Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT21S140W02S
Rev. 0, 2/2014
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 32 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2110 to 2170 MHz.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 800 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
19.0
33.9
6.7
--32.4
--15
2140 MHz
19.3
33.5
6.7
--32.6
--24
2170 MHz
19.4
33.2
6.7
--32.7
--22
Features
 Designed for Wide Instantaneous Bandwidth Applications
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
AFT21S140W02SR3
AFT21S140W02GSR3
2110–2170 MHz, 32 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
NI--780S--2L
AFT21S140W02SR3
NI--780GS--2L
AFT21S140W02GSR3
1 RFout/VDS
RFin/VGS 2
(Top View)
Figure 1. Pin Connections
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +125
C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
C
CW
124
0.70
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.59
C/W
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 32 W CW, 28 Vdc, IDQ = 800 mA, 2140 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 146 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test)
VGS(Q)
1.5
1.9
2.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.4 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 32 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Gps
18.7
19.3
21.7
dB
D
32.0
33.5
—
%
PAR
6.2
6.7
—
dB
ACPR
—
--32.6
--30.5
dBc
IRL
—
--24
--9
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT21S140W02SR3 AFT21S140W02GSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 800 mA, f = 2140 MHz
VSWR 10:1 at 32 Vdc, 158 W CW(1) Output Power
(3 dB Input Overdrive from 112 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
112
—
W

—
--17
—

VBWres
—
150
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 32 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.03
—
dB/C
P1dB
—
0.01
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C) (1)
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S140W02SR3 AFT21S140W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C10
C7
VGG
C12*
R1
C4*
C16
C3*
C5*
R2
CUT OUT AREA
C2*
C18*
C17
C13*
C8
VGG
C19
C11
C6
C1*
VDD
C15
C9
VDD
C14
C20
AFT21S140W02GS
Rev. 3
D57393
*C1, C2, C3, C4, C5, C12, C13 and C18 are mounted vertically.
Figure 2. AFT21S140W02SR3 Test Circuit Component Layout
Table 5. AFT21S140W02SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C4, C5, C18
6.2 pF Chip Capacitors
ATC100B6R2BT500XT
ATC
C2
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C3
1.1 pF Chip Capacitor
ATC100B1R1BT500XT
ATC
C6, C7, C8, C9, C10, C11,
C14, C15
10 F, Chip Capacitors
GRM32ER61H106KA12L
Murata
C12, C13
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C16
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C17
0.9 pF Chip Capacitor
ATC100B0R9BT500XT
ATC
C19, C20
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
R1, R2
2.37 , 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
PCB
Rogers RO4350B, 0.020, r = 3.66
D57393
MTL
AFT21S140W02SR3 AFT21S140W02GSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
19.2
32
30
Gps
--32
--5
18.8
--32.5
--10
18.6
--33
19
PARC
ACPR
18.4
--33.5
IRL
18.2
18
2060
2080
2100
2120
--34
2140
2160
2180
--15
--20
--25
--34.5
2220
2200
--30
--3.05
--3.1
--3.15
--3.2
PARC (dB)
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
ACPR (dBc)
Gps, POWER GAIN (dB)
19.6
19.4
D, DRAIN
EFFICIENCY (%)
38
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 36
34
D
19.8
IRL, INPUT RETURN LOSS (dB)
20
--3.25
--3.3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 32 Watts Avg.
0
VDD = 28 Vdc, Pout = 96 W (PEP)
IDQ = 800 mA, Two--Tone Measurements
--15 (f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
--30
IM5--U
--45
IM7--L
IM3--L
IM5--L
IM7--U
--60
--75
1
10
300
100
TWO--TONE SPACING (MHz)
19.4
0
19.2
19
18.8
18.6
18.4
VDD = 28 Vdc, IDQ = 800 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
D
--1
--2 dB = 23 W
--1 dB = 16 W
--2
ACPR
--4
--3 dB = 31 W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
--5
8
16
0
50
--10
40
30
Gps
--3
60
24
32
PARC
20
--20
--30
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
19.6
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
10
--50
0
--60
48
40
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFT21S140W02SR3 AFT21S140W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
ACPR
20
15
2110 MHz
2140 MHz
--10
50
--20
40
2170 MHz
2170 MHz
60
30
2140 MHz
2110 MHz
10
20
2170 MHz
5
10
Gps
D
0
1
10
100
0
200
--30
--40
--50
ACPR (dBc)
VDD = 28 Vdc, IDQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
25 Bandwidth, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
30
--60
--70
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
20
10
25
20
0
IRL
15
--10
--20
10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 800 mA
5
0
1800
IRL (dB)
GAIN (dB)
Gain
1920
2040
2160
2280
2400
2520
2640
--30
--40
2760
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT21S140W02SR3 AFT21S140W02GSR3
6
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 770 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
4.72 - j7.83
5.44 + j8.03
3.92 - j6.59
18.9
51.8
152
54.3
-10
2140
6.03 - j8.06
6.63 + j8.08
3.84 - j6.22
19.0
51.9
156
55.5
-11
2170
7.23 - j7.37
7.86 + j7.65
3.89 - j6.16
19.2
52.0
158
56.6
-11
Max Output Power
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload
()
(2)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
4.72 - j7.83
5.92 + j8.68
3.92 - j7.04
16.8
52.8
190
57.5
-16
2140
6.03 - j8.06
7.42 + j8.66
3.99 - j6.82
16.9
52.8
193
58.4
-17
2170
7.23 - j7.37
8.93 + j7.96
3.96 - j6.86
16.9
52.9
193
58.1
-17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 7. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD = 28 Vdc, IDQ = 770 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
4.72 - j7.83
5.45 + j8.49
8.22 - j1.63
21.7
49.5
89
64.0
-18
2140
6.03 - j8.06
6.72 + j8.52
6.98 - j1.62
21.7
49.7
93
64.4
-18
2170
7.23 - j7.37
8.07 + j8.09
5.87 - j1.79
21.7
50.0
99
65.8
-19
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2110
4.72 - j7.83
5.83 + j8.94
6.85 - j4.39
18.9
51.6
143
66.0
-22
2140
6.03 - j8.06
7.35 + j8.95
6.31 - j4.25
18.8
51.7
148
66.5
-23
2170
7.23 - j7.37
9.04 + j8.28
6.47 - j2.38
19.6
50.9
122
67.0
-27
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT21S140W02SR3 AFT21S140W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
0
0
48.5
--1
48
--2
E
--1
49.5
50
--3
50.5
--4
51
--5
51.5
--6
P
--4
--5
--8
--8
--9
--9
4
5
6
7
8
9
62
--6
--7
3
64
--3
--7
2
E
--2
IMAGINARY ()
IMAGINARY ()
49
10
P
60
58
54
48 50 52
3
2
4
56
5
6
7
8
9
10
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
0
0
22
E
--3
21
--4
20.5
--5
20
--6
P
--7
19.5
18.5
--8
3
4
--20
E
--18
--3
--16
--4
--14
--5
--12
--6
P
--7
19
--8
18
2
--22
--2
21.5
IMAGINARY ()
IMAGINARY ()
--2
--9
--24
--1
--1
5
6
7
8
9
10
--9
2
3
4
5
6
7
8
9
REAL ()
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
Figure 11. P1dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
10
Gain
Drain Efficiency
Linearity
Output Power
AFT21S140W02SR3 AFT21S140W02GSR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
0
--1
--1
50
--2
--2
50.5
--3
IMAGINARY ()
IMAGINARY ()
0
49.5
49.5
49
51
--4
E
--5
51.5
52
--6
52.5
P
--7
--3
--4
--5
--9
--9
4
5
6
7
8
9
10
62
P
--7
--8
3
64
--6
--8
2
E
66
50
60
52
2
3
54 56
4
58
5
6
7
8
9
10
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
0
--1
E
18.5
--5
IMAGINARY ()
IMAGINARY ()
--4
18
--6
P
--7
16
2
3
5
--26
--3
--24
--4
E
6
7
8
9
10
--22
--5
--20
--6
--9
--18
P
--8
16.5
4
--28
--7
17.5
17
--8
--30
--2
19
--3
--32
--1
19.5
--2
--9
0
20
--16
2
4
3
5
6
7
8
9
REAL ()
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
10
Gain
Drain Efficiency
Linearity
Output Power
AFT21S140W02SR3 AFT21S140W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT21S140W02SR3 AFT21S140W02GSR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
11
AFT21S140W02SR3 AFT21S140W02GSR3
12
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Feb. 2014
Description
 Initial Release of Data Sheet
AFT21S140W02SR3 AFT21S140W02GSR3
14
RF Device Data
Freescale Semiconductor, Inc.
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AFT21S140W02SR3 AFT21S140W02GSR3
Document
Number:
RF Device
DataAFT21S140W02S
Rev.
0, 2/2014Semiconductor, Inc.
Freescale
15