Freescale Semiconductor Technical Data Document Number: AFT18H356--24S Rev. 1, 3/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz. 1800 MHz Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 1805 MHz 15.1 47.3 7.6 –33.2 –13 1840 MHz 15.5 47.4 7.5 –35.5 –13 1880 MHz 15.0 46.7 7.3 –38.5 –12 AFT18H356--24SR6 1805–1995 MHz, 63 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR 1900 MHz Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 950 mA, VGSB = 1.3 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 1930 MHz 15.3 48.4 7.6 –30.3 –18 1960 MHz 15.5 48.1 7.5 –30.6 –16 1995 MHz 15.4 47.8 7.4 –31.2 –12 Features Advanced High Performance In--Package Doherty Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. NI--1230S--4L2L 6 VBWA(1) Carrier RFinA/VGSA 1 5 RFoutA/VDSA RFinB/VGSB 2 4 RFoutB/VDSB Peaking 3 VBWB(1) (Top View) Figure 1. Pin Connections 1. Device cannot operate with the VDD current supplied through pin 3 and pin 6. Freescale Semiconductor, Inc., 2013, 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT18H356--24SR6 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C CW 289 1.9 W W/C CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 63 W CW, 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, 1880 MHz Symbol Value (2,3) Unit RJC 0.47 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 146 Adc) VGS(th) 1.6 2.1 2.6 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 1100 mAdc, Measured in Functional Test) VGSA(Q) 2.4 2.9 3.4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.1 0.2 0.3 Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 291 Adc) VGS(th) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics -- Side A (4) On Characteristics -- Side B (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) AFT18H356--24SR6 2 RF Device Data Freescale Semiconductor, Inc. Table 4 . Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1,2) Functional Tests (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 V, Pout = 63 W Avg., f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 14.5 15.0 17.0 dB Drain Efficiency D 45.0 46.7 — % PAR 6.8 7.3 — dB ACPR — –38.5 –26.0 dBc IRL — –12 –8 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 1100 mA, VGSB = 1.45 Vdc, f = 1840 MHz, 1--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. PAR = 9.9 dB @ 0.01% Probability on CCDF. VSWR 10:1 at 31 Vdc, 148 W W--CDMA Output Power (3 dB Input Overdrive from P1dB with W--CDMA Test Signal) No Device Degradation Typical Performance (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, 1805–1880 MHz Bandwidth P1dB — 400 (3,4) — W (5) P3dB — 480 — W AM/PM (Maximum value measured at the P3dB compression point across the 1805–1880 MHz bandwidth) — –24 — VBWres — 80 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 63 W Avg. GF — 0.48 — dB Gain Variation over Temperature (–30C to +85C) G — 0.02 — dB/C P1dB — 0.026 — dB/C Pout @ 1 dB Compression Point, CW Pout @ 3 dB Compression Point VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (–30C to +85C) (4) 1. 2. 3. 4. 5. Part internally matched both on input and output. Measurements made with device in an asymmetrical Doherty configuration. Calculated from load pull P3dB measurements. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 3 C15 VGGA C17 C4 R1 C11 C13 C10 C C2 R3 Z1 C19 C3 C20 P CUT OUT AREA C6 C1 VDDA C8 C25 C26 VGGB C21 C24 C27 C7 C5 C22 C23 R2 C12 C9 C14 C16 VDDB C18 D50288 AFT18H356--24S Rev. 0 Figure 2. AFT18H356--24SR6 Production Test Circuit Component Layout — 1805–1880 MHz Table 5. AFT18H356--24SR6 Production Test Circuit Component Designations and Values — 1805–1880 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C5, C8, C9, C10, C23, C24 18 F Chip Capacitors GQM2195C2E180FB12D Murata C6, C19, C22, C25 1.2 F Chip Capacitors GQM2195C2E1R2BB12D Murata C7, C20 1.5 pF Chip Capacitors GQM2195C2E1R5BB12D Murata C11, C12 4.7 F Chip Capacitors GRM32ER71H475KA88B Murata C13, C14, C17, C18 22 F Chip Capacitors C5750Y5V1H226ZT TDK C15, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp C21 0.6 pF Chip Capacitor ATC600F0R6BT250XT ATC C26, C27 2.4 pF Chip Capacitors GQM2195C2E2R4BB12D Murata R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 , 10 W Terminator Resistor 81A7031-50-5F Florida Labs Z1 1900 MHz Band, 5 dB Directional Coupler XC1900A--05S Anaren PCB Rogers RO4350B, 0.020, r = 3.66 D50288 MTL AFT18H356--24SR6 4 RF Device Data Freescale Semiconductor, Inc. VGGA C3 C5 R1 D50791 C13 VDDA C15 C9 C17 C11 C7 C1 CUT OUT AREA C P R3 C8 C19 C2 C12 C18 R2 C6 C4 AFT18H356--24S Rev. 1 C16 C10 VDDB C14 VGGB Figure 3. AFT18H356--24SR6 Characterization Test Circuit Component Layout — 1805–1880 MHz Table 6. AFT18H356--24SR6 Characterization Test Circuit Component Designations and Values — 1805–1880 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C9, C10 18 pF Chip Capacitors GQM2195C2E180FB12D Murata C5, C6 2.2 F Chip Capacitors C1206C225K4RAC Kemet C7 24 pF Chip Capacitor ATC100B240JT500XT ATC C8 10 pF Chip Capacitor ATC100B100JT500XT ATC C11, C12 2.2 F Chip Capacitors C1825C225J5RAC Kemet C13, C14 22 F Chip Capacitors C5750Y5V1H226ZT TDK C15, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C17, C18 10 F Chip Capacitors C5750X7S2A106M230KB TDK C19 0.4 pF Chip Capacitor ATC600F0R4BT250XT ATC R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 , 10 W Terminator Resistor 81A7031--50--5F Florida Labs PCB Rogers RO4350B, 0.020, r = 3.66 D50791 MTL AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 5 48 D 16 46 Gps 15 13 12 44 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 14 --30 --9 --32 --10 --34 PARC --36 11 10 ACPR IRL 9 1760 1780 1800 1820 1840 1860 1880 --38 --11 --12 --13 --40 1920 1900 --14 --2 --2.2 --2.4 --2.6 --2.8 PARC (dB) 50 IRL, INPUT RETURN LOSS (dB) 17 Gps, POWER GAIN (dB) 52 VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 1100 mA VGSB = 1.45 Vdc, Single--Carrier W--CDMA 18 ACPR (dBc) 19 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 1805–1880 MHz --3 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. --10 VDD = 28 Vdc, Pout = 70 W (PEP), IDQA = 1100 mA VGSB = 1.45 Vdc, Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 1840 MHz IM3--L --30 IM3--U --40 IM5--U IM5--L --50 --60 IM7--L IM7--U 1 10 100 TWO--TONE SPACING (MHz) 17 0 16 15 14 13 12 D ACPR --1 --1 dB = 30 W --2 --5 10 30 50 50 --25 30 --3 dB = 79 W 20 VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc f = 1840 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF --4 --20 40 Gps --2 dB = 58 W --3 60 70 PARC 90 110 --30 --35 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 18 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing --40 10 --45 0 --50 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT18H356--24SR6 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 1805–1880 MHz D 1880 MHz 1805 MHz 16 1840 MHz 1805 MHz 15 1880 MHz 1880 MHz Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 1 50 --10 40 20 1805 MHz 1840 MHz 12 0 ACPR 30 14 13 60 10 10 0 300 100 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc Single--Carrier W--CDMA, 3.84 MHz 17 Channel Bandwidth Gps 1840 MHz D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 17 GAIN (dB) 15 5 Gain 0 14 --5 13 --10 IRL 12 11 1600 1650 1700 1750 1800 1850 1900 IRL (dB) 16 10 VDD = 28 Vdc Pin = 0 dBm IDQA = 1100 mA VGSB = 1.45 Vdc --15 1950 --20 2000 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 7 Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQA = 777 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.20 -- j4.69 1.31 + j4.72 1840 1.35 -- j4.79 1.46 + j4.96 1880 1.61 -- j4.95 1.77 + j5.18 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.12 -- j4.80 16.2 51.5 142 56.2 --10 1.10 -- j4.89 16.1 51.5 140 55.5 --9 1.10 -- j4.93 16.4 51.4 139 55.4 --9 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.20 -- j4.69 1.20 + j4.92 1.07 -- j4.99 13.9 52.3 169 57.2 --15 1840 1.35 -- j4.79 1.36 + j5.19 1.08 -- j5.07 13.9 52.2 166 56.6 --15 1880 1.61 -- j4.95 1.69 + j5.47 1.10 -- j5.15 14.1 52.1 163 55.9 --15 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 777 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.59 -- 3.98 19.1 49.6 90 68.3 --16 1.41 + j5.01 2.49 -- j4.11 19.0 49.5 90 66.8 --14 1.69 + j5.21 2.30 -- j4.09 19.1 49.5 89 65.1 --14 f (MHz) Zsource () Zin () 1805 1.20 -- j4.69 1.25 + j4.80 1840 1.35 -- j4.79 1880 1.61 -- j4.95 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1805 1.20 -- j4.69 1.15 + j4.94 1840 1.35 -- j4.79 1.33 + j5.19 1880 1.61 -- j4.95 1.63 + j5.45 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 2.51 -- j4.15 17.0 50.3 108 68.2 --23 2.45 -- j4.29 16.8 50.3 107 66.1 --21 2.22 -- j4.17 17.0 50.2 104 64.0 --21 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H356--24SR6 8 RF Device Data Freescale Semiconductor, Inc. Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1805 1.07 -- j4.05 0.98 + j4.30 1840 1.23 -- j4.30 1.24 + j4.67 1880 1.45 -- j4.70 1.76 + j5.14 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.38 -- j4.37 14.0 54.6 291 58.2 --27 1.40 -- j4.58 13.8 54.7 293 57.4 --26 1.44 -- j4.72 13.8 54.6 288 56.5 --28 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1805 1.07 -- j4.05 0.951 + j4.39 1.98 -- j3.71 13.2 54.4 277 68.0 --37 1840 1.23 -- j4.30 1.25 + j4.81 1.83 -- j4.08 12.7 54.9 307 65.6 --37 1880 1.45 -- j4.70 1.88 + j5.34 2.11 -- j4.65 12.1 55.0 316 59.5 --28 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.37 -- j1.94 15.4 51.6 145 73.1 --36 1.08 + j4.59 2.18 -- j2.05 15.4 51.6 144 73.1 --36 1.55 + j5.03 2.14 -- j2.33 15.3 51.8 150 72.0 --36 f (MHz) Zsource () Zin () 1805 1.07 -- j4.05 0.853 + j4.24 1840 1.23 -- j4.30 1880 1.45 -- j4.70 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1805 1.07 -- j4.05 0.92 + j4.37 1840 1.23 -- j4.30 1.19 + j4.76 1880 1.45 -- j4.70 1.81 + j5.26 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 2.53 -- j2.47 13.4 52.9 193 73.1 --43 2.34 -- j2.65 13.4 53.0 200 73.2 --43 2.89 -- j3.68 12.9 54.0 249 74.2 --37 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 9 P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz --3 --3 48.5 47.5 --3.5 --3.5 66 IMAGINARY () 48.5 --4 IMAGINARY () 48 E --4.5 49.5 50 51 P --5 49 50.5 --5.5 --4 E 62 P --5 60 --5.5 50 --6 1.5 1 2 2.5 REAL () 3 3.5 --6 4 --3 --3 --3.5 --3.5 E IMAGINARY () IMAGINARY () 20 --4 19.5 --4.5 19 P 16.5 --5.5 18 17 1 2.5 REAL () --22 3 3.5 4 --20 --18 --16 --4 E --14 --4.5 --12 P --5 --10 18.5 --8 17.5 1.5 2 --5.5 16 --6 1.5 1 58 56 54 52 Figure 10. P1dB Load Pull Efficiency Contours (%) Figure 9. P1dB Load Pull Output Power Contours (dBm) --5 64 --4.5 2 2.5 REAL () 3 3.5 4 Figure 11. P1dB Load Pull Gain Contours (dB) NOTE: --6 0.5 1 1.5 REAL () 2 2.5 3 Figure 12. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 10 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz --3 --3 48.5 --3.5 50.5 --4 50 51 E --4.5 52 --5 49 49.5 IMAGINARY () IMAGINARY () --3.5 51.5 P --5.5 --6 --4 E 66 --4.5 64 --5 P 62 --5.5 1.5 1 2 2.5 REAL () 3 3.5 --6 4 50 52 1.5 1 2.5 REAL () 3 3.5 4 --3 --3 --3.5 --3.5 --26 --24 18 --4 17.5 E --4.5 IMAGINARY () IMAGINARY () 2 56 Figure 14. P3dB Load Pull Efficiency Contours (%) Figure 13. P3dB Load Pull Output Power Contours (dBm) 17 --5 P 14.5 15 --5.5 15.5 --4 --22 --4.5 --18 --5 P 16.5 16 1 1.5 E --20 --16 --5.5 14 --6 60 58 56 54 2 --6 2.5 REAL () 3 3.5 4 Figure 15. P3dB Load Pull Gain Contours (dB) NOTE: --14 --12 1 1.5 2 2.5 REAL () 3 3.5 4 Figure 16. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 11 P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz 0 0 50.5 51 --2 52.5 --3 53.5 --4 P 52 53 54 54.5 70 72 51.5 E 62 --1 IMAGINARY () IMAGINARY () --1 64 60 --2 68 E 66 64 --3 --4 62 60 P --5 --5 --6 --6 58 1.5 1 2 2.5 3 3.5 REAL () 4 5 4.5 0 2 2.5 3 3.5 REAL () 4 4.5 5 0 14 --2 E 15 15.5 --3 --4 12.5 12 1 --2 2 2.5 3 3.5 REAL () --34 --36 --32 E --30 --3 --28 --4 --26 P --5 14 13.5 13 1.5 --40 14.5 P --5 --38 --1 IMAGINARY () --1 IMAGINARY () 1.5 Figure 18. P1dB Load Pull Efficiency Contours (%) Figure 17. P1dB Load Pull Output Power Contours (dBm) --6 1 --24 4 4.5 5 Figure 19. P1dB Load Pull Gain Contours (dB) NOTE: --6 1 1.5 2 2.5 3 3.5 REAL () 4 4.5 5 Figure 20. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 12 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1840 MHz --1 --1 51.5 --1.5 --2 52.5 --2.5 E IMAGINARY () IMAGINARY () --2 53 --3 53.5 --3.5 54 --4 P 1.5 2 2.5 3 3.5 REAL () 4 5 4.5 --1 68 P 1 1.5 2 IMAGINARY () E --3.5 13 --4 P --4.5 --48 1 12.5 1.5 2.5 3 3.5 REAL () 4 4.5 5 --44 E --40 --38 --3 --36 --34 --3.5 --32 P --4.5 12 2 3 3.5 REAL () --42 --2.5 --4 12 11.5 2.5 --46 --2 13.5 62 60 --1.5 --3 64 66 --1 --2 --2.5 70 Figure 22. P3dB Load Pull Efficiency Contours (%) 12 --1.5 IMAGINARY () 72 --3.5 --5 Figure 21. P3dB Load Pull Output Power Contours (dBm) --5 E --3 --4.5 55 1 --2.5 --4 54.5 --4.5 --5 --1.5 52 4 5 4.5 Figure 23. P3dB Load Pull Gain Contours (dB) NOTE: --5 1 1.5 2 2.5 3 3.5 REAL () 4 4.5 5 Figure 24. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 13 ALTERNATE CHARACTERIZATION — 1930–1995 MHz C13 VGGA C18 C5 C15 R1 C C1 C2 R3 AFT18H356--24S Rev. 2 C9 P CUT OUT AREA C3 VDDA D53347 C7 C11 C8 C12 C10 C4 R2 C6 VGGB VDDB C17 C14 C16 Figure 25. AFT18H356--24SR6 Test Circuit Component Layout — 1930–1995 MHz Table 11. AFT18H356--24SR6 Test Circuit Component Designations and Values — 1930–1995 MHz Part Description Part Number Manufacturer C1, C2, C3, C4, C7, C9, C10 18 pF Chip Capacitors GQM2195C2E180FB12D Murata C5, C6 2.2 F Chip Capacitors C1206C225K4RAC Kemet C8 12 pF Chip Capacitor ATC100B120JT500XT ATC C11, C12 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC C13, C14 10 F Chip Capacitors C5750X7S2A106M230KB TDK C15, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C17, C18 10 F Chip Capacitors GRM32ER61H106KA12L Murata R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay R3 50 Ω, 10 W Chip Resistor 81A7031--50--5F Florida RF Labs PCB Rogers RO4350B, 0.020, r = 3.66 D53347 MTL AFT18H356--24SR6 14 RF Device Data Freescale Semiconductor, Inc. 17 16 15 14 --28 13 PARC --29 12 --30 11 --31 10 1880 ACPR IRL 1900 1920 1940 1960 1980 2000 --9 --32 2040 2020 --11 --13 --15 --17 --19 --2 --2.4 --2.8 --3.2 --3.6 PARC (dB) Gps, POWER GAIN (dB) 18 IRL, INPUT RETURN LOSS (dB) 52 VDD = 28 Vdc, Pout = 63 W (Avg.), IDQA = 950 mA 50 VGSB = 1.3 Vdc, Single--Carrier W--CDMA D 48 3.84 MHz Channel Bandwidth 46 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 44 Gps --27 19 ACPR (dBc) 20 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 1930–1995 MHz --4 f, FREQUENCY (MHz) Figure 26. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. 16 D 1960 MHz 1960 MHz 1930 MHz 12 --10 50 --20 40 30 1995 MHz 14 60 Gps 1930 MHz 20 10 --30 --40 --50 ACPR (dBc) 1960 MHz VDD = 28 Vdc, IDQA = 950 mA 1995 MHz 1930 MHz VGSB = 1.3 Vdc, Single--Carrier 20 W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB 18 @ 0.01%= Probability on CCDF ACPR D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 --60 1995 MHz 0 300 10 1 10 100 --70 Pout, OUTPUT POWER (WATTS) AVG. Figure 27. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 16 30 Gain VDD = 28 Vdc Pin = 0 dBm IDQA = 950 mA VGSB = 1.3 Vdc 14 GAIN (dB) 20 13 10 0 IRL (dB) 15 --10 12 IRL 11 10 1810 --20 1850 1890 1930 1970 2010 2050 2090 --30 2130 f, FREQUENCY (MHz) Figure 28. Broadband Frequency Response AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 15 Table 12. Carrier Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQA = 775 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1930 1.98 -- j5.37 2.22 + j5.56 1960 2.08 -- j5.43 2.59 + j5.75 1995 2.42 -- j5.68 3.14 + j5.82 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.13 -- j5.10 16.4 51.2 132 53.7 --10 1.11 -- j5.19 16.2 51.1 129 52.4 --10 1.10 -- j5.38 16.2 50.9 124 50.1 --10 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1930 1.98 -- j5.37 2.20 + j5.93 1.10 -- j5.31 14.1 51.9 155 53.4 --16 1960 2.08 -- j5.43 2.64 + j6.19 1.10 -- j5.49 13.8 51.8 151 51.2 --15 1995 2.42 -- j5.68 3.29 + j6.34 1.07 -- j5.53 13.9 51.6 146 49.9 --15 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 13. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, IDQA = 775 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 2.20 -- j4.31 19.0 49.4 87 61.8 --13 2.43 + j5.74 2.15 -- j4.14 19.1 48.9 78 59.9 --14 2.94 + j5.79 2.15 -- j4.62 18.9 49.1 81 57.3 --11 f (MHz) Zsource () Zin () 1930 1.98 -- j5.37 2.13 + j5.54 1960 2.08 -- j5.43 1995 2.42 -- j5.68 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1930 1.98 -- j5.37 2.14 + j5.88 1960 2.08 -- j5.43 2.51 + j6.12 1995 2.42 -- j5.68 3.21 + j6.20 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 2.08 -- j4.39 16.8 50.2 105 61.2 --19 1.91 -- j4.22 16.8 49.9 98 59.4 --21 2.11 -- j4.65 16.8 50.0 99 57.1 --17 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H356--24SR6 16 RF Device Data Freescale Semiconductor, Inc. Table 14. Peaking Side Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource () Zin () 1930 2.34 -- j5.33 3.02 + j6.08 1960 3.57 -- j5.40 4.37 + j6.41 1995 4.83 -- j4.85 6.83 + j5.71 Zload () (1) Gain (dB) (dBm) (W) D (%) AM/PM () 1.58 -- j4.91 13.9 54.5 285 56.8 --28 1.79 -- j5.19 13.8 54.5 281 55.9 --27 1.98 -- j5.45 13.8 54.4 276 55.5 --26 Max Output Power P3dB f (MHz) Zsource () Zin () Zload (2) () Gain (dB) (dBm) (W) D (%) AM/PM () 1930 2.34 -- j5.33 3.31 + j6.32 1.96 -- j5.00 12.1 55.2 330 60.6 --35 1960 3.57 -- j5.40 4.91 + j6.61 1.98 -- j5.29 11.9 55.2 331 58.7 --34 1995 4.83 -- j4.85 7.71 + j5.38 2.23 -- j5.91 11.5 55.2 331 55.3 --31 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 15. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD = 28 Vdc, VGSB = 1.4 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB Gain (dB) (dBm) (W) D (%) AM/PM () 1.99 -- j2.55 15.2 51.8 151 71.0 --35 3.82 + j6.34 1.88 -- j2.67 15.1 51.7 147 70.1 --35 6.03 + j5.96 2.00 -- j2.88 15.0 51.8 152 69.7 --33 f (MHz) Zsource () Zin () 1930 2.34 -- j5.33 2.65 + j5.93 1960 3.57 -- j5.40 1995 4.83 -- j4.85 Zload () (1) Max Drain Efficiency P3dB f (MHz) Zsource () Zin () 1930 2.34 -- j5.33 3.03 + j6.23 1960 3.57 -- j5.40 4.45 + j6.62 1995 4.83 -- j4.85 7.11 + j5.78 Zload () (2) Gain (dB) (dBm) (W) D (%) AM/PM () 1.97 -- j3.02 13.3 53.0 200 70.7 --44 1.85 -- j3.07 13.2 52.8 189 69.6 --44 1.94 -- j3.28 13.1 52.9 196 69.7 --42 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 17 P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz --3 --3 --3.5 --3.5 46 50 48 47 E IMAGINARY () IMAGINARY () --4 47.5 48 --4.5 50 49.5 --5 P --5.5 --6 48.5 E --4.5 58 --5 P 50.5 51 56 --5.5 1.5 1 49 --4 2 2.5 REAL () 3 3.5 --6 4 46 48 50 1.5 1 54 52 2 2.5 REAL () 3 --3 --3 --3.5 --3.5 --26 --22 --24 --18 --20 IMAGINARY () IMAGINARY () 20 E 19.5 --4.5 19 --5 --5.5 16 --6 1 17 16.5 1.5 17.5 2 E --4.5 --12 --5 P --10 --5.5 18 2.5 REAL () --16 --14 --4 18.5 P 4 Figure 30. P1dB Load Pull Efficiency Contours (%) Figure 29. P1dB Load Pull Output Power Contours (dBm) --4 3.5 --10 3 3.5 4 Figure 31. P1dB Load Pull Gain Contours (dB) NOTE: --6 0.5 1 1.5 REAL () 2 2.5 3 Figure 32. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 18 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1960 MHz --3 --3 --3.5 --3.5 --4 E --4.5 IMAGINARY () IMAGINARY () --4 48 --5 --5.5 51 P 50.5 50 49.5 49 48.5 51.5 --6 52 50 P 48 --6 --7 --7 1.5 2 2.5 3 3.5 REAL () 4 5 4.5 46 44 1.5 1 2 2.5 3 3.5 REAL () 4 4.5 5 Figure 34. P3dB Load Pull Efficiency Contours (%) Figure 33. P3dB Load Pull Output Power Contours (dBm) --3 --3 --3.5 --26 --30 --28 --24 --3.5 E --22 17.5 --4.5 IMAGINARY () --4 IMAGINARY () 54 --5.5 --6.5 17 --5 16.5 --5.5 P 16 15.5 --6 14.5 13.5 --6.5 --7 56 58 --5 --6.5 1 E --4.5 15 1.5 --20 E --4.5 --18 --5 --16 --5.5 P --14 14 1 --4 2 2.5 3 3.5 REAL () 4 5 4.5 Figure 35. P3dB Load Pull Gain Contours (dB) NOTE: --6 0.5 1 1.5 REAL () 2 2.5 3 Figure 36. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 19 P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz --1 50.5 52.5 --4 54 --5 53 53.5 P --6 53 53.5 1 68 66 --4 64 --1 13.5 2 2.5 3 3.5 REAL () 4 --5 P 56 1.5 2 --1 --38 --36 --2 IMAGINARY () E 15 --4 14.5 P 14 13.5 --6 11.5 12 1 1.5 2 3 3.5 REAL () 4 4.5 5 --34 --32 E --3 --30 --28 --26 --4 --24 --5 P --6 13 12.5 --7 2.5 Figure 38. P1dB Load Pull Efficiency Contours (%) --2 --5 58 54 1 5 4.5 14 --3 60 62 --7 1.5 Figure 37. P1dB Load Pull Output Power Contours (dBm) IMAGINARY () E --3 --6 --7 54 --2 52 E --3 56 51.5 IMAGINARY () IMAGINARY () --2 --1 51 --22 --7 2.5 3 3.5 REAL () 4 4.5 5 Figure 39. P1dB Load Pull Gain Contours (dB) NOTE: 1 1.5 2 2.5 3 REAL () 3.5 4 4.5 5 Figure 40. P1dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 20 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 1960 MHz --1 --1 51 51.5 52 --2 56 54 --2 --3 IMAGINARY () IMAGINARY () 52.5 53 E 53.5 54 --4 54.5 --5 --6 1.5 2 11 11.5 3 3.5 --6 4 P 54 1 1.5 2 60 58 56 2.5 REAL () 3 IMAGINARY () --3 E 13 --4 --5 1 11.5 1.5 4 --44 --42 --3 --30 --38 --46 --40 --36 E --34 --4 12.5 --6 3.5 --1 12 --2 11 64 Figure 42. P3dB Load Pull Efficiency Contours (%) --2 IMAGINARY () 66 --4 55 2.5 REAL () 68 62 Figure 41. P3dB Load Pull Output Power Contours (dBm) --1 E --5 P 1 --3 P 2 --32 --5 12 2.5 REAL () 3 3.5 4 Figure 43. P3dB Load Pull Gain Contours (dB) NOTE: --6 P 1 1.5 2 --30 2.5 REAL () 3 3.5 4 Figure 44. P3dB Load Pull AM/PM Contours () P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 21 PACKAGE DIMENSIONS AFT18H356--24SR6 22 RF Device Data Freescale Semiconductor, Inc. AFT18H356--24SR6 RF Device Data Freescale Semiconductor, Inc. 23 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. 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U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2013, 2015 Freescale Semiconductor, Inc. AFT18H356--24SR6 Document Number: RF Device DataAFT18H356--24S Rev. 1, 3/2015Semiconductor, Inc. Freescale 25