ETC VN10KC

VN10KC
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
60
5 @ VGS = 10 V
0.8 to 2.5
0.31
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
D Inductive Load Drivers
Zener Diode Input Protected
Low On-Resistance: 3 W
Ultralow Threshold: 1.2 V
Low Input Capacitance: 38 pF
Low Input and Output Leakage
Extra ESD Protection
Low Offset Voltage
Low-Voltage Operation
High-Speed, Easily Driven
Low Error Voltage
SC-59
G
1
Marking Code: F1wll
3
S
F1 = Part Number Code for VN10KC
w = Week Code
ll = Lot Traceability
D
2
Top View
VN10KC
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
15/–0.3
Continuous Drain Current (TJ = 150_C)
_
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation
TA= 100_C
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
V
0.31
ID
IDM
TA= 25_C
Unit
0.20
A
0.6
0.6
PD
0.24
W
RthJA
208
_C/W
TJ, Tstg
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70967
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
VN10KC
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Symbol
Test Conditions
Typa
Min
V(BR)DSS
VGS = 0 V, ID = 100 mA
120
60
VGS(th)
VDS = VGS, ID = 1 mA
1.2
0.8
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 15 V
1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 10 V, VGS = 10 V
1
VGS = 5 V, ID = 0.2 A
4
7.5
rDS(on)
VGS = 10 V, ID = 0.5 A
3
5
Forward Transconductanceb
gfs
VDS = 10 V, ID = 0.5 A
300
Common Source Output Conductanceb
gos
VDS = 7.5 V, ID = 0.05 A
0.2
Parameter
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
2.5
100
VDS = 48 V, VGS = 0 V
Drain-Source On-Resistanceb
nA
10
500
TA = 125_C
TA = 125_C
V
0.75
5.6
m
mA
A
W
9
100
mS
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
38
60
16
25
2
5
7
10
9
10
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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11-2
VDD = 15 V, RL = 23 W
ID ^ 0.6 A, VGEN = 10 V
RG = 25 W
ns
VNDP06
Document Number: 70967
S-04279—Rev. C, 16-Jul-01
VN10KC
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
50
1.0
6V
VGS = 2.0 V
5V
0.8
1.9 V
ID – Drain Current (mA)
ID – Drain Current (mA)
40
30
1.8 V
20
1.6 V
1.5 V
10
VGS = 10 V
0.6
4V
0.4
3V
0.2
1.4 V
1.2 V
2V
0
0
0
0.4
0.8
1.2
1.6
2.0
0
1
VDS – Drain-to-Source Voltage (V)
2
3
4
5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.5
7
VDS = 15 V
TA = 25_C
6
rDS(on) – On-Resistance ( Ω )
0.4
ID – Drain Current (A)
TA = –55_C
25_C
0.3
125_C
0.2
0.1
5
250 mA
4
3
500 mA
ID = 50 mA
2
1
0
0
0
1
2
3
4
0
5
8
12
16
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
5
20
2.25
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
rDS(on) – Drain-Source On-Resistance ( Ω )
4
VGS – Gate-Source Voltage (V)
4
VGS = 10 V
3
2
1
0
VGS = 10 V
2.00
1.75
ID = 0.5 A
1.50
0.1 A
1.25
1.00
0.75
0.50
0
0.2
0.4
0.6
ID – Drain Current (A)
Document Number: 70967
S-04279—Rev. C, 16-Jul-01
0.8
1.0
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
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11-3
VN10KC
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
10
100
VGS = 0 V
f = 1 MHz
C – Capacitance (pF)
ID – Drain Current (A)
80
1
TA = 150_C
0_C
100_C
25_C
0.1
60
Ciss
40
Coss
20
Crss
–55_C
0.01
0
0
0.25
0.5
0.75
1.0
1.25
1.5
0
1.75
VGS – Gate-to-Source Voltage (V)
20
30
50
40
VDS – Drain-to-Source Voltage (V)
Gate Charge
Load Condition Effects on Switching
100
15.0
ID = 0.5 A
VDD = 15 V
RL = 25 W
VGS = 0 to 10 V
12.5
30 V
t – Switching Time (ns)
VGS – Gate-to-Source Voltage (V)
10
10.0
7.5
5.0
48 V
10
td(off)
tf
td(on)
2.5
tr
1
0
0
100
200
300
400
Qg – Total Gate Charge (pC)
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11-4
500
600
0.1
0.5
1.0
ID – Drain Current (A)
Document Number: 70967
S-04279—Rev. C, 16-Jul-01