Data Sheet

Document Number: AFT23S170−13S
Rev. 0, 6/2013
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N−Channel Enhancement−Mode Lateral MOSFET
This 45 watt RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 2300 to 2400 MHz.
AFT23S170−13SR3
• Typical Single−Carrier W−CDMA Performance: VDD = 28 Volts,
IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
2300−2400 MHz, 45 W AVG., 28 V
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz
18.3
33.8
6.9
−34.4
−13
2350 MHz
18.6
33.8
6.9
−34.3
−16
2400 MHz
18.8
33.9
6.8
−33.9
−13
Features
• Greater Negative Gate−Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13−inch Reel.
NI−780S−2L4S
6 VBW (1)
N.C. 1
RFin/VGS 2
5 RFout/VDS
4 VBW (1)
N.C. 3
(Top View)
Figure 1. Pin Connections
1. Device can operate with the VDD current
supplied through pin 4 and pin 6 at a reduced
RF output power level. Refer to CW operation
data in the Maximum Ratings table.
© Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT23S170−13SR3
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5, +65
Vdc
Gate−Source Voltage
VGS
−6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
−65 to +150
°C
Case Operating Temperature Range
TC
−40 to +150
°C
Operating Junction Temperature Range (1,2)
TJ
−40 to +225
°C
CW
94
0.44
W
W/°C
Symbol
Value (2,3)
Unit
RθJC
0.42
°C/W
CW Operation @ TC = 25°C when DC current is fed through pin 4 and pin 6
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78°C, 45 W CW, 28 Vdc, IDQ = 1100 mA, 2350 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22−A114)
2
Machine Model (per EIA/JESD22−A115)
B
Charge Device Model (per JESD22−C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 219 μAdc)
VGS(th)
0.9
1.3
1.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
VGS(Q)
1.4
1.8
2.2
Vdc
Drain−Source On−Voltage
(VGS = 6 Vdc, ID = 2.19 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Off Characteristics
On Characteristics
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 W Avg., f = 2400 MHz,
Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak−to−Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Gps
17.5
18.8
20.0
dB
ηD
32.0
33.9
—
%
PAR
6.3
6.8
—
dB
ACPR
—
−33.9
−32.0
dBc
IRL
—
−13
−9
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes − AN1955.
4. Part internally matched both on input and output.
(continued)
AFT23S170−13SR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1100 mA, f = 2350 MHz
VSWR 10:1 at 32 Vdc, 230 W CW Output Power
(3 dB Input Overdrive from 178 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 2300−2400 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
147
—
W
Φ
—
–14.3
—
°
VBWres
—
95
—
MHz
Gain Flatness in 100 MHz Bandwidth @ Pout = 45 W Avg.
GF
—
0.5
—
dB
Gain Variation over Temperature
(−30°C to +85°C)
ΔG
—
0.015
—
dB/°C
ΔP1dB
—
0.006
—
dB/°C
AM/PM
(Maximum value measured at the P3dB compression point across
the 2300−2400 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(−30°C to +85°C)
AFT23S170−13SR3
RF Device Data
Freescale Semiconductor, Inc.
3
C11
C13 C12
R1
C1
C5*
C3
C2
C14
C17*
C6*
C4*
C7*
C8
C9
CUT OUT AREA
C15
R2
C16
C18*
R3
C22
C20
C19
C21
AFT23S170-13S
Rev 2
C10
*C4, C5, C6, C7, C17 and C18 are mounted vertically.
Figure 2. AFT23S170−13SR3 Test Circuit Component Layout
Table 5. AFT23S170−13SR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C8
2.2 μF, 100 V Chip Capacitors
C3225X7R1H225KT
TDK
C2, C7, C9, C12, C17, C21
4.7 pF Chip Capacitors
ATC100B4R7BT500XT
ATC
C3, C13, C19, C20
1000 nF Chip Capacitors
12065G105AT2A
AVX
C4, C5, C18
0.3 pF Chip Capacitors
ATC100B0R3BT500XT
ATC
C6
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C10, C11
470 μF Electrolytic Capacitors
B41858C8477M000
EPCOS
C14, C22
10 μF, 100 V Chip Capacitors
C5750X7S2A106KT
TDK
C15, C16
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
R1, R2
4.7 Ω, 1/4 W Chip Resistors
WCR1206­4R7FI
Welwyn
R3
0 Ω, 2 A Chip Resistor
WCR1206­R005J
Welwyn
PCB
0.020″, εr = 3.5
RO4350B
Rogers
AFT23S170−13SR3
4
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, Pout = 45 W (Avg.)
IDQ = 1100 mA, Single-Carrier W-CDMA
33.8
Gps, POWER GAIN (dB)
19
33.6
18.8
33.4
Gps
18.6
18.4
33.2
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% -33
Probability on CCDF
-33.5
PARC
18.2
18
-34
ACPR
-34.5
17.8
17.6
-35
IRL
17.4
2290
2305
2320
2335
2350
2365
2380
2395
-7
-9
ACPR (dBc)
ηD
-11
-13
-15
-35.5
2410
-17
-2.96
-2.98
-3
-3.02
PARC (dB)
34
19.2
IRL, INPUT RETURN LOSS (dB)
19.4
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
-3.04
-3.06
f, FREQUENCY (MHz)
Figure 3. Single−Carrier Output Peak−to−Average Ratio Compression
(PARC) Broadband Performance @ Pout = 45 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc)
-10
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1100 mA
Two-Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2350 MHz
-20
IM3-U
-30
IM3-L
IM5-U
-40
IM5-L
IM7-L
-50
IM7-U
-60
10
1
100
200
TWO-TONE SPACING (MHz)
18.8
0
18.6
18.4
18.2
18
17.8
VDD = 28 Vdc, IDQ = 1100 mA, f = 2350 MHz
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
ηD
40
-24
35
-28
ACPR
-1
30
Gps
-2 -1 dB = 25.9 W
-3
25
-3 dB = 45.2 W
-2 dB = 34.9 W
20
PARC
-4
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
-5
15
25
35
45
55
-32
-36
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
19
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two−Tone Spacing
-40
15
-44
10
-48
65
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak−to−Average Ratio
Compression (PARC) versus Output Power
AFT23S170−13SR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
19.5
19
2300 MHz
2350 MHz
2400 MHz
ACPR
2350 MHz
18.5
60
0
50
-10
40
30
2400 MHz
18
ηD
2300 MHz
20
2300 MHz
2350 MHz
17.5
10
-20
-30
-40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1100 mA
Single-Carrier W-CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Gps
Probability on CCDF
ηD, DRAIN EFFICIENCY (%)
20
-50
2400 MHz
17
1
10
100
0
200
-60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single−Carrier W−CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
24
20
30
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1100 mA
20
10
12
0
IRL
8
-10
4
0
1600
IRL (dB)
GAIN (dB)
Gain
16
-20
1800
2000
2200
2400
2600
2800
3000
-30
3200
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFT23S170−13SR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1161 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
(W)
Zin
(W)
Zload (1)
(W)
Gain (dB)
(dBm)
(W)
hD
(%)
AM/PM
(5)
2300
3.46 – j9.07
3.45 + j8.51
2.09 – j4.35
18.2
53.2
210
51.5
–11
2350
5.27 – j10.0
4.90 + j8.90
2.11 – j4.50
18.0
53.3
213
51.8
–11
2400
8.84 – j10.7
7.40 + j10.2
2.06 – j4.47
18.5
53.2
211
52.4
–12
Max Output Power
P3dB
f
(MHz)
Zsource
(W)
Zin
(W)
2300
3.46 – j9.07
3.53 + j8.93
2350
5.27 – j10.0
5.22 + j9.48
2400
8.84 – j10.7
8.20 + j10.7
Gain (dB)
(dBm)
(W)
hD
(%)
AM/PM
(5)
2.09 – j4.54
16.0
54.2
260
54.3
–16
2.15 – j4.69
15.9
54.2
260
54.3
–17
2.18 – j4.77
16.3
54.1
258
54.7
–17
Zload
(W)
(2)
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQ = 1161 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
(W)
Zin
(W)
2300
3.46 – j9.07
3.56 + j8.75
2350
5.27 – j10.0
5.04 + j9.29
2400
8.84 – j10.7
7.80 + j10.4
Gain (dB)
(dBm)
(W)
hD
(%)
AM/PM
(5)
3.81 – j2.63
20.3
51.8
152
60.4
–14
3.29 – j2.43
20.2
51.8
152
61.1
–16
2.95 – j2.60
20.5
51.9
154
61.5
–16
Zload
(W)
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
(W)
Zin
(W)
2300
3.46 – j9.07
3.59 + j9.10
2350
5.27 – j10.0
5.26 + j9.74
2400
8.84 – j10.7
8.48 + j10.9
Gain (dB)
(dBm)
(W)
hD
(%)
AM/PM
(5)
3.67 – j2.84
18.1
52.9
193
62.7
–20
3.29 – j2.76
18.0
52.9
193
63.0
–22
3.06 – j2.82
18.4
52.8
192
63.0
–23
Zload
(W)
(2)
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT23S170−13SR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB − TYPICAL LOAD PULL CONTOURS — 2350 MHz
-1
-1
49
50
49.5
50
50.5
-2
60
-2
E
IMAGINARY (Ω)
IMAGINARY (Ω)
E
51
-3
53
-4
51.5
52.5
56
-4
P
P
-5
-5
52
44
48
46
52
-6
-6
2
1
58
-3
3
4
5
1
7
6
2
54
52
50
3
4
5
6
7
REAL (Ω)
REAL (Ω)
Figure 10. P1dB Load Pull Output Power Contours (dBm)
Figure 11. P1dB Load Pull Efficiency Contours (%)
-1
-1
-24
-22
-20
-18
-16
-14
20.5
-2
E
-3
20
IMAGINARY (Ω)
IMAGINARY (Ω)
-2
19
-4
19.5
P
-5
16.5
1
-4
P
18.5
2
-12
-5
18
17.5
17
-6
-3
E
-6
3
4
5
6
7
1
2
3
4
5
6
REAL (Ω)
REAL (Ω)
Figure 12. P1dB Load Pull Gain Contours (dB)
Figure 13. P1dB Load Pull AM/PM Contours (5)
NOTE:
P
= Maximum Output Power
E
= Maximum Drain Efficiency
7
Power Gain
Drain Efficiency
Linearity
Output Power
AFT23S170−13SR3
8
RF Device Data
Freescale Semiconductor, Inc.
P3dB − TYPICAL LOAD PULL CONTOURS — 2350 MHz
-1
51.5
-2
IMAGINARY (Ω)
-1
51
51
E
52
-3
54
-4
-2
IMAGINARY (Ω)
50
50.5
52.5
53.5
62
60
E
-3
58
-4
P
P
-5
-5
48
46
53
56
50 52 54
-6
-6
2
1
3
4
5
6
2
1
7
3
4
5
6
7
REAL (Ω)
REAL (Ω)
Figure 14. P3dB Load Pull Output Power Contours (dBm)
Figure 15. P3dB Load Pull Efficiency Contours (%)
-1
-1
18.5
-2
18
E
-3
IMAGINARY (Ω)
IMAGINARY (Ω)
-2
17
16.5
-4
17.5
-28
-26
-20
-24
-3
E
-22
-18
-4
-16
P
P
-5
-5
14.5
-6
1
-14
15.5
15
2
16
-6
3
4
5
6
7
1
2
3
4
5
6
REAL (Ω)
REAL (Ω)
Figure 16. P3dB Load Pull Gain Contours (dB)
Figure 17. P3dB Load Pull AM/PM Contours (5)
NOTE:
E
= Maximum Output Power
P
= Maximum Drain Efficiency
7
Power Gain
Drain Efficiency
Linearity
Output Power
AFT23S170−13SR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
AFT23S170−13SR3
10
RF Device Data
Freescale Semiconductor, Inc.
AFT23S170−13SR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
June 2013
Description
• Initial Release of Data Sheet
AFT23S170−13SR3
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2013 Freescale Semiconductor, Inc.
AFT23S170−13SR3
Document
Number:
RF
Device
Data AFT23S170−13S
Rev. 0, 6/2013Semiconductor, Inc.
Freescale
13