Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P20140WH
Rev. 1, 11/2013
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 500 mA, VGSB = 1.2 Vdc, Pout = 24 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.0
42.8
8.0
--31.0
1920 MHz
16.0
43.7
8.1
--32.6
2025 MHz
15.9
42.0
8.1
--31.2
 Capable of Handling 10:1 VSWR, @ 30 Vdc, 1920 MHz, 160 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
 Typical Pout @ 3 dB Compression Point ≃ 170 Watts (1)
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WGHSR3
1880--2025 MHz, 24 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
NI--780H--4L
MRF8P20140WHR3
Features
 Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃
240 MHz.
 Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
 Production Tested in a Symmetrical Doherty Configuration
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 NI--780H--4L in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13--inch Reel.
 NI--780S--4L, NI--780GS--4L in Tape and Reel. R3 Suffix = 250 Units, 32 mm
Tape Width, 13--inch Reel.
NI--780S--4L
MRF8P20140WHSR3
NI--780GS--4L
MRF8P20140WGHSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
 Freescale Semiconductor, Inc., 2011, 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature
TC
125
C
Operating Junction Temperature (1,2)
TJ
225
C
CW
140
0.66
W
W/C
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Value (2,3)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80C, 24 W CW, 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz
Case Temperature 96C, 130 W CW (3), 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, 1920 MHz
RJC
0.68
0.40
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
1.1
1.8
2.6
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDA = 500 mAdc)
VGSA(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage (6)
(VDD = 28 Vdc, IDA = 500 mAdc, Measured in Functional Test)
VGGA(Q)
4.5
5.2
6.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics (4)
On Characteristics (4,5)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
5. Each side of device measured separately.
6. VDDA and VDDB must be tied together and powered by a single DC power supply.
7. VGG = 2.0 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Functional Tests (1,2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc,
Pout = 24 W Avg., f1 = 1880 MHz, f2 = 1910 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
15.0
16.0
18.0
dB
Drain Efficiency
D
37.5
41.2
—
%
PAR
7.3
7.7
—
dB
ACPR
—
--31.9
--29.5
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Frequency (3)
Typical Performance over
— (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2
Vdc, Pout = 24 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.0
42.8
8.0
--31.0
1920 MHz
16.0
43.7
8.1
--32.6
2025 MHz
15.9
42.0
8.1
--31.2
Typical Performances (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc,
1880--2025 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
140
—
W
(5)
P3dB
—
170
—
W
IMD Symmetry @ 24 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
133
—
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
240
—
MHz
Gain Flatness in 145 MHz Bandwidth @ Pout = 24 W Avg.
GF
—
0.25
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.013
—
dB/C
P1dB
—
0.003
—
dB/C
Pout @ 3 dB Compression Point
Output Power Variation over Temperature
(--30C to +85C) (6)
MHz
1.
2.
3.
4.
VDDA and VDDB must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GHS) parts.
5. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
3
R2
VGGA
R3
C15
C14
C6 C7
R6
C1
C12*
C23
C26
Z1
C3*
C5
C10 C11
MRF8P20140W
Rev. 1.2
C
CUT OUT AREA
C2*
R1
C19
C16
C4
C9
VDDA
C18
C17
P
C21
C13*
R7
C22
C8
C20
R5
C25
R4
C24
VGGB
VDDB
Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically.
Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout
Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
0.6 pF Chip Capacitor
ATC600F0R6BT250XT
ATC
C2, C3
8.2 pF Chip Capacitors
ATC600F8R2BT250XT
ATC
C4, C8, C18, C24
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C5
1.2 pF Chip Capacitor
ATC600F1R2BT250XT
ATC
C6, C10, C12, C13, C14,
C20
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C7, C11
10 F, 32 V Chip Capacitors
GRM32ER61H106KA12L
Murata
C9, C17
0.1 pF Chip Capacitors
ATC600F0R1BT250XT
ATC
C15, C21
6.8 F, 50 V Chip Capacitors
C4532X7R1H685KT
TDK
C16, C22
2.2 F, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C19, C25
220 F, 100 V Chip Capacitors
EEV--FK2A221M
Panasonic--ECG
C23
0.2 pF Chip Capacitor
ATC600F0R2BT250XT
ATC
C26
1.5 pF Chip Capacitor
ATC600F1R5BT250XT
ATC
R1
50 , Chip Resistor
ATCCW12010T0050GBK
ATC
R2, R3, R4, R5
1.5 k, 1/4 W Chip Resistors
CRCW12061K50FKEA
Vishay
R6, R7
2.2 , 1/4 W Chip Resistors
CRCW12062R2FNEA
Vishay
Z1
1700--2000 MHz Band 90, 3 dB Hybrid Coupler
1P503S
Anaren
PCB
0.020, r = 3.5
R04350B
Rogers
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
4
RF Device Data
Freescale Semiconductor, Inc.
Single--ended

4

Quadrature combined
4

4


2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
5
40
VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA
VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, 30 MHz Carrier Spacing, Input Signal
PAR = 9.8 dB @ 0.01% Probability on CCDF
16.4
16.2
16
15.8
38
36
Gps
PARC
15.6
15.2
1900
1920
1940
1960
1980
2000
--25
--31
--1.2
--26
--33
--34
ACPR
15
1880
--1
--32
IM3
15.4
--30
--1.4
--1.6
--1.8
--35
2040
2020
PARC (dB)
16.6
Gps, POWER GAIN (dB)
42
D
--27
--28
--29
--30
--2
IM3, THIRD ORDER
INTERMODULATION (dBc)
44
16.8
ACPR (dBc)
17
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
16.6
VDD = 28 Vdc, Pout = 24 W (Avg.), IDQA = 500 mA
VGSB = 1.2 Vdc, 2--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
16.4
16.2
16
42
D
41
40
39
Gps
15.8
ACPR
--30
--1.6
--31
--1.7
15.6
--32
15.4
--33
PARC
--34
15.2
15
1880
1900
1920
1940
1960
1980
2000
2020
--1.8
--1.9
--2
--35
2040
PARC (dB)
43
ACPR (dBc)
17
16.8
D, DRAIN
EFFICIENCY (%)
Figure 4. 2--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 24 Watts Avg.
--2.1
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 24 Watts Avg.
--20
VDD = 28 Vdc, Pout = 24 W (PEP)
IDQA = 500 mA, VGSB = 1.2 Vdc
--30
IM3--L
IM5--L
--40
IM5--U
--50
IM7--U
--60
--70
IM3--U
IM7--L
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1920 MHz
1
10
100
300
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
6
RF Device Data
Freescale Semiconductor, Inc.
16
0
15.5
15
14.5
14
13.5
VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f = 1920 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
60
--22
50
--24
D
--1
40
Gps
--2
30
--1 dB = 14.5 W
--3
ACPR
20
--2 dB = 25 W
--3 dB = 35 W
--4
--5
PARC
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
10
20
30
40
--26
--28
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
16.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
--30
10
--32
0
--34
60
0
50
--10
60
50
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Gps, POWER GAIN (dB)
18
Gps
1880 MHz
1920 MHz
2025 MHz
2025 MHz
16
D
1880 MHz
14
ACPR
1920 MHz
1880 MHz
2025 MHz 1920 MHz
12
10
1
10
30
20
10
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
8
40
100
0
200
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQA = 500 mA
VGSB = 1.2 Vdc, Single--Carrier W--CDMA
D, DRAIN EFFICIENCY (%)
20
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
Gps, POWER GAIN (dB)
18
Gps
16
--10
18
--20
15
--30
12
IM5--L
14
IM3--U
--40
IM5--U
IM3--L
IM7--U
12
--50
IM7--L
10
--60
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
8
1
10
100
--70
200
GAIN (dB)
VDD = 28 Vdc, IDQA = 500 mA, VGSB = 1.2 Vdc, f1 = 1880 MHz
f2 = 1910 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
IM3, IM5, IM7 (dBc)
20
9
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 500 mA
VGSB = 1.2 Vdc
6
3
0
1650
1725
1800
1875
1950
2025
2100
2175
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 9. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7
versus Output Power
Figure 10. Broadband Frequency Response
2250
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
7
W--CDMA TEST SIGNAL
--20
100
--40
--50
1
--60
Input Signal
(dB)
PROBABILITY (%)
10
0.1
--70
--80
0.01
--90
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--30
0
2
4
6
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--100
--110
8
10
--120
--75
12
--60
--45
PEAK--TO--AVERAGE (dB)
0
15
30
45
60
75
Figure 12. 2--Carrier W--CDMA Spectrum
100
10
0
10
--10
3.84 MHz
Channel BW
--20
1
Input Signal
--30
0.1
(dB)
PROBABILITY (%)
--15
f, FREQUENCY (MHz)
Figure 11. CCDF W--CDMA IQ Magnitude
Clipping, 2--Carrier Test Signal
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
--30
+IM3 in
3.84 MHz BW
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
8
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
()
Zload (1)
()
(dBm)
(W)
D (%)
(dBm)
(W)
D (%)
1880
5.35 -- j5.03
2.36 -- j4.84
49.7
93
53.7
50.5
113
56.2
1930
7.39 -- j5.10
2.57 -- j4.73
50.0
100
56.9
50.8
119
59.3
1990
9.46 -- j1.71
2.48 -- j5.11
50.0
100
56.4
50.7
118
58.6
2025
9.30 + j0.80
2.50 -- j5.30
50.0
100
56.7
50.7
118
59.1
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 15. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
()
Zload (1)
()
(dBm)
(W)
D (%)
(dBm)
(W)
D (%)
1880
5.35 -- j5.03
6.91 -- j4.37
47.6
57
64.6
48.2
67
65.2
1930
7.39 -- j5.10
6.36 -- j3.60
48.0
63
67.3
48.6
72
68.3
1990
9.46 -- j1.71
5.61 -- j3.11
48.0
63
67.2
48.6
72
67.8
2025
9.30 + j0.80
5.28 -- j2.88
47.9
61
66.5
48.5
70
67.3
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 16. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
12
RF Device Data
Freescale Semiconductor, Inc.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
13
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
14
RF Device Data
Freescale Semiconductor, Inc.
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and Tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2011
 Initial Release of Data Sheet
1
Nov. 2013
 Added part number MRF8P20140WGHSR3 (NI--780GS--4L), p. 1
 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
 Added NI--780GS--4L package isometric, p. 1, and Mechanical Outline, pp. 14--15
 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 16
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
16
RF Device Data
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