CSPEMI306A 6-Channel EMI Filter Array with ESD Protection Product Description The CSPEMI306A is a six channel low*pass filter array that reduces EMI/RFI emissions while at the same time providing ESD protection. It is used on data ports on mobile devices. To reduce EMI/RFI emissions, the CSPEMI306A integrates a pi*style filter (C*R*C) for each of the 6 channels. Each high quality filter provides greater than 30 dB attenuation in the 800*2700 MHz range. These pi*style filters also support bidirectional filtering, controlling EMI both to and from a data port connector. In addition, the CSPEMI306A provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The input pins safely dissipate ESD strikes of ±15 kV, exceeding the maximum requirement of the IEC 61000*4*2 international standard. Using the MIL*STD*883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than ±30 kV. The CSPEMI306A is particularly well suited for portable electronics (e.g. cellular telephones, PDAs, notebook computers) because of its small package footprint and low weight. The CSPEMI306A is available in a space*saving, low*profile Chip Scale Package with optional lead*free finishing. Features • Six Channels of EMI Filtering for Data Ports • Pi*Style EMI Filters in a Capacitor*Resistor*Capacitor (C*R*C) Network • Greater than 32 dB Attenuation at 1 GHz • ±15 kV ESD Protection on each Channel http://onsemi.com WLCSP15 CASE 567BS MARKING DIAGRAM + 306A 306A = CSPEMI306A ORDERING INFORMATION Device Package Shipping† CSPEMI306A CSP−15 (Pb−Free) 3500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (IEC 61000−4−2 Level 4, Contact Discharge) • ±30 kV ESD Protection on each Channel (HBM) • Chip Scale Package Features Extremely Low Lead Inductance for Optimum Filter and ESD Performance • 15−Bump, 2.960 mm x 1.330 mm Footprint Chip Scale Package • (CSP) These Devices are Pb−Free and are RoHS Compliant Applications • • • • • • EMI Filtering and ESD Protection for both Data and I/O Ports Wireless Handsets Handheld PCs / PDAs MP3 Players Notebooks Desktop PCs © Semiconductor Components Industries, LLC, 2011 May, 2011 − Rev. 3 1 Publication Order Number: CSPEMI306A/D CSPEMI306A ELECTRICAL SCHEMATIC 100 W FILTERn* FILTERn* 30 pF 30 pF GND (Pins B1−B3) 1 of 6 EMI/RFI + ESD Channels *See Package/Pinout Diagrams for expanded pin information. PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS Pin(s) Name Description A1 FILTER1 Filter Channel 1 A2 FILTER2 Filter Channel 2 A3 FILTER3 Filter Channel 3 A A4 FILTER4 Filter Channel 4 B A5 FILTER5 Filter Channel 5 A6 FILTER6 Filter Channel 6 B1−B3 GND Device Ground C1 FILTER1 Filter Channel 1 C2 FILTER2 Filter Channel 2 C3 FILTER3 Filter Channel 3 C4 FILTER4 Filter Channel 4 C5 FILTER5 Filter Channel 5 C6 FILTER6 Filter Channel 6 Orientation Marking (see Note) + 1 Top View (Bumps Down View) 4 5 2 3 6 306A C Bottom View (Bumps Up View) C1 Orientation Marking C2 B1 A1 A1 C3 C4 C5 B2 A2 A3 A4 C6 B3 A5 A6 CSPEMI306A CSP Package Note: Lead−free devices are specified by using a “+” character for the top side orientation mark. SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units −65 to +150 °C DC Power per Resistor 100 mW DC Package Power Rating 600 mW Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STANDARD OPERATING CONDITIONS Parameter Operating Temperature Range http://onsemi.com 2 Rating Units −40 to +85 °C CSPEMI306A Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter R Resistance C Capacitance Conditions Temperature Coefficient of Resistance TCC Temperature Coefficient of Capacitance At 2.5 V DC Diode Voltage (reverse bias) IDIODE = 10 mA ILEAK Diode Leakage Current (reverse bias) VDIODE = 3.3 V VSIG Signal Voltage Positive Clamp Negative Clamp ILOAD = 10 mA VESD In−system ESD Withstand Voltage a) Human Body Model, MIL−STD−883, Method 3015 b) Contact Discharge per IEC 61000−4−2 Level 4 (Notes 2 and 4) Clamping Voltage during ESD Discharge MIL−STD−883 (Method 3015), 8 kV Positive Transients Negative Transients (Notes 2, 3 and 4) Cut−off frequency ZSOURCE = 50 W, ZLOAD = 50 W R = 100 W, C = 30 pF VCL fC Typ Max Units 80 100 120 W 24 30 36 pF At 2.5 V DC TCR VDIODE Min 1200 ppm/°C −300 ppm/°C 5.5 V 100 5.6 −0.4 6.8 −0.8 9.0 −1.5 nA V kV ±30 ±15 V +10 −5 58 MHz 1. TA = 25°C unless otherwise specified. 2. ESD applied to input and output pins with respect to GND, one at a time. 3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping voltage is measured at Pin C1. 4. Unused pins are left open. PERFORMANCE INFORMATION Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) Figure 1. Insertion Loss vs. Frequency (A1−C1 to GND B2) http://onsemi.com 3 CSPEMI306A PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) Figure 2. Insertion Loss vs. Frequency (A2−C2 to GND B2) Figure 3. Insertion Loss vs. Frequency (A3−C3 to GND B2) http://onsemi.com 4 CSPEMI306A PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) Figure 4. Insertion Loss vs. Frequency (A4−C4 to GND B2) Figure 5. Insertion Loss vs. Frequency (A5−C5 to GND B2) http://onsemi.com 5 CSPEMI306A PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment) Figure 6. Insertion Loss vs. Frequency (A6−C6 to GND B2) Figure 7. Comparison of Filter Response Curves for CSPEMI306A vs. DC Bias http://onsemi.com 6 CSPEMI306A PERFORMANCE INFORMATION (Cont’d) Figure 8. Filter Capacitance vs. Input Voltage over Temperature (normalized to capacitance at 2.5 VDC and 255C) Figure 9. Resistance vs. Temperature (normalized to resistance at 255C) http://onsemi.com 7 CSPEMI306A APPLICATION INFORMATION Parameter Value Pad Size on PCB 0.240 mm Pad Shape Round Pad Definition Non−Solder Mask defined pads Solder Mask Opening 0.290 mm Round Solder Stencil Thickness 0.125 mm − 0.150 mm Solder Stencil Aperture Opening (laser cut, 5% tapered walls) 0.300 mm Round Solder Flux Ratio 50/50 by volume Solder Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A) Tolerance − Edge To Corner Ball ±50 mm Solder Ball Side Coplanarity ±20 mm Maximum Dwell Time Above Liquidous 60 seconds Maximum Soldering Temperature for Lead−free Devices using a Lead−free Solder Paste 260°C Non−Solder Mask Defined Pad 0.240 mm DIA. Solder Stencil Opening 0.300 mm DIA. Solder Mask Opening 0.290 mm DIA. Figure 10. Recommended Non−Solder Mask Defined Pad Illustration Temperature (5C) 250 200 150 100 50 0 1:00.0 2:00.0 3:00.0 Time (minutes) 4:00.0 Figure 11. Lead−free (SnAgCu) Solder Ball Reflow Profile http://onsemi.com 8 CSPEMI306A PACKAGE DIMENSIONS WLCSP15, 2.96x1.33 CASE 567BS−01 ISSUE O PIN A1 REFERENCE 2X D ÈÈ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B E DIM A A1 A2 b D E eD eE 0.05 C 2X 0.05 C TOP VIEW A2 0.05 C A RECOMMENDED SOLDERING FOOTPRINT* 0.05 C NOTE 3 A1 C SIDE VIEW SEATING PLANE eD/2 15X 0.05 C A B 0.03 C PACKAGE OUTLINE A1 0.87 eD b eE 0.44 C 15X 0.50 PITCH B A 1 2 3 4 5 6 MILLIMETERS MIN MAX 0.65 0.56 0.21 0.27 0.40 REF 0.29 0.35 2.96 BSC 1.33 BSC 0.50 BSC 0.435 BSC 0.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7 8 9 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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