VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/–3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage Dual-In-Line N D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 4 11 G2 5 10 G3 S2 6 9 S3 D2 7 8 D3 NC P Device Marking Top View P VQ3001J “S” fllxxyy NC VQ3001P “S” fllxxyy N “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View Plastic: VQ3001J Sidebraze: VQ3001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Symbol N-Channel P-Channel VDS 30 30 "20 "20 "20 "20 VQ3001J Gate-Source Voltage Continuous Drain Current (TJ = 150_C) VQ3001P TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation VGS ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range 0.85 –0.6 0.52 –0.37 3 –2 Total Quad V A 1.3 1.3 2 0.52 0.52 0.8 RthJA 96.2 96.2 TJ, Tstg –55 to 150 PD Unit 62.5 –55 to 150 W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70221 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-1 VQ3001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Condition N-Channel P-Channel Typa Min Min 30 Max Max Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero-Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA 55 VGS = 0 V, ID = –10 mA –55 VDS = VGS, ID = 1 mA 1.5 VDS = VGS, ID = –1 mA –3.1 –30 0.8 V 2.5 –2 VDS = 0 V, VGS = "20 V "100 "100 VDS = 0 V, VGS = "20 V, TJ = 125_C "500 "500 VDS = 24 V, VGS = 0 V 10 VDS = –24 V, VGS = 0 V IDSS Drain-Source On-State Resistanceb Forward Transconductanceb ID(on) m mA –500 VDS = 10 V, VGS = 12 V 3 VDS = –10 V, VGS = –12 V –2 2 1.2 1.75 VGS = 12 V, ID = 1 A 0.81 1.0 VGS = –12 V, ID = –1 A 1.6 VGS = 12 V, ID = 1 A, TJ = 125_C 1.65 VGS = –12 V, ID = –1 A, TJ = 125_C 2.7 VDS = 10 V, ID = 0.5 A 500 VDS = –10 V, ID = –0.5 A 390 gfs A –1.5 VGS = 5 V, ID = 0.2 A rDS(on) nA –10 500 VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = –24 V, VGS = 0 V, TJ = 125_C On-State Drain Currentb –4.5 2.0 W 2.0 4.0 250 mS 200 Dynamic 38 Input Capacitance Output Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz Coss P-Channel VDS = –15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss tON 33 150 110 45 8 100 VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W 9 pF 35 15 N-Channel Turn-On Time 110 60 60 30 19 30 ns P-Channel Turn-Off Time tOFF VDD = –15 V, RL = 23 W ID ^ –0.6 A, VGEN = –10 V, RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. www.vishay.com 11-2 14 16 30 30 VNDQ03/VPEA03 Document Number: 70221 S-04279—Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 N-CHANNEL Output Characteristics for Low Gate Drive 200 7V 10 V 6V 2.9 V VGS = 10 V 160 ID – Drain Current (mA) ID – Drain Current (A) 1.6 5V 1.2 0.8 4V 0.4 2.7 V 120 2.5 V 80 2.3 V 40 3V 2.1 V 1.7 V 2V 0 0 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 500 VDS = 15 V 3 rDS(on) – On-Resistance ( Ω ) ID – Drain Current (mA) 400 300 200 TJ = 125_C 100 ID = 0.2 A 0.5 A 2 1.0 A 1 25_C –55_C 0 0 0 1 2 3 4 0 5 8 12 16 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.5 rDS(on) – Drain-Source On-Resistance ( Ω ) 4 2.0 VGS = 4.5 V 6V 1.5 1.0 10 V 0.5 0 20 2.25 VGS = 10 V 2.00 1.75 ID = 0.5 A 1.50 0.1 A 1.25 1.00 0.75 0.50 0 0.5 1.0 1.5 2.0 ID – Drain Current (A) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 2.5 3.0 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region N-CHANNEL Capacitance 10 120 VDS = 10 V C – Capacitance (pF) TJ = 150_C ID – Drain Current (mA) VGS = 0 V f = 1 MHz 100 1 100_C 25_C 0.1 80 60 40 Ciss Coss 20 Crss –55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 10 VGS – Gate-to-Source Voltage (V) Gate Charge 50 VDD = 25 V RG = 25 W VGS = 0 to 10 V 5 t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 40 Load Condition Effects on Switching ID = 1 A 4 VDS = 15 V 3 24 V 2 10 td(off) td(on) tf tr 1 1 0.1 0 0 80 160 240 320 400 1 Qg – Total Gate Charge (pC) 10 ID – Drain Current (A) Drive Resistance Effects on Switching Transconductance 500 100 TJ = –55_C VDD = 25 V RL = 24 W VGS = 0 to 10 V ID = 1 A 25_C gfs – Forward Transconductance (µS) t – Switching Time (ns) 30 100 6 td(off) 10 td(on) tf tr 400 150_C 300 200 VDS = 7.5 V 300 ms, 1% Duty Cycle Pulse Test 100 0 1 10 50 RG – Gate Resistance (W) www.vishay.com 11-4 20 VDS – Drain-to-Source Voltage (V) 100 0 100 200 300 400 500 ID – Drain Current (mA) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics P-CHANNEL Transfer Characteristics –2.0 VGS = –10 V –9 V –1000 –8 V –800 ID – Drain Current (A) –1.2 –7 V –0.8 –6 V –0.4 –5 V ID – Drain Current (mA) 125_C –1.6 TJ = –55_C 25_C –600 –400 –200 –4 V 0 0 0 –1 –2 –3 –4 VDS – Drain-to-Source Voltage (V) –5 0 –2 –4 –6 –8 VGS – Gate-to-Source Voltage (V) Capacitance Gate Charge –18 175 C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) VGS = 0 V f = 1 MHz 150 125 100 75 Ciss Coss 50 25 Crss –15 VDS = –15 V ID = –1 A –12 VDS = –24 V ID = –1 A –9 –6 –3 0 0 0 –5 –10 –15 –20 –25 0 –30 1000 2000 3000 4000 5000 Qg – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage –10 K 1.65 TJ = 150_C 1.50 TJ = 25_C –1 K 1.35 IS – Source Current (mA) rDS(on) – On-Resistance ( Ω ) (Normalized) –10 VGS = –4.5 V ID = –0.5 A 1.20 VGS = –10 V ID = –0.1 A 1.05 –100 –10 0.90 0.75 –50 –1 –25 0 25 50 75 100 TJ – Junction Temperature (_C) Document Number: 70221 S-04279—Rev. D, 16-Jul-01 125 150 0 –1.0 –2.0 –3.0 VSD – Source-to-Drain Voltage (V) –4.0 www.vishay.com 11-5 VQ3001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region On-Resistance vs. Gate-to-Source Voltage –10 K 3.0 VDS = –10 V ID = –0.5 A 2.5 TJ = 150_C –1 K ID – Drain Current (µA) rDS(on) – On-Resistance ( Ω ) P-CHANNEL 2.0 –0.2 A 1.5 100_C 25_C –100 –10 –55_C 1.0 –1 0 0 –4 –8 –12 –16 VGS – Gate-to-Source Voltage (V) www.vishay.com 11-6 –20 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VGS – Gate-Source Voltage (V) Document Number: 70221 S-04279—Rev. D, 16-Jul-01