Data Sheet

Document Number: MRF8S18260H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF8S18260HR6
MRF8S18260HSR6
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ =
1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
17.9
31.6
6.0
--35.0
1840 MHz
17.9
31.9
6.0
--36.0
1880 MHz
17.9
32.5
5.9
--36.0
1805--1880 MHz, 74 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
CASE 375I--04
NI--1230--8
MRF8S18260HR6
CASE 375J--03
NI--1230S--8
MRF8S18260HSR6
Table 1. Maximum Ratings
N.C. 1
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW
420
3.5
W
W/°C
CW Operation @ TC = 25°C
Derate above 25°C
8 VBW
RFin/VGS 2
7 RFout/VDS
RFin/VGS 3
6 RFout/VDS
5 VBW
N.C. 4
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 74 W CW, 30 Vdc, IDQ = 1600 mA, 1805 MHz
Case Temperature 88°C, 260 W CW(4), 30 Vdc, IDQ = 1600 mA, 1805 MHz
Symbol
RθJC
Value (2,3)
0.27
0.26
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.1
1.9
2.6
Vdc
Gate Quiescent Voltage
(VDS = 30 Vdc, ID = 1600 mA)
VGS(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 30 Vdc, ID = 1600 mA, Measured in Functional Test)
VGG(Q)
4.3
5.1
5.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics
(1)
On Characteristics (1)
Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., f = 1805 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Gps
16.8
17.9
19.0
dB
ηD
29.0
31.6
—
%
PAR
5.4
6.0
—
dB
ACPR
—
--35.0
--32.0
dBc
IRL
—
--19
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth
@ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
17.9
31.6
6.0
--35.0
--19
1840 MHz
17.9
31.9
6.0
--36.0
--18
1880 MHz
17.9
32.5
5.9
--36.0
--8
1. Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally.
2. Part internally matched both on input and output.
(continued)
MRF8S18260HR6 MRF8S18260HSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1600 mA, 1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
260
—
—
21
—
W
IMD Symmetry @ 100 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
64
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 74 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.011
—
dB/°C
∆P1dB
—
0.01
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) (1)
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
C24
C11
C9
C7
C20
R6
C26
R2
R4
C18
C3
R1
C2
CUT OUT AREA
C5
C1
C6
C4
C16
C13
C15
C14
C17
MRF8S18260H/HS
Rev. 2
C19
R3
R5
C22
C27
C21 C23
R7
C10
C12
C8
C25
Figure 2. MRF8S18260HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8S18260HR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
2.2 pF Chip Capacitor
ATC600F2R2BT250XT
ATC
C2, C7, C8, C14, C20, C21
15 pF Chip Capacitors
ATC600F150JT250XT
ATC
C3, C4, C5, C6 C16, C17,
C18, C19
1.0 pF Chip Capacitors
ATC600F1R0BT250XT
ATC
C9, C10, C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C11, C12
47 μF, 35 V Electrolytic Capacitors
476KXM050M
Illinois Capacitor
C13
0.6 pF Chip Capacitor
ATC600F0R6BT250XT
ATC
C15
0.4 pF Chip Capacitor
ATC600F0R4BT250XT
ATC
C24, C25
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C26, C27
6.8 μF Chip Capacitors
C4532X7RIH685K
TDK
R1
2 kΩ, 1/4 W Chip Resistor
CRCW12062k00FKEA
Vishay
R2, R3
4.75 Ω, 1/4 W Chip Resistors
CRCW12064R75FKEA
Vishay
R4, R5, R6, R7
1 kΩ, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8S18260HR6 MRF8S18260HSR6
4
RF Device Data
Freescale Semiconductor, Inc.
33
32
18
31
Gps
17.8
PARC
17.6
17.4
1800
1820
--5
--37
ACPR
1780
--34
--36
17
16.8
1760
--0
--35
IRL
17.2
--33
1840
1860
1880
1900
--10
--15
--20
--25
--38
1920
--1.2
--1.4
--1.6
--1.8
--2
PARC (dB)
18.2
34
IRL, INPUT RETURN LOSS (dB)
18.4
Gps, POWER GAIN (dB)
35
VDD = 30 Vdc, Pout = 74 W (Avg.), IDQ = 1600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
ηD
0.01% Probability on CCDF
18.6
ACPR (dBc)
18.8
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 74 Watts Avg.
--10
VDD = 30 Vdc, Pout = 100 W (PEP), IDQ = 1600 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
--20
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
IM7--L
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
18.4
0
18.2
18
17.8
17.6
17.4
Gps
VDD = 30 Vdc, IDQ = 1600 mA, f = 1840 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
30
50
--25
70
90
30
20
ηD
--4
--5
--3 dB = 115 W
--2 dB = 85 W
--3
50
40
--1 dB = 60 W
--2
--20
ACPR
PARC
--1
60
110
--30
--35
--40
10
--45
0
--50
130
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
18.6
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
18
Gps
1880 MHz
60
0
50
--10
ηD
VDD = 30 Vdc, IDQ = 1600 mA, Single--Carrier
17 W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
40
16
30
1880 MHz
1840 MHz
15
ACPR
1805 MHz
1880 MHz
14
10
1840 MHz
1805 MHz
13
1
20
10
0
300
100
--20
--30
--40
ACPR (dBc)
1840 MHz
1805 MHz
ηD, DRAIN EFFICIENCY (%)
19
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
24
5
Gain
16
0
12
--5
IRL (dB)
GAIN (dB)
20
IRL
--10
8
VDD = 30 Vdc
Pin = 0 dBm
IDQ = 1600 mA
4
0
1400
1500
1600
1700
--15
1800
1900
2000
2100
--20
2200
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8S18260HR6 MRF8S18260HSR6
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1760
2.81 -- j3.85
0.90 -- j1.84
1780
2.58 -- j3.93
0.90 -- j1.75
1800
2.33 -- j3.97
0.90 -- j1.67
1820
2.08 -- j3.95
0.90 -- j1.58
1840
1.85 -- j3.91
0.90 -- j1.50
1860
1.63 -- j3.83
0.91 -- j1.41
1880
1.43 -- j3.73
0.91 -- j1.34
1900
1.25 -- j3.61
0.92 -- j1.26
1920
1.09 -- j3.48
0.93 -- j1.18
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60
VDD = 30 Vdc, IDQ = 1600 mA, Pulsed CW, 10 μsec(on) 10% Duty Cycle
Ideal
Pout, OUTPUT POWER (dBm)
59
58
57
1805 MHz
56
55
Actual
54
1880 MHz
53
1845 MHz
52
1845 MHz
51
1880 MHz
50
49
30
31
32
33
34
36
35
38
37
39
40
41
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
1805
302
54.8
363
55.6
1845
324
55.1
389
55.9
1880
302
54.8
389
55.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
1805
P1dB
1.14 -- j3.12
0.75 -- j0.93
1845
P1dB
1.61 -- j3.61
0.58 -- j0.10
1880
P1dB
2.93 -- j3.80
0.51 -- j1.14
Figure 11. Pulsed CW Output Power
versus Input Power @ 30 V
MRF8S18260HR6 MRF8S18260HSR6
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S18260HR6 MRF8S18260HSR6
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8S18260HR6 MRF8S18260HSR6
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2010
• Initial Release of Data Sheet
1
Feb. 2012
• Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
• Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed
dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 0.89--1.02 to 0.89--1.14,
changed dimension W3 in mm from 12.47--12.72 to 12.47--12.73.
• Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed
dimension A in mm from 32.13--32.38 to 32.13--32.39, changed dimension F in mm from 0.1--0.18 to
0.10--0.18, changed dimension U in mm from 8.89--11.43 to 0.89--1.14.
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
13
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MRF8S18260HR6 MRF8S18260HSR6
Document Number: MRF8S18260H
Rev. 1, 2/2012
14
RF Device Data
Freescale Semiconductor, Inc.