TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46 60 VN66AFD FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92) Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage 1 S G TO-220SD (Tab Drain) Device Marking Front View 2 Device Marking Front View TN0601L S 1 “S” TN 0601L xxyy G 2 VN66AFD “S” xxyy 3 “S” = Siliconix Logo xxyy = Date Code VN66AFD VN0606L D “S” VN 0606L xxyy 3 Top View TN0601L VN0606L D Top View “S” = Siliconix Logo xxyy = Date Code VN66AFD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol TN0601L VN0606L VN66AFDb Drain-Source Voltage VDS 60 60 60 Gate-Source Voltage VGS "20 "30 "30 0.47 0.33 1.46 0.29 0.21 0.92 1.5 1.6 3 0.8 0.8 15 0.32 0.32 6 156 156 Parameter Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25_C TA= 100_C PD Thermal Resistance, Junction-to-Ambient RthJA Thermal Resistance, Junction-to-Case RthJC Operating Junction and Storage Temperature Range TJ, Tstg 8.3 –55 to 150 Unit V A W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Document Number: 70201 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 TN0601L, VN0606L, VN66AFD Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN0601L Parameter Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = 10 mA 70 60 VDS = VGS, ID = 0.25 mA 1.6 0.5 VDS = VGS, ID = 1 mA 1.7 Max VN0606L Min Max VN66AFD Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VGS(th) 60 2 V 0.8 VDS = 0 V, VGS = "30 V Gate-Body Leakage 0.8 1 10 TC = 125_C rDS(on) VDS = 10 V, VGS = 4.5 V 0.5 0.25 VDS = 10 V, VGS = 10 V 2.4 1 VGS = 3.5 V, ID = 0.04 A 4 5 VGS = 4.5 V, ID = 0.25 A 2 3 3.8 6 VGS = 5 V, ID = 0.3 A 2.3 VGS = 10 V, ID = 0.5 A 1.2 TJ = 125_C VGS = 10 V, ID = 1 A TC = 125_C mA m 100 TJ = 125_C Drain-Source On-Resistanceb 1 10 VDS = 48 V, VGS = 0 V TJ = 125_C nA 500 TJ = 125_C ID(on) "500 "10 VDS = 60 V, VGS = 0 V On-State Drain Currentb 2.5 "100 TC = 125_C IGSS IDSS 2 "100 VDS = 0 V, VGS = "20 V Zero Gate VoltageDrain Current 60 1.5 5 3 2.3 1.8 3 2.5 gfs VDS = 10 V, ID = 0.5 A 350 Common Source Output Conductanceb gos VDS = 10 V, ID = 0.1 A 0.3 W 6 1.3 Forward Transconductanceb A 1.5 6 200 170 170 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 35 60 50 50 25 50 40 40 6 10 10 10 8 15 10 15 9 15 10 15 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v 300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDQ06 Document Number: 70201 S-04279—Rev. E, 16-Jul-01 TN0601L, VN0606L, VN66AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 Output Characteristics for Low Gate Drive 100 8V VGS = 10 V VGS = 10 V 7V 2.8 V 1.6 80 ID – Drain Current (mA) ID – Drain Current (A) 2.6 V 6V 1.2 5V 0.8 4V 0.4 60 2.4 V 40 2.2 V 20 0 0 0 1 2 3 4 5 0 0.4 VDS – Drain-to-Source Voltage (V) 1.2 1.6 2.0 On-Resistance vs. Gate-to-Source Voltage 2.8 TJ = –55_C 25_C 1.0 A 2.4 rDS(on) – On-Resistance ( Ω ) VDS = 15 V 0.8 0.8 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 1.0 125_C ID – Drain Current (A) 1.8 V 2.0 V 3V 0.6 0.4 0.2 2.0 0.5 A 1.6 1.2 0.8 ID = 0.1 A 0.4 0 0 0 2 4 6 8 0 10 8 12 16 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 2.5 20 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) 4 VGS – Gate-Source Voltage (V) 2.0 VGS = 10 V 1.5 1.0 0.5 0 VGS = 10 V 2.00 I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50 0 0.4 0.8 1.2 ID – Drain Current (A) Document Number: 70201 S-04279—Rev. E, 16-Jul-01 1.6 2.0 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TN0601L, VN0606L, VN66AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 120 VGS = 0 V VDS = 5 V f = 1 MHz 100 C – Capacitance (pF) ID – Drain Current (mA) TJ = 150_C 1 25_C 0.1 80 60 C iss 40 C oss 20 125_C C rss –55_C 0.01 0 0.5 1.0 1.5 2.0 0 VGS – Gate-to-Source Voltage (V) 20 30 40 50 VDS – Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 15.0 100 VDD = 25 V RG = 25 W VGS = 0 to 10 V I D = 1.0 A 50 12.5 t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 10 VDS = 30 V 10.0 7.5 5.0 VDS = 48 V 2.5 20 10 td(off) tr 5 td(on) tf 2 1 0 0 100 200 300 400 500 0.1 600 1 10 ID – Drain Current (A) Qg – Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 0.5 1 5 10 50 100 500 1K 5K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70201 S-04279—Rev. E, 16-Jul-01