Document Number: AFT23S160W02S Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. • Typical Single−Carrier W−CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2300 MHz 17.7 31.0 6.8 −34.6 −18 2350 MHz 17.8 30.5 6.7 −34.5 −25 2400 MHz 17.9 30.3 6.6 −33.9 −14 Features • Designed for Wide Instantaneous Bandwidth Applications • Greater Negative Gate−Source Voltage Range for Improved Class C Operation • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions • Optimized for Doherty Applications • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13−inch Reel. AFT23S160W02SR3 AFT23S160W02GSR3 2300−2400 MHz, 45 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS NI−780S−2L AFT23S160W02SR3 NI−780GS−2L AFT23S160W02GSR3 RFin/VGS 2 1 RFout/VDS (Top View) Figure 1. Pin Connections © Freescale Semiconductor, Inc., 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT23S160W02SR3 AFT23S160W02GSR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain−Source Voltage VDSS −0.5, +65 Vdc Gate−Source Voltage VGS −6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg −65 to +150 °C Case Operating Temperature Range TC −40 to +125 °C Operating Junction Temperature Range (1,2) TJ −40 to +225 °C Symbol Value (2,3) Unit RθJC 0.53 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 45 W CW, 28 Vdc, IDQ = 1100 mA, 2400 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22−A114) 2 Machine Model (per EIA/JESD22−A115) B Charge Device Model (per JESD22−C101) IV Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 5 μAdc Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 219 μAdc) VGS(th) 0.9 1.3 1.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) VGS(Q) 1.4 1.8 2.2 Vdc Drain−Source On−Voltage (VGS = 6 Vdc, ID = 2.19 Adc) VDS(on) 0.1 0.2 0.3 Vdc Off Characteristics On Characteristics Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 W Avg., f = 2400 MHz, Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 17.0 17.9 19.0 dB Drain Efficiency ηD 28.0 30.3 — % PAR 6.1 6.6 — dB ACPR — −33.9 −31.5 dBc IRL — −14 −8 dB Output Peak−to−Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes − AN1955. 4. Part internally matched both on input and output. 5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. (continued) AFT23S160W02SR3 AFT23S160W02GSR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1100 mA, f = 2350 MHz VSWR 10:1 at 32 Vdc, 165 W CW Output Power (3 dB Input Overdrive from 210 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 2300−2400 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 155 — W Φ — −15.5 — ° VBWres — 80 — MHz Gain Flatness in 100 MHz Bandwidth @ Pout = 45 W Avg. GF — 0.14 — dB Gain Variation over Temperature (−30°C to +85°C) ΔG — 0.018 — dB/°C ΔP1dB — 0.01 — dB/°C AM/PM (Maximum value measured at the P3dB compression point across the 2300−2400 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Output Power Variation over Temperature (−30°C to +85°C) AFT23S160W02SR3 AFT23S160W02GSR3 RF Device Data Freescale Semiconductor, Inc. 3 C8 VDD VGG C9 C2 C10 C1 R1 C3 C11* C5* R2 C6 C7 CUT OUT AREA C4* C13 R3 C14 C15 VDD C12 AFT23S160W02S/02GS Rev. 1 D51578 *C4, C5 and C11 are mounted vertically. Figure 2. AFT23S160W02SR3 Test Circuit Component Layout Table 5. AFT23S160W02SR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 2.2 μF Chip Capacitors C3225X7R1H225M200AB TDK C2, C5, C7, C10, C11, C14 4.7 pF Chip Capacitors ATC100B4R7BT500XT ATC C3 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC C4, C13 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC C8, C12 470 μF, 63 V Electrolytic Capacitors B41693A8477Q7 EPCOS C9, C15 10 μF Chip Capacitors C5750X7S2A106M230KB TDK R1, R2 3.3 Ω, 1/4 W Chip Resistors WCR1206-3R3FI Welwyn R3 0 Ω, 2 A Chip Jumper WCR1206-R005JI Welwyn PCB Rogers RO4350B, 0.020″, εr = 3.5 D51578 MTL AFT23S160W02SR3 AFT23S160W02GSR3 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 30 Gps 28 VDD = 28 Vdc, Pout = 45 W (Avg.) IDQ = 1100 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 17.6 17.5 17.4 17.3 26 24 -33 -12 -33.8 -16 -34.6 ACPR -35.4 17.2 IRL 17.1 17 2290 2305 PARC 2320 2335 2350 2365 2380 2395 -20 -24 -36.2 -28 -37 2410 -32 -3.1 -3.2 -3.3 -3.4 PARC (dB) 17.7 IRL, INPUT RETURN LOSS (dB) 17.8 Gps, POWER GAIN (dB) 32 ηD 17.9 ACPR (dBc) 18 -3.5 -3.6 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Single−Carrier Output Peak−to−Average Ratio Compression (PARC) Broadband Performance @ Pout = 45 Watts Avg. -10 VDD = 28 Vdc, Pout = 144 W (PEP) IDQ = 1100 mA, Two-Tone Measurements -20 (f1 + f2)/2 = Center Frequency of 2350 MHz IM3-U -30 IM3-L IM5-U -40 IM5-L IM7-L -50 IM7-U -60 1 100 10 300 TWO-TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two−Tone Spacing 17.5 17 16.5 VDD = 28 Vdc, IDQ = 1100 mA f = 2350 MHz, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0 -1 -1 dB = 27 W -2 -3 -20 20 ηD -3 dB = 43 W -4 25 -25 -30 -35 10 -40 0 -45 PARC -5 15 50 30 ACPR 16 -15 40 Gps -2 dB = 32 W 60 ACPR (dBc) 18 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 18.5 1 ηD, DRAIN EFFICIENCY (%) 19 35 45 55 65 Pout, OUTPUT POWER (WATTS) Figure 5. Output Peak−to−Average Ratio Compression (PARC) versus Output Power AFT23S160W02SR3 AFT23S160W02GSR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) Gps 2400 MHz 17.5 60 0 50 -10 40 VDD = 28 Vdc, IDQ = 1100 mA 17 Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB 16.5 @ 0.01% Probability on CCDF 16 ACPR ηD 20 10 2400 MHz 2350 MHz 2300 MHz 15.5 1 30 10 100 0 200 -20 -30 -40 ACPR (dBc) 2350 MHz 2400 MHz 2300 MHz 18 2300 MHz 2350 MHz ηD, DRAIN EFFICIENCY (%) 18.5 -50 -60 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single−Carrier W−CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 20 25 15 15 10 5 5 -5 IRL 0 -10 1600 -15 VDD = 28 Vdc Pin = 0 dBm IDQ = 1100 mA -5 1800 2000 2200 2400 2600 IRL (dB) GAIN (dB) Gain 2800 3000 -25 -35 3200 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response AFT23S160W02SR3 AFT23S160W02GSR3 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1246 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power P1dB f (MHz) Zsource (W) Zin (W) Zload (1) (W) Gain (dB) (dBm) (W) hD (%) AM/PM (5) 2300 3.05 - j9.21 3.18 + j8.65 2.49 - j5.63 18.0 53.4 220 53.3 -11 2350 4.59 - j10.1 4.32 + j9.21 2.59 - j6.01 17.9 53.3 215 52.1 -11 2400 7.50 - j11.0 6.42 + j10.4 2.63 - j6.16 18.0 53.2 208 51.0 -12 Max Output Power P3dB Gain (dB) (dBm) (W) hD (%) AM/PM (5) 2.46 - j5.99 15.7 54.2 264 53.7 -17 4.52 + j9.79 2.64 - j6.20 15.8 54.1 257 53.2 -17 6.97 + j11.1 2.79 - j6.34 16.0 54.0 252 52.8 -17 f (MHz) Zsource (W) Zin (W) 2300 3.05 - j9.21 3.21 + j9.07 2350 4.59 - j10.1 2400 7.50 - j11.0 Zload (W) (2) (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Figure 8. Load Pull Performance — Maximum Power Tuning VDD = 28 Vdc, IDQ = 1246 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource (W) Zin (W) 2300 3.05 - j9.21 3.12 + j8.82 2350 4.59 - j10.1 4.25 + j9.42 2400 7.50 - j11.0 6.33 + j10.6 Gain (dB) (dBm) (W) hD (%) AM/PM (5) 3.76 - j3.36 20.1 52.0 158 61.8 -17 3.59 - j3.23 20.1 51.6 145 60.7 -18 3.21 - j3.60 20.1 51.8 151 60.2 -17 Zload (W) (1) Max Drain Efficiency P3dB Gain (dB) (dBm) (W) hD (%) AM/PM (5) f (MHz) Zsource (W) Zin (W) Zload (2) (W) 2300 3.05 - j9.21 3.12 + j9.19 3.83 - j3.50 18.0 52.8 189 63.5 -25 2350 4.59 - j10.1 4.42 + j9.93 3.59 - j3.43 18.1 52.5 180 62.5 -26 2400 7.50 - j11.0 6.85 + j11.3 3.33 - j3.72 18.0 52.7 186 62.1 -25 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload AFT23S160W02SR3 AFT23S160W02GSR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB − TYPICAL SIDE LOAD PULL CONTOURS — 2350 MHz -2 50 -2 50.5 58 51 -3 51.5 E -4 IMAGINARY (Ω) IMAGINARY (Ω) -3 52 52.5 -5 53 -6 P E -4 60 -5 58 -6 -7 -7 -8 -8 56 P 44 2.5 2 3 3.5 4 4.5 5 54 52 2.5 2 50 48 46 3 3.5 4 4.5 5 REAL (Ω) REAL (Ω) Figure 10. P1dB Load Pull Output Power Contours (dBm) Figure 11. P1dB Load Pull Efficiency Contours (%) -2 -2 -26 20.5 -3 E 19.5 19 -5 18.5 -6 E -16 -4 IMAGINARY (Ω) IMAGINARY (Ω) 20 -18 -20 -22 -24 -3 P -4 -14 -5 -6 P -12 18 -7 -7 17.5 17 16.5 -8 -8 2 2.5 3 3.5 4 4.5 5 2 2.5 3 3.5 4 4.5 REAL (Ω) REAL (Ω) Figure 12. P1dB Load Pull Gain Contours (dB) Figure 13. P1dB Load Pull AM/PM Contours (5) NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 5 Gain Drain Efficiency Linearity Output Power AFT23S160W02SR3 AFT23S160W02GSR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB − TYPICAL SIDE LOAD PULL CONTOURS — 2350 MHz -2 -2 51 52 -3 54 52.5 -4 IMAGINARY (Ω) IMAGINARY (Ω) E 53 -5 53.5 -6 60 52 51.5 -3 P E -4 62 -5 60 58 -6 P 54 -7 -7 -8 -8 46 2.5 2 3 3.5 4 4.5 5 56 54 2 50 48 2.5 3 52 3.5 4 4.5 5 REAL (Ω) REAL (Ω) Figure 14. P3dB Load Pull Output Power Contours (dBm) Figure 15. P3dB Load Pull Efficiency Contours (%) -2 -2 18.5 -30 -3 E 17.5 -5 17 -6 P -7 -22 -5 -20 -18 -6 P -16 -7 14.5 -24 -4 16.5 16 E -26 18 -4 IMAGINARY (Ω) IMAGINARY (Ω) -28 -3 15.5 15 -8 -8 2 2.5 3 3.5 4 4.5 5 2 2.5 3 3.5 4 4.5 REAL (Ω) REAL (Ω) Figure 16. P3dB Load Pull Gain Contours (dB) Figure 17. P3dB Load Pull AM/PM Contours (5) NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 5 Gain Drain Efficiency Linearity Output Power AFT23S160W02SR3 AFT23S160W02GSR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS AFT23S160W02SR3 AFT23S160W02GSR3 10 RF Device Data Freescale Semiconductor, Inc. AFT23S160W02SR3 AFT23S160W02GSR3 RF Device Data Freescale Semiconductor, Inc. 11 AFT23S160W02SR3 AFT23S160W02GSR3 12 RF Device Data Freescale Semiconductor, Inc. AFT23S160W02SR3 AFT23S160W02GSR3 RF Device Data Freescale Semiconductor, Inc. 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2013 Description • Initial Release of Data Sheet AFT23S160W02SR3 AFT23S160W02GSR3 14 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. 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