Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.0 42.8 8.0 --31.0 1920 MHz 16.0 43.7 8.1 --32.6 2025 MHz 15.9 42.0 8.1 --31.2 Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) Typical Pout @ 3 dB Compression Point ≃ 170 Watts (1) MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 1880--2025 MHz, 24 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs NI--780H--4L MRF8P20140WHR3 Features Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 240 MHz. Designed for Wideband Applications that Require 160 MHz Signal Bandwidth Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for Guaranteed Output Power Capability Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems NI--780H--4L in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel. NI--780S--4L, NI--780GS--4L in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel. NI--780S--4L MRF8P20140WHSR3 NI--780GS--4L MRF8P20140WGHSR3 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections 1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. Freescale Semiconductor, Inc., 2011, 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature TC 125 C Operating Junction Temperature (1,2) TJ 225 C CW 140 0.66 W W/C CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Value (2,3) Symbol Thermal Resistance, Junction to Case Case Temperature 80C, 24 W CW, 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz Case Temperature 96C, 130 W CW (3), 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz RJC 0.68 0.40 Unit C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 5 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 1.1 1.8 2.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDA = 500 mAdc) VGSA(Q) — 2.6 — Vdc Fixture Gate Quiescent Voltage (6) (VDD = 28 Vdc, IDA = 500 mAdc, Measured in Functional Test) VGGA(Q) 4.5 5.2 6.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics (4,5) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 5. Each side of device measured separately. 6. VDDA and VDDB must be tied together and powered by a single DC power supply. 7. VGG = 2.0 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued) MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit Functional Tests (1,2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 15.0 16.0 18.0 dB Drain Efficiency D 37.5 41.2 — % PAR 7.3 7.7 — dB ACPR — --31.9 --29.5 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Frequency (3) Typical Performance over — (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.0 42.8 8.0 --31.0 1920 MHz 16.0 43.7 8.1 --32.6 2025 MHz 15.9 42.0 8.1 --31.2 Typical Performances (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1880--2025 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 140 — W (5) P3dB — 170 — W IMD Symmetry @ 24 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 133 — VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 240 — MHz Gain Flatness in 145 MHz Bandwidth @ Pout = 24 W Avg. GF — 0.25 — dB Gain Variation over Temperature (--30C to +85C) G — 0.013 — dB/C P1dB — 0.003 — dB/C Pout @ 3 dB Compression Point Output Power Variation over Temperature (--30C to +85C) (6) MHz 1. 2. 3. 4. VDDA and VDDB must be tied together and powered by a single DC power supply. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GHS) parts. 5. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. 3 R2 VGGA R3 C15 C14 C6 C7 R6 C1 C12* C23 C26 Z1 C3* C5 C10 C11 MRF8P20140W Rev. 1.2 C CUT OUT AREA C2* R1 C19 C16 C4 C9 VDDA C18 C17 P C21 C13* R7 C22 C8 C20 R5 C25 R4 C24 VGGB VDDB Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically. Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply. Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 0.6 pF Chip Capacitor ATC600F0R6BT250XT ATC C2, C3 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC C4, C8, C18, C24 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C5 1.2 pF Chip Capacitor ATC600F1R2BT250XT ATC C6, C10, C12, C13, C14, C20 12 pF Chip Capacitors ATC600F120JT250XT ATC C7, C11 10 F, 32 V Chip Capacitors GRM32ER61H106KA12L Murata C9, C17 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC C15, C21 6.8 F, 50 V Chip Capacitors C4532X7R1H685KT TDK C16, C22 2.2 F, 100 V Chip Capacitors C3225X7R2A225KT TDK C19, C25 220 F, 100 V Chip Capacitors EEV--FK2A221M Panasonic--ECG C23 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC C26 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC R1 50 , Chip Resistor ATCCW12010T0050GBK ATC R2, R3, R4, R5 1.5 k, 1/4 W Chip Resistors CRCW12061K50FKEA Vishay R6, R7 2.2 , 1/4 W Chip Resistors CRCW12062R2FNEA Vishay Z1 1700--2000 MHz Band 90, 3 dB Hybrid Coupler 1P503S Anaren PCB 0.020, r = 3.5 R04350B Rogers MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 4 RF Device Data Freescale Semiconductor, Inc. Single--ended 4 Quadrature combined 4 4 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. 5 40 VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, 30 MHz Carrier Spacing, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 16.4 16.2 16 15.8 38 36 Gps PARC 15.6 15.2 1900 1920 1940 1960 1980 2000 --25 --31 --1.2 --26 --33 --34 ACPR 15 1880 --1 --32 IM3 15.4 --30 --1.4 --1.6 --1.8 --35 2040 2020 PARC (dB) 16.6 Gps, POWER GAIN (dB) 42 D --27 --28 --29 --30 --2 IM3, THIRD ORDER INTERMODULATION (dBc) 44 16.8 ACPR (dBc) 17 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Gps, POWER GAIN (dB) 16.6 VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 16.4 16.2 16 42 D 41 40 39 Gps 15.8 ACPR --30 --1.6 --31 --1.7 15.6 --32 15.4 --33 PARC --34 15.2 15 1880 1900 1920 1940 1960 1980 2000 2020 --1.8 --1.9 --2 --35 2040 PARC (dB) 43 ACPR (dBc) 17 16.8 D, DRAIN EFFICIENCY (%) Figure 4. 2--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 24 Watts Avg. --2.1 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 24 Watts Avg. --20 VDD = 28 Vdc, Pout = 24 W (PEP) IDQA = 500 mA, VGSB = 1.2 Vdc --30 IM3--L IM5--L --40 IM5--U --50 IM7--U --60 --70 IM3--U IM7--L Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1920 MHz 1 10 100 300 TWO--TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Two--Tone Spacing MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 6 RF Device Data Freescale Semiconductor, Inc. 16 0 15.5 15 14.5 14 13.5 VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f = 1920 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 60 --22 50 --24 D --1 40 Gps --2 30 --1 dB = 14.5 W --3 ACPR 20 --2 dB = 25 W --3 dB = 35 W --4 --5 PARC Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 20 30 40 --26 --28 ACPR (dBc) 1 D DRAIN EFFICIENCY (%) 16.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS --30 10 --32 0 --34 60 0 50 --10 60 50 Pout, OUTPUT POWER (WATTS) Figure 7. Output Peak--to--Average Ratio Compression (PARC) versus Output Power Gps, POWER GAIN (dB) 18 Gps 1880 MHz 1920 MHz 2025 MHz 2025 MHz 16 D 1880 MHz 14 ACPR 1920 MHz 1880 MHz 2025 MHz 1920 MHz 12 10 1 10 30 20 10 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 8 40 100 0 200 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQA = 500 mA VGSB = 1.2 Vdc, Single--Carrier W--CDMA D, DRAIN EFFICIENCY (%) 20 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power Gps, POWER GAIN (dB) 18 Gps 16 --10 18 --20 15 --30 12 IM5--L 14 IM3--U --40 IM5--U IM3--L IM7--U 12 --50 IM7--L 10 --60 Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 8 1 10 100 --70 200 GAIN (dB) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f1 = 1880 MHz f2 = 1910 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth IM3, IM5, IM7 (dBc) 20 9 VDD = 28 Vdc Pin = 0 dBm IDQA = 500 mA VGSB = 1.2 Vdc 6 3 0 1650 1725 1800 1875 1950 2025 2100 2175 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 9. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7 versus Output Power Figure 10. Broadband Frequency Response 2250 MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. 7 W--CDMA TEST SIGNAL --20 100 --40 --50 1 --60 Input Signal (dB) PROBABILITY (%) 10 0.1 --70 --80 0.01 --90 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --30 0 2 4 6 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --100 --110 8 10 --120 --75 12 --60 --45 PEAK--TO--AVERAGE (dB) 0 15 30 45 60 75 Figure 12. 2--Carrier W--CDMA Spectrum 100 10 0 10 --10 3.84 MHz Channel BW --20 1 Input Signal --30 0.1 (dB) PROBABILITY (%) --15 f, FREQUENCY (MHz) Figure 11. CCDF W--CDMA IQ Magnitude Clipping, 2--Carrier Test Signal 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 0.0001 --30 +IM3 in 3.84 MHz BW 0 2 4 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 8 10 12 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 14. Single--Carrier W--CDMA Spectrum MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 8 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Output Power P1dB P3dB f (MHz) Zsource () Zload (1) () (dBm) (W) D (%) (dBm) (W) D (%) 1880 5.35 -- j5.03 2.36 -- j4.84 49.7 93 53.7 50.5 113 56.2 1930 7.39 -- j5.10 2.57 -- j4.73 50.0 100 56.9 50.8 119 59.3 1990 9.46 -- j1.71 2.48 -- j5.11 50.0 100 56.4 50.7 118 58.6 2025 9.30 + j0.80 2.50 -- j5.30 50.0 100 56.7 50.7 118 59.1 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 15. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle Max Drain Efficiency P1dB P3dB f (MHz) Zsource () Zload (1) () (dBm) (W) D (%) (dBm) (W) D (%) 1880 5.35 -- j5.03 6.91 -- j4.37 47.6 57 64.6 48.2 67 65.2 1930 7.39 -- j5.10 6.36 -- j3.60 48.0 63 67.3 48.6 72 68.3 1990 9.46 -- j1.71 5.61 -- j3.11 48.0 63 67.2 48.6 72 67.8 2025 9.30 + j0.80 5.28 -- j2.88 47.9 61 66.5 48.5 70 67.3 (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 16. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 10 RF Device Data Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. 11 MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 12 RF Device Data Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. 13 MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 14 RF Device Data Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, Software and Tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2011 Initial Release of Data Sheet 1 Nov. 2013 Added part number MRF8P20140WGHSR3 (NI--780GS--4L), p. 1 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Added NI--780GS--4L package isometric, p. 1, and Mechanical Outline, pp. 14--15 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 16 MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 16 RF Device Data Freescale Semiconductor, Inc. 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All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013 Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 Document Number: RF Device DataMRF8P20140WH Rev. 1, 11/2013Semiconductor, Inc. Freescale 17