FREESCALE MRF377HR3_09

Freescale Semiconductor
Technical Data
Document Number: MRF377H
Rev. 2, 3/2009
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF377HR3
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
IDQ = 2000 mA, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Drain Efficiency ≥ 21%
ACPR ≤ - 58 dBc
• Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
IDQ = 2000 mA
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Drain Efficiency ≥ 27.5%
IMD ≥ - 31.3 dBc
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push - Pull Operation Only
• Integrated ESD Protection
• Excellent Thermal Stability
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
470 - 860 MHz, 45 W AVG., 32 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375G - 04, STYLE 1
NI - 860C3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Drain Current - Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
648
3.7
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
235
1.38
W
W/°C
Symbol
Value (1,2)
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
RθJC
0.27
0.29
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF377HR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
VGS(th)
—
2.8
—
Vdc
Gate Quiescent Voltage (3)
(VDS = 32 Vdc, ID = 2000 mAdc)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain - Source On - Voltage (1)
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
—
0.27
—
Vdc
Crss
—
3.2
—
pF
Off Characteristics
(1)
Drain - Source Breakdown Voltage (4)
(VGS = 0 Vdc, ID =10 μA)
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (3) (In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
Gps
16.5
18.2
—
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ηD
21
22.9
—
%
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ACPR
—
- 59.2
- 57
dBc
Typical Performances (3) (In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
1.
2.
3.
4.
Gps
dB
—
—
—
—
—
17.6
17.6
17.4
17.4
16.8
—
—
—
—
—
Each side of device measured separately.
Part is internally matched both on input and output.
Measurement made with device in push - pull configuration.
Drains are tied together internally as this is a total device value.
(continued)
MRF377HR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ηD
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
Min
Typ
Max
Unit
%
—
—
—
—
—
23.5
25.8
23.0
22.7
21.3
—
—
—
—
—
dBc
—
—
—
—
—
- 59.3
- 59.3
- 58.7
- 58.7
- 58.1
—
—
—
—
—
Typical Performances (1) (In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
Drain Efficiency
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ηD
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
IMD
dB
—
—
—
—
—
17.5
17.5
17.2
17.2
16.6
—
—
—
—
—
%
—
—
—
—
—
31.0
34.3
30.1
29.6
27.8
—
—
—
—
—
dBc
—
—
—
—
—
31.7
32.7
32.9
34.2
35.4
—
—
—
—
—
1. Measurement made with device in push - pull configuration.
MRF377HR3
RF Device Data
Freescale Semiconductor
3
Table 5. 845 - 875 MHz Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Surface Mount, 11 Ω (0805)
2508051107Y0
Fair - Rite
Balun 1, Balun 2
0.8 - 1GHz Xinger Balun
3A412
Anaran
C1
33 pF Chip Capacitor (0805)
08055J330JBS
AVX
C2
2.7 pF Chip Capacitor (0603)
06035J2R7BBS
AVX
C3
12 pF Chip Capacitor (0805)
08051J120GBS
AVX
C4, C5
6.8 pF Chip Capacitors (0805)
08051J6R8BBS
AVX
C6
2.7 pF Chip Capacitor (0805)
0805J2R7BBS
AVX
C7, C8, C9, C10
3.3 pF Chip Capacitors (0805)
08051J3R3BBS
AVX
C11, C12
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C13, C14, C15, C16
0.01 μF, 100 V Chip Capacitors
C1825C103J1GAC
Kemet
C17, C18
0.56 μF, 50 V Chip Capacitors
C1825C564J5RAC
Kemet
C19, C20
10 μF, 50 V Tantalum Chip Capacitors
T491D106K050AT
Kemet
C21, C22, C23, C24
47 μF, 16 V Tantalum Chip Capacitors
T491D476K016AT
Kemet
C25, C26
470 μF, 63 V Electrolytic Capacitors
EMVY630GTR471MMH0S
Nippon Chemi - Con
L1
12 nH Inductor (0603)
0603HC- 12NXJB
CoilCraft
L2
7.15 nH Inductor
1606 - 7
CoilCraft
L3, L4
10 nH Inductors (0603)
0603HC- 10NXJB
CoilCraft
R1, R2
24 Ω, 1/4 W, Chip Resistors
CRCW120624R0FKEA
Vishay
MRF377 Drain
MRF377 Gate
C19
C11
VGG
VDD
C22
C9
C26
C21
L3
Balun 1
C15
B1
WB1
R1
C2
L1
C18
Balun 2
WB3
C14
C3
C4
L2
C5
C7
C6
R2
C13
C24
VGG
C23
WB4
WB2
C1
B2
C8
C16
C17
L4
C25
C10
VDD
C12
C20
DS1152−A Rev 0
DS1152−B Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout
MRF377HR3
4
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
19
18.5
18
17.5
17
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
16.5
16
10
−30
IDQ = 1400 mA
−40
1600 mA
−50
1800 mA
2200 mA
−60
VDD = 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
−70
100
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 2. Two - Tone Power Gain versus
Output Power
Figure 3. Third Order Intermodulation Distortion
versus Output Power
−20
45
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
40
−30
−40
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
2000 mA
3rd Order
−50
5th Order
−60
7th Order
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
−70
−80
10
35
ηD
30
25
20
15
10
5
100
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
Figure 5. Two - Tone Drain Efficiency versus
Output Power
19
60
Gps
G ps , POWER GAIN (dB)
18
40
17
20
ηD
16
0
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
15
14
−20
−40
IMD
13
−60
12
−80
10
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB)
Gps
−20
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
MRF377HR3
RF Device Data
Freescale Semiconductor
5
f = 845 MHz
Zload
f = 875 MHz
Zsource
f = 875 MHz
f = 845 MHz
Zo = 10 Ω
VDD = 32 V, IDQ = 2000 mA, Pout = 45 W Avg., DVBT OFDM
f
MHz
Zsource
Ω
Zload
Ω
845
4.66 - j5.90
8.59 - j4.22
860
4.38 - j5.64
9.36 - j4.95
875
3.93 - j5.33
9.39 - j6.06
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 7. 845 - 875 MHz Narrowband Series Equivalent Source and Load Impedance
MRF377HR3
6
RF Device Data
Freescale Semiconductor
Table 6. 470—860 MHz Broadband Test Circuit Component Designations and Values
Part
Description
B1, B2
Ferrite Beads, Surface Mount, 30 Ω (0603)
Balun 1, Balun 2
Rogers 3.006, εr = 6.06, 1 oz Cu
C1
C2, C5
Part Number
Manufacturer
2506033007Y0
Fair - Rite
12 pF Chip Capacitor (0603)
06035J120GBS
AVX
12 pF Chip Capacitors (0805)
08051J120GBS
AVX
C3
3.9 pF Chip Capacitor (0805)
08051J3R9BBS
AVX
C4, C7, C12, C15, C17
8.2 pF Chip Capacitors (0805)
08051J8R2BBS
AVX
C6
3.3 pF Chip Capacitor (0805)
08051J3R3BBS
AVX
C8
0.4 - 2.5 pF Variable Capacitor
27283PC
Gigatronics
C9, C10
3.3 pF Chip Capacitors (0603)
06035J3R3BBS
AVX
C11, C14
10 pF Chip Capacitors (0805)
08051J100GBS
AVX
C13
4.7 pF Chip Capacitor (0805)
08051J4R7BBS
AVX
C16
2.2 pF Chip Capacitor (0603)
06035J2R2BBS
AVX
C18
2.2 pF Chip Capacitor (0805)
08051J2R2BBS
AVX
C19, C20, C21, C22
47 μF, 16 V Tantalum Chip Capacitors
T491D476K016AT
Kemet
C23, C26
2.2 μF, 50 V Ceramic Chip Capacitors
C1825C225J5RAC
Kemet
C24, C25, C27, C29
0.01 μF, 100 V Ceramic Chip Capacitors
C1825C103J1GAC
Kemet
C28, C30
0.56 μF, 50 V Ceramic Chip Capacitors
C1825C564J5GAC
Kemet
C31, C32
10 μF, 50 V Chip Capacitors
T491D106K010AT
Kemet
C33, C34
470 μF, 63 V Electrolytic Capacitors
EMVY630GTR471MMH0S
United Chemi - Con
L1, L2
15 nH Inductors (0603)
L0603150GGW003
AVX
L3, L4
12 nH Inductors (0603)
0603HC- 12NHJBU
CoilCraft
L5, L6
8 nH Coil Inductors
A03T - 5
CoilCraft
L7
22 nH Coil Inductor
B07T - 5
CoilCraft
L8
18.5 nH Coil Inductor
A05T - 5
CoilCraft
R1, R2
12.1 Ω, 1/16 W, Chip Resistors
CRCW060312R1FKEA
Vishay
MRF377HR3
RF Device Data
Freescale Semiconductor
7
C34
C20
VGG
VDD
C19
C32
L3 R1 C9
L1
C23 C24
L5
C27 C28
B1
C8
C6
C17
C3
L8
C11 C13
C14 C16
L7
C1
C5
C4
C12
C2
C18
C15
C7
B2
C26 C25
L2
L6
C29 C30
L4 R2 C10
C31
Balun 1
Balun 2
C22
VGG
VDD
C21
DS1047 Rev 4
DS1047 Rev 4
C33
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Multilayer Balun Mounting Detail
Topside View
Upside Down View
Figure 8. 470 - 860 MHz Broadband Test Circuit Component Layout
MRF377HR3
8
RF Device Data
Freescale Semiconductor
19
40
18
G ps , POWER GAIN (dB)
17
16
15
14
13
12
35
Gps
30
25
ηD
20
VDD = 32 Vdc, Pout = 45 W (Avg.), IDQ = 2000 mA
8K Mode DVBT OFDM
64 QAM Data Carrier Modulation
5 Symbols
−40
−45
−50
11
−55
10
−60
ACPR
9
420
480
540
600
660
720
780
−65
900
840
ACPR, ADJACENT CHANNEL POWER RATIO
ηD, DRAIN EFFICIENCY (%)
TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 9. Single - Channel DVBT OFDM
Broadband Performance
19
30
VDD = 32 Vdc, IDQ = 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
470 MHz
18
25
ηD, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dBc)
18.5
560 MHz
660 MHz
17.5
760 MHz
860 MHz
17
VDD = 32 Vdc
IDQ = 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
16.5
20
660 MHz
860 MHz
15
760 MHz
10
16
5
0
2
4
6
8 10
30
50
10
Pout, OUTPUT POWER (WATTS) AVG.
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Channel DVBT OFDM Broadband
Performance Power Gain versus Output Power
Figure 11. Single - Channel DVBT OFDM
Broadband Performance Drain Efficiency versus
Output Power
−56
−20
470 MHz
−60
−40
660 MHz
−50
760 MHz
860 MHz
−60
−62
−64
−66
7.61 MHz
−30
−58
(dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
470 MHz
560 MHz
VDD = 32 Vdc
IDQ = 2000 mA
8K Mode DVBT OFDM
64 QAM
Data Carrier Modulation
5 Symbols
−70
−80
560 MHz
−90
4 kHz BW
−100
4 kHz BW
−110
−68
10
100
−5
−4
−3
−2
−1
0
1
2
3
4
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 12. Single - Channel DVBT OFDM Broadband Performance
Adjacent Channel Power Ratio versus Output Power
Figure 13. 8K Mode DVBT OFDM Spectrum
5
MRF377HR3
RF Device Data
Freescale Semiconductor
9
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
17
45
40
Gps
G ps , POWER GAIN (dB)
16
15
35
30
ηD
14
25
VDD = 32 Vdc
Pout = 80 W (Avg.)
IDQ = 2000 mA
ATSC 8VSB
13
12
11
−15
−20
−25
10
−30
9 ACPR
8
420
480
−35
540
600
660
720
780
840
−45
900
ACPR, ADJACENT CHANNEL POWER RATIO
ηD, DRAIN EFFICIENCY (%)
18
f, FREQUENCY (MHz)
Figure 14. Single - Channel ATSC 8VSB
Broadband Performance
19
40
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
470 MHz
18
ηD, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dBc)
18.5
560 MHz
660 MHz
17.5
860 MHz
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
35
760 MHz
17
16.5
470 MHz
560 MHz
30
660 MHz
25
760 MHz
20
860 MHz
15
10
5
16
0
10
100
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single - Channel ATSC 8VSB Broadband
Performance Drain Efficiency versus Output Power
−25
−10
Reference
Point
−20
−30
−30
860 MHz
−40
−35
−50
470 MHz
−40
(dB)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single - Channel ATSC 8VSB Broadband
Performance Power Gain versus Output Power
660 MHz
760 MHz
IMRU
−60
−70
560 MHz
−80
VDD = 32 Vdc
IDQ = 2000 mA
ATSC 8VSB
−45
IMRL
−90
3.25 MHz
Offset
−100
−50
10
3.25 MHz
Offset
100
−4.0 −3.2
−2.4 −1.6 −0.8
0
0.8
1.6
2.4
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 17. Single - Channel ATSC 8VSB Broadband Performance
Adjacent Channel Power Ratio versus Output Power
Figure 18. ATSC 8VSB Spectrum
3.2
4.0
MRF377HR3
10
RF Device Data
Freescale Semiconductor
f = 470 MHz
f = 470 MHz
Zload
Zsource
Zo = 10 Ω
Zo = 10 Ω
f = 860 MHz
f = 860 MHz
Optimized for VDD = 32 V, IDQ = 2000 mA, Pout = 45 W Avg., DVBT OFDM
f
MHz
Zsource
Ω
Zload
Ω
470
5.79 - j2.40
6.21 - j1.69
560
6.63 - j2.63
5.66 - j1.12
660
6.57 - j4.03
6.76 - j1.00
760
6.67 - j4.55
6.57 - j1.91
860
5.34 - j6.28
7.37 - j5.45
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance
MRF377HR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
4
G
ccc
R
T A
M
B
M
Q
bbb
2X
L
M
J
T A
M
M
B
M
(LID)
2
1
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
(FLANGE)
5
4X
S
(INSULATOR)
bbb
M
T A
K
3
4X
M
B
M
4
B
D
bbb
M
ccc
T A
M
M
B
T A
M
M
B
M
F
N
(LID)
E
M
H
bbb
A
C
(INSULATOR)
M
T A
M
B
M
A
T
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.180
0.224
0.325
0.335
0.060
0.070
0.004
0.006
1.100 BSC
0.097
0.107
0.2125 BSC
0.135
0.165
0.425 BSC
0.852
0.868
0.851
0.869
0.118
0.138
0.395
0.405
0.394
0.406
0.010 REF
0.015 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
4.57
5.69
8.26
8.51
1.52
1.78
0.10
0.15
27.94 BSC
2.46
2.72
5.397 BSC
3.43
4.19
10.8 BSC
21.64
22.05
21.62
22.07
3.00
3.30
10.03
10.29
10.01
10.31
0.25 REF
0.38 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375G - 04
ISSUE G
NI - 860C3
MRF377HR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Mar. 2009
Description
• Data sheet revised to reflect part status change, removing MRF377HR5. Refer to PCN13170.
(See Rev. 1 data sheet for MRF377HR5.)
• Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 7
• Added Revision History, p. 13
MRF377HR3
RF Device Data
Freescale Semiconductor
13
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MRF377HR3
Document Number: MRF377H
Rev. 2, 3/2009
14
RF Device Data
Freescale Semiconductor