Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S18170H
Rev. 2, 3/2011
RF Power Field Effect Transistors
MRF7S18170HR3
MRF7S18170HSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1805 to
1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 50 Watts Avg., f = 1807.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW
Output Power
• Pout @ 1 dB Compression Point ≃ 170 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
1805--1880 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--03, STYLE 1
NI--880
MRF7S18170HR3
CASE 465C--02, STYLE 1
NI--880S
MRF7S18170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 84°C, 170 W CW
Case Temperature 79°C, 50 W CW
RθJC
0.27
0.30
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2006, 2008, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S18170HR3 MRF7S18170HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
IA (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 372 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGG(Q)
4
5.4
7.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.72 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.87
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
703
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 1807.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16
17.5
19
dB
Drain Efficiency
ηD
29
31
—
%
5.8
5.7
6.2
6.2
—
—
ACPR
—
--37
--35
dBc
IRL
—
--15
--9
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
MRF7S18170HR3
MRF7S18170HSR3
Adjacent Channel Power Ratio
Input Return Loss
PAR
dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S18170HR3 MRF7S18170HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1805--1880 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
25
—
Gain Flatness in 75 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.4
—
dB
Average Deviation from Linear Phase in 75 MHz Bandwidth
@ Pout = 170 W CW
Φ
—
2.5
—
°
Delay
—
4.2
—
ns
Part--to--Part Insertion Phase Variation @ Pout = 170 W CW,
f = 1840 MHz, Six Sigma Window
∆Φ
—
15
—
°
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.015
—
dB/°C
∆P1dB
—
0.01
—
dB/°C
Average Group Delay @ Pout = 170 W CW, f = 1840 MHz
Output Power Variation over Temperature
(--30°C to +85°C)
MRF7S18170HR3 MRF7S18170HSR3
RF Device Data
Freescale Semiconductor
3
Z16
R3
VBIAS
VSUPPLY
+
R2
RF
INPUT
C4
C3
C2
Z5
C10
Z2
Z3
Z4
C19
Z8
Z6
C1
C18
C20
C11
C12
C13
Z7
R1
Z1
C17
Z9
Z10
DUT
Z11
Z12
C9
C14
Z13
Z14
RF
OUTPUT
Z15
C15
C8
Z17
C5
Z1
Z2*
Z3*
Z4
Z5
Z6
Z7
Z8
Z9
0.410″ x 0.083″ Microstrip
0.480″ x 0.083″ Microstrip
0.710″ x 0.083″ Microstrip
0.180″ x 0.147″ Microstrip
0.850″ x 0.091″ Microstrip
0.383″ x 1.109″ Microstrip
0.120″ x 1.360″ Microstrip
0.480″ x 1.360″ Microstrip
0.060″ x 1.098″ Microstrip
Z10*
Z11*
Z12
Z13
Z14*
Z15*
Z16, Z17
PCB
C16
C6
C7
0.900″ x 0.161″ Microstrip
0.140″ x 0.161″ Microstrip
0.094″ x 0.220″ Microstrip
0.070″ x 0.220″ Microstrip
0.140″ x 0.083″ Microstrip
0.160″ x 0.083″ Microstrip
1.120″ x 0.080″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 1. MRF7S18170HR3 Test Circuit Schematic — NI--880
Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values — NI--880
Part
Description
Part Number
Manufacturer
C1
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C2, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C3
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C4
100 nF Chip Capacitor
ATC100B104JT500XT
ATC
C5, C10
5.6 pF Chip Capacitors
ATC100B5R6BT500XT
ATC
C6, C7, C11, C12
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C13
470 μF, 63 V Electrolytic Capacitor, Radial
477KXM063M
Illinois Capacitor
C14
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C15, C20
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C16, C17
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C18
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C19
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
R2, R3
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
MRF7S18170HR3 MRF7S18170HSR3
4
RF Device Data
Freescale Semiconductor
R2
R3
C13
C4
C3
C2
C17
C10
C11
C12
R1
C9
C18
CUT OUT AREA
C1
C19
C20
C8
C14
C5
C16
C6
C15
C7
MRF7S18170H
Rev. 4
Figure 2. MRF7S18170HR3 Test Circuit Component Layout — NI--880
MRF7S18170HR3 MRF7S18170HSR3
RF Device Data
Freescale Semiconductor
5
Z16
R3
VBIAS
VSUPPLY
+
R2
RF
INPUT
C4
C3
C2
Z5
C10
Z2
Z3
Z4
C19
Z8
Z6
C1
C18
C20
C11
C12
C13
Z7
R1
Z1
C17
Z9
Z10
DUT
Z11
Z12
C9
C14
Z13
Z14
RF
OUTPUT
Z15
C15
C8
Z17
C5
Z1*
Z2*
Z3*
Z4
Z5
Z6
Z7
Z8
Z9
0.500″ x 0.083″ Microstrip
0.290″ x 0.083″ Microstrip
0.810″ x 0.083″ Microstrip
0.180″ x 0.147″ Microstrip
0.850″ x 0.091″ Microstrip
0.383″ x 1.109″ Microstrip
0.117″ x 1.360″ Microstrip
0.480″ x 1.360″ Microstrip
0.060″ x 1.098″ Microstrip
Z10*
Z11*
Z12
Z13
Z14*
Z15*
Z16, Z17
PCB
C16
C6
C7
0.900″ x 0.161″ Microstrip
0.140″ x 0.161″ Microstrip
0.094″ x 0.220″ Microstrip
0.070″ x 0.220″ Microstrip
0.140″ x 0.083″ Microstrip
0.160″ x 0.083″ Microstrip
1.120″ x 0.080″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 3. MRF7S18170HSR3 Test Circuit Schematic — NI--880S
Table 6. MRF7S18170HSR3 Test Circuit Component Designations and Values — NI--880S
Part
Description
Part Number
Manufacturer
C1
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C2, C8, C9
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C3
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C4
100 nF Chip Capacitor
ATC100B104JT500XT
ATC
C5, C10
5.6 pF Chip Capacitors
ATC100B5R6BT500XT
ATC
C6, C7, C11, C12
10 μF Chip Capacitors
C5750X5R1H106MT
TDK
C13
470 μF, 63 V Electrolytic Capacitor, Radial
477KXM063M
Illinois Capacitor
C14
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C15
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C16, C17
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C18
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C19
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C20
0.1 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
R2, R3
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
MRF7S18170HR3 MRF7S18170HSR3
6
RF Device Data
Freescale Semiconductor
R2
R3
C13
C4
C3
C2
C17
C10
C11
C12
R1
C9
C18
C19
C20
CUT OUT AREA
C1
C8
C14
C5
C16
C6
C15
C7
MRF7S18170H
Rev. 4
Figure 4. MRF7S18170HSR3 Test Circuit Component Layout — NI--880S
MRF7S18170HR3 MRF7S18170HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
34
ηD
16
32
15
30
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
14
13
PARC
12
11
10
1760
28
--5
--1
--8
--1.7
--2.4
IRL
1780
1800
1820
1840 1860
1920
1880 1900
--3.1
1940
--11
--14
--17
IRL, INPUT RETURN LOSS (dB)
Gps
17
ηD, DRAIN
EFFICIENCY (%)
36
PARC (dB)
18
f, FREQUENCY (MHz)
Figure 5. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
42
40
ηD
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
14
13
12
11
10
1760
PARC
38
--5
--2.7
--8
--3.4
--4.1
IRL
1780
1800
1820
1840
1860
1920
1880 1900
--4.8
1940
--11
--14
--17
IRL, INPUT RETURN LOSS (dB)
15
44
VDD = 28 Vdc, Pout = 80 W (Avg.)
IDQ = 1400 mA, Single--Carrier W--CDMA
16
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
17
46
Gps
PARC (dB)
18
f, FREQUENCY (MHz)
Figure 6. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 80 Watts Avg.
19
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
1750 mA
18
Gps, POWER GAIN (dB)
--10
IDQ = 2100 mA
1400 mA
17
1050 mA
16
700 mA
15
VDD = 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
14
1
10
100
400
--20
IDQ = 700 mA
--30
1050 mA
2100 mA
--40
1750 mA
--50
--60
1400 mA
1
VDD = 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two--Tone Power Gain versus
Output Power
Figure 8. Third Order Intermodulation Distortion
versus Output Power
MRF7S18170HR3 MRF7S18170HSR3
8
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 1835 MHz, f2 = 1845 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
--30
--40
3rd Order
--50
5th Order
7th Order
--60
1
10
400
100
0
VDD = 28 Vdc, Pout = 170 W (PEP)
IDQ = 1400 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
--10
--20
IM3--U
--30
IM3--L
--40
--50
--60
IM5--U
IM5--L
IM7--L
IM7--U
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Output Power
Figure 10. Intermodulation Distortion
Products versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
50
Ideal
0
45
--1
--2
40
--1 dB = 47.811 W
35
--2 dB = 64.519 W
--3
--4
--5
30
--3 dB = 84.995 W
Actual
25
VDD = 28 Vdc, IDQ = 1400 mA
f = 1840 MHz, Input PAR = 7.5 dB
45
30
60
90
75
105
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
--10
20
120
Pout, OUTPUT POWER (WATTS)
--30
19
VDD = 28 Vdc, IDQ = 1400 mA, f = 1840 MHz
Single--Carrier W--CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
--40
Uncorrected, Upper and Lower
--50
--60
--70
40
DPD Corrected, No Memory
Correction
DPD Corrected,
with Memory Correction
Gps
18
TC = --30_C
25_C
40
17
85_C
16
30
15
20
14
VDD = 28 Vdc
IDQ = 1400 mA
f = 1840 MHz
ηD
13
41
42
43
44
45
46
47
48
49
50
60
--30_C 25_C
85_C 50
1
10
100
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Digital Predistortion Correction versus
ACPR and Output Power
Figure 13. Power Gain and Drain Efficiency
versus CW Output Power
10
ηD, DRAIN EFFICIENCY (%)
--20
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 11. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
0
400
MRF7S18170HR3 MRF7S18170HSR3
RF Device Data
Freescale Semiconductor
9
TYPICAL CHARACTERISTICS
18
Gps, POWER GAIN (dB)
IDQ = 1400 mA
f = 1840 MHz
17
16
15
VDD = 24 V
28 V
32 V
14
0
100
200
300
Pout, OUTPUT POWER (WATTS) CW
Figure 14. Power Gain versus Output Power
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 15. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 16. Single--Carrier W--CDMA Spectrum
MRF7S18170HR3 MRF7S18170HSR3
10
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 1920 MHz
Zload
f = 1760 MHz
f = 1760 MHz
Zsource
f = 1920 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1760
1.93 -- j6.00
1.13 -- j2.65
1780
1.95 -- j6.10
1.05 -- j2.45
1800
1.99 -- j6.18
0.97 -- j2.29
1820
1.95 -- j6.22
0.90 -- j2.12
1840
1.85 -- j6.30
0.85 -- j2.00
1860
1.71 -- j6.26
0.81 -- j1.84
1880
1.55 -- j6.25
0.75 -- j1.70
1900
1.39 -- j6.20
0.70 -- j1.54
1920
1.23 -- j6.15
0.67 -- j1.38
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF7S18170HR3 MRF7S18170HSR3
RF Device Data
Freescale Semiconductor
11
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60
61
P6dB = 54.1 dBm (257 W)
59
58
P3dB = 53.8 dBm (240 W)
57
56
P1dB = 52.8 dBm (190 W)
55
54
Actual
53
VDD = 28 Vdc, IDQ = 1400 mA
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1840 MHz
52
51
50
32
33
34
35
36
37
38
39
41
40
42
43
59
P3dB = 54.65 dBm (290 W)
58
57
P1dB = 54.05 dBm
(254.1 W)
56
55
Actual
54
VDD = 32 Vdc, IDQ = 1400 mA
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1840 MHz
53
52
44
51
32
33
34
Pin, INPUT POWER (dBm)
35
36
37
38
39
41
40
42
43
44
Pin, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
3dB
Ideal
P6dB = 55 dBm (316.23 W)
60
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Ideal
Zsource
Ω
Zload
Ω
1.23 -- j7.91
0.88 -- j2.81
Figure 18. Pulsed CW Output Power
versus Input Power
Test Impedances per Compression Level
P3dB
Zsource
Ω
Zload
Ω
1.23 -- j7.91
1.03 -- j2.65
Figure 19. Pulsed CW Output Power
versus Input Power
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF7S18170H and MRF7S18170HS parts will be available for 2 years after release of
MRF7S18170H and MRF7S18170HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF7S18170H and MRF7S18170HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2006
• Initial Release of Data Sheet
1
Dec. 2008
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Updated Typical Performance table to provide better definition of characterization attributes, p. 3
• Corrected Z7 from 1.110″ to 0.120″ in Z list, Fig. 1, Test Circuit Schematic – NI--880, p. 4
• Updated Part Numbers in Tables 5, 6, Component Designations and Values, to latest RoHS compliant
part numbers, p. 4, 6
• Corrected Z7 from 1.110″ to 0.117″ in Z list, Fig. 3, Test Circuit Schematic – NI--880S, p. 6
• Adjusted scale for Fig. 10, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 9
• Replaced Fig. 15, MTTF versus Junction Temperature, with updated graph; removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 10
• Updated Fig. 16, CCDF W--CDMA 3GPP, Test Model 1, 64 PDCH, 50% Clipping, Single--Carrier Test
Signal, to show input signal only, p. 10
2
Mar. 2011
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
• Fig. 15, MTTF versus Junction Temperature removed, p. 10. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
• Fig. 16, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 17, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 10 (renumbered as Figs. 15 and
16 respectively after Fig. 15 removed)
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 17
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MRF7S18170HR3 MRF7S18170HSR3
Document Number: MRF7S18170H
Rev. 2, 3/2011
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