCE (V)
1.2
0
120
0
0
Ambient temperature Ta (°C)
0
160
40
20 µA
Collector-emitter saturation voltage VCE(sat) (V)
0
140 µA
Collector current IC (mA)
50
200
Collector current IC (mA)
Total power dissipation PT (mW)
IB = 160 µA
–102
0
10
102
Collector current IC (µA)
103
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL