Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT21S220W02S
Rev. 0, 2/2014
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2110 to 2170 MHz.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1200 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
18.9
29.8
7.2
–34.0
–18
2140 MHz
19.1
29.3
7.1
–34.0
–25
2170 MHz
19.2
28.9
7.0
–34.0
–17
AFT21S220W02SR3
AFT21S220W02GSR3
2110–2170 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
NI--780S--2L
AFT21S220W02SR3
Features
 Designed for Wide Instantaneous Bandwidth Applications
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
NI--780GS--2L
AFT21S220W02GSR3
1 RFout/VDS
RFin/VGS 2
(Top View)
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +125
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
CW
92
0.41
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.56
C/W
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 91C, 50 W CW, 28 Vdc, IDQ = 1200 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)
VGS(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.0 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Gps
18.1
19.1
21.1
dB
D
26.0
29.3
—
%
PAR
6.6
7.1
—
dB
ACPR
—
–34.0
–32.0
dBc
IRL
—
–25
–12
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT21S220W02SR3 AFT21S220W02GSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1200 mA, f = 2140 MHz, 120 sec Pulse Width, 10% Duty Cycle
VSWR 10:1 at 30 Vdc, 250 W Pulse Output Power
(3 dB Input Overdrive from 180 W Pulse Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, 120 sec Pulse Width, 10% Duty
Cycle
P1dB
—
209
—
W

—
–18
—

VBWres
—
80
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature @ 166 W CW
(–30C to +85C)
G
—
0.02
—
dB/C
P1dB
—
0.01
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature @ 166 W CW
(–30C to +85C) (1)
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C9
C17
VDD
C10
VGG
C7
C11*
C4
C1*
R1
CUT OUT AREA
C3
C2
C5
R2
C6
C16*
C15*
C12*
VGG
C8
C13
C14
C18
AFT21S220W02S
Rev. 2
D57394
*C1, C11, C12, C15 and C16 are mounted vertically.
Figure 2. AFT21S220W02SR3 Test Circuit Component Layout
Table 5. AFT21S220W02SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4, C6, C11, C12, C16
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C2
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C3, C5
0.1 F Chip Capacitors
C1206C104K1RACTU
Kemet
C7, C8, C9, C10, C13, C14
10 F Chip Capacitors
GRM32ER61H106KA12L
Murata
C15
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C17, C18
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
R1, R2
4.75 , 1/4 W Chip Resistors
CRCW12064R75FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D57394
MTL
AFT21S220W02SR3 AFT21S220W02GSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
19.2
Gps 28
19
18.8
PARC
18.6
18.2
2080
--33
--10
--34
--34.5
IRL
18
2060
--5
--33.5
ACPR
18.4
--32.5
2100
2120
2140
2160
2180
--15
--20
--25
--35
2220
2200
--30
--2.4
--2.6
--2.8
--3
PARC (dB)
29
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
19.6
19.4
D, DRAIN
EFFICIENCY (%)
32
VDD = 28 Vdc, Pout = 50 W (Avg.)
IDQ = 1200 mA, Single--Carrier W--CDMA 31
3.84 MHz Channel Bandwidth
30
D
19.8
ACPR (dBc)
20
--3.2
--3.4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
0
VDD = 28 Vdc, Pout = 184 W (PEP)
IDQ = 1200 mA, Two--Tone Measurements
--15 (f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
--30
IM5--U
IM5--L
--45
IM7--L
IM7--U
--60
--75
IM3--L
1
10
100
200 300
TWO--TONE SPACING (MHz)
19.4
0
19.2
19
18.8
18.6
18.4
VDD = 28 Vdc, IDQ = 1200 mA, f = 2140 MHz
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
Gps
--1
--15
40
--20
35
--2 dB = 42 W
--1 dB = 31 W
--2
D
45
30
ACPR
--3
--3 dB = 56 W
--4
--5
PARC
20
30
40
50
60
25
--25
--30
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
19.6
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--35
20
--40
15
--45
70
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
20
18
D
14
2140 MHz
0
50
--10
40
2170 MHz
2140 MHz
2110 MHz
16
60
30
2170 MHz
20
ACPR
12
10
2110 MHz
Gps
0
200 300
10
1
10
100
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1200 mA, Single--Carrier W--CDMA,
3.84 MHz Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
22
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
25
18
Gain
GAIN (dB)
IRL
14
--5
IRL (dB)
5
16
--15
12
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1200 mA
10
8
1800
15
1900
2000
2100
2200
2300
2400
2500
--25
--35
2600
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT21S220W02SR3 AFT21S220W02GSR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 1260 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
3.03 - j5.49
3.14 + j5.71
3.09 - j5.64
18.8
54.2
264
50.3
-12
2140
3.62 - j5.77
4.06 + j5.98
3.37 - j5.73
18.8
54.1
255
49.0
-12
2170
4.75 - j5.91
5.19 + j5.97
3.49 - j5.61
19.0
54.0
253
49.5
-13
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
3.03 - j5.49
3.35 + j5.99
3.70 - j6.29
16.6
55.1
322
51.8
-17
2140
3.62 - j5.77
4.42 + j6.26
3.88 - j6.19
16.6
55.0
314
51.0
-18
2170
4.75 - j5.91
5.69 + j6.11
4.28 - j6.16
16.6
54.9
310
50.7
-18
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 7. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 1260 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
3.03 - j5.49
3.17 + j5.81
2.97 - j3.19
20.7
52.9
196
59.1
-18
2140
3.62 - j5.77
4.19 + j6.13
2.59 - j3.06
20.7
52.6
183
58.3
-21
2170
4.75 - j5.91
5.36 + j5.92
2.76 - j3.04
20.8
52.6
183
58.6
-20
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
3.03 - j5.49
3.32 + j6.09
3.03 - j3.22
18.7
53.7
233
61.4
-27
2140
3.62 - j5.77
4.46 + j6.38
2.64 - j3.06
18.7
53.3
215
60.3
-29
2170
4.75 - j5.91
5.78 + j6.11
2.85 - j3.15
18.7
53.5
222
60.5
-28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
--1
50.5
--2
52
E
--3
IMAGINARY ()
53
--4
53.5
--5
54
P
--6
E
58
56
--4
54
52
--5
50
P
--6
48
46
--7
--7
53.5
--8
--9
50
--2
52.5
--3
IMAGINARY ()
--1
51.5
51
52.5
52
2
53
2.5
3
3.5
4
4.5
5
5.5
--9
6
44
42
--8
2
2.5
3
4
3.5
4.5
5
5.5
6
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
--1
--1
--3
IMAGINARY ()
--2
21
20.5
E
20
--4
19.5
--5
19
P
--6
18.5
--7
--9
--24
17
2
2.5
3
3.5
4
4.5
--18
E
--16
--4
--14
--5
P
--6
--12
--7
18
17.5
--8
--20
--22
--3
IMAGINARY ()
--2
5
5.5
6
--8
--9
2
2.5
3
3.5
4
4.5
5
5.5
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
6
Gain
Drain Efficiency
Linearity
Output Power
AFT21S220W02SR3 AFT21S220W02GSR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
51.5
--2
52.5
53
--3
IMAGINARY ()
--1
52
E
53.5
--4
54.5
--5
P
E
60
--4
58
--8
53.5
53
54
--6
2
2.5
3
3.5
4
4.5
5
5.5
--9
6
P
48
2.5
2
3
46
4
3.5
52
50
44
--8
54
56
--5
--7
--7
--9
52
--3
54
--6
52
--2
IMAGINARY ()
--1
4.5
5
6
5.5
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
--1
--1
--2
--2
19
18.5
E
18
--4
17.5
--5
17
--6
P
16.5
--7
15.5
--8
--9
2.5
3
4
3.5
--32
--26
E
--24
--22
--4
--20
--5
--18
--6
P
--7
16
--16
--8
15
2
--18
--28
--3
IMAGINARY ()
IMAGINARY ()
--3
--30
4.5
5
6
5.5
--9
2
2.5
3
3.5
4
4.5
5
5.5
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
6
Gain
Drain Efficiency
Linearity
Output Power
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT21S220W02SR3 AFT21S220W02GSR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT21S220W02SR3 AFT21S220W02GSR3
12
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Feb. 2014
Description
 Initial Release of Data Sheet
AFT21S220W02SR3 AFT21S220W02GSR3
14
RF Device Data
Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All
other product or service names are the property of their respective owners.
E 2014 Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
Document
Number:
RF Device
DataAFT21S220W02S
Rev.
0, 2/2014Semiconductor, Inc.
Freescale
15