Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 2, 3/2011 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., f = 1807.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW Output Power • Pout @ 1 dB Compression Point ≃ 170 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 17. 1805--1880 MHz, 50 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--03, STYLE 1 NI--880 MRF7S18170HR3 CASE 465C--02, STYLE 1 NI--880S MRF7S18170HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 84°C, 170 W CW Case Temperature 79°C, 50 W CW RθJC 0.27 0.30 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2006, 2008, 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF7S18170HR3 MRF7S18170HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) IA (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 372 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGG(Q) 4 5.4 7.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.72 Adc) VDS(on) 0.1 0.15 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.87 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 703 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 1807.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 16 17.5 19 dB Drain Efficiency ηD 29 31 — % 5.8 5.7 6.2 6.2 — — ACPR — --37 --35 dBc IRL — --15 --9 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF MRF7S18170HR3 MRF7S18170HSR3 Adjacent Channel Power Ratio Input Return Loss PAR dB 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S18170HR3 MRF7S18170HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1805--1880 MHz Bandwidth Video Bandwidth @ 170 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both sidebands) VBW MHz — 25 — Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg. GF — 0.4 — dB Average Deviation from Linear Phase in 75 MHz Bandwidth @ Pout = 170 W CW Φ — 2.5 — ° Delay — 4.2 — ns Part--to--Part Insertion Phase Variation @ Pout = 170 W CW, f = 1840 MHz, Six Sigma Window ∆Φ — 15 — ° Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.015 — dB/°C ∆P1dB — 0.01 — dB/°C Average Group Delay @ Pout = 170 W CW, f = 1840 MHz Output Power Variation over Temperature (--30°C to +85°C) MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 3 Z16 R3 VBIAS VSUPPLY + R2 RF INPUT C4 C3 C2 Z5 C10 Z2 Z3 Z4 C19 Z8 Z6 C1 C18 C20 C11 C12 C13 Z7 R1 Z1 C17 Z9 Z10 DUT Z11 Z12 C9 C14 Z13 Z14 RF OUTPUT Z15 C15 C8 Z17 C5 Z1 Z2* Z3* Z4 Z5 Z6 Z7 Z8 Z9 0.410″ x 0.083″ Microstrip 0.480″ x 0.083″ Microstrip 0.710″ x 0.083″ Microstrip 0.180″ x 0.147″ Microstrip 0.850″ x 0.091″ Microstrip 0.383″ x 1.109″ Microstrip 0.120″ x 1.360″ Microstrip 0.480″ x 1.360″ Microstrip 0.060″ x 1.098″ Microstrip Z10* Z11* Z12 Z13 Z14* Z15* Z16, Z17 PCB C16 C6 C7 0.900″ x 0.161″ Microstrip 0.140″ x 0.161″ Microstrip 0.094″ x 0.220″ Microstrip 0.070″ x 0.220″ Microstrip 0.140″ x 0.083″ Microstrip 0.160″ x 0.083″ Microstrip 1.120″ x 0.080″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55 * Variable for tuning Figure 1. MRF7S18170HR3 Test Circuit Schematic — NI--880 Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values — NI--880 Part Description Part Number Manufacturer C1 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C2, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C3 100 pF Chip Capacitor ATC100B101JT500XT ATC C4 100 nF Chip Capacitor ATC100B104JT500XT ATC C5, C10 5.6 pF Chip Capacitors ATC100B5R6BT500XT ATC C6, C7, C11, C12 10 μF Chip Capacitors C5750X5R1H106MT TDK C13 470 μF, 63 V Electrolytic Capacitor, Radial 477KXM063M Illinois Capacitor C14 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C15, C20 0.2 pF Chip Capacitors ATC100B0R2BT500XT ATC C16, C17 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C18 2 pF Chip Capacitor ATC100B2R0BT500XT ATC C19 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay R2, R3 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay MRF7S18170HR3 MRF7S18170HSR3 4 RF Device Data Freescale Semiconductor R2 R3 C13 C4 C3 C2 C17 C10 C11 C12 R1 C9 C18 CUT OUT AREA C1 C19 C20 C8 C14 C5 C16 C6 C15 C7 MRF7S18170H Rev. 4 Figure 2. MRF7S18170HR3 Test Circuit Component Layout — NI--880 MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 5 Z16 R3 VBIAS VSUPPLY + R2 RF INPUT C4 C3 C2 Z5 C10 Z2 Z3 Z4 C19 Z8 Z6 C1 C18 C20 C11 C12 C13 Z7 R1 Z1 C17 Z9 Z10 DUT Z11 Z12 C9 C14 Z13 Z14 RF OUTPUT Z15 C15 C8 Z17 C5 Z1* Z2* Z3* Z4 Z5 Z6 Z7 Z8 Z9 0.500″ x 0.083″ Microstrip 0.290″ x 0.083″ Microstrip 0.810″ x 0.083″ Microstrip 0.180″ x 0.147″ Microstrip 0.850″ x 0.091″ Microstrip 0.383″ x 1.109″ Microstrip 0.117″ x 1.360″ Microstrip 0.480″ x 1.360″ Microstrip 0.060″ x 1.098″ Microstrip Z10* Z11* Z12 Z13 Z14* Z15* Z16, Z17 PCB C16 C6 C7 0.900″ x 0.161″ Microstrip 0.140″ x 0.161″ Microstrip 0.094″ x 0.220″ Microstrip 0.070″ x 0.220″ Microstrip 0.140″ x 0.083″ Microstrip 0.160″ x 0.083″ Microstrip 1.120″ x 0.080″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55 * Variable for tuning Figure 3. MRF7S18170HSR3 Test Circuit Schematic — NI--880S Table 6. MRF7S18170HSR3 Test Circuit Component Designations and Values — NI--880S Part Description Part Number Manufacturer C1 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C2, C8, C9 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C3 100 pF Chip Capacitor ATC100B101JT500XT ATC C4 100 nF Chip Capacitor ATC100B104JT500XT ATC C5, C10 5.6 pF Chip Capacitors ATC100B5R6BT500XT ATC C6, C7, C11, C12 10 μF Chip Capacitors C5750X5R1H106MT TDK C13 470 μF, 63 V Electrolytic Capacitor, Radial 477KXM063M Illinois Capacitor C14 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C15 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C16, C17 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C18 2 pF Chip Capacitor ATC100B2R0BT500XT ATC C19 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C20 0.1 pF Chip Capacitor ATC100B0R2BT500XT ATC R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay R2, R3 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay MRF7S18170HR3 MRF7S18170HSR3 6 RF Device Data Freescale Semiconductor R2 R3 C13 C4 C3 C2 C17 C10 C11 C12 R1 C9 C18 C19 C20 CUT OUT AREA C1 C8 C14 C5 C16 C6 C15 C7 MRF7S18170H Rev. 4 Figure 4. MRF7S18170HSR3 Test Circuit Component Layout — NI--880S MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 34 ηD 16 32 15 30 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) 14 13 PARC 12 11 10 1760 28 --5 --1 --8 --1.7 --2.4 IRL 1780 1800 1820 1840 1860 1920 1880 1900 --3.1 1940 --11 --14 --17 IRL, INPUT RETURN LOSS (dB) Gps 17 ηD, DRAIN EFFICIENCY (%) 36 PARC (dB) 18 f, FREQUENCY (MHz) Figure 5. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. 42 40 ηD 3.84 MHz Channel Bandwidth PAR = 7.5 dB @ 0.01% Probability (CCDF) 14 13 12 11 10 1760 PARC 38 --5 --2.7 --8 --3.4 --4.1 IRL 1780 1800 1820 1840 1860 1920 1880 1900 --4.8 1940 --11 --14 --17 IRL, INPUT RETURN LOSS (dB) 15 44 VDD = 28 Vdc, Pout = 80 W (Avg.) IDQ = 1400 mA, Single--Carrier W--CDMA 16 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17 46 Gps PARC (dB) 18 f, FREQUENCY (MHz) Figure 6. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 80 Watts Avg. 19 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 1750 mA 18 Gps, POWER GAIN (dB) --10 IDQ = 2100 mA 1400 mA 17 1050 mA 16 700 mA 15 VDD = 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz Two--Tone Measurements, 10 MHz Tone Spacing 14 1 10 100 400 --20 IDQ = 700 mA --30 1050 mA 2100 mA --40 1750 mA --50 --60 1400 mA 1 VDD = 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz Two--Tone Measurements, 10 MHz Tone Spacing 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Two--Tone Power Gain versus Output Power Figure 8. Third Order Intermodulation Distortion versus Output Power MRF7S18170HR3 MRF7S18170HSR3 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ = 1400 mA f1 = 1835 MHz, f2 = 1845 MHz Two--Tone Measurements, 10 MHz Tone Spacing --20 --30 --40 3rd Order --50 5th Order 7th Order --60 1 10 400 100 0 VDD = 28 Vdc, Pout = 170 W (PEP) IDQ = 1400 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz --10 --20 IM3--U --30 IM3--L --40 --50 --60 IM5--U IM5--L IM7--L IM7--U 10 1 100 Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Output Power Figure 10. Intermodulation Distortion Products versus Tone Spacing OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 1 50 Ideal 0 45 --1 --2 40 --1 dB = 47.811 W 35 --2 dB = 64.519 W --3 --4 --5 30 --3 dB = 84.995 W Actual 25 VDD = 28 Vdc, IDQ = 1400 mA f = 1840 MHz, Input PAR = 7.5 dB 45 30 60 90 75 105 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) --10 20 120 Pout, OUTPUT POWER (WATTS) --30 19 VDD = 28 Vdc, IDQ = 1400 mA, f = 1840 MHz Single--Carrier W--CDMA, PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth --40 Uncorrected, Upper and Lower --50 --60 --70 40 DPD Corrected, No Memory Correction DPD Corrected, with Memory Correction Gps 18 TC = --30_C 25_C 40 17 85_C 16 30 15 20 14 VDD = 28 Vdc IDQ = 1400 mA f = 1840 MHz ηD 13 41 42 43 44 45 46 47 48 49 50 60 --30_C 25_C 85_C 50 1 10 100 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW Figure 12. Digital Predistortion Correction versus ACPR and Output Power Figure 13. Power Gain and Drain Efficiency versus CW Output Power 10 ηD, DRAIN EFFICIENCY (%) --20 Gps, POWER GAIN (dB) ACPR, UPPER AND LOWER RESULTS (dBc) Figure 11. Output Peak--to--Average Ratio Compression (PARC) versus Output Power 0 400 MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 9 TYPICAL CHARACTERISTICS 18 Gps, POWER GAIN (dB) IDQ = 1400 mA f = 1840 MHz 17 16 15 VDD = 24 V 28 V 32 V 14 0 100 200 300 Pout, OUTPUT POWER (WATTS) CW Figure 14. Power Gain versus Output Power W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 15. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 16. Single--Carrier W--CDMA Spectrum MRF7S18170HR3 MRF7S18170HSR3 10 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1920 MHz Zload f = 1760 MHz f = 1760 MHz Zsource f = 1920 MHz VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg. f MHz Zsource Ω Zload Ω 1760 1.93 -- j6.00 1.13 -- j2.65 1780 1.95 -- j6.10 1.05 -- j2.45 1800 1.99 -- j6.18 0.97 -- j2.29 1820 1.95 -- j6.22 0.90 -- j2.12 1840 1.85 -- j6.30 0.85 -- j2.00 1860 1.71 -- j6.26 0.81 -- j1.84 1880 1.55 -- j6.25 0.75 -- j1.70 1900 1.39 -- j6.20 0.70 -- j1.54 1920 1.23 -- j6.15 0.67 -- j1.38 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 11 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 60 61 P6dB = 54.1 dBm (257 W) 59 58 P3dB = 53.8 dBm (240 W) 57 56 P1dB = 52.8 dBm (190 W) 55 54 Actual 53 VDD = 28 Vdc, IDQ = 1400 mA Pulsed CW, 12 μsec(on), 10% Duty Cycle, f = 1840 MHz 52 51 50 32 33 34 35 36 37 38 39 41 40 42 43 59 P3dB = 54.65 dBm (290 W) 58 57 P1dB = 54.05 dBm (254.1 W) 56 55 Actual 54 VDD = 32 Vdc, IDQ = 1400 mA Pulsed CW, 12 μsec(on), 10% Duty Cycle, f = 1840 MHz 53 52 44 51 32 33 34 Pin, INPUT POWER (dBm) 35 36 37 38 39 41 40 42 43 44 Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level 3dB Ideal P6dB = 55 dBm (316.23 W) 60 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Ideal Zsource Ω Zload Ω 1.23 -- j7.91 0.88 -- j2.81 Figure 18. Pulsed CW Output Power versus Input Power Test Impedances per Compression Level P3dB Zsource Ω Zload Ω 1.23 -- j7.91 1.03 -- j2.65 Figure 19. Pulsed CW Output Power versus Input Power MRF7S18170HR3 MRF7S18170HSR3 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 13 MRF7S18170HR3 MRF7S18170HSR3 14 RF Device Data Freescale Semiconductor MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 15 MRF7S18170HR3 MRF7S18170HSR3 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF7S18170H and MRF7S18170HS parts will be available for 2 years after release of MRF7S18170H and MRF7S18170HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF7S18170H and MRF7S18170HS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2006 • Initial Release of Data Sheet 1 Dec. 2008 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Updated Typical Performance table to provide better definition of characterization attributes, p. 3 • Corrected Z7 from 1.110″ to 0.120″ in Z list, Fig. 1, Test Circuit Schematic – NI--880, p. 4 • Updated Part Numbers in Tables 5, 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4, 6 • Corrected Z7 from 1.110″ to 0.117″ in Z list, Fig. 3, Test Circuit Schematic – NI--880S, p. 6 • Adjusted scale for Fig. 10, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 9 • Replaced Fig. 15, MTTF versus Junction Temperature, with updated graph; removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 10 • Updated Fig. 16, CCDF W--CDMA 3GPP, Test Model 1, 64 PDCH, 50% Clipping, Single--Carrier Test Signal, to show input signal only, p. 10 2 Mar. 2011 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2 • Fig. 15, MTTF versus Junction Temperature removed, p. 10. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. • Fig. 16, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 17, Single--Carrier W--CDMA Spectrum updated to show the undistorted input test signal, p. 10 (renumbered as Figs. 15 and 16 respectively after Fig. 15 removed) • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 17 MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008, 2011. All rights reserved. MRF7S18170HR3 MRF7S18170HSR3 Document Number: MRF7S18170H Rev. 2, 3/2011 18 RF Device Data Freescale Semiconductor