VISHAY TN0601L

TN0601L, VN0606L, VN66AFD
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
TN0601L
VN0606L
rDS(on) Max (W)
VGS(th) (V)
ID (A)
1.8 @ VGS = 10 V
0.5 to 2
0.47
3 @ VGS = 10 V
0.8 to 2
0.33
3 @ VGS = 10 V
0.8 to 2.5
1.46
60
VN66AFD
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Low On-Resistance: 1.2 W
Low Threshold: <1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
TO-226AA
(TO-92)
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
1
S
G
TO-220SD
(Tab Drain)
Device Marking
Front View
2
Device Marking
Front View
TN0601L
S
1
“S” TN
0601L
xxyy
G
2
VN66AFD
“S” xxyy
3
“S” = Siliconix Logo
xxyy = Date Code
VN66AFD
VN0606L
D
“S” VN
0606L
xxyy
3
Top View
TN0601L
VN0606L
D
Top View
“S” = Siliconix Logo
xxyy = Date Code
VN66AFD
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Symbol
TN0601L
VN0606L
VN66AFDb
Drain-Source Voltage
VDS
60
60
60
Gate-Source Voltage
VGS
"20
"30
"30
0.47
0.33
1.46
0.29
0.21
0.92
1.5
1.6
3
0.8
0.8
15
0.32
0.32
6
156
156
Parameter
Continuous Drain Current
(TJ = 150_C)
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation
ID
IDM
TA= 25_C
TA= 100_C
PD
Thermal Resistance, Junction-to-Ambient
RthJA
Thermal Resistance, Junction-to-Case
RthJC
Operating Junction and Storage Temperature Range
TJ, Tstg
8.3
–55 to 150
Unit
V
A
W
_
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-1
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TN0601L
Parameter
Symbol
Test Conditions
Typa
Min
V(BR)DSS
VGS = 0 V, ID = 10 mA
70
60
VDS = VGS, ID = 0.25 mA
1.6
0.5
VDS = VGS, ID = 1 mA
1.7
Max
VN0606L
Min
Max
VN66AFD
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VGS(th)
60
2
V
0.8
VDS = 0 V, VGS = "30 V
Gate-Body Leakage
0.8
1
10
TC = 125_C
rDS(on)
VDS = 10 V, VGS = 4.5 V
0.5
0.25
VDS = 10 V, VGS = 10 V
2.4
1
VGS = 3.5 V, ID = 0.04 A
4
5
VGS = 4.5 V, ID = 0.25 A
2
3
3.8
6
VGS = 5 V, ID = 0.3 A
2.3
VGS = 10 V, ID = 0.5 A
1.2
TJ = 125_C
VGS = 10 V, ID = 1 A
TC = 125_C
mA
m
100
TJ = 125_C
Drain-Source On-Resistanceb
1
10
VDS = 48 V, VGS = 0 V
TJ = 125_C
nA
500
TJ = 125_C
ID(on)
"500
"10
VDS = 60 V, VGS = 0 V
On-State Drain Currentb
2.5
"100
TC = 125_C
IGSS
IDSS
2
"100
VDS = 0 V, VGS = "20 V
Zero Gate VoltageDrain Current
60
1.5
5
3
2.3
1.8
3
2.5
gfs
VDS = 10 V, ID = 0.5 A
350
Common Source Output Conductanceb
gos
VDS = 10 V, ID = 0.1 A
0.3
W
6
1.3
Forward Transconductanceb
A
1.5
6
200
170
170
mS
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
35
60
50
50
25
50
40
40
6
10
10
10
8
15
10
15
9
15
10
15
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 25 V, RL = 23 W
ID ^ 1 A, VGEN = 10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing..
b. Pulse test: PW v 300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
ns
VNDQ06
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0
Output Characteristics for Low Gate Drive
100
8V
VGS = 10 V
VGS = 10 V
7V
2.8 V
1.6
80
ID – Drain Current (mA)
ID – Drain Current (A)
2.6 V
6V
1.2
5V
0.8
4V
0.4
60
2.4 V
40
2.2 V
20
0
0
0
1
2
3
4
5
0
0.4
VDS – Drain-to-Source Voltage (V)
1.2
1.6
2.0
On-Resistance vs. Gate-to-Source Voltage
2.8
TJ = –55_C
25_C
1.0 A
2.4
rDS(on) – On-Resistance ( Ω )
VDS = 15 V
0.8
0.8
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
1.0
125_C
ID – Drain Current (A)
1.8 V
2.0 V
3V
0.6
0.4
0.2
2.0
0.5 A
1.6
1.2
0.8
ID = 0.1 A
0.4
0
0
0
2
4
6
8
0
10
8
12
16
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
2.5
20
2.25
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
rDS(on) – Drain-Source On-Resistance ( Ω )
4
VGS – Gate-Source Voltage (V)
2.0
VGS = 10 V
1.5
1.0
0.5
0
VGS = 10 V
2.00
I D = 1.0 A
1.75
0.2 A
1.50
1.25
1.00
0.75
0.50
0
0.4
0.8
1.2
ID – Drain Current (A)
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
1.6
2.0
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
www.vishay.com
11-3
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
10
120
VGS = 0 V
VDS = 5 V
f = 1 MHz
100
C – Capacitance (pF)
ID – Drain Current (mA)
TJ = 150_C
1
25_C
0.1
80
60
C iss
40
C oss
20
125_C
C rss
–55_C
0.01
0
0.5
1.0
1.5
2.0
0
VGS – Gate-to-Source Voltage (V)
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
15.0
100
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
I D = 1.0 A
50
12.5
t – Switching Time (ns)
VGS – Gate-to-Source Voltage (V)
10
VDS = 30 V
10.0
7.5
5.0
VDS = 48 V
2.5
20
10
td(off)
tr
5
td(on)
tf
2
1
0
0
100
200
300
400
500
0.1
600
1
10
ID – Drain Current (A)
Qg – Total Gate Charge (pC)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
0.01
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
0.1
0.5
1
5
10
50
100
500
1K
5K
10 K
t1 – Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 70201
S-04279—Rev. E, 16-Jul-01